Sustainable Indium Phosphide (InP) platform and ecosystem upscaling, enabling future mass market (sub-)THz applications

Project Information

Move2THz

Grant agreement ID: 101139842

DOI

10.3030/101139842

EC signature date 16 May 2024

Start date 1 June 2024

End date 31 May 2027

Funded under

• Digital, Industry and Space

Total cost

€ 38 820 454,45

EU contribution

€ 11 963 652,14

Coordinated by

SOITEC SA
France

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Links to deliverables and publications from FP7 projects, as well as links to some specific result types such as dataset and software, are dynamically retrieved from OpenAIRE .

Deliverables

Documents, reports (1)

Dissemination and Communication Plan

Publications

Peer reviewed articles (8)

Record 35% Power-Added Efficiency at 170 GHz in 300-nm InP/GaAsSb DHBTs

Author(s): Sara Hamzeloui, Akshay M. Arabhavi, Filippo Ciabattini, Giorgio Bonomo, Mojtaba Ebrahimi, Rimjhim Chaudhary, Markus Müller, Olivier Ostinelli, Michael Schröter, Colombo R. Bolognesi
Published in: IEEE Microwave and Wireless Technology Letters, Issue 34, 2024, ISSN 2771-9588
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/LMWT.2024.3412964

Achieving Optimal Impact Ionization-Limited Breakdown Voltages in Scaled mm-Wave InP/GaInAsSb DHBTs

Author(s): S. Hamzeloui, A. M. Arabhavi, F. Ciabattini, M. Ebrahimi, O. Ostinelli, C. R. Bolognesi
Published in: IEEE Transactions on Electron Devices, Issue 72, 2025, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/TED.2024.3523879

InP/GaAsSb Double Heterojunction Bipolar Transistor Characterization and Compact Modeling up to 500 GHz

Author(s): Marina Deng, Chhandak Mukherjee, Lucas Réveil, Akshay M. Arabhavi, Sara Hamzeloui, Colombo R. Bolognesi, Magali De Matos, Cristell Maneux
Published in: IEEE Transactions on Electron Devices, Issue 72, 2024, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/TED.2024.3506505

Large-signal characterization of THz emitter-fin InP/GaAsSb DHBTs with record G-band power added efficiency

Author(s): Filippo Ciabattini, Sara Hamzeloui, Akshay Mahadev Arabhavi, Mojtaba Ebrahimi, Olivier Ostinelli, Colombo Bolognesi
Published in: International Journal of Microwave and Wireless Technologies, Issue 17, 2025, ISSN 1759-0787
Publisher: Cambridge University Press (CUP)
DOI: 10.1017/S175907872510192X

Improved device reliability for strain-balanced InP HBT growth on InPOSi

Author(s): Y. Mols, R. Alcotte, Z.X. Guo, A. Vais, S. Yadav, A. Possberg, M. De Maeyer, P. Swekis, D. Colucci, C. Roda Neve, B. Ghyselen, U. Peralagu, B. Parvais, N. Collaert, R. Langer, B. Kunert
Published in: Materials Science in Semiconductor Processing, Issue 212, 2026, ISSN 1369-8001
Publisher: Elsevier BV
DOI: 10.1016/J.MSSP.2026.110771

Thermal strain management of III–V heterostructures grown on InP-on-silicon (InPoSi) substrates

Author(s): C. Besancon, F. Martin, B. Ghyselen, L. Largeau, F. Fournel, L. Sanchez, T. Bria, O. Mourey, C. Navone, J. Decobert
Published in: Journal of Applied Physics, Issue 138, 2025, ISSN 0021-8979
Publisher: AIP Publishing
DOI: 10.1063/5.0276168

94-GHz Four-Way Combined Power Amplifiers With 19.2-dBm Output Power in 250-nm InP/GaAsSb DHBT Technology

