Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics

Informations projet

PROMIS

N° de convention de subvention: 641899

DOI

10.3030/641899

Projet clôturé

Date de signature de la CE 16 Decembre 2014

Date de début 1 Janvier 2015

Date de fin 31 Decembre 2018

Financé au titre de

• EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions

Coût total

€ 3 947 452,55

Contribution de l’UE

€ 3 947 452,55

Coordonné par

UNIVERSITY OF LANCASTER
United Kingdom

CORDIS fournit des liens vers les livrables publics et les publications des projets HORIZON.

Les liens vers les livrables et les publications des projets du 7e PC, ainsi que les liens vers certains types de résultats spécifiques tels que les jeux de données et les logiciels, sont récupérés dynamiquement sur OpenAIRE .

Livrables

Documents, reports (16)

Prototype tandem solar cells demonstrated and characterised
Metamorphic III-Sb heterostructures with InP lattice-parameter

Metamorphic IIISb heterostructures with InP latticeparameter

Final report
Cells containing III-Sb/Si tandem heterostructures
3rd Training report

3rd training report

Theoretical analysis of design and optimum material requirements for III-V(N) devices in WP1, 3 and 4.

Theoretical analysis of design and optimum material requirements for IIIVN devices in WP1 3 and 4

1st Training report

1st training report

2nd Training report

2nd training report

(InGa)(AsN)/GaAs quantum wells emitting at 1.31 and 1.55 µm
Optimal hydrogenation conditions for full H passivation determined
Nanoscale LEDs fabricated by spatially controlled H-dopant dissociation
All ESRs completed 1st secondment
Progress report

Progress report worked out and delivered to REA

Solar cells containing GaAsN/GaSb QD stacks exhibiting intermediate band behaviour
Single layer GaSbN QD grown and characterised
Band structure parameters established for relevant III-V(N) heterostructures

Band structure parameters established for relevant IIIVN heterostructures

Websites, patent fillings, videos etc. (3)

Seminars, exhibitions & webinars
Public engagement

Press releases, open days, public lectures, YouTube/podcasts

Website launch

Other (4)

Supervisory Board of the Network

Supervisory Board in place and ready to take decisions

Summer school
All doctoral degrees awarded
Conference

Publications

Peer reviewed articles (29)

Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode

Auteurs: D. M. Di Paola, M. Kesaria, O. Makarovsky, A. Velichko, L. Eaves, N. Mori, A. Krier, A. Patanè
Publié dans: Scientific Reports, Numéro 6, 2016, Page(s) 32039, ISSN 2045-2322
Éditeur: Nature Publishing Group
DOI: 10.1038/srep32039

Quantum Random Number Generation Using a Quanta Image Sensor

Auteurs: Emna Amri, Yacine Felk, Damien Stucki, Jiaju Ma, Eric Fossum
Publié dans: Sensors, Numéro 16/7, 2016, Page(s) 1002, ISSN 1424-8220
Éditeur: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/s16071002

All-semiconductor plasmonic gratings for biosensing applications in the mid-infrared spectral range

Auteurs: Franziska B. Barho, Fernando Gonzalez-Posada, Maria-José Milla-Rodrigo, Mario Bomers, Laurent Cerutti, Thierry Taliercio
Publié dans: Optics Express, Numéro 24/14, 2016, Page(s) 16175, ISSN 1094-4087
Éditeur: Optical Society of America
DOI: 10.1364/OE.24.016175

Localized surface plasmon resonance frequency tuning in highly doped InAsSb/GaSb one-dimensional nanostructures

Auteurs: M J Milla, F Barho, F González-Posada, L Cerutti, M Bomers, J-B Rodriguez, E Tournié, T Taliercio
Publié dans: Nanotechnology, Numéro 27/42, 2016, Page(s) 425201, ISSN 0957-4484
Éditeur: Institute of Physics Publishing
DOI: 10.1088/0957-4484/27/42/425201

Highly-mismatched InAs/InSe heterojunction diodes

Auteurs: A. V. Velichko, Z. R. Kudrynskyi, D. M. Di Paola, O. Makarovsky, M. Kesaria, A. Krier, I. C. Sandall, C. H. Tan, Z. D. Kovalyuk, A. Patanè
Publié dans: Applied Physics Letters, Numéro 109/18, 2016, Page(s) 182115, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/1.4967381

