Other documents
- D52.3 - Newsletters N°1 -8
- Preparation of monomers for very low gap molecular wires on metallic substrates
- measurements of the surface conductance between multiple metallic nanopads grown on semiconductor su
- Polymeristaion of long molecular wires on a passivated semiconductor surface
- characterisation of the surface conductance anisotropy along and across a metallic nanowire grown on
- Characterization of the high conductance of the molecular wires as a function of their length
- 1st year periodic report
- Demonstration of a logic function with an adsorbed molecule
- Fabrication of metallic nano-islands on a H-passivated Ge(001) surface
- Deliverable 3D1.1 (= D31.1)
- models for reconstructed surfaces of GaN(0001) and AlN(0001
- Deliverable 2D1.3 (=D21.3)
- GaN(0001) and AlN(0001) growth and characterization by NC-AFM
- Protocols for creation of dangling bond wires on H:Si(100), H:Ge(100), and MoS2
- dI/dV characteristics of NOR and NAND QHC atomic logic
- Construction of QHC surface atomic circuit NOR and NAND gate on H:Si(100)
- Fabrication of metallic mesa pads on Ge(001) surface pre-patterned with the 2D islands of metallic w
- Preparation of monomers for very low gap molecular wires on insulating substrates
