Periodic Reporting for period 1 - 2DSPIN-TECH (2D Heterostructure Non-volatile Spin Memory Technology)
Periodo di rendicontazione: 2023-12-01 al 2025-05-31
Modern society relies on electronic technologies, which are now reaching their limits in terms of performance, speed, miniaturization, and energy efficiency. Advancing further requires new approaches to technologies that can store large amounts of data, read/write at high speeds, consume minimal power, and retain information after shutdown —a combination still challenging to achieve.
2DSPIN-TECH is working to address these challenges by developing new devices that utilize the spin degree of freedom in electronics with a 2D materials platform, enabling energy-efficient, fast, and non-volatile memory. While recent advances in the spin-orbit torque (SOT) mechanism for memory technology are promising, current materials are inefficient, needing high currents and magnetic fields. 2DSPIN-TECH aims to introduce 2D materials like layered semiconductors, semimetals and ferromagnets, which can offer atomic-scale control, ultra-smooth interfaces, and strong electric field sensitivity.
The project's goal is to build all-2D SOT devices, where a spin-orbit material switches the magnetization of an adjacent 2D ferromagnet. This control enables device optimization through interface engineering, twist angle, and electric fields. The project plans to take technology from basic research (TRL1-2) to prototype devices (TRL3-4), demonstrating fast and energy-efficient switching at room temperature without magnetic fields. This could enable a new generation of technologies for memory and memory in computing applications to support artificial intelligence and edge computing.
2DSPIN-TECH is working to address these challenges by developing new devices that utilize the spin degree of freedom in electronics with a 2D materials platform, enabling energy-efficient, fast, and non-volatile memory. While recent advances in the spin-orbit torque (SOT) mechanism for memory technology are promising, current materials are inefficient, needing high currents and magnetic fields. 2DSPIN-TECH aims to introduce 2D materials like layered semiconductors, semimetals and ferromagnets, which can offer atomic-scale control, ultra-smooth interfaces, and strong electric field sensitivity.
The project's goal is to build all-2D SOT devices, where a spin-orbit material switches the magnetization of an adjacent 2D ferromagnet. This control enables device optimization through interface engineering, twist angle, and electric fields. The project plans to take technology from basic research (TRL1-2) to prototype devices (TRL3-4), demonstrating fast and energy-efficient switching at room temperature without magnetic fields. This could enable a new generation of technologies for memory and memory in computing applications to support artificial intelligence and edge computing.
2DSPIN-TECH investigated 2D materials for spintronic memory devices, from synthesis to applications in non-volatile memory. The project began with the growth of spin-orbit materials (2DSOMs) and 2D ferromagnets (2DFMs). 2D semiconductors, such as Janus transition metal dichalcogenides, were grown, which exhibit asymmetric crystal structures, and are expected to provide out-of-plane current-induced spin polarization. On the other hand, Weyl semimetals exhibit large out-of-plane spin polarization from strong spin-orbit coupling and broken symmetry, showing promises for memory devices.
2DFMs, such as cobalt- and nickel-doped Fe₅GeTe2 and Fe₃GaTe2 were grown, showing stable magnetic properties above room temperature, addressing a key challenge in 2D magnetism. Doping tunes Curie temperature and magnetic anisotropy and some compositions show coexistence of ferromagnetic and antiferromagnetic orders above room temperature, creating intrinsic exchange bias and canted perpendicular magnetism. This non-trivial magnetic order enables energy-efficient, magnetic field-free, deterministic spin-orbit torque (SOT) switching.
Stacked in van der Waals heterostructures, these layered materials allow customizable interfaces. Theoretical studies show how twisting layers affect spin-orbit and magnetic proximity interactions. Devices from such stacks reveal spin-orbit effects, such as Rashba and Ising splitting, which enable control spin orientation electrically.
Finally, we built foundational spin-orbit torque memory devices, demonstrating energy-efficient magnetization switching. Combining TaIrTe₄ and Fe₃GaTe2 heterostructures enabled deterministic magnetization switching at room temperature using simple electrical pulse current, without the need for external magnets, thereby advancing efficient memory technology.
Overall, 2DSPIN-TECH established a foundation for energy-efficient, all-electric memory devices based on van der Waals heterostructures. Breakthroughs in material synthesis, interface control, out-of-plane spin polarization, and magnetization switching reveal new electronic functionalities. Next steps include optimizing device performance and parameters at the atomic level, supported by advanced simulations to better understand ferromagnets and spin-orbit torques, thereby guiding the design of next-generation spintronic devices.
