Safer and More Reliable WBG/UWBG-Based MVDC Power Converters

Project Information

SAFEPOWER

Grant agreement ID: 101172940

DOI

10.3030/101172940

EC signature date 5 August 2024

Start date 1 October 2024

End date 30 September 2028

Funded under

• Climate, Energy and Mobility

Total cost

€ 4 332 803,75

EU contribution

€ 4 332 803,75

Coordinated by

AGENCIA ESTATAL CONSEJO SUPERIOR DE INVESTIGACIONES CIENTIFICAS
Spain

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Publications

Conference proceedings (4)

Tuning Silicon Implantation for alpha-Ga2O3 and beta-Ga2O3 MESFET Transistors

Author(s): Vellvehí i Llovet, Aniol; Gallardo, Fernando; Butanovs, Edgars; Chikoidze, Ekaterine; Chi, Zeyu; Rebollo, Jose; Vellvehi, Miquel; Perez-Tomas, Amador
Published in: 8th International Workshop on Ultra-Wide Bandgap Materials and Devices, 2025
DOI: 10.5281/ZENODO.17713047

Study of Ga2O3 thin films homoepitaxially grown on (010), (-201), and (001) substrates.

Author(s): Sallet, Vincent; Amiri, gaelle.amiri; SAID HASSANI, Saïd Assoumani; SARTEL, Corinne; Chauveau, Jean-Michel; Chikoidze, Ekaterine; CHI, Zeyu
Published in: GDR CNRS Matériaux Epitaxiés 2025 (GdR MATEPI 2025), 2025
Publisher: UMR8635 CNRS -UVSQ
DOI: 10.5281/ZENODO.17938860

Anomaly Detection in Power Inverters of Electromechanical Actuators based on Convolutional Neural Network and Long Short-Term Memory Cells

Author(s): Chenyang Lai, Piero Baraldi, null Aruna, Leonardo Baldo, Matteo Davide Lorenzo Dalla Vedova, Gaetano Quattrocchi, Enrico Zio
Published in: 2025 9th International Conference on System Reliability and Safety (ICSRS), 2026
Publisher: IEEE
DOI: 10.1109/ICSRS68021.2025.11422055

Measurement of Free-Carrier Density in a 1.2 kV SiC Schottky Diode under Overstress Conditions

Author(s): Bonet Isidro, Ferran; Aviñó Salvadó, Oriol; JORDA, Xavier; Perpiñà, Xavier
DOI: 10.23919/ISPSD62843.2025.11117483

Peer reviewed articles (4)

Anderson disorder related p-type conductivity and metal-insulator transition in β-Ga2O3

Author(s): Zeyu Chi; Se-Rim Park; Luka Burdiladze; Tamar Tchelidze; Jean-Michel Chauveau; Yves Dumont; Sang-Mo Koo; Zurab Kushitashvili; Amiran Bibilashvili; Gérard Guillot; Amador Pérez-Tomás; Xin-Ying Tsai; Fu-Gow Tarntair; Ray Hua Horng; Ekaterine Chikoidze
Published in: Materials Today Physics, 2024, ISSN 2542-5293
Publisher: Elsevier
DOI: 10.1016/J.MTPHYS.2024.101602

High Voltage Design Strategies for Gallium Oxide Power Devices

Author(s): Martinez, A.; Evans, Jon; Ghosh, Saptarsi; Chikoidze, Ekaterine; Perez-Tomas, Amador; Vellvehi, Miquel; Guy, Owen; Jennings, Michael; Danielle, Goodwin; Nicholas, Edwards; Martinez, A.; Mitchell, J; Asher, J; Monaghan, F; Burnett, J; Fisher, C; Ashraf, H; Colombier, C
Published in: IEEE Transactions on Semiconductor Manufacturing, 2025, ISSN 1558-2345
Publisher: IEEE Transactions on Semiconductor Manufacturing
DOI: 10.1109/TSM.2025.3597872

Measurement of Free-Carrier Density in a 1.2 kV SiC Schottky Diode Under Overstress Conditions

Author(s): Bonet Isidro, Ferran; Aviñó Salvadó, Oriol; JORDA, Xavier; Perpiñà, Xavier
Published in: 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2025, ISSN 1946-0201
Publisher: IEEE
DOI: 10.23919/ISPSD62843.2025.11117483

Single-Event Burnout Mitigation in Silicon VDMOS Power Devices: An Electro-Thermal TCAD Study

Author(s): Eusebio Rodrigo, José Rebollo, Xavier Jordà, José Camps, Llorenç Latorre, Miquel Vellvehi
Published in: Electronics, Issue 15, 2026, ISSN 2079-9292
Publisher: MDPI AG
DOI: 10.3390/ELECTRONICS15061201