2D Semiconductor Ferroelectric based Switchable Optoelectronics

Descripción del proyecto

Materiales ferroeléctricos para avanzar en los semiconductores bidimensionales

Los avances en miniaturización, precisión, inteligencia artificial y automatización han permitido fabricar componentes más pequeños y eficientes. Se espera que los materiales semiconductores bidimensionales impulsen los avances reduciendo el consumo de energía y mejorando la eficiencia y la miniaturización. Sin embargo, los problemas de diseño y la falta de materiales eficientes han mantenido sus altos costes y su bajo rendimiento. El equipo del proyecto 2DSFSO, financiado con fondos europeos, pretende solucionar el problema introduciendo materiales ferroeléctricos para desarrollar dispositivos y componentes que puedan integrarse en materiales bidimensionales, reduciendo así los costes y mejorando la eficiencia. Además, el equipo del proyecto creará una plataforma ferroeléctrica bidimensional de gran superficie para facilitar la modulación híbrida de semiconductores bidimensionales en futuros sistemas.

Objetivo

The world is foreseeing future electronics in demand of miniaturization, quantum efficiency, and low power consumption with the emergence of novel two-dimensional (2D) semiconductor materials. 2D materials' ultra-thin size, band gap engineering, and structural designing demonstrates high-performance optoelectronic devices but lacks novel materials or manipulation mechanisms to achieve low dark current, high absorption/emission efficiency, and low cost of production. Ferroelectric materials can modulate the mobility, carrier concentration, and band alignment in these 2D materials resulting in non-volatile control of photonic and optoelectronic properties. -In2Se3, a ferroelectric semiconducting material by virtue of its peculiar crystal structure inheriting both in-plane (IP) and out-of-plane polarization (OOP) at room temperature is a game changer that manipulates the band bending and carrier transport can be non-destructive and controllable in the ferroelectricoptoelectronic hybrid systems. The 2D semiconductor ferroelectric switchable optoelectronics (2DSFSO) propose the integration of CVD-synthesized larg-area -In2Se3 and MoS2/doped MoS2 heterostructure devices with multifunctional properties. The peculiar OOP of -In2Se3 can switch the band alignment in the hydrid system from type II to type I exhibiting enhanced photodetection and luminescence within the same device features a switchable optoelectronic system. The cornerstones of the proposal are (a) integrating large area 2D ferroelectric and semiconductor thinfilms by epitaxial growth (b) adoption of various spectroscopic and microscopic techniques to analyze the interface physics to understand the band switching mechanism resulting in multipurpose optoelectronic devices. The large-area 2D ferroelectric platform can act as a universal platform to modulate the 2D semiconductor hybrids that can facilitate functional devices that are indispensable component for the next-generation Internet of Things system.