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Energy losses in nitride light-emitting diodes

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Publications

Zn vacancy-donor impurity complexes in ZnO

Author(s): Y. K. Frodason, K. M. Johansen, T. S. Bjørheim, B. G. Svensson, A. Alkauskas
Published in: Physical Review B, Issue 97/10, 2018, ISSN 2469-9950
DOI: 10.1103/PhysRevB.97.104109

Iron as a source of efficient Shockley-Read-Hall recombination in GaN

Author(s): Darshana Wickramaratne, Jimmy-Xuan Shen, Cyrus E. Dreyer, Manuel Engel, Martijn Marsman, Georg Kresse, Saulius Marcinkevičius, Audrius Alkauskas, Chris G. Van de Walle
Published in: Applied Physics Letters, Issue 109/16, 2016, Page(s) 162107, ISSN 0003-6951
DOI: 10.1063/1.4964831

Defect identification based on first-principles calculations for deep level transient spectroscopy

Author(s): Darshana Wickramaratne, Cyrus E. Dreyer, Bartomeu Monserrat, Jimmy-Xuan Shen, John L. Lyons, Audrius Alkauskas, Chris G. Van de Walle
Published in: Applied Physics Letters, Issue 113/19, 2018, Page(s) 192106, ISSN 0003-6951
DOI: 10.1063/1.5047808

Calcium as a nonradiative recombination center in InGaN

Author(s): Jimmy-Xuan Shen, Darshana Wickramaratne, Cyrus E. Dreyer, Audrius Alkauskas, Erin Young, James S. Speck, Chris G. Van de Walle
Published in: Applied Physics Express, Issue 10/2, 2017, Page(s) 021001, ISSN 1882-0778
DOI: 10.7567/APEX.10.021001

Negative- U and polaronic behavior of the Zn-O divacancy in ZnO

Author(s): Y. K. Frodason, K. M. Johansen, A. Alkauskas, L. Vines
Published in: Physical Review B, Issue 99/17, 2019, ISSN 2469-9950
DOI: 10.1103/physrevb.99.174106

Zn vacancy as a polaronic hole trap in ZnO

Author(s): Ymir K. Frodason, Klaus M. Johansen, Tor S. Bjørheim, Bengt G. Svensson, and Audrius Alkauskas
Published in: Physical Review B, Issue 95/9, 2017, ISSN 2469-9950
DOI: 10.1103/PhysRevB.95.094105

Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters

Author(s): Cyrus E. Dreyer, Audrius Alkauskas, John L. Lyons, James S. Speck, Chris G. Van de Walle
Published in: Applied Physics Letters, Issue 108/14, 2016, Page(s) 141101, ISSN 0003-6951
DOI: 10.1063/1.4942674

Tutorial: Defects in semiconductors—Combining experiment and theory

Author(s): Audrius Alkauskas, Matthew D. McCluskey, Chris G. Van de Walle
Published in: Journal of Applied Physics, Issue 119/18, 2016, Page(s) 181101, ISSN 0021-8979
DOI: 10.1063/1.4948245

Deep donor state of the copper acceptor as a source of green luminescence in ZnO

Author(s): J. L. Lyons, A. Alkauskas, A. Janotti, C. G. Van de Walle
Published in: Applied Physics Letters, Issue 111/4, 2017, Page(s) 042101, ISSN 0003-6951
DOI: 10.1063/1.4995404

Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors

Author(s): Audrius Alkauskas, Cyrus E. Dreyer, John L. Lyons, Chris G. Van de Walle
Published in: Physical Review B, Issue 93/20, 2016, Page(s) 201304, ISSN 2469-9950
DOI: 10.1103/PhysRevB.93.201304