Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics

Risultati finali

Prototype tandem solar cells demonstrated and characterised
Metamorphic III-Sb heterostructures with InP lattice-parameter

Metamorphic IIISb heterostructures with InP latticeparameter

Final report
Cells containing III-Sb/Si tandem heterostructures
3rd Training report

3rd training report

Theoretical analysis of design and optimum material requirements for III-V(N) devices in WP1, 3 and 4.

Theoretical analysis of design and optimum material requirements for IIIVN devices in WP1 3 and 4

1st Training report

1st training report

2nd Training report

2nd training report

(InGa)(AsN)/GaAs quantum wells emitting at 1.31 and 1.55 µm
Optimal hydrogenation conditions for full H passivation determined
Nanoscale LEDs fabricated by spatially controlled H-dopant dissociation
All ESRs completed 1st secondment
Progress report

Progress report worked out and delivered to REA

Solar cells containing GaAsN/GaSb QD stacks exhibiting intermediate band behaviour
Single layer GaSbN QD grown and characterised
Band structure parameters established for relevant III-V(N) heterostructures

Band structure parameters established for relevant IIIVN heterostructures

Seminars, exhibitions & webinars
Public engagement

Press releases, open days, public lectures, YouTube/podcasts

Website launch

Supervisory Board of the Network

Supervisory Board in place and ready to take decisions

Summer school
All doctoral degrees awarded
Conference

Pubblicazioni

Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode

Autori: D. M. Di Paola, M. Kesaria, O. Makarovsky, A. Velichko, L. Eaves, N. Mori, A. Krier, A. Patanè
Pubblicato in: Scientific Reports, Numero 6, 2016, Pagina/e 32039, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/srep32039

Quantum Random Number Generation Using a Quanta Image Sensor

Autori: Emna Amri, Yacine Felk, Damien Stucki, Jiaju Ma, Eric Fossum
Pubblicato in: Sensors, Numero 16/7, 2016, Pagina/e 1002, ISSN 1424-8220
Editore: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/s16071002

All-semiconductor plasmonic gratings for biosensing applications in the mid-infrared spectral range

Autori: Franziska B. Barho, Fernando Gonzalez-Posada, Maria-José Milla-Rodrigo, Mario Bomers, Laurent Cerutti, Thierry Taliercio
Pubblicato in: Optics Express, Numero 24/14, 2016, Pagina/e 16175, ISSN 1094-4087
Editore: Optical Society of America
DOI: 10.1364/OE.24.016175

Localized surface plasmon resonance frequency tuning in highly doped InAsSb/GaSb one-dimensional nanostructures

Autori: M J Milla, F Barho, F González-Posada, L Cerutti, M Bomers, J-B Rodriguez, E Tournié, T Taliercio
Pubblicato in: Nanotechnology, Numero 27/42, 2016, Pagina/e 425201, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/0957-4484/27/42/425201

Highly-mismatched InAs/InSe heterojunction diodes

Autori: A. V. Velichko, Z. R. Kudrynskyi, D. M. Di Paola, O. Makarovsky, M. Kesaria, A. Krier, I. C. Sandall, C. H. Tan, Z. D. Kovalyuk, A. Patanè
Pubblicato in: Applied Physics Letters, Numero 109/18, 2016, Pagina/e 182115, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/1.4967381

Temporal jitter in free-running InGaAs/InP single-photon avalanche detectors

Autori: Emna Amri, Gianluca Boso, Boris Korzh, Hugo Zbinden
Pubblicato in: Optics Letters, Numero 41/24, 2016, Pagina/e 5728, ISSN 0146-9592
Editore: Optical Society of America
DOI: 10.1364/OL.41.005728

Investigation of temperature and temporal stability of AlGaAsSb avalanche photodiodes

Autori: Salman Abdullah, Chee Hing Tan, Xinxin Zhou, Shiyong Zhang, Lucas Pinel, Jo Shien Ng
Pubblicato in: Optics Express, Numero 25/26, 2017, Pagina/e 33610, ISSN 1094-4087
Editore: Optical Society of America
DOI: 10.1364/oe.25.033610

