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Perfectly interfaced nanomaterials for next generation oxide electronics

Ziel

Oxide thin film heterostructures hold the key to a wide range of novel, and energy efficient devices of many different sorts. In the last few years, there has been a plethora of very exciting reports in the top journals on the basic science of single layer oxide films or heterostructure devices. However, the holy grail of applications is still just an event on the horizon. An innovative and emerging materials science led approach is now required to understand the factors at play limiting these highly promising materials, thus opening the door to realising their functional potential. As time progresses the interfaces are playing an ever stronger role in the functionality and multifunctionality. New kinds of interfaces, new ways to control them, and state-of-the art probing of them are all needed to understand how to control and tune them. This proposal strikes at the heart of all these issues and aims to realise the true power of oxide electronics.

Aufforderung zur Vorschlagseinreichung

ERC-2009-AdG
Andere Projekte für diesen Aufruf anzeigen

Gastgebende Einrichtung

THE CHANCELLOR MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE
EU-Beitrag
€ 1 565 873,00
Adresse
TRINITY LANE THE OLD SCHOOLS
CB2 1TN Cambridge
Vereinigtes Königreich

Auf der Karte ansehen

Region
East of England East Anglia Cambridgeshire CC
Aktivitätstyp
Higher or Secondary Education Establishments
Kontakt Verwaltung
Renata Schaeffer (Mr.)
Hauptforscher
Judith Louise Driscoll (Prof.)
Links
Gesamtkosten
Keine Daten

Begünstigte (1)