2DFMs, such as cobalt- and nickel-doped Fe₅GeTe2 and Fe₃GaTe2 were grown, showing stable magnetic properties above room temperature, addressing a key challenge in 2D magnetism. Doping tunes Curie temperature and magnetic anisotropy and some compositions show coexistence of ferromagnetic and antiferromagnetic orders above room temperature, creating intrinsic exchange bias and canted perpendicular magnetism. This non-trivial magnetic order enables energy-efficient, magnetic field-free, deterministic spin-orbit torque (SOT) switching.
Stacked in van der Waals heterostructures, these layered materials allow customizable interfaces. Theoretical studies show how twisting layers affect spin-orbit and magnetic proximity interactions. Devices from such stacks reveal spin-orbit effects, such as Rashba and Ising splitting, which enable control spin orientation electrically.
Finally, we built foundational spin-orbit torque memory devices, demonstrating energy-efficient magnetization switching. Combining TaIrTe₄ and Fe₃GaTe2 heterostructures enabled deterministic magnetization switching at room temperature using simple electrical pulse current, without the need for external magnets, thereby advancing efficient memory technology.
Overall, 2DSPIN-TECH established a foundation for energy-efficient, all-electric memory devices based on van der Waals heterostructures. Breakthroughs in material synthesis, interface control, out-of-plane spin polarization, and magnetization switching reveal new electronic functionalities. Next steps include optimizing device performance and parameters at the atomic level, supported by advanced simulations to better understand ferromagnets and spin-orbit torques, thereby guiding the design of next-generation spintronic devices.
The 2DSPIN-TECH project has made significant advances in 2D materials synthesis, device engineering, and spintronic functionality, demonstrating spin-orbit torque (SOT) memory devices well beyond the current state of the art. The project successfully synthesized novel 2D spin-orbit materials (2DSOMs) exhibiting giant out-of-plane spin polarization and 2D ferromagnets (2DFMs) with Curie temperatures exceeding room temperature, meeting a critical threshold for practical device applications. Developed materials include Janus transition metal dichalcogenides, topological semimetals and ferromagnets, all with high purity and crystallinity. These materials outperform conventional materials in spin conversion efficiency.
By assembling these materials into van der Waals heterostructures, the project demonstrated new device architectures with controlled interfacial spin-orbit and magnetic interactions. A major achievement was the demonstration of deterministic, field-free SOT switching, a longstanding challenge. Devices made from van der Waals materials heterostructures exhibit magnetization switching, characterized by large spin Hall conductivities and efficient current-induced torques. These results surpass the current state of the art while significantly enhancing energy efficiency.
Advancements:
The developments in 2DSPIN-TECH directly address the most pressing challenges in emerging memory technology. The project successfully demonstrated van der Waals materials and heterostructures for SOT devices. The performance metrics, including switching current density and field-free operation at room temperature, indicate strong potential for further developments. A significant reduction in switching current density reduces overall power consumption. Further developments need to take advantage of tunability of 2D materials with external control via gate voltages and twist angle to enhance device performance.
Key needs for further uptake and success:
To transition from lab innovation to market-ready products, several enablers are necessary. Ongoing work focuses on understanding core phenomena, enhancing device performance, and improving power efficiency. In the future, the production of scalable thin films, enhancing integration with current technology, and optimizing fabrication for wafer-scale production are necessary. In the global race for new memory technology, stronger international networks are needed for competitiveness, and knowledge exchange is necessary.
By assembling these materials into van der Waals heterostructures, the project demonstrated new device architectures with controlled interfacial spin-orbit and magnetic interactions. A major achievement was the demonstration of deterministic, field-free SOT switching, a longstanding challenge. Devices made from van der Waals materials heterostructures exhibit magnetization switching, characterized by large spin Hall conductivities and efficient current-induced torques. These results surpass the current state of the art while significantly enhancing energy efficiency.
Advancements:
The developments in 2DSPIN-TECH directly address the most pressing challenges in emerging memory technology. The project successfully demonstrated van der Waals materials and heterostructures for SOT devices. The performance metrics, including switching current density and field-free operation at room temperature, indicate strong potential for further developments. A significant reduction in switching current density reduces overall power consumption. Further developments need to take advantage of tunability of 2D materials with external control via gate voltages and twist angle to enhance device performance.
Key needs for further uptake and success:
To transition from lab innovation to market-ready products, several enablers are necessary. Ongoing work focuses on understanding core phenomena, enhancing device performance, and improving power efficiency. In the future, the production of scalable thin films, enhancing integration with current technology, and optimizing fabrication for wafer-scale production are necessary. In the global race for new memory technology, stronger international networks are needed for competitiveness, and knowledge exchange is necessary.