Pedestal formation of all-semiconductor gratings through GaSb oxidation for mid-IR plasmonics

Autori: Mario Bomers, Franziska Barho, María José Milla-Rodrigo, Laurent Cerutti, Richard Arinero, Fernando Gonzalez-Posada Flores, Eric Tournié, Thierry Taliercio
Pubblicato in: Journal of Physics D: Applied Physics, Numero 51/1, 2018, Pagina/e 015104, ISSN 0022-3727
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6463/aa98af

Highly doped semiconductor plasmonic nanoantenna arrays for polarization selective broadband surface-enhanced infrared absorption spectroscopy of vanillin

Autori: Franziska B. Barho, Fernando Gonzalez-Posada, Maria-Jose Milla, Mario Bomers, Laurent Cerutti, Eric Tournié, Thierry Taliercio
Pubblicato in: Nanophotonics, Numero 7/2, 2017, ISSN 2192-8614
Editore: De Gruyter
DOI: 10.1515/nanoph-2017-0052

Phosphonate monolayers on InAsSb and GaSb surfaces for mid-IR plasmonics

Autori: Mario Bomers, Aude Mezy, Laurent Cerutti, Franziska Barho, Fernando Gonzalez-Posada Flores, Eric Tournié, Thierry Taliercio
Pubblicato in: Applied Surface Science, Numero 451, 2018, Pagina/e 241-249, ISSN 0169-4332
Editore: Elsevier BV
DOI: 10.1016/j.apsusc.2018.04.208

Tunable plasmonic resonance of gallium nanoparticles by thermal oxidation at low temperatures

Autori: S Catalán-Gómez, A Redondo-Cubero, F J Palomares, F Nucciarelli, J L Pau
Pubblicato in: Nanotechnology, Numero 28/40, 2017, Pagina/e 405705, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6528/aa8505

Optical Detection and Spatial Modulation of Mid-Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor

Autori: Davide Maria Di Paola, Anton V. Velichko, Mario Bomers, Nilanthy Balakrishnan, Oleg Makarovsky, Mario Capizzi, Laurent Cerutti, Alexei N. Baranov, Manoj Kesaria, Anthony Krier, Thierry Taliercio, Amalia Patanè
Pubblicato in: Advanced Optical Materials, Numero 6/3, 2018, Pagina/e 1700492, ISSN 2195-1071
Editore: Wiley
DOI: 10.1002/adom.201700492

Surface-enhanced infrared absorption with Si-doped InAsSb/GaSb nano-antennas

Autori: M. J. Milla, F. Barho, F. González-Posada, L. Cerutti, B. Charlot, M. Bomers, F. Neubrech, E. Tournie, T. Taliercio
Pubblicato in: Optics Express, Numero 25/22, 2017, Pagina/e 26651, ISSN 1094-4087
Editore: Optical Society of America
DOI: 10.1364/oe.25.026651

Quantum cascade lasers grown on silicon

Autori: Hoang Nguyen-Van, Alexei N. Baranov, Zeineb Loghmari, Laurent Cerutti, Jean-Baptiste Rodriguez, Julie Tournet, Gregoire Narcy, Guilhem Boissier, Gilles Patriarche, Michael Bahriz, Eric Tournié, Roland Teissier
Pubblicato in: Scientific Reports, Numero 8/1, 2018, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/s41598-018-24723-2

High Ultraviolet Absorption in Colloidal Gallium Nanoparticles Prepared from Thermal Evaporation

Autori: Flavio Nucciarelli, Iria Bravo, Sergio Catalan-Gomez, Luis Vázquez, Encarnación Lorenzo, Jose Pau
Pubblicato in: Nanomaterials, Numero 7/7, 2017, Pagina/e 172, ISSN 2079-4991
Editore: MDPI
DOI: 10.3390/nano7070172

Effects of carrier injection profile on low noise thin Al 085 Ga 015 As 056 Sb 044 avalanche photodiodes

