Objective The goal of MIDAS is to strengthen the European knowledge base in the area of high-performance silicon microelectronics. The technical objective is to demonstrate the performance enhancement in bipolar transistors by using new materials such as silicon-germanium, new processing techniques such as low-temperature epitaxy, and selected deposition and new device concepts such as heterojunction bipolar transistors. The demonstration of the potential will be done by a combination of performance prediction based on device simulations using data derived from test structures, and the fabrication of bipolar transistors.A range of different technologies, such as molecular beam epitaxy (MBE), ultrahigh vacuum chemical vapour deposition (UHV-CVD) and plasma assisted chemical vapour deposition (CVD) are being used and compared in terms of material quality, growth sequence and time. Aspects of integration of epitaxial growth of silicon (Si) and silicon germanide (SiGe) by the different techniques, using selective and nonselective growth, are being investigated. The first operating transistors have been made. These are meant either to optimize the dopant and/or germanium profiles, or to optimize the device structure to obtain low parasitics. Excellent results in terms of high frequency performance have been obtained for deposited base transistors. In the modelling area, the missing material parameters, in particular for SiGe, have been identified, and the influence on calculated performance has been evaluated.Silicon multilayer technology will improve performance characteristics of bipolar devices in terms of speed, noise, linearity and power consumption. It will also create silicon heterojunction devices with additional degrees of freedom with respect to device design and optimisation as compared with homojunction devices. This additional degree of freedom can be used to improve the speed with transit frequencies up to the 100 GHz range, or to improve the analogue features at "moderate" transit frequencies of 20 to 50 GHz. The technical targets of the project are: simulated optimised devices Silicon bipolar homo-devices Propagation delay minimum <20 ps Minimum power delay product <10 fJ Effective emitter width <0.5 micron Transit frequency 25-60 GHz Silicon bipolar hetero-devices Propagation delay minimum <15 ps Minimum power delay product <20 fJ Noise figure at 2 GHz <1.5 dB (using standard transistor) Effective emitter width <0.5 micron Transit frequency 50-100 GHz Maximum oscillation frequency 50-100 GHz Linearity: early voltage >20 V fabricated non-optimised devices Silicon bipolar homo-devices Transit frequency > 25 GHz Base pinch resistance <25 kW Noise figure at 2 GHz <2 dB Silicon bipolar hetero-devices Transit frequency 25-50 GHz Base pinch resistance 10 kW Noise figure at 2 GHz <1.5 dB Early voltage >20 V Fields of science natural sciencesphysical scienceselectromagnetism and electronicsmicroelectronicsnatural scienceschemical sciencesinorganic chemistrymetalloids Programme(s) FP3-ESPRIT 3 - Specific research and technological development programme (EEC) in the field of information technologies, 1990-1994 Topic(s) Data not available Call for proposal Data not available Funding Scheme Data not available Coordinator NEDERLANDSE PHILIPS BEDRIJVEN BV Address Prof. holstlaan, 4 5656 AA Eindhoven Netherlands See on map EU contribution € 0,00 Participants (8) Sort alphabetically Sort by EU Contribution Expand all Collapse all DAIMLER-BENZ AG Germany EU contribution € 0,00 Address Plieningerstraße 150 70567 Stuttgart See on map Defence Research Agency (DRA) United Kingdom EU contribution € 0,00 Address St andrews road WR14 3PS Malvern See on map GEC Plessey Semiconductors plc United Kingdom EU contribution € 0,00 Address Cheney manor SN2 2QW Swindon See on map Interuniversitair Mikroelektronica Centrum Belgium EU contribution € 0,00 Address Kapeldreef 75 3030 Heverlee See on map LINKOEPING UNIVERSITY Sweden EU contribution € 0,00 Address Valla 83 Linkoeping See on map Siemens AG Germany EU contribution € 0,00 Address Otto-hahn-ring 6 81739 München See on map TECHNISCHE UNIVERSITAT WIEN-IAIS Austria EU contribution € 0,00 Address Paniglglasse, 16 1040 Wien See on map Telefunken Microelectronic GmbH Germany EU contribution € 0,00 Address Theresienstraße 2 74072 Heilbronn See on map