• The synthesis and formulation of the Si photoresist have been finalized. The material meets industrial requirements in terms of impurity levels and solvent compatibility. EUV patterning performed on industrial equipment demonstrates strong potential for use as a silicon-based patternable hardmask. A scaled up product batch has been produced and shows performance comparable to the lab scale samples, with formulation stability demonstrated for up to three months. Future work will focus on exploring potential markets using a bi-layer integration concept and improving shelf life stability for production-scale formulations.
• The development of metal-containing EUV materials—applicable both as underlayers and as photoresists—has progressed substantially during the project. Five patents on the new concept have been filed. The underlayer materials demonstrated excellent etch selectivity and were requested by customers for demonstration. The metal-containing photoresist achieved high-resolution EUV patterning down to P24 nm. Synthesis and formulation procedures have been optimized to meet industrial requirements, demonstrating good reproducibility. Further work will focus on improving sensitivity and advancing the material for next generation nodes.
• The project did not participate directly in standardization or regulatory efforts. However, we monitored relevant developments and ensured that the technologies and materials developed remain compliant with ECHA and other applicable regulatory frameworks, including anticipated EU-wide legislative requirements.
Overall, the project delivered substantial progress and delivering key performance milestones, demonstrating industrial compatibility, and obtaining early external validation for both Si-based and metal-containing EUV photoresists. These outcomes provide a strong foundation for continued development and potential commercialization.
