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2D Semiconductor Ferroelectric based Switchable Optoelectronics

Project description

Ferroelectric materials to advance 2D semiconductor materials

Advancements in miniaturisation, precision, AI, and automation have enabled the manufacturing of smaller and more efficient components. 2D semiconductor materials are expected to further these advancements by reducing power consumption and enhancing efficiency and miniaturisation. However, design challenges and lack of efficient materials have kept their costs high and their performance low. The EU-funded 2DSFSO project aims to address this by introducing ferroelectric materials to develop devices and components that can be integrated into 2D materials, thereby reducing costs and improving efficiency. Additionally, the project will create a large-area 2D ferroelectric platform to facilitate hybrid 2D semiconductor modulation in future systems.

Objective

The world is foreseeing future electronics in demand of miniaturization, quantum efficiency, and low power consumption with the emergence of novel two-dimensional (2D) semiconductor materials. 2D materials' ultra-thin size, band gap engineering, and structural designing demonstrates high-performance optoelectronic devices but lacks novel materials or manipulation mechanisms to achieve low dark current, high absorption/emission efficiency, and low cost of production. Ferroelectric materials can modulate the mobility, carrier concentration, and band alignment in these 2D materials resulting in non-volatile control of photonic and optoelectronic properties. -In2Se3, a ferroelectric semiconducting material by virtue of its peculiar crystal structure inheriting both in-plane (IP) and out-of-plane polarization (OOP) at room temperature is a game changer that manipulates the band bending and carrier transport can be non-destructive and controllable in the ferroelectricoptoelectronic hybrid systems. The 2D semiconductor ferroelectric switchable optoelectronics (2DSFSO) propose the integration of CVD-synthesized larg-area -In2Se3 and MoS2/doped MoS2 heterostructure devices with multifunctional properties. The peculiar OOP of -In2Se3 can switch the band alignment in the hydrid system from type II to type I exhibiting enhanced photodetection and luminescence within the same device features a switchable optoelectronic system. The cornerstones of the proposal are (a) integrating large area 2D ferroelectric and semiconductor thinfilms by epitaxial growth (b) adoption of various spectroscopic and microscopic techniques to analyze the interface physics to understand the band switching mechanism resulting in multipurpose optoelectronic devices. The large-area 2D ferroelectric platform can act as a universal platform to modulate the 2D semiconductor hybrids that can facilitate functional devices that are indispensable component for the next-generation Internet of Things system.

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Topic(s)

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Funding Scheme

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HORIZON-TMA-MSCA-PF-EF - HORIZON TMA MSCA Postdoctoral Fellowships - European Fellowships

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Call for proposal

Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.

(opens in new window) HORIZON-WIDERA-2023-TALENTS-02

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Coordinator

INSTITUT ZA FIZIKU
Net EU contribution

Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.

€ 161 889,60
Address
BIJENICKA CESTA 46
10000 Zagreb
Croatia

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Region
Hrvatska Grad Zagreb Grad Zagreb
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Research Organisations
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Total cost

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