Sustainable Indium Phosphide (InP) platform and ecosystem upscaling, enabling future mass market (sub-)THz applications

Información del proyecto

Move2THz

Identificador del acuerdo de subvención: 101139842

DOI

10.3030/101139842

Fecha de la firma de la CE 16 Mayo 2024

Fecha de inicio 1 Junio 2024

Fecha de finalización 31 Mayo 2027

Financiado con arreglo a

• Digital, Industry and Space

Coste total

€ 38 820 454,45

Aportación de la UE

€ 11 963 652,14

Coordinado por

SOITEC SA
France

CORDIS proporciona enlaces a los documentos públicos y las publicaciones de los proyectos de los programas marco HORIZONTE.

Los enlaces a los documentos y las publicaciones de los proyectos del Séptimo Programa Marco, así como los enlaces a algunos tipos de resultados específicos, como conjuntos de datos y «software», se obtienen dinámicamente de OpenAIRE .

Resultado final

Documents, reports (1)

Dissemination and Communication Plan

Publicaciones

Peer reviewed articles (8)

Record 35% Power-Added Efficiency at 170 GHz in 300-nm InP/GaAsSb DHBTs

Autores: Sara Hamzeloui, Akshay M. Arabhavi, Filippo Ciabattini, Giorgio Bonomo, Mojtaba Ebrahimi, Rimjhim Chaudhary, Markus Müller, Olivier Ostinelli, Michael Schröter, Colombo R. Bolognesi
Publicado en: IEEE Microwave and Wireless Technology Letters, Edición 34, 2024, ISSN 2771-9588
Editor: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/LMWT.2024.3412964

Achieving Optimal Impact Ionization-Limited Breakdown Voltages in Scaled mm-Wave InP/GaInAsSb DHBTs

Autores: S. Hamzeloui, A. M. Arabhavi, F. Ciabattini, M. Ebrahimi, O. Ostinelli, C. R. Bolognesi
Publicado en: IEEE Transactions on Electron Devices, Edición 72, 2025, ISSN 0018-9383
Editor: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/TED.2024.3523879

InP/GaAsSb Double Heterojunction Bipolar Transistor Characterization and Compact Modeling up to 500 GHz

Autores: Marina Deng, Chhandak Mukherjee, Lucas Réveil, Akshay M. Arabhavi, Sara Hamzeloui, Colombo R. Bolognesi, Magali De Matos, Cristell Maneux
Publicado en: IEEE Transactions on Electron Devices, Edición 72, 2024, ISSN 0018-9383
Editor: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/TED.2024.3506505

Large-signal characterization of THz emitter-fin InP/GaAsSb DHBTs with record G-band power added efficiency

Autores: Filippo Ciabattini, Sara Hamzeloui, Akshay Mahadev Arabhavi, Mojtaba Ebrahimi, Olivier Ostinelli, Colombo Bolognesi
Publicado en: International Journal of Microwave and Wireless Technologies, Edición 17, 2025, ISSN 1759-0787
Editor: Cambridge University Press (CUP)
DOI: 10.1017/S175907872510192X

Improved device reliability for strain-balanced InP HBT growth on InPOSi

Autores: Y. Mols, R. Alcotte, Z.X. Guo, A. Vais, S. Yadav, A. Possberg, M. De Maeyer, P. Swekis, D. Colucci, C. Roda Neve, B. Ghyselen, U. Peralagu, B. Parvais, N. Collaert, R. Langer, B. Kunert
Publicado en: Materials Science in Semiconductor Processing, Edición 212, 2026, ISSN 1369-8001
Editor: Elsevier BV
DOI: 10.1016/J.MSSP.2026.110771

Thermal strain management of III–V heterostructures grown on InP-on-silicon (InPoSi) substrates

Autores: C. Besancon, F. Martin, B. Ghyselen, L. Largeau, F. Fournel, L. Sanchez, T. Bria, O. Mourey, C. Navone, J. Decobert
Publicado en: Journal of Applied Physics, Edición 138, 2025, ISSN 0021-8979
Editor: AIP Publishing
DOI: 10.1063/5.0276168

94-GHz Four-Way Combined Power Amplifiers With 19.2-dBm Output Power in 250-nm InP/GaAsSb DHBT Technology

