Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics

Rezultaty

Prototype tandem solar cells demonstrated and characterised
Metamorphic III-Sb heterostructures with InP lattice-parameter

Metamorphic IIISb heterostructures with InP latticeparameter

Final report
Cells containing III-Sb/Si tandem heterostructures
3rd Training report

3rd training report

Theoretical analysis of design and optimum material requirements for III-V(N) devices in WP1, 3 and 4.

Theoretical analysis of design and optimum material requirements for IIIVN devices in WP1 3 and 4

1st Training report

1st training report

2nd Training report

2nd training report

(InGa)(AsN)/GaAs quantum wells emitting at 1.31 and 1.55 µm
Optimal hydrogenation conditions for full H passivation determined
Nanoscale LEDs fabricated by spatially controlled H-dopant dissociation
All ESRs completed 1st secondment
Progress report

Progress report worked out and delivered to REA

Solar cells containing GaAsN/GaSb QD stacks exhibiting intermediate band behaviour
Single layer GaSbN QD grown and characterised
Band structure parameters established for relevant III-V(N) heterostructures

Band structure parameters established for relevant IIIVN heterostructures

Seminars, exhibitions & webinars
Public engagement

Press releases, open days, public lectures, YouTube/podcasts

Website launch

Supervisory Board of the Network

Supervisory Board in place and ready to take decisions

Summer school
All doctoral degrees awarded
Conference

Publikacje

Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode

Autorzy: D. M. Di Paola, M. Kesaria, O. Makarovsky, A. Velichko, L. Eaves, N. Mori, A. Krier, A. Patanè
Opublikowane w: Scientific Reports, Numer 6, 2016, Strona(/y) 32039, ISSN 2045-2322
Wydawca: Nature Publishing Group
DOI: 10.1038/srep32039

Quantum Random Number Generation Using a Quanta Image Sensor

Autorzy: Emna Amri, Yacine Felk, Damien Stucki, Jiaju Ma, Eric Fossum
Opublikowane w: Sensors, Numer 16/7, 2016, Strona(/y) 1002, ISSN 1424-8220
Wydawca: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/s16071002

All-semiconductor plasmonic gratings for biosensing applications in the mid-infrared spectral range

Autorzy: Franziska B. Barho, Fernando Gonzalez-Posada, Maria-José Milla-Rodrigo, Mario Bomers, Laurent Cerutti, Thierry Taliercio
Opublikowane w: Optics Express, Numer 24/14, 2016, Strona(/y) 16175, ISSN 1094-4087
Wydawca: Optical Society of America
DOI: 10.1364/OE.24.016175

Localized surface plasmon resonance frequency tuning in highly doped InAsSb/GaSb one-dimensional nanostructures

Autorzy: M J Milla, F Barho, F González-Posada, L Cerutti, M Bomers, J-B Rodriguez, E Tournié, T Taliercio
Opublikowane w: Nanotechnology, Numer 27/42, 2016, Strona(/y) 425201, ISSN 0957-4484
Wydawca: Institute of Physics Publishing
DOI: 10.1088/0957-4484/27/42/425201

Highly-mismatched InAs/InSe heterojunction diodes

Autorzy: A. V. Velichko, Z. R. Kudrynskyi, D. M. Di Paola, O. Makarovsky, M. Kesaria, A. Krier, I. C. Sandall, C. H. Tan, Z. D. Kovalyuk, A. Patanè
Opublikowane w: Applied Physics Letters, Numer 109/18, 2016, Strona(/y) 182115, ISSN 0003-6951
Wydawca: American Institute of Physics
DOI: 10.1063/1.4967381

Temporal jitter in free-running InGaAs/InP single-photon avalanche detectors

Autorzy: Emna Amri, Gianluca Boso, Boris Korzh, Hugo Zbinden
Opublikowane w: Optics Letters, Numer 41/24, 2016, Strona(/y) 5728, ISSN 0146-9592
Wydawca: Optical Society of America
DOI: 10.1364/OL.41.005728

Investigation of temperature and temporal stability of AlGaAsSb avalanche photodiodes

Autorzy: Salman Abdullah, Chee Hing Tan, Xinxin Zhou, Shiyong Zhang, Lucas Pinel, Jo Shien Ng
Opublikowane w: Optics Express, Numer 25/26, 2017, Strona(/y) 33610, ISSN 1094-4087
Wydawca: Optical Society of America
DOI: 10.1364/oe.25.033610