Temporal jitter in free-running InGaAs/InP single-photon avalanche detectors

Auteurs: Emna Amri, Gianluca Boso, Boris Korzh, Hugo Zbinden
Publié dans: Optics Letters, Numéro 41/24, 2016, Page(s) 5728, ISSN 0146-9592
Éditeur: Optical Society of America
DOI: 10.1364/OL.41.005728

Investigation of temperature and temporal stability of AlGaAsSb avalanche photodiodes

Auteurs: Salman Abdullah, Chee Hing Tan, Xinxin Zhou, Shiyong Zhang, Lucas Pinel, Jo Shien Ng
Publié dans: Optics Express, Numéro 25/26, 2017, Page(s) 33610, ISSN 1094-4087
Éditeur: Optical Society of America
DOI: 10.1364/oe.25.033610

Pedestal formation of all-semiconductor gratings through GaSb oxidation for mid-IR plasmonics

Auteurs: Mario Bomers, Franziska Barho, María José Milla-Rodrigo, Laurent Cerutti, Richard Arinero, Fernando Gonzalez-Posada Flores, Eric Tournié, Thierry Taliercio
Publié dans: Journal of Physics D: Applied Physics, Numéro 51/1, 2018, Page(s) 015104, ISSN 0022-3727
Éditeur: Institute of Physics Publishing
DOI: 10.1088/1361-6463/aa98af

Highly doped semiconductor plasmonic nanoantenna arrays for polarization selective broadband surface-enhanced infrared absorption spectroscopy of vanillin

Auteurs: Franziska B. Barho, Fernando Gonzalez-Posada, Maria-Jose Milla, Mario Bomers, Laurent Cerutti, Eric Tournié, Thierry Taliercio
Publié dans: Nanophotonics, Numéro 7/2, 2017, ISSN 2192-8614
Éditeur: De Gruyter
DOI: 10.1515/nanoph-2017-0052

Phosphonate monolayers on InAsSb and GaSb surfaces for mid-IR plasmonics

Auteurs: Mario Bomers, Aude Mezy, Laurent Cerutti, Franziska Barho, Fernando Gonzalez-Posada Flores, Eric Tournié, Thierry Taliercio
Publié dans: Applied Surface Science, Numéro 451, 2018, Page(s) 241-249, ISSN 0169-4332
Éditeur: Elsevier BV
DOI: 10.1016/j.apsusc.2018.04.208

Tunable plasmonic resonance of gallium nanoparticles by thermal oxidation at low temperatures

Auteurs: S Catalán-Gómez, A Redondo-Cubero, F J Palomares, F Nucciarelli, J L Pau
Publié dans: Nanotechnology, Numéro 28/40, 2017, Page(s) 405705, ISSN 0957-4484
Éditeur: Institute of Physics Publishing
DOI: 10.1088/1361-6528/aa8505

Optical Detection and Spatial Modulation of Mid-Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor

Auteurs: Davide Maria Di Paola, Anton V. Velichko, Mario Bomers, Nilanthy Balakrishnan, Oleg Makarovsky, Mario Capizzi, Laurent Cerutti, Alexei N. Baranov, Manoj Kesaria, Anthony Krier, Thierry Taliercio, Amalia Patanè
Publié dans: Advanced Optical Materials, Numéro 6/3, 2018, Page(s) 1700492, ISSN 2195-1071
Éditeur: Wiley
DOI: 10.1002/adom.201700492

Surface-enhanced infrared absorption with Si-doped InAsSb/GaSb nano-antennas

Auteurs: M. J. Milla, F. Barho, F. González-Posada, L. Cerutti, B. Charlot, M. Bomers, F. Neubrech, E. Tournie, T. Taliercio
Publié dans: Optics Express, Numéro 25/22, 2017, Page(s) 26651, ISSN 1094-4087
Éditeur: Optical Society of America
DOI: 10.1364/oe.25.026651

Quantum cascade lasers grown on silicon

Auteurs: Hoang Nguyen-Van, Alexei N. Baranov, Zeineb Loghmari, Laurent Cerutti, Jean-Baptiste Rodriguez, Julie Tournet, Gregoire Narcy, Guilhem Boissier, Gilles Patriarche, Michael Bahriz, Eric Tournié, Roland Teissier
Publié dans: Scientific Reports, Numéro 8/1, 2018, ISSN 2045-2322
Éditeur: Nature Publishing Group
DOI: 10.1038/s41598-018-24723-2