Autores: Sara Hamzeloui, Akshay M. Arabhavi, Filippo Ciabattini, Mojtaba Ebrahimi, Giorgio Bonomo, Andrea Cercaci, Olivier Ostinelli, Colombo R. Bolognesi
Publicado en: IEEE Microwave and Wireless Technology Letters, Edición 35, 2025, ISSN 2771-9588
Editor: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/LMWT.2025.3628395

n+ Doped In_0.53Ga_0.47As Using Di‐Tert‐Butylsilane in a Vertical MOVPE Reactor

Autores: Alexander Possberg, Fabian van Essen, Hao Zhang, Jonas Watermann, Jonathan Abts, Jan Ebbert, Konrad Mueller, Patrick Häuser, Lisa Liborius, Nils Weimann
Publicado en: physica status solidi (a), 2025, ISSN 1862-6300
Editor: Wiley
DOI: 10.1002/PSSA.202500407

Conference proceedings (8)

InP DHBT AMUX Integrated Circuits for Beyond-200-Gbaud Optical Communications

Autores: Romain Hersent, Qian Hu, Agnieszka Konczykowska, Mohand Achouche, Bertrand Ardouin
Publicado en: 2025 IEEE Photonics Society Summer Topicals Meeting Series (SUM), 2025, ISSN 2376-8614
Editor: IEEE
DOI: 10.1109/SUM65312.2025.11121755

InP/GaAsSb Double Heterojunction Bipolar Transistors on Silicon Delivering P _OUT,SAT > 2.2 W/mm and PAE > 38% at 140 GHz

Autores: F. Ciabattini, S. Hamzeloui, A. M. Arabhavi, G. Bonomo, M. Ebrahimi, A. Cercaci, O. Ostinelli, C. R. Bolognesi
Publicado en: 2025 IEEE International Electron Devices Meeting (IEDM), 2026
Editor: IEEE
DOI: 10.1109/IEDM50572.2025.11353578

First Demonstration of InP HBTs on InP-on-Si (InPOSi) Substrate: A Cost-Effective and Sustainable III/V-on-Si Technology for Advanced RF Applications

Autores: A. Vais, A. Kumar, S. Yadav, G. Boccardi, Y. Mols, R. Alcotte, B. Vermeersch, U. Peralagu, C. Roda Neve, B. Ghyselen, B. Parvais, B. Kunert, and N. Collaert.
Publicado en: 2025
Editor: CS MANTECH Conference

Benefits of On-wafer Calibration for RF Characterization of InP DHBT Technology Devices

Autores: CISSE, Moussa; Davy, Nil; Nodjiadjim, Virginie; Ardouin, Bertrand; Mismer, Colin; Maneux, Cristell; Marc, Franc¸ois; Deng, Marina
Publicado en: GDR_SOC2 Conference, 2025
Editor: Zenodo
DOI: 10.5281/ZENODO.17921949

Fabrication and development of InP HEMTs on silicon substrate based on a new integration technique

Autores: Francesco Fortunato, Nelson Rebelo, Claire Besancon, Florence Martin, Bruno Ghyselen, Jean Decobert, Johan Bergsten, Helena Rodilla
Publicado en: 2025 50th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2026, ISSN 2162-2035
Editor: IEEE
DOI: 10.1109/IRMMW-THZ61557.2025.11320086

Multi-Finger InP/GaAsSb DHBTs with Non-Uniform Emitter Finger Widths for Improved Thermal Performance

Autores: Andrea Cercaci, Sara Hamzeloui, Filippo Ciabattini, Mojtaba Ebrahimi, Akshay M. Arabhavi, Olivier Ostinelli, Colombo R. Bolognesi
Publicado en: 2025 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2025
Editor: IEEE
DOI: 10.1109/BCICTS63111.2025.11211401

High-Efficiency >110-GHz-Bandwidth 4-Vppd InP-DHBT Linear Modulator Driver for Beyond-200-GBd Optical Transceivers

Autores: R. Hersent, F. Blache, F. Jorge, V. Nodjiadjim, N. Davy, C. Mismer, M. Riet, L. Iotti, A. Rylyakov, A. Konczykowska, B. Ardouin
Publicado en: 2025 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2025, ISSN 2831-4999
Editor: IEEE
DOI: 10.1109/BCICTS63111.2025.11211017