Pedestal formation of all-semiconductor gratings through GaSb oxidation for mid-IR plasmonics

Autorzy: Mario Bomers, Franziska Barho, María José Milla-Rodrigo, Laurent Cerutti, Richard Arinero, Fernando Gonzalez-Posada Flores, Eric Tournié, Thierry Taliercio
Opublikowane w: Journal of Physics D: Applied Physics, Numer 51/1, 2018, Strona(/y) 015104, ISSN 0022-3727
Wydawca: Institute of Physics Publishing
DOI: 10.1088/1361-6463/aa98af

Highly doped semiconductor plasmonic nanoantenna arrays for polarization selective broadband surface-enhanced infrared absorption spectroscopy of vanillin

Autorzy: Franziska B. Barho, Fernando Gonzalez-Posada, Maria-Jose Milla, Mario Bomers, Laurent Cerutti, Eric Tournié, Thierry Taliercio
Opublikowane w: Nanophotonics, Numer 7/2, 2017, ISSN 2192-8614
Wydawca: De Gruyter
DOI: 10.1515/nanoph-2017-0052

Phosphonate monolayers on InAsSb and GaSb surfaces for mid-IR plasmonics

Autorzy: Mario Bomers, Aude Mezy, Laurent Cerutti, Franziska Barho, Fernando Gonzalez-Posada Flores, Eric Tournié, Thierry Taliercio
Opublikowane w: Applied Surface Science, Numer 451, 2018, Strona(/y) 241-249, ISSN 0169-4332
Wydawca: Elsevier BV
DOI: 10.1016/j.apsusc.2018.04.208

Tunable plasmonic resonance of gallium nanoparticles by thermal oxidation at low temperatures

Autorzy: S Catalán-Gómez, A Redondo-Cubero, F J Palomares, F Nucciarelli, J L Pau
Opublikowane w: Nanotechnology, Numer 28/40, 2017, Strona(/y) 405705, ISSN 0957-4484
Wydawca: Institute of Physics Publishing
DOI: 10.1088/1361-6528/aa8505

Optical Detection and Spatial Modulation of Mid-Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor

Autorzy: Davide Maria Di Paola, Anton V. Velichko, Mario Bomers, Nilanthy Balakrishnan, Oleg Makarovsky, Mario Capizzi, Laurent Cerutti, Alexei N. Baranov, Manoj Kesaria, Anthony Krier, Thierry Taliercio, Amalia Patanè
Opublikowane w: Advanced Optical Materials, Numer 6/3, 2018, Strona(/y) 1700492, ISSN 2195-1071
Wydawca: Wiley
DOI: 10.1002/adom.201700492

Surface-enhanced infrared absorption with Si-doped InAsSb/GaSb nano-antennas

Autorzy: M. J. Milla, F. Barho, F. González-Posada, L. Cerutti, B. Charlot, M. Bomers, F. Neubrech, E. Tournie, T. Taliercio
Opublikowane w: Optics Express, Numer 25/22, 2017, Strona(/y) 26651, ISSN 1094-4087
Wydawca: Optical Society of America
DOI: 10.1364/oe.25.026651

Quantum cascade lasers grown on silicon

Autorzy: Hoang Nguyen-Van, Alexei N. Baranov, Zeineb Loghmari, Laurent Cerutti, Jean-Baptiste Rodriguez, Julie Tournet, Gregoire Narcy, Guilhem Boissier, Gilles Patriarche, Michael Bahriz, Eric Tournié, Roland Teissier
Opublikowane w: Scientific Reports, Numer 8/1, 2018, ISSN 2045-2322
Wydawca: Nature Publishing Group
DOI: 10.1038/s41598-018-24723-2

High Ultraviolet Absorption in Colloidal Gallium Nanoparticles Prepared from Thermal Evaporation

Autorzy: Flavio Nucciarelli, Iria Bravo, Sergio Catalan-Gomez, Luis Vázquez, Encarnación Lorenzo, Jose Pau
Opublikowane w: Nanomaterials, Numer 7/7, 2017, Strona(/y) 172, ISSN 2079-4991
Wydawca: MDPI
DOI: 10.3390/nano7070172

