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AlGaN and InAlN based microwave components

Publications

Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate

Auteurs: Christian Dua; Sylvain Delage; Enrico Zanoni; Matteo Meneghini; Riccardo Silvestri; M. Oualli; Alberto Zanandrea; Isabella Rossetto; Gaudenzio Meneghesso; Fabiana Rampazzo
Identifiant permanent: Digital Object Identifier:10.1016/j.microrel.2013.07.048

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

Auteurs: Fabiana Rampazzo; Augusto Tazzoli; Franco Zanon; Enrico Zanoni; Giovanni Verzellesi; Gaudenzio Meneghesso; Matteo Meneghini; F. Danesin
Identifiant permanent: Digital Object Identifier:10.1109/tdmr.2008.923743

Measurement of thermal impedance of GaN HEMTs using 3ω method

Auteurs: Jean-Pierre Teyssier; Raymond Quéré; M. Avcu; Raphaël Sommet; A. El-Rafei; G. Callet
Publié dans: HAL CCSD Electronics Letters 2012
Identifiant permanent: Digital Object Identifier:10.1049/el.2012.0979