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Electron Spin Resonance Nano-Imaging for the Analysis of Semiconductor Devices

Objective

The semiconductor industry is a multibillion-dollar endeavor situated at the heart of the modern world. During the development and production of semiconductor devices things can go wrong, and the source of the problems must be analyzed. This is the impetus for another large industry aimed at providing methods for failure analysis (FA) of semiconductor devices. FA systems make use of a variety of sophisticated techniques that provide a wealth of information at very high spatial resolutions. However, current techniques have limitations, especially regarding the non-destructive measurement of the internal structure and material composition of the devices.
Electron spin resonance (ESR) is a well-established technique for the characterization and imaging of paramagnetic materials. In semiconductors, ESR has been used extensively to study paramagnetic properties such as crystal impurities, defects, and dopants that greatly affect the devices’ performance. However, conventional ESR has very limited sensitivity and image resolution, making it unattractive for the study of the sub-micron-scale devices that are in use today. Our current ERC project has recently resulted in a method that improves ESR sensitivity by about 3 orders of magnitude compared to commercial systems. We also enhanced the spatial resolution of ESR-based images to the 100-nm length scale. Such capabilities heighten ESR’s attractiveness as a potential semiconductor-inspection tool. The purpose of the proposed project is to develop a demonstration prototype of a one-sided ESR imaging probe based upon this new methodology. This probe will examine semiconductor wafers and analyze their properties, composition, and structure in a non-destructive manner. We will also provide market research on the field of FA and examine how our new method fits into it. Special attention will be paid to strengthening IP protection for our idea and to finding means to attract more funds to commercialize this technology.

Field of science

  • /natural sciences/physical sciences/electromagnetism and electronics/electrical conductivity/semiconductor
  • /natural sciences/physical sciences/electromagnetism and electronics/semiconductor device

Call for proposal

ERC-2011-PoC
See other projects for this call

Funding Scheme

CSA-SA(POC) - Supporting action (Proof of Concept)

Host institution

TECHNION - ISRAEL INSTITUTE OF TECHNOLOGY
Address
Senate Building Technion City
32000 Haifa
Israel
Activity type
Higher or Secondary Education Establishments
EU contribution
€ 149 820
Administrative Contact
Mark Davison (Mr.)

Beneficiaries (1)

TECHNION - ISRAEL INSTITUTE OF TECHNOLOGY
Israel
EU contribution
€ 149 820
Address
Senate Building Technion City
32000 Haifa
Activity type
Higher or Secondary Education Establishments
Administrative Contact
Mark Davison (Mr.)