Effects of carrier injection profile on low noise thin Al 085 Ga 015 As 056 Sb 044 avalanche photodiodes

Autorzy: Lucas L.G. Pinel, Simon J. Dimler, Xinxin Zhou, Salman Abdullah, Shiyong Zhang, Chee Hing Tan, Jo Shien Ng
Opublikowane w: Optics Express, Numer 26/3, 2018, Strona(/y) 3568, ISSN 1094-4087
Wydawca: Optical Society of America
DOI: 10.1364/oe.26.003568

InP:S/AlInAs:C Tunnel Junction Grown by MOVPE for Photovoltaic Applications

Autorzy: Stefano Soresi, Gwénaëlle Hamon, Alexandre Larrue, José Alvarez, Mauricio P. Pires, Jean Decobert
Opublikowane w: physica status solidi (a), Numer 215/8, 2018, Strona(/y) 1700427, ISSN 1862-6300
Wydawca: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.201700427

Growth and characterization of AlInAsSb layers lattice-matched to GaSb

Autorzy: J. Tournet, Y. Rouillard, E. Tournié
Opublikowane w: Journal of Crystal Growth, Numer 477, 2017, Strona(/y) 72-76, ISSN 0022-0248
Wydawca: Elsevier BV
DOI: 10.1016/j.jcrysgro.2017.04.001

Size-selective breaking of the core–shell structure of gallium nanoparticles

Autorzy: S Catalán-Gómez, A Redondo-Cubero, F J Palomares, L Vázquez, E Nogales, F Nucciarelli, B Méndez, N Gordillo, J L Pau
Opublikowane w: Nanotechnology, Numer 29/35, 2018, Strona(/y) 355707, ISSN 0957-4484
Wydawca: Institute of Physics Publishing
DOI: 10.1088/1361-6528/aacb91

Site-Controlled Single-Photon Emitters Fabricated by Near-Field Illumination

Autorzy: Francesco Biccari, Alice Boschetti, Giorgio Pettinari, Federico La China, Massimo Gurioli, Francesca Intonti, Anna Vinattieri, MayankShekhar Sharma, Mario Capizzi, Annamaria Gerardino, Luca Businaro, Mark Hopkinson, Antonio Polimeni, Marco Felici
Opublikowane w: Advanced Materials, Numer 30/21, 2018, Strona(/y) 1705450, ISSN 0935-9648
Wydawca: United Nations Industrial Developement Organization
DOI: 10.1002/adma.201705450

Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in water

Autorzy: Mario Bomers, Davide Maria Di Paola, Laurent Cerutti, Thierry Michel, Richard Arinero, Eric Tournié, Amalia Patanè, Thierry Taliercio
Opublikowane w: Semiconductor Science and Technology, Numer 33/9, 2018, Strona(/y) 095009, ISSN 0268-1242
Wydawca: Institute of Physics Publishing
DOI: 10.1088/1361-6641/aad4bf

Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared

Autorzy: J.A. Keen, E. Repiso, Q. Lu, M. Kesaria, A.R.J. Marshall, A. Krier
Opublikowane w: Infrared Physics & Technology, Numer 93, 2018, Strona(/y) 375-380, ISSN 1350-4495
Wydawca: Elsevier BV
DOI: 10.1016/j.infrared.2018.08.001

Modified qHAADF method for atomic column-by-column compositional quantification of semiconductor heterostructures

Autorzy: Atif A. Khan, M. Herrera, J. Pizarro, P. L. Galindo, P. J. Carrington, H. Fujita, A. Krier, S. I. Molina
Opublikowane w: Journal of Materials Science, Numer 54/4, 2019, Strona(/y) 3230-3241, ISSN 0022-2461
Wydawca: Kluwer Academic Publishers
DOI: 10.1007/s10853-018-3073-y

Open circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure

Autorzy: D. Montesdeoca, P.J. Carrington, I.P. Marko, M.C. Wagener, S.J. Sweeney, A. Krier
Opublikowane w: Solar Energy Materials and Solar Cells, Numer 187, 2018, Strona(/y) 227-232, ISSN 0927-0248
Wydawca: Elsevier BV
DOI: 10.1016/j.solmat.2018.07.028

1 eV Ga(NAsSb) grown by MOVPE using di- tertiary -butyl-arsano-amine (DTBAA)

