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Conduction Mechanisms in Advanced MOS Technologies

Objective

"Silicon-based technologies are approaching their physical limits, and technology breakthroughs, in terms of materials and processes, will be required as device sizes reach the nano-scale frontier. To face these challenges, a new generation of devices based on a clever combination of selected materials is currently under consideration worldwide. The aim of this project is to investigate the conduction mechanisms, in connection with degradation and breakdown characteristics, of Metal Gate/High-K structures on III-V substrates intended for applications in future MOS transistors. This aspect is primary obstacle to the successful incorporation into mainstream semiconductor process. To the date, no systematic study about these topics in such advanced structures has been carried out.
The project covers all aspect of conduction in the MG/HK/III-V stacks, fresh, stressed and, finally the breakdown event and the conduction over the degraded stacks. The electrical characterization will provide relevant information to contribute to the elaboration of models that are able to predict the life time of devices more accurately.
Leading the transition to advance electronics is a challenge for applied research as it requires specific technologies platforms. That is actually why this proposal is highly interesting. This research project would contribute to achieve excellence in the filed and consequently would attract the interest of the industrial sector of the EU. This proposal aims to define advantages and constrains of advance MG/HK/III-V stacks since they will play a relevant role in the next generation of CMOS manufacture process"

Field of science

  • /natural sciences/physical sciences/electromagnetism and electronics/electrical conductivity/semiconductor

Call for proposal

FP7-PEOPLE-2011-IIF
See other projects for this call

Funding Scheme

MC-IIF - International Incoming Fellowships (IIF)

Coordinator

TECHNION - ISRAEL INSTITUTE OF TECHNOLOGY
Address
Senate Building Technion City
32000 Haifa
Israel
Activity type
Higher or Secondary Education Establishments
EU contribution
€ 250 106
Administrative Contact
Mark Davison (Mr.)