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Leistungen
Website and project logo information with also social media links. A private file-sharing space will be created for internal communication and document exchange.
Devices comprising a magnetic nanowire (100nm - 1μm width) and/or a reservoir for domain nucleation, a local MI gate and an electrical detection point (Hall cross, AF-magnetoresistance) will be designed and fabricated with AF materials [UPSaclay,CEITEC, CNR]. Two designs based on domain nucleation and depinning/propagation, respectively, will be fabricated. Artificial nucleation points will be introduced by local He+ ion irradiation [Spin-Ion].
Fair recruitment report (öffnet in neuem Fenster)Description of the fair recruitment strategy used to to avoid ethnicity/gender bias.
Plan for Dissemination and Exploitation Including Communication Activities (öffnet in neuem Fenster)Dissemination within the scientific community will be done by high impact open access journal publications and presentations at international conferences. A special project workshop on new spintronics technologies for neuromorphic computing will be organised at M36 within the Capocaccia workshop, one of the two main neuromorphic workshops in the world, organized by the consortium member UZH. The project website and social network accounts will be a platform for dissemination to the scientific community and the general public. A special focus will be given to the visibility of our female participants. The consortium agreement will define the rules for protection and exploitation of our IP. The filing of patents and the creation of a start-up company will be strongly encouraged [UPSaclay, all]. An exploitation plan beyond the lifetime of the project will be drawn by the Technology Board [HawAI.tech].
MI control of SOT efficiency in FM devices (öffnet in neuem Fenster)Ion intercalation at a FM/heavy metal interface will be used to regulate SOT efficiency. Ionic modulation of the DMI will be evaluated and used to modify the DW structure (Néel/Bloch) and their motion induced by spin currents. The degree of oxidation at the FM/oxide interface will be identified and used to modulate PMA and, in turn, DW pinning strength and velocity [CNR, UPSaclay]. These strategies will be also used to control current-driven domain nucleation in monodomain structures assisted by ion irradiation and a magnetic field [Spin-Ion].
FM nanodevices with local ionic gates fabricated (öffnet in neuem Fenster)Devices comprising a magnetic nanowire (100nm - 1μm width) and/or a reservoir for domain nucleation, a local MI gate and an electrical detection point (Hall cross, AF-magnetoresistance) will be designed and fabricated with FM materials [UPSaclay,CEITEC, CNR]. Two designs based on domain nucleation and depinning/propagation, respectively, will be fabricated. Artificial nucleation points will be introduced by local He+ ion irradiation [Spin-Ion].
AF/oxide1/oxide2 multilayers grown (öffnet in neuem Fenster)AF materials such as FeRh, PtMn, and NiO will be sputter-grown on MgO and other substrates [CEITEC]. SAFs and metamagnetic multilayer systems such as (Pd/Co)n/Ru/(Pd/Co)n will also be produced [CEITEC, Singulus]. These materials will be in-situ covered with oxide 1, with high ion mobility and grown by sputtering or ALD such as HfO2 and GdOx [Singulus, CNR, CEITEC]. Oxide 2, with high dielectric constant and insulating properties will be grown ex-situ by ALD on oxide 1. Oxide 2 materials: HfO2, HfO2: Al, TiO2 and Al2O3 [CNR, UPSaclay].
FM/oxide1/oxide2 multilayers grown (öffnet in neuem Fenster)FM ultra-thin films (0.4 to 1nm thick) such as archetypical CoFeB and Co will be grown by magnetron sputtering on a variety of buffer layers with high spin-orbit coupling like Ta, Pt and W [Singulus]. Thicker elemental ferromagnetic layers (Fe, Co) (1-few nm thick) will be e-beam evaporated in direct contact with oxides (from T1.2) [CNR]. These materials will be in-situ covered with oxide 1, with high ion mobility and grown by sputtering or ALD such as HfO2 and GdOx [Singulus, CNR, CEITEC]. Oxide 2, with high dielectric constant and insulating properties will be grown ex-situ by ALD on oxide 1. Oxide 2 materials: HfO2, HfO2: Al, TiO2 and Al2O3 [CNR, UPSaclay].
MI stacks with enhanced ionic mobility (öffnet in neuem Fenster)Strategies to enhance ion mobility and to better adapt to the needs of WP2, 3 and 4 [UZH, FZJ] will be tested in stacks containing only oxide 1. These include interface intermixing by light ion irradiation (He+), the creation of artificial ion channels by ion bombardment (He+, Ga+, Xe+) and the implantation of ions at different energies (H+, O, N) selectively into the oxide, magnetic and HM layers [Spin-Ion]. In this case oxide 2 will be deposited after this process is completed [CNR, UPSaclay]. The role of grain boundaries as ionic channels will be addressed as a function of the crystallite size which will be controlled through the crystallisation conditions (temperature, O2 pressure, irradiation, etc.) [Singulus, Spin-Ion].
