Objective
The recently developed methods of semiconductor crystal growth (MBE, MOCVD) have opened an era of new semiconductor devices which incorporate the principles of quantum mechanics in their design and operation. The objective of this project was to provide new knowledge in this area by investigating new concepts in the promising field of quantum semiconductor devices, both experimentally and theoretically. The main efforts were devoted to one- and two-dimensional device operations and to perpendicular transport through multilayers. .
The recently developed methods of semiconductor crystal growth (molecular beam epitaxy (MBE), metal organic chemical vapour deposition (MOCVD)) have opened an era of new semiconductor devices which incorporate the principles of quantum mechanics in their design and operation. The objective of this project was to provide new knowledge in this area by investigating new concepts in the promising field of quantum semiconductor devices, both experimentally and theoretically.
Among the results obtained were:
2-dimensional electron gas and multiquantum wells in the gallium indium phosphide/gallium arsenide system; demonstration of the 2-dimensional hole gas in gallium indium arsenide/indium phosphide;
room temperature demonstration of a superlattice tunnel oscillator;
demonstration of ballistic motion of hot electrons injected from graded gap heterojunctions;
highest reported electron density in a planar doped gallium arsenide structure;
first observation of simultaneous electrical and optical bistability in a semiconductor multilayers structure;
first observation of the quantum Hall effect at the gallium indium, arsenic phosphide/indium phosphide heterojunction;
observation of extremely low dark currents in graded parameter superlattices;
lasing in the gallium indium arsenide/indium phosphide system.
The theorectical work achieved the following:
theory of high field transport in superlattices for the design of novel structures;
theory of graded parameter superlattice structures giving rise to new design rules for photodiodes;
detailed band structure calculations, giving new insights with device implications;
simulation of delta doped gallium arsenide structures allowing both electron states and transport.
Among the results obtained were:
-twodimensional electron gas and multi-quantum wells in the GaInP/GaAs system
-demonstration of the two-dimensional hole gas in GaInAs/InP
-room-temperature demonstration of a superlattice tunnel oscillator
-demonstration of ballistic motion of hot electrons injected from graded-gap heterojunctions
-highest reported electron density in a planardoped GaAs structure
-first observation of simultaneous electrical and optical bistability in a semiconductor multilayer structure
-first observation of the Quantum Hall effect at the GaInAsP/InP heterojunction
-observation of extremely low dark currents in graded parameter superlattices
-lasing in the GaInAs/InP system.
The theoretical work achieved the following:
-theory of high field transport in superlattices for the design of novel structures
-theory of graded parameter superlattice structures giving rise to new design rules for photodiodes
-detailed bandstructure calculations, giving new insights with device implications
-simulation of delta doped GaAs structures allowing both electron states and transport.
The project has generated 85scientific papers and some of the results listed have been fed into other ESPRIT projects(522, 843, 971) on IIIVdevices.
Fields of science (EuroSciVoc)
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques. See: The European Science Vocabulary.
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques. See: The European Science Vocabulary.
- engineering and technology materials engineering crystals
- natural sciences physical sciences quantum physics
- natural sciences chemical sciences inorganic chemistry post-transition metals
- natural sciences physical sciences electromagnetism and electronics semiconductivity
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Coordinator
WD6 1RX Borehamwood
United Kingdom
The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.