Space Application GaN transistor

Projektinformationen

SAGAN

ID Finanzhilfevereinbarung: 101082387

DOI

10.3030/101082387

EK-Unterschriftsdatum 17 Oktober 2022

Startdatum 1 Januar 2023

Enddatum 31 Dezember 2026

Finanziert unter

• Digital, Industry and Space

Gesamtkosten

€ 2 398 623,75

EU-Beitrag

€ 2 398 623,75

Koordiniert durch

SENER TAFS SA
Spain

Periodic Reporting for period 1 - SAGAN (Space Application GaN transistor)

Berichtszeitraum: 2023-01-01 bis 2024-06-30

Zusammenfassung vom Kontext und den Gesamtzielen des Projekts

The SAGAN Project focuses on a critical component for future satellite platforms and payloads: GaN power transistors. These are essential for Spacecraft Electrical Power Systems (EPS), which enable many capabilities we rely on today, such as high-speed communications, GNSS, and scientific payloads. Additionally, satellites have other power systems like motor drivers, RF power amplifier bias networks, instrument supplies, and DC/DC converters, all needing innovation to reduce power consumption and stay competitive globally.

Power transistors are vital for the efficiency of EPS and other systems, allowing the most effective electrical power processing. Recent advancements have led to Gallium Nitride (GaN) transistors, which reduce equipment mass and power consumption.

However, not all transistors can withstand the harsh conditions of space, such as extreme temperatures, vacuum pressure, and radiation. Standard transistors would fail under these conditions, risking mission failure. Therefore, specialized transistors must be designed, manufactured, and qualified for space use.

The SAGAN consortium aims to significantly impact future space missions’ electrical power architectures, enhancing the European Space sector’s competitiveness by leading in GaN technology. GaN transistors will enable more efficient equipment, supporting advanced space missions that provide better science, communications, GNSS services, and security for Europe.

SAGAN offers two main benefits:

* Europe’s Competitiveness: Currently, Europe relies on external parties for GaN technology, which weakens its position. Developing this technology within Europe is crucial for a prosperous future in the space industry.
* Electrical Performance: GaN transistors offer superior characteristics compared to current silicon technology, reducing mass and heat generation. This makes equipment more competitive, essential for future large SATCOM platforms and payloads requiring high power without increasing satellite mass.

SAGAN does two complete rounds of transistor design, manufacturing, and testing to ensure that, by the end of the project, a set of transistors for space applications are available for the next phase of formally qualifying the product.

Arbeit, die ab Beginn des Projekts bis zum Ende des durch den Bericht erfassten Berichtszeitraums geleistet wurde, und die wichtigsten bis dahin erzielten Ergebnisse

SAGAN kicked off in January 2023. It includes two GaN transistor design cycles and a preliminary testing cycle to evaluate the technology’s initial state.

In 2024, the project team prepared the requirement specifications for a family of transistors, incorporating input from the SAGAN consortium and space electronics experts. This family of transistors aims to support various space missions, whether scientific, institutional, or commercial.

Simultaneously, the preliminary testing cycle was conducted. This involved manufacturing a wafer of standard GaN transistors, which were then diced and assembled into test jigs. These jigs, along with external test benches, were designed by the consortium to measure transistor performance. Experiments to test the technology’s radiation hardness were performed at a European facility. The results indicated that while the technology is suitable for space applications, it requires further refinement, as expected.

Using these radiation test results and consortium collaboration, the first learning cycle is underway. This cycle includes transistor design, wafer floor planning, wafer manufacturing, dicing, and similar experiments to those previously conducted. As of Q4 2024, the consortium is testing the transistors from the first learning cycle and evaluating their radiation robustness.

Fortschritte, die über den aktuellen Stand der Technik hinausgehen und voraussichtliche potenzielle Auswirkungen (einschließlich der bis dato erzielten sozioökonomischen Auswirkungen und weiter gefassten gesellschaftlichen Auswirkungen des Projekts)

By the end of the project, SAGAN will have developed a set of Gallium Nitride (GaN) transistors, demonstrating their suitability for space applications. These transistors will have undergone rigorous environmental, radiation, and electrical testing to ensure they meet the project’s specifications and goals.

Results and Potential Impacts:

Proven Adequacy: The GaN transistors have shown promising results, confirming their potential for use in space missions.
Enhanced Performance: These transistors offer reduced losses, which is critical for the next generation of spacecraft Electrical Power Systems.

Key Needs for Further Success:

*Further Research and Testing: While the current project has conducted extensive testing, additional tests are necessary to gather more comprehensive data. This includes long-term reliability studies and performance assessments under varied space conditions.
*Demonstration and Validation: Demonstration missions are needed to validate the transistors’ performance in actual space environments. This will help build confidence among stakeholders and potential users.
*Access to Markets and Finance: Securing funding and market access is crucial for the commercialisation of GaN transistors. This involves engaging with space agencies, satellite manufacturers, and other industry players.

Environmental Testing: GaN transistors will have been subjected to extreme test environment to simulate space environments.
Radiation Testing: The transistors have been tested for radiation hardness to ensure they can withstand the environment that space missions have to deal with.
Electrical Testing: Comprehensive electrical tests have been conducted to verify the transistors’ performance and reliability.
SAGAN will lay a strong foundation for the future of GaN technology in space applications. Continued efforts in research, testing, and regulatory development will be crucial to fully realise the potential of these advanced transistors.

SAGAN improvement chain