Metaplastic synaptic behaviour operational in FM devices (öffnet in neuem Fenster)The dependence of the switching probability on the MI state of the gate will be evaluated for each of the proposed schemes [UPSaclay, CEITEC]. The device design will be adapted based on the most performing dependences used in metaplastic algorithms and based on biological neural models [UPSaclay, FZJ, UZH, HawAI.tech]. We will explore wire width variations to induce DW velocity gradients and the patterning of DW traps and lateral anisotropy gradients introduced by ion irradiation below the gate [UPSaclay, CEITEC, Spin-Ion].
Consortium agreement (öffnet in neuem Fenster)A consortium agreement will be established, based on successful models in our previous projects, that will deal with joint discoveries between consortium partners at different institutions. The agreement will define the rules for protection and exploitation of our IP.
2nd revision of th DMP.
RP1 update of the Data Management Plan (öffnet in neuem Fenster)1st revision of the DMP.
Data management plan (öffnet in neuem Fenster)A data management plan will be prepared taking into account the type of data produced by each partner.
Veröffentlichungen
Autoren:
Bonnet, Djohan; Hirtzlin, Tifenn; Januel, Tarcisius; Dalgaty, Thomas; Querlioz, Damien; Vianello, Elisa
Veröffentlicht in:
NeurIPS, MLNCP workshop, 2023, 2023
Herausgeber:
Open Review
Autoren:
S. D’Agostino; F. Moro; T. Hirtzlin; J. Arcamone; N. Castellani; D. Querlioz; M. Payvand; E. Vianello
Veröffentlicht in:
2023 IEEE 5th International Conference on Artificial Intelligence Circuits and Systems (AICAS), 2023, ISSN 2473-2001
Herausgeber:
IEEE
DOI:
10.48550/arxiv.2306.12142
Autoren:
T. Bhatnagar-Schoeffmann, P. Schoeffmann, A. Resta, A. Lamperti, G. Bernard, A. Kovacs, L. Largeau, A. Durnez, A. Harouri, X. Laffosse, D. Ourdani, M.-A. Syskaki, Y. Roussigné, S. Ono, R. E. Dunin-Borkowski, J. Langer, D. Ravelosona, M. Belmeguenai, A. So
Veröffentlicht in:
Advanced Material Interfaces, 2024, ISSN 2196-7350
Herausgeber:
Wiley - VCH
DOI:
10.1002/admi.202300955
Autoren:
Ondřej Wojewoda, Jakub Holobrádek, Dominik Pavelka, Ekaterina Pribytova, Jakub Krčma, Jan Klíma, Jaganandha Panda, Jan Michalička, Tomáš Lednický, Andrii V. Chumak, Michal Urbánek
Veröffentlicht in:
Applied Physics Letters, Ausgabe 125, 2024, ISSN 0003-6951
Herausgeber:
AIP Publishing
DOI:
10.1063/5.0218478
Autoren:
Isabelle Aguilar, Thomas Bersani--Veroni, Luis Fernando Herbozo Contreras, Thomas Love, Armin Nikpour, Damien Querlioz, Omid Kavehei
Veröffentlicht in:
npj Unconventional Computing, Ausgabe 2, 2025, ISSN 3004-8672
Herausgeber:
Springer Science and Business Media LLC
DOI:
10.1038/S44335-025-00025-5
Autoren:
I. Benguettat-El Mokhtari, R. Pachat, V. Porée, A. Lamperti, Y. Roussigné, M.-A. Syskaki, J. Wrona, G. Bernard, A. Cataldo, A. Resta, A. Nicolaou, S. Ono, S. M. Chérif, J. Langer, D. Ravelosona, M. Belmeguenai, A. Solignac, L. Herrera Diez
Veröffentlicht in:
Applied Physics Letters, Ausgabe 126, 2025, ISSN 0003-6951
Herausgeber:
AIP Publishing
DOI:
10.1063/5.0270206
Autoren:
Guillaume Bernard, Xavier Lafosse, Claudia Tataru, Maria-Andromachi Syskaki, Alan Durnez, Frederic Mahut, Dafiné Ravelosona, Juergen Langer, Liza Herrera Diez
Veröffentlicht in:
Nano Letters, 2025, ISSN 1530-6984
Herausgeber:
American Chemical Society (ACS)
DOI:
10.1021/ACS.NANOLETT.5C02735
Autoren:
Guillaume Bernard, Kellian Cottart, Maria-Andromachi Syskaki, Victor Porée, Andrea Resta, Alessandro Nicolaou, Alan Durnez, Shimpei Ono, Ariam Mora Hernandez, Juergen Langer, Damien Querlioz, Liza Herrera Diez
Veröffentlicht in:
Nano Letters, 2025, ISSN 1530-6984
Herausgeber:
American Chemical Society (ACS)
DOI:
10.1021/acs.nanolett.4c05247
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