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Phase Change Memory Advanced universal Switches through Thin alteRnating laYers

Description du projet


Very advanced nanoelectronic components: design, engineering, technology and manufacturability
Exploiting the potential of engineered Chalcogenide Super Lattices to achieve a breakthrough in power dissipation and switching speed of PC Memories, toward the realization of a "universal memory".

Charge storage has been the main physical mechanism supporting all solid state mass storage memories until now, both DRAM and FLASH. However none of the two main memory types appear to fully satisfy system requirements, DRAM because of its volatility and large power dissipation, and FLASH because of its slow programming speed and large block organization. PCM technology is a promising candidate to target the "universal memory" matching most of the properties of FLASH and DRAM. However, to realize the full potential of PCM two crucial memory characteristics have to be improved: programming current and switching speed.The new memory concept investigated in the project is based on engineered Chalcogenide SuperLattices (CSL) that should allow realizing the memory switching with a modification in the bonding nature instead of the energy expensive melting process, bringing about a significant reduction of both transition times and programming currents. Despite the convincing experimental evidence the physical mechanism is not yet understood.The project aims at exploiting the potential of CSL-PCM memory cells, starting from an atomistic understanding of switching in CSL materials through experiments and physical model development, leading to new insights for CSL engineering. Optimization of the CSL device will be achieved through the development of a test vehicle allowing the benchmark among different stacks, based on "universal memory" electrical performance targets. A large array, realized at 2X technology node, will be fabricated and integration issues will be addressed. Scalability to the 1X node will be also evaluated to demonstrate the capability to become a real "universal memory" also for the next generations of memory chips.At the end of the project a first "universal memory" chip at the state of the art technology node will be available with an expected direct impact on the solid state memory market.

Programme(s)

Thème(s)

Appel à propositions

FP7-ICT-2011-8
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Régime de financement

CP - Collaborative project (generic)

Coordonnées du coordinateur

Andrea Redaelli Dr.

Coordinateur

Numonyx Italy Srl
Contribution de l’UE
Aucune donnée
Adresse
VIA CAMILLO OLIVETTI 2
20864 AGRATE BRIANZA
Italie

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Type d’activité
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Contact administratif
Seminara Manuela (Dr.)
Liens
Coût total
Aucune donnée

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Dernière mise à jour: 14 Octobre 2014

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Permalink: https://cordis.europa.eu/project/id/317746/fr

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