High Ultraviolet Absorption in Colloidal Gallium Nanoparticles Prepared from Thermal Evaporation

Auteurs: Flavio Nucciarelli, Iria Bravo, Sergio Catalan-Gomez, Luis Vázquez, Encarnación Lorenzo, Jose Pau
Publié dans: Nanomaterials, Numéro 7/7, 2017, Page(s) 172, ISSN 2079-4991
Éditeur: MDPI
DOI: 10.3390/nano7070172

Effects of carrier injection profile on low noise thin Al 085 Ga 015 As 056 Sb 044 avalanche photodiodes

Auteurs: Lucas L.G. Pinel, Simon J. Dimler, Xinxin Zhou, Salman Abdullah, Shiyong Zhang, Chee Hing Tan, Jo Shien Ng
Publié dans: Optics Express, Numéro 26/3, 2018, Page(s) 3568, ISSN 1094-4087
Éditeur: Optical Society of America
DOI: 10.1364/oe.26.003568

InP:S/AlInAs:C Tunnel Junction Grown by MOVPE for Photovoltaic Applications

Auteurs: Stefano Soresi, Gwénaëlle Hamon, Alexandre Larrue, José Alvarez, Mauricio P. Pires, Jean Decobert
Publié dans: physica status solidi (a), Numéro 215/8, 2018, Page(s) 1700427, ISSN 1862-6300
Éditeur: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.201700427

Growth and characterization of AlInAsSb layers lattice-matched to GaSb

Auteurs: J. Tournet, Y. Rouillard, E. Tournié
Publié dans: Journal of Crystal Growth, Numéro 477, 2017, Page(s) 72-76, ISSN 0022-0248
Éditeur: Elsevier BV
DOI: 10.1016/j.jcrysgro.2017.04.001

Size-selective breaking of the core–shell structure of gallium nanoparticles

Auteurs: S Catalán-Gómez, A Redondo-Cubero, F J Palomares, L Vázquez, E Nogales, F Nucciarelli, B Méndez, N Gordillo, J L Pau
Publié dans: Nanotechnology, Numéro 29/35, 2018, Page(s) 355707, ISSN 0957-4484
Éditeur: Institute of Physics Publishing
DOI: 10.1088/1361-6528/aacb91

Site-Controlled Single-Photon Emitters Fabricated by Near-Field Illumination

Auteurs: Francesco Biccari, Alice Boschetti, Giorgio Pettinari, Federico La China, Massimo Gurioli, Francesca Intonti, Anna Vinattieri, MayankShekhar Sharma, Mario Capizzi, Annamaria Gerardino, Luca Businaro, Mark Hopkinson, Antonio Polimeni, Marco Felici
Publié dans: Advanced Materials, Numéro 30/21, 2018, Page(s) 1705450, ISSN 0935-9648
Éditeur: United Nations Industrial Developement Organization
DOI: 10.1002/adma.201705450

Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in water

Auteurs: Mario Bomers, Davide Maria Di Paola, Laurent Cerutti, Thierry Michel, Richard Arinero, Eric Tournié, Amalia Patanè, Thierry Taliercio
Publié dans: Semiconductor Science and Technology, Numéro 33/9, 2018, Page(s) 095009, ISSN 0268-1242
Éditeur: Institute of Physics Publishing
DOI: 10.1088/1361-6641/aad4bf

Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared

Auteurs: J.A. Keen, E. Repiso, Q. Lu, M. Kesaria, A.R.J. Marshall, A. Krier
Publié dans: Infrared Physics & Technology, Numéro 93, 2018, Page(s) 375-380, ISSN 1350-4495
Éditeur: Elsevier BV
DOI: 10.1016/j.infrared.2018.08.001

Modified qHAADF method for atomic column-by-column compositional quantification of semiconductor heterostructures

Auteurs: Atif A. Khan, M. Herrera, J. Pizarro, P. L. Galindo, P. J. Carrington, H. Fujita, A. Krier, S. I. Molina
Publié dans: Journal of Materials Science, Numéro 54/4, 2019, Page(s) 3230-3241, ISSN 0022-2461
Éditeur: Kluwer Academic Publishers
DOI: 10.1007/s10853-018-3073-y

