Ziel
The objective of STORM was to develop a tool capable of simulating CMOS and bipolar device processes.
The objective of the project is to develop a tool capable of simulating complementary metal oxide semiconductor (CMOS) and bipolar device processes. The end product is a simulation environment, the 'Project Code', incorporating advanced modules for process and device simulation, optimization algorithms, and a user interface. Incorporated within the code will be a set of more accurate models for the simulation of newly developed processes such as rapid thermal annealing (RTA), impurity diffusion from polysilicon and silicide, trench isolation, high energy and multilayer ion implantation, optical lithography, chemical vapour deposition (CVD), and glass reflow.
3 versions of the project code will be produced:
a first (prototype) version integrating the different state of the art simulators;
an intermediate version merging the new or improved models for process simulation, sensitivity analysis according to a significant list of process parameters, and first tentative optimization algorithms;
the final version which includes consolidated models and optimization programmes.
3 main work packages exist. The first develops improved models for process simulation. It is divided in 3 subpackages, dealing with dopant diffusion, thermal oxidation and topography, and ion implantation. The second addresses optimization techniques for device design with the aim of setting up an automatic optimization tool, and the third covers software integration. The project code aims to satisfy the future needs of the integrated circuit (IC) industry. In so far as it will simulate both CMOS and bipolar basic technologies, it will be able to handle the optimization of future bipolar complementary metal oxide semiconductor (BICMOS) processes as well. Advanced models for process simulation have been developed for ion implantation, dopant diffusion in polysilicon, RTA precipitation mechanisms, thermal oxidation, glass reflow and CVD. Optimization tools are under development following 2 alter native approaches: response surface method, and minimization techniques.
The end product is a simulation environment, the "Project Code", incorporating advanced modules for process and device simulation, optimisation algorithms, and a user interface. Incorporated within the code is a set of more accurate models for the simulation of newly developed processes such as rapid thermal annealing, impurity diffusion from polysilicon and silicide, trench isolation, high energy and multilayer ion implantation, optical lithography, chemical vapour deposition, and glass reflow.
STORM was organised around three main work-packages. The first one was developing improved models for process simulation. For management reasons, it was divided in three sub-packages, dealing with dopant diffusion, thermal oxidation and topography, and ion implantation. The second work-package addressed optimisation techniques for device design with the aim of setting up an automatic optimisation tool, the third covered software integration and global validation on industrial applications.
STORM is able to simulate both CMOS and bipolar basic technologies, and to handle the optimisation of future BICMOS processes as well.
Wissenschaftliches Gebiet
- natural scienceschemical sciencesinorganic chemistryinorganic compounds
- natural scienceschemical scienceselectrochemistryelectrolysis
- natural sciencesphysical sciencesastronomyplanetary sciencesplanetary geology
- engineering and technologymaterials engineering
- natural sciencesphysical scienceselectromagnetism and electronicssemiconductivity
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38243 Meyland
Frankreich