Design Oriented ModellINg for flexible electrOnics

Livrables

Requirements of design tools for flexible electronics

Report about the requirements of design tools for flexible electronics.

Requirements of design tools for flexible electronics update

Updated report on the requirements of design tools for flexible electronics

Preliminary Compact Model specifications

Report about the needed specifications that compact models for OTFTs and AOS TFTs must satisfy.

‘Compact Model specifications revision

Updated report about the specifications that compact models for OTFTs and AOS TFTs must satisfy.

‘EDA tools integration and simulation performances evaluation

Report about the integration of the developed compact models in EDA tools and the evaluation of their simulation performances

Final release of TCAD software containing all new physical electrical device level models and documentation

Release of the TCAD software which will contain the new physical models for the effects governing the behavior of OTFTs and AOS TFTs Besides release of the associated documentation

Publications

Continuous Charge-Based Current Model for Organic TFT Derived From Gaussian DOS

Auteurs: F. Hain, C. Lammers, F. Horst, F. Hosenfeld, B. Iñiguez, A. Kloes
Publié dans: International Conference on Organic Electronics, 2015
Éditeur: WASET

Self-consistent parameter extraction method for organic-field effect transistors with power-law dependent mobility

Auteurs: Sungyeop Jung, Vincent Mosser, Yvan Bonnassieux and Gilles Horowitz
Publié dans: Material Research Society Fall Meeting, 2015
Éditeur: Cambridge university press

Charge-based Modelling of the Channel Current in Organic Field Effect Transistors Considering Injection Effects

Auteurs: F. Hain, C. Lammers, F. Hosenfeld, Hagen Klauk, Ute Zschieschang, B. Iñiguez, A. Kloes
Publié dans: Electrochemical Society Meeting, Chicago, 2015
Éditeur: ECS Transactions

Characterization and modeling of temperature effects in Amorphous Oxide TFTs

Auteurs: B. Iñiguez, O. Moldovan, A. Cerdeira and M. Estrada
Publié dans: 2017
Éditeur: IEEE Electron Devices Society, University of Cambridge

Low-frequency noise modelin in orgànic and IGZO TFTs

Auteurs: B. Iñiguez, G. Uriarte, W. E. Muhea and T. Gneiting
Publié dans: MOS-AK Workshop, 2018
Éditeur: Wladek Gabrinski (EPFL)

esign Oriented Modeling of TFTs for Flexible Electronics,” 8th International Conference on CAD for TFT transistors (CAD-TFT)

Auteurs: B. Iñiguez
Publié dans: 8th International Conference on CAD for TFT transistors (CAD-TFT),, 2018
Éditeur: IEEE Electron Devices Society

Analytical modeling of non-linear injection effects in organic TFT

Auteurs: A. Kloes, M. Graef, F. Hain, H. Klauk, J. Pruefer
Publié dans: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017
Éditeur: IEEE Electron Devices Society, University of Cambridge

Realistic Small-Signal AC Simulation of a Bottom-Gate OTFT

Auteurs: M. Graef, J. Pruefer, A. Kloes
Publié dans: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017
Éditeur: IEEE Electron Devices Society, University of Cambridge

Mathematical and Semi-Physical Compact Modeling for Emerging Technologies

Auteurs: Y. Courant, A. Nathan, F. Mohamed
Publié dans: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017
Éditeur: IEEE Electron Devices Society, University of Cambridge

Modelling of TFT s-Parameters and its Impact on Cut-Off Frequency Extraction

Auteurs: X. Chen
Publié dans: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017
Éditeur: IEEE Electron Devices Society, University of Cambridge

Modelling Diode Reverse Recovery for Wireless Power Transfer

Auteurs: P. Fan, F. Mohamed, A. Nathan
Publié dans: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017
Éditeur: IEEE Electron Devices Society, University of Cambridge

A unified charge-based TFT core compact model

Auteurs: S. Mijalkovic
Publié dans: International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017
Éditeur: IEEE Electron Devices Society, University of Cambridge

Guidelines for robust compact model coding with Verilog-A

Auteurs: S. Mijalkovic
Publié dans: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017
Éditeur: IEEE Electron Devices Society, University of Cambridge

Charge-Based Compact Model for DC Current in Organic TFT Including Non-Linear Injection Effects with a Close Link to Electrical Device Parameters

