Objetivo Technology-computer-aided design (TCAD) is an indispensable tool for development and optimization of new generations of electronic devices in industrial environments. It was estimated in the International Technology Roadmap for Semiconductors that TCAD reduces technology development costs by 35% with a tendency to rise. However, to continue to be that useful for the 32 nm technology node and beyond, the capabilities of TCAD have to follow the paradigm shifts to processes and materials considered for such nanodevices.The objective of this project is to extend the capabilities of TCAD to the materials and doping processes used at the 32 nm node and beyond. In particular, quantitative models for the deactivation and activation mechanisms for dopants in silicon will be developed which are suited for the low ion implantation energies and low-temperature or millisecond-annealing strategies of future nanodevices. These models will be able to predict the effects of point-defect engineering and, for boron, the influence of fluorine. For strained and unstrained silicon-germanium alloys, strained silicon, and silicon-on-insulator materials, models will be developed for the evolution of extended defects and for the activation, segregation, and diffusion of dopants. Special test structures will also be used to investigate a possible diffusion anisotropy in isolated semiconductor layers. The models developed will be implemented and integrated into FLOOPS-ISE to be of immediate value to the semiconductor industry and validated with respect to their needs.To reach these ambitious goals, the consortium consists of companies active in complementary fields of competence (STM-France: device manufacturing, Mattson: equipment production, Synopsys: TCAD software, CSMA: characterization) in addition to three leading European research institutes (Fraunhofer-IISB, Univ. Surrey, CNRS-LAAS/CEMES) with extensive experience in modeling and simulation. Ámbito científico natural sciencescomputer and information sciencessoftwarenatural sciencesphysical scienceselectromagnetism and electronicssemiconductivitynatural scienceschemical sciencesinorganic chemistryhalogensnatural scienceschemical sciencesinorganic chemistrymetalloids Programa(s) FP6-IST - Information Society Technologies: thematic priority under the specific programme "Integrating and strengthening the European research area" (2002-2006). Tema(s) IST-2004-2.4.1 - Nanoelectronics Convocatoria de propuestas Data not available Régimen de financiación STREP - Specific Targeted Research Project Coordinador FRAUNHOFER IAF Aportación de la UE Sin datos Dirección Tullastr. 72 79108 MÜNCHEN Alemania Ver en el mapa Enlaces Sitio web Opens in new window Coste total Sin datos Participantes (6) Ordenar alfabéticamente Ordenar por aportación de la UE Ampliar todo Contraer todo CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE Francia Aportación de la UE Sin datos Dirección 3, RUE MICHEL-ANGE PARIS CEDEX 16 Ver en el mapa Coste total Sin datos CSMA LIMITED Reino Unido Aportación de la UE Sin datos Dirección QUEENS ROAD, PENKHULL ST4 7LQ STOKE ON TRENT Ver en el mapa Coste total Sin datos MATTSON THERMAL PRODUCTS GMBH Alemania Aportación de la UE Sin datos Dirección DAIMLER STRASSE 10 89260 DORNSTADT Ver en el mapa Coste total Sin datos STMICROELECTRONICS SA Francia Aportación de la UE Sin datos Dirección 29 BOULEVARD ROMAIN ROLLAND 92120 MONTROUGE Ver en el mapa Coste total Sin datos SYNOPSYS SWITZERLAND LLC Suiza Aportación de la UE Sin datos Dirección AFFOLTERNSTRASSE 52 8050 ZUERICH Ver en el mapa Coste total Sin datos THE UNIVERSITY OF NEWCASTLE UPON TYNE Reino Unido Aportación de la UE Sin datos Dirección 6 KENSINGTON TERRACE NE1 7RU NEWCASTLE UPON TYNE Ver en el mapa Coste total Sin datos