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Contenido archivado el 2024-06-18

DEVELOPMENT OF ADVANCED GAN TECHNOLOGIES

Objetivo

According to the High-Level Experts Group (HLG) micro and nanoelectronics are essential for all goods and services which need intelligent control in all innovative sectors and are therefore identified as Key Enabling Technologies (KET). Gallium Nitride is an advanced semiconductor material at the heart of three strategic issues, advanced materials, photonics and micro/nanoelectronics. The deployment of these technologies is key for Europe to strengthen its manufacturing capacities while addressing societal challenges on energy and transportation.
The main goal of the AGATE project is to implement an industrial European source of engineered substrates and epitaxial structures for GaN electronic devices, and to validate the substrate performances on high performance GaN devices.

Ámbito científico (EuroSciVoc)

Programa(s)

Tema(s)

Convocatoria de propuestas

ENIAC-2012-2
Consulte otros proyectos de esta convocatoria

Régimen de financiación

JTI-CP-ENIAC - Joint Technology Initiatives - Collaborative Project (ENIAC)

Coordinador

SOITEC SA
Aportación de la UE
€ 5 602 480,00
Dirección
PARC TEC NO DES FONTAINES CHEMIN DE FRANQUES
38190 Bernin
Francia
Región
Auvergne-Rhône-Alpes Rhône-Alpes Isère
Tipo de actividad
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Enlaces
Coste total
Sin datos

Participantes (9)