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Defect Analysis and Thermal Effects of Nanolasers and Emitters

Project description

Getting ready for integrating semiconductor lasers into silicon

Integrated photonics, the use of light for applications traditionally addressed through electronics, is becoming the new contender in a wide range of areas including telecommunications. However, photonics technology has failed to match the miniaturisation of electronic components. Furthermore, thermal management of photonic devices at such small scales is critical to prevent premature failure. The EU-funded DATENE project is addressing another integration challenge: overcoming defects of III-V compound materials, which stem from the crystal lattice mismatch with silicon. Researchers will conduct defect analysis and thermal management studies into III-V lasers monolithically integrated on silicon. Project results will create a new basis for understanding data transmission on computer chips via light.

Objective

Photonic integrated circuits (PIC) are becoming a key contender for the next generation of communication. Two main barriers exist for the seamless integration of electronics and photonics, the integration of active photonic components on the silicon chip, and their downsizing towards electronic dimensions.
III-Vs with their tunable direct bandgaps are the materials of choice for integrated lasers on Si. IBM has achieved room-temperature III-V optically pumped microdisk lasers monolithically on Si. Defects in the III-V material when grown on Si is a main factor in reducing the efficiency of optical devices, and can also lead to catastrophic failure of devices. Hence the ability to analyze and preferably control their impact is essential for integrated photonics.
Another equally grand challenge for advanced technologies today is thermal management of photonic devices on Si, at all levels of system integration from the package down to individual devices. Whereas this is true for electronics, thermal effects are even more severe for photonic devices. Although downscaling of photonic components is ultimately limited by diffraction, thermal effects (wavelength shift and self-heating), in practice play a great role.
The present proposal addresses these two great challenges in integrated photonics: a) Defect analysis of III/V nanoscale photonic devices – morphological and device characterization to understand the impact of material defects on device, reliability studies. b) Nanoscale thermal management of active III-V lasers on Si – by a combination of in-situ nanoscale thermal characterization and thermal stress simulation.
To address this, I will apply my extensive experience and skills in thermal characterization and defect analysis which complement the existing competences at IBM, on III-V materials, device fabrication and scanning thermal microscopy.

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MSCA-IF-EF-SE - Society and Enterprise panel

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(opens in new window) H2020-MSCA-IF-2018

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Coordinator

IBM RESEARCH GMBH
Net EU contribution

Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.

€ 203 149,44
Address
SAEUMERSTRASSE 4
8803 RUESCHLIKON
Switzerland

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Region
Schweiz/Suisse/Svizzera Nordwestschweiz Aargau
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
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Total cost

The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.

€ 203 149,44
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