Memristor-Enabled NEuromorphic System for Intelligence in Space

Project Information

MENESIS

Grant agreement ID: 101029535

DOI

10.3030/101029535

Project closed

EC signature date 26 March 2021

Start date 1 September 2021

End date 31 August 2023

Funded under

• EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions

Total cost

€ 212 933,76

EU contribution

€ 212 933,76

Coordinated by

UNIVERSITY OF SOUTHAMPTON
United Kingdom

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Links to deliverables and publications from FP7 projects, as well as links to some specific result types such as dataset and software, are dynamically retrieved from OpenAIRE .

Publications

Other (4)

γ-ray -induced Effects in Al:HfO2-based Memristor Devices for Memory and Sensor Applications

Author(s): Om Kumar Prasad,Sridhar Chandrasekaran,Mari Napari,Irwan Purnama,Asep Nugroho,Dimitra Georgiadou,Kow-Ming Chang,Firman Simanjuntak
Published in: 2024
Publisher: TechRxiv
DOI: 10.36227/techrxiv.171259972.26504822/v1

Exploring the switching nonuniformity of CBRAM for random number generators

Author(s): Weixin Xu,Asep Nugroho,Irwan Purnama,Zohreh Hajiabadi,Aiden Graham,Alexander-Hanyu Wang,Sridhar Chandrasekaran,Firman Simanjuntak
Published in: 2024
Publisher: Techrxiv
DOI: 10.36227/techrxiv.171259808.83723889/v1

Feasibility study of analogue filters based on memristor

Author(s): Shan Gao,Sridhar Chandrasekaran,Irwan Purnama,Firman Simanjuntak
Published in: 2024
Publisher: TechRxiv
DOI: 10.36227/techrxiv.171259787.75310222/v1

Invisible ZnO-based Memristor Universal Logic for Reconfigurable Electronics

Author(s): Chen Hua,Sridhar Chandrasekaran,Shan Gao,Dimitra G Georgiadou,Zohreh Hajiabadi,Firman Simanjuntak
Published in: 2024
Publisher: TechRxiv
DOI: 10.36227/techrxiv.171259797.74935979/v1

Peer reviewed articles (4)

Forming‑Free and Non‑linear Resistive Switching in Bilayer HfOx/TaOx Memory Devices by Interface‑Induced Internal Resistance

Author(s): Mari Napari, Spyros Stathopoulos, Themis Prodromakis & Firman Simanjuntak
Published in: Electronic Materials Letters, 2024, ISSN 2093-6788
Publisher: Springer
DOI: 10.1007/s13391-023-00481-w

Annealing induced cation diffusion in TaO x -based memristor and its compatibility for back-end-of-line post-processing

Author(s): Prasad, Om Kumar Chandrasekaran, Sridhar Chung, Chin-han Chang, Kow-ming Simanjuntak, Firman Mangasa
Published in: Applied Physics Letters, 2022, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/5.0123583

Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices

Author(s): Simanjuntak, Firman Mangasa Panidi, Julianna Talbi, Fayzah Kerrigan, Adam Lazarov, Vlado K. Prodromakis, Themistoklis
Published in: APL Materials, 2022, ISSN 2166-532X
Publisher: AIP
DOI: 10.1063/5.0076903

Conduction channel configuration controlled digital and analog response in TiO 2 -based inorganic memristive artificial synapses

Author(s): Simanjuntak, Firman Mangasa Hsu, Chun-Ling Abbey, Thomas Chang, Lung-Yu Rajasekaran, Sailesh Prodromakis, Themis Tseng, Tseung-Yuen
Published in: APL MAterials, 2021, ISSN 2166-532X
Publisher: AIP
DOI: 10.1063/5.0067302

Conference proceedings (1)

Electrode engineering in memristors development for non-/erasable storage, random number generator, and synaptic applications

Author(s): Simanjuntak, Firman Mangasa, Talbi, Fayzah, Kerrigan, Adam, Lazarov, Vlado K. and Prodromakis, Themistoklis
Published in: IEEExplore, 2022
Publisher: IEEE
DOI: 10.1109/ies55876.2022.9888713