Analysis of InGaAsP Multi-Quantum Wells Directly Grown on InP-on-Si Wafers for Photonic Integration

Autores: Jhe-An Lin, Akanksha Kapoor, Marcel Verheijen, Victor Dolores Calzadilla, Kevin Williams, Yuqing Jiao
Publicado en: 2026 IEEE Silicon Photonics Conference (SiPhotonics), 2026
Editor: IEEE
DOI: 10.1109/SIPHOTONICS68911.2026.11520765

Book chapters (8)

RF Technology Roadmap for 5G and 6G RF Front-end Systems

Autores: Yvan Morandini
Publicado en: Key enabling technologies for future wireless, wired, optical and satcom applications, 2024
Editor: River Publishers
DOI: 10.1201/9781003587309-2

SiGe BiCMOS & III-V Technologies Heterogeneous Integration Challenges

Autores: Frederic Gianesello
Publicado en: Key Enabling Technologies for Future Wireless, Wired, Optical and Satcom Applications, 2024
Editor: River Publishers
DOI: 10.13052/RP-9788770046640

Challenges for 2.5D and 3D Integration of InP HBT Technology

Autores: Bertrand Ardouin; Tom K. Johansen; Antoine Chauvet; Romain Hersent; Virginie Nodjiadjim; Agnieszka Konczykowska; Nil Davy; Muriel Riet; Colin Mismer
Publicado en: Key enabling technologies for future wireless, wired, optical and satcom applications ISBN: 9788770046664, 2024
Editor: River Publishers
DOI: 10.1201/9781003587309-9

 Appendix InP on Si Technologies for Next-Generation Optical Communication High-speed Analog Front-Ends

Autores: Romain Hersent
Publicado en: Key enabling technologies for future wireless, wired, optical and satcom applications ISBN: 9788770046664, 2024
Editor: River Publishers
DOI: 10.1201/9781003587309-14

Heterointegration Approaches for InP-HBT Technologies for 5G Applications and Beyond

Autores: Hady Yacoub
Publicado en: 2024
Editor: River Publishers

A CMOS Compatible III-V-on-300 mm Si Technology for Future High-speed Communication Systems: and Possibilities

Autores: A. Vais, A. Kumar, G. Boccardi, S. Yadav, Y. Mols, R. Alcotte, B. Vermeersch, M. Ingels, U. Peralagu, C. Roda Neve, B. Ghyselen, B. Parvais, P. Wambacq, B. Kunert, N. Collaert
Publicado en: Key enabling technologies for future wireless, wired, optical and satcom applications, 2024
Editor: River Publishers
DOI: 10.1201/9781003587309-4

B55X: A SHIFT in STMicroelectronics BiCMOS Technologies

Autores: P. Chevalier, A. Gauthier, N. Guitard, V. Milon, F. Monsieur, N. Denier, C. Deglise-Favre, D. Céli, C. Durand, O. Foissey, F. Sonnerat, F. Gianesello, D. Gloria
Publicado en: Key enabling technologies for future wireless, wired, optical and satcom applications, 2024
Editor: River Publishers
DOI: 10.1201/9781003587309-1

Advanced Substrate Technologies for Sub-THz Era

Autores: François Brunier
Publicado en: Key enabling technologies for future wireless, wired, optical and satcom applications, 2024
Editor: River Publishers
DOI: 10.1201/9781003587309-3

Monographic books (1)

Key enabling technologies for future wireless, wired, optical and satcom applications

Autores: Björn Debaillie, Philippe Ferrari, Didier Belot, François Brunier, Christophe Gaquiere, Pierre Busson, Urtė Steikūnienė
Publicado en: 2024
Editor: River Publishers
DOI: 10.1201/9781003587309

Other (1)

Benefits of On-wafer Calibration for RF Characterization of InP DHBT Technology Devices

Autores: Cisse Moussa, Davy Nil, Nodjiadjim Virginie, Ardouin Bertrand, Mismer Colin, Maneux Cristell, Marc François, and Deng Marina.
Publicado en: GDR_SOC2 Conference, 2025
Editor: Zenodo
DOI: 10.5281/ZENODO.17921949