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Single active dopant detection in semiconductor nanowires using electron holography

Ziel

"The end of ""happy scaling"" in the semiconductor industry has lead to innovation being a key parameter in nanoelectronics. Doped nanowires of all types of sizes, shapes and composition are now used as components to build nano-electronic devices, light sources, detectors and for photovoltaic applications. As these devices are reduced in size, the location of individual dopant atoms becomes more important and the behavior of only one or two atoms can dominate their properties. More recently, research into devices that contain a single dopant atom has begun to gain momentum. At this time there is no method that can routinely measure the presence of the single dopant atoms that are inside these devices and our experience in the nanotechnology age has taught us that we cannot make what we cannot see. In 2011, several review papers in high-impact journals have highlighted the need for a technique that can see these atoms. Their detection is now within reach, using a technique known as off-axis electron holography."

Aufforderung zur Vorschlagseinreichung

ERC-2012-StG_20111012
Andere Projekte für diesen Aufruf anzeigen

Gastgebende Einrichtung

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€ 1 500 000,00
Adresse
RUE LEBLANC 25
75015 PARIS 15
Frankreich

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Region
Ile-de-France Ile-de-France Paris
Aktivitätstyp
Research Organisations
Hauptforscher
David Edward Cooper (Dr.)
Kontakt Verwaltung
Marie-Laure Page (Ms.)
Links
Gesamtkosten
Keine Daten

Begünstigte (1)