Autori: Lucas L.G. Pinel, Simon J. Dimler, Xinxin Zhou, Salman Abdullah, Shiyong Zhang, Chee Hing Tan, Jo Shien Ng
Pubblicato in: Optics Express, Numero 26/3, 2018, Pagina/e 3568, ISSN 1094-4087
Editore: Optical Society of America
DOI: 10.1364/oe.26.003568

InP:S/AlInAs:C Tunnel Junction Grown by MOVPE for Photovoltaic Applications

Autori: Stefano Soresi, Gwénaëlle Hamon, Alexandre Larrue, José Alvarez, Mauricio P. Pires, Jean Decobert
Pubblicato in: physica status solidi (a), Numero 215/8, 2018, Pagina/e 1700427, ISSN 1862-6300
Editore: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.201700427

Growth and characterization of AlInAsSb layers lattice-matched to GaSb

Autori: J. Tournet, Y. Rouillard, E. Tournié
Pubblicato in: Journal of Crystal Growth, Numero 477, 2017, Pagina/e 72-76, ISSN 0022-0248
Editore: Elsevier BV
DOI: 10.1016/j.jcrysgro.2017.04.001

Size-selective breaking of the core–shell structure of gallium nanoparticles

Autori: S Catalán-Gómez, A Redondo-Cubero, F J Palomares, L Vázquez, E Nogales, F Nucciarelli, B Méndez, N Gordillo, J L Pau
Pubblicato in: Nanotechnology, Numero 29/35, 2018, Pagina/e 355707, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6528/aacb91

Site-Controlled Single-Photon Emitters Fabricated by Near-Field Illumination

Autori: Francesco Biccari, Alice Boschetti, Giorgio Pettinari, Federico La China, Massimo Gurioli, Francesca Intonti, Anna Vinattieri, MayankShekhar Sharma, Mario Capizzi, Annamaria Gerardino, Luca Businaro, Mark Hopkinson, Antonio Polimeni, Marco Felici
Pubblicato in: Advanced Materials, Numero 30/21, 2018, Pagina/e 1705450, ISSN 0935-9648
Editore: United Nations Industrial Developement Organization
DOI: 10.1002/adma.201705450

Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in water

Autori: Mario Bomers, Davide Maria Di Paola, Laurent Cerutti, Thierry Michel, Richard Arinero, Eric Tournié, Amalia Patanè, Thierry Taliercio
Pubblicato in: Semiconductor Science and Technology, Numero 33/9, 2018, Pagina/e 095009, ISSN 0268-1242
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6641/aad4bf

Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared

Autori: J.A. Keen, E. Repiso, Q. Lu, M. Kesaria, A.R.J. Marshall, A. Krier
Pubblicato in: Infrared Physics & Technology, Numero 93, 2018, Pagina/e 375-380, ISSN 1350-4495
Editore: Elsevier BV
DOI: 10.1016/j.infrared.2018.08.001

Modified qHAADF method for atomic column-by-column compositional quantification of semiconductor heterostructures

Autori: Atif A. Khan, M. Herrera, J. Pizarro, P. L. Galindo, P. J. Carrington, H. Fujita, A. Krier, S. I. Molina
Pubblicato in: Journal of Materials Science, Numero 54/4, 2019, Pagina/e 3230-3241, ISSN 0022-2461
Editore: Kluwer Academic Publishers
DOI: 10.1007/s10853-018-3073-y

Open circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure

Autori: D. Montesdeoca, P.J. Carrington, I.P. Marko, M.C. Wagener, S.J. Sweeney, A. Krier
Pubblicato in: Solar Energy Materials and Solar Cells, Numero 187, 2018, Pagina/e 227-232, ISSN 0927-0248
Editore: Elsevier BV
DOI: 10.1016/j.solmat.2018.07.028

1 eV Ga(NAsSb) grown by MOVPE using di- tertiary -butyl-arsano-amine (DTBAA)

Autori: E. Sterzer, O. Maßmeyer, L. Nattermann, K. Jandieri, S. Gupta, A. Beyer, B. Ringler, C. von Hänisch, W. Stolz, K. Volz
Pubblicato in: AIP Advances, Numero 8/5, 2018, Pagina/e 055329, ISSN 2158-3226
Editore: American Institute of Physics Inc.
DOI: 10.1063/1.5034083

