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The objective of this project was to improve the characteristics of silicon epitaxial layers grown by molecular beam epitaxy (MBE). Capability of growing structures for microelectronic devices, application of appropriate methods to assess the epitaxial material and aspects of improved silicon MBE process control were also addressed. The project aimed to:
grow silicon and silicon germanium layers by MBE;
measure deposition conditions in situ;
implement and develop techniques for the growth and the characterisation of MBE layers.
Submicron and nanometer doped MBE layers were grown and analysed in detail and the results used for in situ doping control. Multilayer structures for high frequency device applications were made and assessed. Spreading resistance profiling, secondary ion mass spectroscopy (SIMS) and preferential etching proved to be the most useful set of assessment techniques. Equipment with automatic wafer transfer was developed.
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