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Opt-electronic integration for 100 Gigabit Ethernet Optical Networks

Projektbeschreibung


Photonic components

This project addresses the challenges of very high bit rate opto-electronics transceivers suitable for 100 Giga Ethernet type applications. Observation of the steady improvement in Silicon CMOS performances, as well as the increase in data traffic projections, are incentives for this evolution, expected to become an industrial reality in the first part of the next decade.In this project, the focus is on the demonstration of the highest speed components that integrate the optoelectronic transducers (light modulator and photodiode) with their driving electronics (driver and preamplifier respectively). Really new optoelectronics components will be developed based on designs experienced for lower bit rates (40 and 80 Gbit/s) and their characteristics will be optimised in order to match specifications that will be derived from systems considerations. As important as the optoelectronic devices characteristics themselves is the Opto-Electronic Integrated Circuit technology that will be used for the transceivers. Two parallel routes will be followed in this project for the transmitter and receiver : while the monolithic integration is chosen for the later, with its associated advantages of lower added parasitics and shorter interconnections than conventional approaches, a flip-chip integration is to be used for the former, to benefit from optimised technologies for both the Electro-absorption Modulated Laser and the electronic driver and to better accommodate thermal issues. Guidelines for this production of integrated devices as well as for the components packaging will be given by a supporting Electro-Magnetic simulation activity. This project will be completed by an assessment of the fabricated components with respect to the projected application.

Aufforderung zur Vorschlagseinreichung

FP6-2005-IST-5
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Koordinator

ALCATEL THALES III V LAB
EU-Beitrag
€ 668 052,00
Gesamtkosten
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Beteiligte (2)