Author(s): Sara Hamzeloui, Akshay M. Arabhavi, Filippo Ciabattini, Mojtaba Ebrahimi, Giorgio Bonomo, Andrea Cercaci, Olivier Ostinelli, Colombo R. Bolognesi
Published in: IEEE Microwave and Wireless Technology Letters, Issue 35, 2025, ISSN 2771-9588
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/LMWT.2025.3628395

n+ Doped In_0.53Ga_0.47As Using Di‐Tert‐Butylsilane in a Vertical MOVPE Reactor

Author(s): Alexander Possberg, Fabian van Essen, Hao Zhang, Jonas Watermann, Jonathan Abts, Jan Ebbert, Konrad Mueller, Patrick Häuser, Lisa Liborius, Nils Weimann
Published in: physica status solidi (a), 2025, ISSN 1862-6300
Publisher: Wiley
DOI: 10.1002/PSSA.202500407

Conference proceedings (8)

InP DHBT AMUX Integrated Circuits for Beyond-200-Gbaud Optical Communications

Author(s): Romain Hersent, Qian Hu, Agnieszka Konczykowska, Mohand Achouche, Bertrand Ardouin
Published in: 2025 IEEE Photonics Society Summer Topicals Meeting Series (SUM), 2025, ISSN 2376-8614
Publisher: IEEE
DOI: 10.1109/SUM65312.2025.11121755

InP/GaAsSb Double Heterojunction Bipolar Transistors on Silicon Delivering P _OUT,SAT > 2.2 W/mm and PAE > 38% at 140 GHz

Author(s): F. Ciabattini, S. Hamzeloui, A. M. Arabhavi, G. Bonomo, M. Ebrahimi, A. Cercaci, O. Ostinelli, C. R. Bolognesi
Published in: 2025 IEEE International Electron Devices Meeting (IEDM), 2026
Publisher: IEEE
DOI: 10.1109/IEDM50572.2025.11353578

First Demonstration of InP HBTs on InP-on-Si (InPOSi) Substrate: A Cost-Effective and Sustainable III/V-on-Si Technology for Advanced RF Applications

Author(s): A. Vais, A. Kumar, S. Yadav, G. Boccardi, Y. Mols, R. Alcotte, B. Vermeersch, U. Peralagu, C. Roda Neve, B. Ghyselen, B. Parvais, B. Kunert, and N. Collaert.
Published in: 2025
Publisher: CS MANTECH Conference

Benefits of On-wafer Calibration for RF Characterization of InP DHBT Technology Devices

Author(s): CISSE, Moussa; Davy, Nil; Nodjiadjim, Virginie; Ardouin, Bertrand; Mismer, Colin; Maneux, Cristell; Marc, Franc¸ois; Deng, Marina
Published in: GDR_SOC2 Conference, 2025
Publisher: Zenodo
DOI: 10.5281/ZENODO.17921949

Fabrication and development of InP HEMTs on silicon substrate based on a new integration technique

Author(s): Francesco Fortunato, Nelson Rebelo, Claire Besancon, Florence Martin, Bruno Ghyselen, Jean Decobert, Johan Bergsten, Helena Rodilla
Published in: 2025 50th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2026, ISSN 2162-2035
Publisher: IEEE
DOI: 10.1109/IRMMW-THZ61557.2025.11320086

Multi-Finger InP/GaAsSb DHBTs with Non-Uniform Emitter Finger Widths for Improved Thermal Performance

Author(s): Andrea Cercaci, Sara Hamzeloui, Filippo Ciabattini, Mojtaba Ebrahimi, Akshay M. Arabhavi, Olivier Ostinelli, Colombo R. Bolognesi
Published in: 2025 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2025
Publisher: IEEE
DOI: 10.1109/BCICTS63111.2025.11211401

High-Efficiency >110-GHz-Bandwidth 4-Vppd InP-DHBT Linear Modulator Driver for Beyond-200-GBd Optical Transceivers

Author(s): R. Hersent, F. Blache, F. Jorge, V. Nodjiadjim, N. Davy, C. Mismer, M. Riet, L. Iotti, A. Rylyakov, A. Konczykowska, B. Ardouin
Published in: 2025 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2025, ISSN 2831-4999
Publisher: IEEE
DOI: 10.1109/BCICTS63111.2025.11211017