Open circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure

Auteurs: D. Montesdeoca, P.J. Carrington, I.P. Marko, M.C. Wagener, S.J. Sweeney, A. Krier
Publié dans: Solar Energy Materials and Solar Cells, Numéro 187, 2018, Page(s) 227-232, ISSN 0927-0248
Éditeur: Elsevier BV
DOI: 10.1016/j.solmat.2018.07.028

1 eV Ga(NAsSb) grown by MOVPE using di- tertiary -butyl-arsano-amine (DTBAA)

Auteurs: E. Sterzer, O. Maßmeyer, L. Nattermann, K. Jandieri, S. Gupta, A. Beyer, B. Ringler, C. von Hänisch, W. Stolz, K. Volz
Publié dans: AIP Advances, Numéro 8/5, 2018, Page(s) 055329, ISSN 2158-3226
Éditeur: American Institute of Physics Inc.
DOI: 10.1063/1.5034083

GaSb-based solar cells for multi-junction integration on Si substrates

Auteurs: J. Tournet, S. Parola, A. Vauthelin, D. Montesdeoca Cardenes, S. Soresi, F. Martinez, Q. Lu, Y. Cuminal, P.J. Carrington, J. Décobert, A. Krier, Y. Rouillard, E. Tournié
Publié dans: Solar Energy Materials and Solar Cells, Numéro 191, 2019, Page(s) 444-450, ISSN 0927-0248
Éditeur: Elsevier BV
DOI: 10.1016/j.solmat.2018.11.035

Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells

Auteurs: Magnus C. Wagener, Denise Montesdeoca, Qi Lu, Andrew R.J. Marshall, Anthony Krier, J.R. Botha, Peter J. Carrington
Publié dans: Solar Energy Materials and Solar Cells, Numéro 189, 2019, Page(s) 233-238, ISSN 0927-0248
Éditeur: Elsevier BV
DOI: 10.1016/j.solmat.2018.07.030

Thin $\text{Al}_{\mathbf{1{-}}{\boldsymbol x}}$ Ga$_{\boldsymbol{x}}$As $_{\mathbf{0.56}}$Sb $_{\mathbf{0.44}}$ Diodes With Low Excess Noise

Auteurs: Xinxin Zhou, Lucas L. G. Pinel, Simon J. Dimler, Shiyong Zhang, Jo Shien Ng, Chee Hing Tan
Publié dans: IEEE Journal of Selected Topics in Quantum Electronics, Numéro 24/2, 2018, Page(s) 1-5, ISSN 1077-260X
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/jstqe.2017.2725441

Thin Al 1− x Ga x As 0.56 Sb 0.44 diodes with extremely weak temperature dependence of avalanche breakdown

Auteurs: Xinxin Zhou, Chee Hing Tan, Shiyong Zhang, Manuel Moreno, Shiyu Xie, Salman Abdullah, Jo Shien Ng
Publié dans: Royal Society Open Science, Numéro 4/5, 2017, Page(s) 170071, ISSN 2054-5703
Éditeur: The Royal Society
DOI: 10.1098/rsos.170071

Conference proceedings (15)

Highly doped InAsSb plasmonic arrays for mid-infrared biosensing

Auteurs: F. Barho, F. Gonzalez-Posada, M.L Milla, M. Bomers, L. Cerutti, T. Taliercio
Publié dans: 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), 2016, Page(s) 1-2, ISBN 978-1-5090-4352-1
Éditeur: IEEE
DOI: 10.1109/nmdc.2016.7777128

Free-running InGaAs/InP single-photon avalanche diodes with 50 ps timing jitter (Conference Presentation)

Auteurs: Gianluca Boso, Emna Amri, Boris Korzh, Hugo Zbinden
Publié dans: Advanced Photon Counting Techniques XI, 2017, Page(s) 102120F
Éditeur: SPIE
DOI: 10.1117/12.2264698

Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates

Auteurs: P. J. Carrington, E. Delli, P. D. Hodgson, E. Repiso, A. Craig, A. Marshall, A. Krier
Publié dans: 2017 IEEE Photonics Conference (IPC), 2017, Page(s) 307-308, ISBN 978-1-5090-6578-3
Éditeur: IEEE
DOI: 10.1109/ipcon.2017.8116118

The role of the oxide shell in the chemical functionalization of plasmonic gallium nanoparticles