GaSb-based solar cells for multi-junction integration on Si substrates

Autori: J. Tournet, S. Parola, A. Vauthelin, D. Montesdeoca Cardenes, S. Soresi, F. Martinez, Q. Lu, Y. Cuminal, P.J. Carrington, J. Décobert, A. Krier, Y. Rouillard, E. Tournié
Pubblicato in: Solar Energy Materials and Solar Cells, Numero 191, 2019, Pagina/e 444-450, ISSN 0927-0248
Editore: Elsevier BV
DOI: 10.1016/j.solmat.2018.11.035

Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells

Autori: Magnus C. Wagener, Denise Montesdeoca, Qi Lu, Andrew R.J. Marshall, Anthony Krier, J.R. Botha, Peter J. Carrington
Pubblicato in: Solar Energy Materials and Solar Cells, Numero 189, 2019, Pagina/e 233-238, ISSN 0927-0248
Editore: Elsevier BV
DOI: 10.1016/j.solmat.2018.07.030

Thin $\text{Al}_{\mathbf{1{-}}{\boldsymbol x}}$ Ga$_{\boldsymbol{x}}$As $_{\mathbf{0.56}}$Sb $_{\mathbf{0.44}}$ Diodes With Low Excess Noise

Autori: Xinxin Zhou, Lucas L. G. Pinel, Simon J. Dimler, Shiyong Zhang, Jo Shien Ng, Chee Hing Tan
Pubblicato in: IEEE Journal of Selected Topics in Quantum Electronics, Numero 24/2, 2018, Pagina/e 1-5, ISSN 1077-260X
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/jstqe.2017.2725441

Thin Al 1− x Ga x As 0.56 Sb 0.44 diodes with extremely weak temperature dependence of avalanche breakdown

Autori: Xinxin Zhou, Chee Hing Tan, Shiyong Zhang, Manuel Moreno, Shiyu Xie, Salman Abdullah, Jo Shien Ng
Pubblicato in: Royal Society Open Science, Numero 4/5, 2017, Pagina/e 170071, ISSN 2054-5703
Editore: The Royal Society
DOI: 10.1098/rsos.170071

Highly doped InAsSb plasmonic arrays for mid-infrared biosensing

Autori: F. Barho, F. Gonzalez-Posada, M.L Milla, M. Bomers, L. Cerutti, T. Taliercio
Pubblicato in: 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), 2016, Pagina/e 1-2, ISBN 978-1-5090-4352-1
Editore: IEEE
DOI: 10.1109/nmdc.2016.7777128

Free-running InGaAs/InP single-photon avalanche diodes with 50 ps timing jitter (Conference Presentation)

Autori: Gianluca Boso, Emna Amri, Boris Korzh, Hugo Zbinden
Pubblicato in: Advanced Photon Counting Techniques XI, 2017, Pagina/e 102120F
Editore: SPIE
DOI: 10.1117/12.2264698

Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates

Autori: P. J. Carrington, E. Delli, P. D. Hodgson, E. Repiso, A. Craig, A. Marshall, A. Krier
Pubblicato in: 2017 IEEE Photonics Conference (IPC), 2017, Pagina/e 307-308, ISBN 978-1-5090-6578-3
Editore: IEEE
DOI: 10.1109/ipcon.2017.8116118

The role of the oxide shell in the chemical functionalization of plasmonic gallium nanoparticles

Autori: S. Catalán-Gómez, M. Briones, A. Redondo-Cubero, F. J. Palomares, F. Nucciarelli, E. Lorenzo, J. L. Pau
Pubblicato in: Optical Sensors 2017, 2017, Pagina/e 102310D
Editore: SPIE
DOI: 10.1117/12.2265665

Optical spectroscopy of p-GaAs nanopillars on Si for monolithic integrated light sources