Analysis of InGaAsP Multi-Quantum Wells Directly Grown on InP-on-Si Wafers for Photonic Integration

Author(s): Jhe-An Lin, Akanksha Kapoor, Marcel Verheijen, Victor Dolores Calzadilla, Kevin Williams, Yuqing Jiao
Published in: 2026 IEEE Silicon Photonics Conference (SiPhotonics), 2026
Publisher: IEEE
DOI: 10.1109/SIPHOTONICS68911.2026.11520765

Book chapters (8)

RF Technology Roadmap for 5G and 6G RF Front-end Systems

Author(s): Yvan Morandini
Published in: Key enabling technologies for future wireless, wired, optical and satcom applications, 2024
Publisher: River Publishers
DOI: 10.1201/9781003587309-2

SiGe BiCMOS & III-V Technologies Heterogeneous Integration Challenges

Author(s): Frederic Gianesello
Published in: Key Enabling Technologies for Future Wireless, Wired, Optical and Satcom Applications, 2024
Publisher: River Publishers
DOI: 10.13052/RP-9788770046640

Challenges for 2.5D and 3D Integration of InP HBT Technology

Author(s): Bertrand Ardouin; Tom K. Johansen; Antoine Chauvet; Romain Hersent; Virginie Nodjiadjim; Agnieszka Konczykowska; Nil Davy; Muriel Riet; Colin Mismer
Published in: Key enabling technologies for future wireless, wired, optical and satcom applications ISBN: 9788770046664, 2024
Publisher: River Publishers
DOI: 10.1201/9781003587309-9

 Appendix InP on Si Technologies for Next-Generation Optical Communication High-speed Analog Front-Ends

Author(s): Romain Hersent
Published in: Key enabling technologies for future wireless, wired, optical and satcom applications ISBN: 9788770046664, 2024
Publisher: River Publishers
DOI: 10.1201/9781003587309-14

Heterointegration Approaches for InP-HBT Technologies for 5G Applications and Beyond

Author(s): Hady Yacoub
Published in: 2024
Publisher: River Publishers

A CMOS Compatible III-V-on-300 mm Si Technology for Future High-speed Communication Systems: and Possibilities

Author(s): A. Vais, A. Kumar, G. Boccardi, S. Yadav, Y. Mols, R. Alcotte, B. Vermeersch, M. Ingels, U. Peralagu, C. Roda Neve, B. Ghyselen, B. Parvais, P. Wambacq, B. Kunert, N. Collaert
Published in: Key enabling technologies for future wireless, wired, optical and satcom applications, 2024
Publisher: River Publishers
DOI: 10.1201/9781003587309-4

B55X: A SHIFT in STMicroelectronics BiCMOS Technologies

Author(s): P. Chevalier, A. Gauthier, N. Guitard, V. Milon, F. Monsieur, N. Denier, C. Deglise-Favre, D. Céli, C. Durand, O. Foissey, F. Sonnerat, F. Gianesello, D. Gloria
Published in: Key enabling technologies for future wireless, wired, optical and satcom applications, 2024
Publisher: River Publishers
DOI: 10.1201/9781003587309-1

Advanced Substrate Technologies for Sub-THz Era

Author(s): François Brunier
Published in: Key enabling technologies for future wireless, wired, optical and satcom applications, 2024
Publisher: River Publishers
DOI: 10.1201/9781003587309-3

Monographic books (1)

Key enabling technologies for future wireless, wired, optical and satcom applications

Author(s): Björn Debaillie, Philippe Ferrari, Didier Belot, François Brunier, Christophe Gaquiere, Pierre Busson, Urtė Steikūnienė
Published in: 2024
Publisher: River Publishers
DOI: 10.1201/9781003587309

Other (1)

Benefits of On-wafer Calibration for RF Characterization of InP DHBT Technology Devices

Author(s): Cisse Moussa, Davy Nil, Nodjiadjim Virginie, Ardouin Bertrand, Mismer Colin, Maneux Cristell, Marc François, and Deng Marina.
Published in: GDR_SOC2 Conference, 2025
Publisher: Zenodo
DOI: 10.5281/ZENODO.17921949