Auteurs: S. Catalán-Gómez, M. Briones, A. Redondo-Cubero, F. J. Palomares, F. Nucciarelli, E. Lorenzo, J. L. Pau
Publié dans: Optical Sensors 2017, 2017, Page(s) 102310D
Éditeur: SPIE
DOI: 10.1117/12.2265665

Optical spectroscopy of p-GaAs nanopillars on Si for monolithic integrated light sources

Auteurs: J. S. D. Morales, S. Gandan, D. Ren, Tomasz J. Ochalski, Diana L. Huffaker
Publié dans: Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV, 2017, Page(s) 1011409
Éditeur: SPIE
DOI: 10.1117/12.2252507

Gallium nanoparticles colloids synthesis for UV bio-optical sensors

Auteurs: Flavio Nucciarelli, Iria Bravo, Luis Vázquez, Encarnación Lorenzo, Jose Luis Pau
Publié dans: Optical Sensors 2017, 2017, Page(s) 1023127
Éditeur: SPIE
DOI: 10.1117/12.2265883

Plasmonic bio-sensing based on highly doped semiconductors

Auteurs: Thierry Taliercio, María José Milla-Rodrigo, Fernando Gonzalez Posada Flores, Mario Bomers, Franziska B. Barho, Eric Tournié, Laurent Cerutti
Publié dans: Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications 2017, 2017, Page(s) 26, ISBN 9781-510611641
Éditeur: SPIE
DOI: 10.1117/12.2274303

InSb-based quantum dot nanostructures for mid-infrared photonic devices

Auteurs: P. J. Carrington, E. Repiso, Q. Lu, H. Fujita, A. R. J. Marshall, Q. Zhuang, A. Krier
Publié dans: Nanophotonic Materials XIII, 2016, Page(s) 99190C
Éditeur: SPIE
DOI: 10.1117/12.2236869

Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells

Auteurs: P. J. Carrington, D. Montesdeoca, H. Fujita, J. James, M. C. Wagener, J. R. Botha, A. R. J. Marshall, A. Krier
Publié dans: Next Generation Technologies for Solar Energy Conversion VII, 2016, Page(s) 993708
Éditeur: SPIE
DOI: 10.1117/12.2236957

Design of 3.3 and 4.2 μm mid-infrared metamorphic quantum well light-emitting diodes

Auteurs: Reza Arkani, Christopher A. Broderick, Eoin P. OrReilly
Publié dans: 2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2018, Page(s) 119-120, ISBN 978-1-5386-5599-3
Éditeur: IEEE
DOI: 10.1109/nusod.2018.8570223

AlInAsSb for GaSb-based multi-junction solar cells

Auteurs: Julie Tournet, Eric Tournié, Yves Rouillard
Publié dans: Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VII, 2018, Page(s) 10, ISBN 9781-510615403
Éditeur: SPIE
DOI: 10.1117/12.2289791

Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes with high immunity to temperature fluctuation

Auteurs: S. Zhang, Salman Abdullah, Chee Hing Tan, Jo Shien Ng
Publié dans: Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz, 2018, Page(s) 22, ISBN 9781-510620308
Éditeur: SPIE
DOI: 10.1117/12.2326847

Computational design of metamorphic In(N)AsSb mid-infrared light-emitting diodes

Auteurs: Reza Arkani, Christopher A. Broderick, Eoin P. O'Reilly
Publié dans: 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), 2018, Page(s) 1-4, ISBN 978-1-5386-5336-4
Éditeur: IEEE
DOI: 10.1109/nano.2018.8626250

Redshift of lasing modes in time-resolved spectra for GaAs-AlGaAs core-shell nanowires lasers on silicon (Conference Presentation)

Auteurs: Juan Salvador Dominguez Morales, Thomas Stettner, Shumithira Gandan, David P. Williams, Gregor Koblmueller, Jonathan J. Finley, Tomasz J. Ochalski
Publié dans: Silicon Photonics XIII, 2018, Page(s) 38, ISBN 9781-510615601
Éditeur: SPIE
DOI: 10.1117/12.2286315

Single-mode lasing in InGaAs nanopillars on SOI (Conference Presentation)

Auteurs: Juan Salvador Dominguez Morales, Hyunseok Kim, Shumithira Gandan, David P. Williams, Wook-Jae Lee, Diana L. Huffaker, Tomasz J. Ochalski
Publié dans: Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV, 2018, Page(s) 3, ISBN 9781-510615724
Éditeur: SPIE
DOI: 10.1117/12.2286320