Project description
Looking to the future of power semiconductor technology
The spread of power electronics and power semiconductors is paving the way for the digitalisation and the electrification of our society. Also, its supply with sustainable energy is giving rise to new requirements for the conception and integration of semiconductor and interconnect materials. In this context, the EU-funded AddMorePower project will provide the necessary characterisation and modelling techniques that meet the needs of upcoming power semiconductor technology generations. Overall, it will advance X-ray- and electron probe-related characterisation techniques to make them quantitative and automated tools for the power semiconductor industry and to refine modelling (using MODA ) and FAIR data-management methods. This way, it will promote the materials’ integration and development for European power semiconductor technologies.
Objective
The proposed project AddMorePower aims to advance X-ray- and electron-probe related characterization techniques to make them quantitative and automated tools for the power semiconductor industry, and to refine modelling (using MODA) and FAIR data-management methods to enhance and efficiently use characterization data (using CHADA). Thereby, AddMorePower will promote the materials integration and development for European power semiconductor technologies, to allow a broader and faster market penetration, while also providing new opportunities for other industries basing themselves on mono- and polycrystalline materials. With the rapid and massive spread of power electronics and power semiconductors to enable the digitalization and the electrification of our society and its supply with sustainable energy, new requirements arise to the conception and integration of semiconductor and interconnect materials. AddMorePower will provide the necessary characterization and modelling techniques that meet the particular needs of the upcoming power semiconductor technology generations:
1. The transition to the new semiconductor materials gallium nitride (GaN) and silicon carbide (SiC), mainly limited by defects in the crystal lattice, for which currently no established characterization workflows exist.
2. The starting 3D-integration also of power devices, posing severe thermo-mechanical challenges to the involved metals and intermetallic materials, which can only be mastered by understanding gained by predictive modelling.
3. The trend towards digitalization and industry4.0 which requires FAIR (findable, accessible, interoperable and reusable) data at all development and production steps.
The project brings together renowned research institutes with many years of experience in electron- and X-ray characterization, emerging new research groups and company start-ups and researchers with a track record in multi-physics materials modelling as well as data engineering.
Fields of science
- engineering and technologyenvironmental engineeringenergy and fuelsrenewable energy
- natural sciencesphysical sciencesatomic physics
- natural scienceschemical sciencesinorganic chemistrypost-transition metals
- natural sciencesphysical scienceselectromagnetism and electronicssemiconductivity
- natural sciencescomputer and information sciencescomputational sciencemultiphysics
Keywords
Programme(s)
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Funding Scheme
HORIZON-RIA - HORIZON Research and Innovation ActionsCoordinator
80686 Munchen
Germany