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Sustainable Indium Phosphide (InP) platform and ecosystem upscaling, enabling future mass market (sub-)THz applications

Project description

Indium Phosphate platform for efficient electronic devise use

Electronic devices have advanced, driving the need for faster wireless applications operating at sub-THz frequencies. A commercially viable technology is needed to efficiently use these frequencies. Indium Phosphate (InP) stands out for its high-frequency performance, but cost and scarcity limit its use to niche markets. The EU-funded Move2THz project aims to revolutionise the InP platform by creating an integrated European value chain for sub-THz frequency operation. The project will establish a new global standard for InP-on-silicon technology, reduce the use of rare InP resources, and promote the adoption of the European InP platform. This initiative will strengthen Europe’s position in the semiconductor industry, create new market opportunities, and accelerate the adoption of InP technology.

Objective

Electronic devices evolved significantly, fuelling the digital transformation towards a connected society. To growing need for performance, speed and efficiency pushes wireless applications to operate at sub-THz frequencies and beyond. Today’s technologies, however, come short to efficiently and effectively utilize these frequencies, even taking into account technological evolutions. A disruptive yet commercially viable technology is urgently needed. Indium Phosphide (InP) has outstanding and unique capabilities to surpass other technologies in terms of high-frequency performance. Today, InP is only adopted in niche markets because of its costly and scarce substrates. Move2THz will transform the InP platform and build a fully integrated European value chain providing commercially attractive, ecology-friendly, mass-market technologies suitable for sub-THz frequency operation and beyond, enabling emerging applications like mobile/data connectivity, imaging and sensing.
To achieve this, Move2THz will radically innovate the manufacturing process by establishing a breakthrough InP-on-silicon (InPoSi) global standard. This facilitates to upscale the wafer size & volume compatible with CMOS manufacturing capacities, while minimizing the use of rare InP resources and ecological footprint. Further up the value chain, the European InP platform will be developed, matured and adopted through substrates, manufacturing, design and foundry services, including integration, packaging and education.
Through Move2THz, the technical excellence provided by our consortium and the technologies developed in this project will significantly strengthen the competitive and sovereign position of Europe. It will secure its supply of semiconductors in a sustainable way for the next generations of wireless applications, generate a wealth of new market opportunities, and make significant contributions to a highly qualified European workforce. To achieve this, InP’s adoptability must accelerate NOW.

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Coordinator

SOITEC SA
Net EU contribution
€ 975 000,00
Address
PARC TEC NO DES FONTAINES CHEMIN DE FRANQUES
38190 Bernin
France

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Region
Auvergne-Rhône-Alpes Rhône-Alpes Isère
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Links
Total cost
€ 8 995 090,00

Participants (24)

Partners (3)