Autorzy: E. Sterzer, O. Maßmeyer, L. Nattermann, K. Jandieri, S. Gupta, A. Beyer, B. Ringler, C. von Hänisch, W. Stolz, K. Volz
Opublikowane w: AIP Advances, Numer 8/5, 2018, Strona(/y) 055329, ISSN 2158-3226
Wydawca: American Institute of Physics Inc.
DOI: 10.1063/1.5034083

GaSb-based solar cells for multi-junction integration on Si substrates

Autorzy: J. Tournet, S. Parola, A. Vauthelin, D. Montesdeoca Cardenes, S. Soresi, F. Martinez, Q. Lu, Y. Cuminal, P.J. Carrington, J. Décobert, A. Krier, Y. Rouillard, E. Tournié
Opublikowane w: Solar Energy Materials and Solar Cells, Numer 191, 2019, Strona(/y) 444-450, ISSN 0927-0248
Wydawca: Elsevier BV
DOI: 10.1016/j.solmat.2018.11.035

Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells

Autorzy: Magnus C. Wagener, Denise Montesdeoca, Qi Lu, Andrew R.J. Marshall, Anthony Krier, J.R. Botha, Peter J. Carrington
Opublikowane w: Solar Energy Materials and Solar Cells, Numer 189, 2019, Strona(/y) 233-238, ISSN 0927-0248
Wydawca: Elsevier BV
DOI: 10.1016/j.solmat.2018.07.030

Thin $\text{Al}_{\mathbf{1{-}}{\boldsymbol x}}$ Ga$_{\boldsymbol{x}}$As $_{\mathbf{0.56}}$Sb $_{\mathbf{0.44}}$ Diodes With Low Excess Noise

Autorzy: Xinxin Zhou, Lucas L. G. Pinel, Simon J. Dimler, Shiyong Zhang, Jo Shien Ng, Chee Hing Tan
Opublikowane w: IEEE Journal of Selected Topics in Quantum Electronics, Numer 24/2, 2018, Strona(/y) 1-5, ISSN 1077-260X
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/jstqe.2017.2725441

Thin Al 1− x Ga x As 0.56 Sb 0.44 diodes with extremely weak temperature dependence of avalanche breakdown

Autorzy: Xinxin Zhou, Chee Hing Tan, Shiyong Zhang, Manuel Moreno, Shiyu Xie, Salman Abdullah, Jo Shien Ng
Opublikowane w: Royal Society Open Science, Numer 4/5, 2017, Strona(/y) 170071, ISSN 2054-5703
Wydawca: The Royal Society
DOI: 10.1098/rsos.170071

Highly doped InAsSb plasmonic arrays for mid-infrared biosensing

Autorzy: F. Barho, F. Gonzalez-Posada, M.L Milla, M. Bomers, L. Cerutti, T. Taliercio
Opublikowane w: 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), 2016, Strona(/y) 1-2, ISBN 978-1-5090-4352-1
Wydawca: IEEE
DOI: 10.1109/nmdc.2016.7777128

Free-running InGaAs/InP single-photon avalanche diodes with 50 ps timing jitter (Conference Presentation)

Autorzy: Gianluca Boso, Emna Amri, Boris Korzh, Hugo Zbinden
Opublikowane w: Advanced Photon Counting Techniques XI, 2017, Strona(/y) 102120F
Wydawca: SPIE
DOI: 10.1117/12.2264698

Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates

Autorzy: P. J. Carrington, E. Delli, P. D. Hodgson, E. Repiso, A. Craig, A. Marshall, A. Krier
Opublikowane w: 2017 IEEE Photonics Conference (IPC), 2017, Strona(/y) 307-308, ISBN 978-1-5090-6578-3
Wydawca: IEEE
DOI: 10.1109/ipcon.2017.8116118

The role of the oxide shell in the chemical functionalization of plasmonic gallium nanoparticles

Autorzy: S. Catalán-Gómez, M. Briones, A. Redondo-Cubero, F. J. Palomares, F. Nucciarelli, E. Lorenzo, J. L. Pau
Opublikowane w: Optical Sensors 2017, 2017, Strona(/y) 102310D
Wydawca: SPIE
DOI: 10.1117/12.2265665