Auteurs: A. Kloes, F. Hain, M. Graef, B. Iñiguez
Publié dans: Proceedings 231st ECS Meeting, New Orleans, 2017 (invited), 2017
Éditeur: ECS The Electrochemical Society

Performant Physical and Spice Model of Organic TFT

Auteurs: Y. Bonnassieux
Publié dans: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017
Éditeur: IEEE Electron Devices Society, University of Cambridge

Design Tools Challenges for Large Area Electronics

Auteurs: A. Nejim
Publié dans: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017
Éditeur: IEEE Electron Devices Society, University of Cambridge

Physics-Based Compact Model for Organic Thin-Film Transistors with a Universal Charge Expression for Quasi-Static Operation

Auteurs: A. Kloes, J. Pruefer, J. Leise, G. Darbandy, and H. Klauk
Publié dans: 235st ECS Meeting, 2019
Éditeur: The Electrochemical Society

Compact Modeling of I-V and C-V Characteristics in OTFTs from 125K to 350K,

Auteurs: B. Iniguez, H. Cortes-Ordonez, A. Cerdeira, M. Estrada, S. Jacob, C. Haddad, G. Ghibaudo, and F. Mohamed
Publié dans: 235th ECS Meeting, 2019
Éditeur: The Electrochemical Society

Simulation of CdSe Based Quantum Dot Hybrid Light Emitting Diodes Using Tcad Continuous Models

Auteurs: R. Grassi, I. Arroyo, B. Iñiguez, T. Drevon, A. Plews, S. Chourou, M. Townsend, and A. Nejim
Publié dans: 235st ECS Meeting, 2019
Éditeur: ECS The Electrochemical Society

Compact Modeling of Non-Linear Contact Resistance in Staggered and Coplanar Organic Thin-Film Transistors

Auteurs: Jakob Pruefer, Benjamin Iñiguez, Hagen Klauk, Alexander Kloes
Publié dans: Proceedings ICOE 2018, 2018
Éditeur: Université de Bordeaux

UMEM based 1/f noise model for amorphous ESL IGZO TFTs

Auteurs: W. E. Muhea, T. Gneiting, B. Iñiguez
Publié dans: 1st Latin American Electron Devices Conference, 2019
Éditeur: IEEE Electron Devices Society

Parameter extraction and modeling of OTFTS from 150K to 300K

Auteurs: Harold Cortes-Ordonez, Clara Haddad, Stephanie Jacob, Gerad Ghibaudo, Firas Mohamed, Magali Estrada, Antonio Cerdeira and Benjamin Iñiguez
Publié dans: 1st Latin American Electron Devices Conference, 2018
Éditeur: IEEE Electron Devices Society

Charge-Based DC/AC Compact Modeling of Organic TFTs

Auteurs: A. Kloes, Jakob Pruefer, Jakob Leise, Ghader Darbandy
Publié dans: 2018 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2018
Éditeur: IEEE Electron Devices Society

Parameter extraction method for disordered organic field-effect transistors

Auteurs: Sungyeop Jung, Vincent Mosser, Yvan Bonnassieux, Gilles Horowitz
Publié dans: The Polymer Society of Korea Spring Meeting, 2017
Éditeur: The Polymer Society of Korea

Impact of mechanical deformation on flexible thin film transistor performance

Auteurs: A. Nejim
Publié dans: 2018 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2018
Éditeur: IEEE Electron Devices Society

Strong physical background in OTFT compact model

Auteurs: Y. Bonnassieux
Publié dans: 2018 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2018
Éditeur: IEEE Electron Devices Society

Oxide Electronics

Auteurs: A Nathan
Publié dans: 2018 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2018
Éditeur: IEEE Electron Devices Society

Device-Circuit Interactions in Oxide TFT Low Power Circuits and Systems (invited)

Auteurs: A Nathan
Publié dans: IEEE Nanotechnology Materials and Devices Conference (NMDC), 2018
Éditeur: IEEE

Transparent and Oxide Nano-Electronics

Auteurs: A. Nathan
Publié dans: IEEE International Flexible Electronics Technology Conference (invited), 2018
Éditeur: IEEE

