Altri documenti D52.3 - Newsletters N°1 -8 Preparation of monomers for very low gap molecular wires on metallic substrates measurements of the surface conductance between multiple metallic nanopads grown on semiconductor su Polymeristaion of long molecular wires on a passivated semiconductor surface characterisation of the surface conductance anisotropy along and across a metallic nanowire grown on Characterization of the high conductance of the molecular wires as a function of their length 1st year periodic report Demonstration of a logic function with an adsorbed molecule Fabrication of metallic nano-islands on a H-passivated Ge(001) surface Deliverable 3D1.1 (= D31.1) models for reconstructed surfaces of GaN(0001) and AlN(0001 Deliverable 2D1.3 (=D21.3) GaN(0001) and AlN(0001) growth and characterization by NC-AFM Protocols for creation of dangling bond wires on H:Si(100), H:Ge(100), and MoS2 dI/dV characteristics of NOR and NAND QHC atomic logic Construction of QHC surface atomic circuit NOR and NAND gate on H:Si(100) Fabrication of metallic mesa pads on Ge(001) surface pre-patterned with the 2D islands of metallic w Preparation of monomers for very low gap molecular wires on insulating substrates
