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Carbon nanotubes technology on Si IC's

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Enhancing knowledge for advancing nanotechnology

An EU-funded project took an interdisciplinary approach to discovering more about the potential of integrated carbon nanotube technology. Findings highlight the route to post-complementary metal oxide semiconductor nanoelectronics.

Industrial Technologies icon Industrial Technologies

Nanotechnologies based on the promising features of carbon nanotubes (CNTs) are quickly gaining favour in the microelectronics industry. However, there are still a few challenges to meet: topping that list is enhanced understanding of CNT growth mechanisms. Also, more information is needed on the synthesis process for controlling the production of nanotubes with specific dimensions. The 'Carbon nanotubes technology on Si IC's' (Carbonchip) project produced a materials-based roadmap aimed at elaborating the integration of CNT technology with silicon (Si) technology. Activities enabling this outcome focused on research and development in catalysis, CNT growth and related on-chip technology, and work on analysis methodology for integrating CNTs into Si structures. The consortium also placed major emphasis on application compatibility and the feasibility of manufacturing on an industrial scale. Carbonchip partners developed a particular catalyst technology that enabled the study of various CNT growth processes that facilitate the manufacture of dense forests of single-walled carbon nanotubes (SWCNTs) with a specific diameter. Successes in this area were combined with advances in grafting SWCNTs onto different substrates for the development of a successful approach to SWCNT growth. This in turn offered insight into the compatibility of CNTs with Si technology through device characterisation and electrical testing. Bringing together knowledge of materials science and nanomanufacturing is key to opening the way to CNT-based nanoelectronics. As such, Carbonchip outcomes stand to have a major impact on the development of nanoelectronic strategies aimed at realising nanotransistor integrated circuit (IC) devices.

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