Periodic Reporting for period 1 - SingExTr (Single Exciton Transistor based on van der Waals Heterostructures)
Periodo di rendicontazione: 2021-03-01 al 2023-02-28
We aimed to realize Coulomb blockade with IXs, which possess strong and tunable dipolar interaction. In this proposal we aimed to develop a proof-of-concept optoelectronic device of a 2D heterostructure to electrostatically trap IX at single particle level and perform the quantum optical characterization on the gate defined trapping site. Moreover, we intended to harness the dipolar nature, i.e. spatial wavefunction overlap of the excitons, by tunning the electrostatic potential landscape. Such signatures would be characterized by magneto-optical spectroscopy and auto- and cross-correlation measurement with a Hanbury Brown and Twiss interferometer.
In these regards, we fabricated exciton transistor device prototypes based on bilayer WSe2 and MoSe2. We realized the Stark shift of interlayer exciton for both materials, which is essential for electrical control of excitonic device. Although we did not realize pinching down the exciton current due to the experimental challenges. By applying electric field we successfully tailored the interlayer exciton transitions and surprisingly we revealed rich exciton complexes and intra-interlayer exciton hybridization. With a Hanbury Brown and Twiss interferometer we conducted photon correlation measurement to study the dynamic evolution of the spin triplet as a function of exciton density and interpret the evolution as a result of dipolar interaction which is in contrast to bare Augur recombination, which is the case for intralayer excitons.
The results are of great significance to disparate scientific communities: condensed-matter, quantum optics, 2D materials, integrated electronic and photonic chips, etc. The knowledge of how to generate interlayer exciton and control their spatial wave functions and magnetic properties opens new technological possibilities which quantum engineers can take advantage of in future technologies. We also will widely disseminated our results and discoveries in high impact peer reviewed journals and top international conferences (APS March Meeting and Gordon Research Conference).
In these regards, we fabricated exciton transistor device prototypes based on bilayer WSe2 and MoSe2. We realized the Stark shift of interlayer exciton for both materials, which is essential for electrical control of excitonic device. Although we did not realize pinching down the exciton current due to the experimental challenges. By applying electric field we successfully tailored the interlayer exciton transitions and surprisingly we revealed rich exciton complexes and intra-interlayer exciton hybridization. With a Hanbury Brown and Twiss interferometer we conducted photon correlation measurement to study the dynamic evolution of the spin triplet as a function of exciton density and interpret the evolution as a result of dipolar interaction which is in contrast to bare Augur recombination, which is the case for intralayer excitons.
The results are of great significance to disparate scientific communities: condensed-matter, quantum optics, 2D materials, integrated electronic and photonic chips, etc. The knowledge of how to generate interlayer exciton and control their spatial wave functions and magnetic properties opens new technological possibilities which quantum engineers can take advantage of in future technologies. We also will widely disseminated our results and discoveries in high impact peer reviewed journals and top international conferences (APS March Meeting and Gordon Research Conference).
We fabricated exciton transistor device prototypes based on bilayer WSe2 and MoSe2. And we realized the Stark shift of interlayer exciton for both materials, which is essential for electrical control of excitonic device. We did not realize pinching down the exciton current due to the challenge of controlling electrostatic precisely. But we did try to use electric field to tailor the interlayer exciton transitions and surprisingly we revealed rich exciton complexes and intra-interlayer exciton hybridization. We conduct magneto-optical measurement to study the hybrid ground and excited state interlayer exciton in 2H-MoSe2 (ref: arXiv:2212.14338) and these results lead to large impact in optoelectronics and collective behaviour of bosonic particles. Al-together, the results promote a new TMD homostructure candidate for applications with enhanced exciton- exciton interactions with strong light-matter coupling. Beyond 3L 2H-MoSe2, a strategy of further engineering IX dipoles by tuning the layer number, including thicker multilayer (> 3L) 2H-TMDs or heterostructures with multilayer TMD components and hBN spacers, is encouraged.
We also performed quantum optical characterization of the interlayer exciton trapped in moiré potential. We study the dynamic evolution of the spin triplet as a function of exciton density and interpret the evolution as a result of dipolar interaction, in contrast to bare Auger recombination, which is the case for intralayer exciton.
We also performed quantum optical characterization of the interlayer exciton trapped in moiré potential. We study the dynamic evolution of the spin triplet as a function of exciton density and interpret the evolution as a result of dipolar interaction, in contrast to bare Auger recombination, which is the case for intralayer exciton.
The hybrid interlayer exciton results lead to large impact in optoelectronics and collective behaviour of bosonic particles. The interlayer exciton dynamics result is of great importance for creating energy efficient optoelectronic device with atomic thickness.