Optical spectroscopy of p-GaAs nanopillars on Si for monolithic integrated light sources

Autorzy: J. S. D. Morales, S. Gandan, D. Ren, Tomasz J. Ochalski, Diana L. Huffaker
Opublikowane w: Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV, 2017, Strona(/y) 1011409
Wydawca: SPIE
DOI: 10.1117/12.2252507

Gallium nanoparticles colloids synthesis for UV bio-optical sensors

Autorzy: Flavio Nucciarelli, Iria Bravo, Luis Vázquez, Encarnación Lorenzo, Jose Luis Pau
Opublikowane w: Optical Sensors 2017, 2017, Strona(/y) 1023127
Wydawca: SPIE
DOI: 10.1117/12.2265883

Plasmonic bio-sensing based on highly doped semiconductors

Autorzy: Thierry Taliercio, María José Milla-Rodrigo, Fernando Gonzalez Posada Flores, Mario Bomers, Franziska B. Barho, Eric Tournié, Laurent Cerutti
Opublikowane w: Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications 2017, 2017, Strona(/y) 26, ISBN 9781-510611641
Wydawca: SPIE
DOI: 10.1117/12.2274303

InSb-based quantum dot nanostructures for mid-infrared photonic devices

Autorzy: P. J. Carrington, E. Repiso, Q. Lu, H. Fujita, A. R. J. Marshall, Q. Zhuang, A. Krier
Opublikowane w: Nanophotonic Materials XIII, 2016, Strona(/y) 99190C
Wydawca: SPIE
DOI: 10.1117/12.2236869

Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells

Autorzy: P. J. Carrington, D. Montesdeoca, H. Fujita, J. James, M. C. Wagener, J. R. Botha, A. R. J. Marshall, A. Krier
Opublikowane w: Next Generation Technologies for Solar Energy Conversion VII, 2016, Strona(/y) 993708
Wydawca: SPIE
DOI: 10.1117/12.2236957

Design of 3.3 and 4.2 μm mid-infrared metamorphic quantum well light-emitting diodes

Autorzy: Reza Arkani, Christopher A. Broderick, Eoin P. OrReilly
Opublikowane w: 2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2018, Strona(/y) 119-120, ISBN 978-1-5386-5599-3
Wydawca: IEEE
DOI: 10.1109/nusod.2018.8570223

AlInAsSb for GaSb-based multi-junction solar cells

Autorzy: Julie Tournet, Eric Tournié, Yves Rouillard
Opublikowane w: Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VII, 2018, Strona(/y) 10, ISBN 9781-510615403
Wydawca: SPIE
DOI: 10.1117/12.2289791

Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes with high immunity to temperature fluctuation

Autorzy: S. Zhang, Salman Abdullah, Chee Hing Tan, Jo Shien Ng
Opublikowane w: Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz, 2018, Strona(/y) 22, ISBN 9781-510620308
Wydawca: SPIE
DOI: 10.1117/12.2326847

Computational design of metamorphic In(N)AsSb mid-infrared light-emitting diodes

Autorzy: Reza Arkani, Christopher A. Broderick, Eoin P. O'Reilly
Opublikowane w: 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), 2018, Strona(/y) 1-4, ISBN 978-1-5386-5336-4
Wydawca: IEEE
DOI: 10.1109/nano.2018.8626250

Redshift of lasing modes in time-resolved spectra for GaAs-AlGaAs core-shell nanowires lasers on silicon (Conference Presentation)

Autorzy: Juan Salvador Dominguez Morales, Thomas Stettner, Shumithira Gandan, David P. Williams, Gregor Koblmueller, Jonathan J. Finley, Tomasz J. Ochalski
Opublikowane w: Silicon Photonics XIII, 2018, Strona(/y) 38, ISBN 9781-510615601
Wydawca: SPIE
DOI: 10.1117/12.2286315

Single-mode lasing in InGaAs nanopillars on SOI (Conference Presentation)

Autorzy: Juan Salvador Dominguez Morales, Hyunseok Kim, Shumithira Gandan, David P. Williams, Wook-Jae Lee, Diana L. Huffaker, Tomasz J. Ochalski
Opublikowane w: Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV, 2018, Strona(/y) 3, ISBN 9781-510615724
Wydawca: SPIE
DOI: 10.1117/12.2286320

Rezultaty

Publikacje

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