Autori: J. S. D. Morales, S. Gandan, D. Ren, Tomasz J. Ochalski, Diana L. Huffaker
Pubblicato in: Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV, 2017, Pagina/e 1011409
Editore: SPIE
DOI: 10.1117/12.2252507

Gallium nanoparticles colloids synthesis for UV bio-optical sensors

Autori: Flavio Nucciarelli, Iria Bravo, Luis Vázquez, Encarnación Lorenzo, Jose Luis Pau
Pubblicato in: Optical Sensors 2017, 2017, Pagina/e 1023127
Editore: SPIE
DOI: 10.1117/12.2265883

Plasmonic bio-sensing based on highly doped semiconductors

Autori: Thierry Taliercio, María José Milla-Rodrigo, Fernando Gonzalez Posada Flores, Mario Bomers, Franziska B. Barho, Eric Tournié, Laurent Cerutti
Pubblicato in: Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications 2017, 2017, Pagina/e 26, ISBN 9781-510611641
Editore: SPIE
DOI: 10.1117/12.2274303

InSb-based quantum dot nanostructures for mid-infrared photonic devices

Autori: P. J. Carrington, E. Repiso, Q. Lu, H. Fujita, A. R. J. Marshall, Q. Zhuang, A. Krier
Pubblicato in: Nanophotonic Materials XIII, 2016, Pagina/e 99190C
Editore: SPIE
DOI: 10.1117/12.2236869

Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells

Autori: P. J. Carrington, D. Montesdeoca, H. Fujita, J. James, M. C. Wagener, J. R. Botha, A. R. J. Marshall, A. Krier
Pubblicato in: Next Generation Technologies for Solar Energy Conversion VII, 2016, Pagina/e 993708
Editore: SPIE
DOI: 10.1117/12.2236957

Design of 3.3 and 4.2 μm mid-infrared metamorphic quantum well light-emitting diodes

Autori: Reza Arkani, Christopher A. Broderick, Eoin P. OrReilly
Pubblicato in: 2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2018, Pagina/e 119-120, ISBN 978-1-5386-5599-3
Editore: IEEE
DOI: 10.1109/nusod.2018.8570223

AlInAsSb for GaSb-based multi-junction solar cells

Autori: Julie Tournet, Eric Tournié, Yves Rouillard
Pubblicato in: Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VII, 2018, Pagina/e 10, ISBN 9781-510615403
Editore: SPIE
DOI: 10.1117/12.2289791

Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes with high immunity to temperature fluctuation

Autori: S. Zhang, Salman Abdullah, Chee Hing Tan, Jo Shien Ng
Pubblicato in: Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz, 2018, Pagina/e 22, ISBN 9781-510620308
Editore: SPIE
DOI: 10.1117/12.2326847

Computational design of metamorphic In(N)AsSb mid-infrared light-emitting diodes

Autori: Reza Arkani, Christopher A. Broderick, Eoin P. O'Reilly
Pubblicato in: 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), 2018, Pagina/e 1-4, ISBN 978-1-5386-5336-4
Editore: IEEE
DOI: 10.1109/nano.2018.8626250

Redshift of lasing modes in time-resolved spectra for GaAs-AlGaAs core-shell nanowires lasers on silicon (Conference Presentation)

Autori: Juan Salvador Dominguez Morales, Thomas Stettner, Shumithira Gandan, David P. Williams, Gregor Koblmueller, Jonathan J. Finley, Tomasz J. Ochalski
Pubblicato in: Silicon Photonics XIII, 2018, Pagina/e 38, ISBN 9781-510615601
Editore: SPIE
DOI: 10.1117/12.2286315

Single-mode lasing in InGaAs nanopillars on SOI (Conference Presentation)

Autori: Juan Salvador Dominguez Morales, Hyunseok Kim, Shumithira Gandan, David P. Williams, Wook-Jae Lee, Diana L. Huffaker, Tomasz J. Ochalski
Pubblicato in: Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV, 2018, Pagina/e 3, ISBN 9781-510615724
Editore: SPIE
DOI: 10.1117/12.2286320

Risultati finali

Pubblicazioni

Condividi questa pagina

Scarica