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Verwertbare Ergebnisse
Chips or module incorporating Quantum Dash based DFB, FP, DBR lasers and SOA.
1.55 µm high gain epitaxial wafers based on novel low-dimensional quantum dot (QD) active material offer potentially several advantages over wafers based on conventional quantum well active material.
This includes innovation potential owing to the ability to engineer QD active material properties for telecommunication applications, including properties like low sensitivity to optical feedback, designed chirp properties including low frequency chirp or semi-cooled operation capability.
Optimization of growth conditions and designs allowed demonstrating high gain active layers which are compatible with directly modulated laser fabrication for 10 GBit/s data transmission at 1.55 µm.
In addition, QD material engineering has been established which allows to provide QD material which could be tailored in a wide range to customer specifications.
Directly modulated lasers in coupled-cavity design based on quantum dot (QD) active material were developed. The special multi section design of these devices allows an interaction between the lasing mode and a second mode used as catalyst to enable a high resonance frequency of the devices.
By this approach, it was possible to enhance the modulation bandwidth well beyond the inherent bandwidth of the underlying QD active material.
We observed record high cut off frequencies of up to 20GHz in the small signal response of devices based on 1.3µm QD material, which shows the potential for high bit rate applications.
The developed semiconductor laser technology based on quantum dot (QD) active material has -besides telecom applications- also great potential in the field of gas sensing, environmental monitoring and pollution control.
Nanoplus can provide various QD DFB laser sources in a very wide spectral range for these applications.
Widely tunable lasers based on quantum dot (QD) material with spectrally broad gain bandwidth were developed. For 2.5Gbit/s CWDM applications the fabricated GaAs based devices use a simple and cost-effective tuning mechanism capable of addressing discrete channels in a wide wavelength range of around ~80 nanometers.
InP-based Quantum Dash epiwafers up to 4" wafers for large scale production. Such epiwafers could be used for DFB lasers, tuneable lasers, SOA and Mode locked lases.
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