Gallium nitride (GaN) based vertical cavity surface-emitting lasers (VCSELs) have attracted a wide range of interests and research efforts both from the academy and industry due to their important potential as short wavelength laser source. In this context, significant progress has been made in the past decades. However, compared with the remarkable achievements in GaN based material growth, device design and fabrication, the study on the beam shaping of GaN VCSELs falls behind, which results in the poor beam quality and unstable polarization property. To solve this problem, the overall objectives of the MetaVCSEL project include the design and fabrication of optical metasurfaces that are suitable for blue and UV applications, the development of an on-chip approach to manipulate the beam profiles of the GaN VCSELs through the integration of metasurface. The results of the MetaVCSEL have demonstrated the promising capabilities of GaN based metasurfaces and diamond based metasurfaces to control the phase and polarization states of light in blue and UV regions, respectively, which can be used for integration with GaN based VCSELs.