Physical SPICE Model of Organic Thin Film Transistor

Auteurs: Y. Bonnassieux, S. Jung, and G. Horowitz
Publié dans: Book of Abstracts of the 231 Electrochemical Society (ECS) Meeting, 2017
Éditeur: ECS - The Electrochemical Society

Ultralow power subthreshold inorganic and organic thin film transistors

Auteurs: C Jiang, A. Nathan
Publié dans: LOPEC 2018, 2018
Éditeur: oe-a Organic and Printed Electronics Association

Compact modeling and parameter extraction of Amorphous Oxide TFTs

Auteurs: B Iñiguez
Publié dans: IEEE EDS Mini-Colloquium, Spanish Conference on Electron Devices (invited), 2018
Éditeur: *

TFT Modelling for Circuits Simulation

Auteurs: A. Nathan, X. Cheng, G. Yao, and S. Lee
Publié dans: International Thin-film Transistor Conference (ITC) 2015, Paris, France, Feb. 2015, 2015
Éditeur: T. Mohammed-Brahim (Rennes 1 University, France)

Charge-Based Current Model of Organic TFT for All Operation Regions with a Close Link to Electrical Device Parameters

Auteurs: A. Kloes, F. Hain, M. Graef, S. Jacob, B. Iniguez
Publié dans: Workshop on Flexible Electronics 2016, Tarragona (Spain), 2016
Éditeur: B. Iñiguez

Defining the injection barrier at metal/organic semiconductor interface with a Gaussian density-of-states

Auteurs: Sungyeop Jung, Chang-Hyun Kim, Yvan Bonnassieux and Gilles Horowitz
Publié dans: International Thin-Film Transistor Conference (ITC), Rennes, France, February 26-27 (2015), 2015
Éditeur: T. Mohammed-Brahim (Rennes 1 University, France)

Threshold Voltage and Conduction Mechanisms in Disordered Semiconductor-based Thin Film Transistors

Auteurs: S. Lee, A. Nathan
Publié dans: 7th International Conference on CAD for TFT transistors, Beijing (China) October 2015, 2015
Éditeur: Information not available

Analytically correlated charge transport and injection in solution-processed organic field-effect transistors

Auteurs: C.-H. Kim, S. Jung, Y. Bonnassieux, J. E. Anthony, I. Kymissis, M.-H. Yoon, and G. Horowitz
Publié dans: European Conference on Molecular Electronics (ECME) 2015, 2015
Éditeur: Paolo Samorì

Closed-Form Charge-Based Current Model of Organic TFT Including Non-Linear Injection Effects

Auteurs: A. Kloes, F. Hain, M. Graef, B. Iniguez
Publié dans: MOS-AK ESSDERC/ESSCIRC Workshop, Lausanne, 2016, 2016
Éditeur: Wladek Grabinski

Ultra-thin gate dielectric for organic field-effect transistors

Auteurs: M. Albariqi, T. Alhathal, S. Jung, Y. Bonnassieux and G. Zucchi
Publié dans: International Thin-Film Transistor Conference (ITC), Rennes, France, February 26-27 (2015), 2015
Éditeur: T. Mohammed-Brahim (Rennes 1 University, France)

Oxide Semiconductor TFT Technology for Circuits and Systems”, 7th International Conference on CAD for TFT transistors

Auteurs: A. Nathan
Publié dans: 7th International Conference on CAD for TFT transistors 2016, 2016
Éditeur: Information not available

Modeling organic field effect-transistors with power-law dependent mobility and contact resistance

Auteurs: S. Jung, J. W. Jin, V. Mosser, Y. Bonnassieux and G. Horowitz
Publié dans: International Thin-Film Transistor Conference (ITC) 2016, 2016
Éditeur: Han-Ping D. Shieh (National Chiao Tung University, Taiwan)

Gate bias dependence of mobility in organic field-effect transistors with Gaussian density-ofstates

Auteurs: S. Jung, J. W. Jin, Y. Bonnassieux and G. Horowitz
Publié dans: International Conference on Organic Electronics (ICOE), Bratislava, Slovakia, June 13-15 (2016), 2016
Éditeur: Martin Weis

Design Tools for TFT Circuits and Systems

Auteurs: A. Nathan
Publié dans: 7th International Conference on CAD for TFT transistors, Beijing (China) October 2015, 2015
Éditeur: Information not available

TCAD for Compact Model Development Get Real”, 7th International Conference on CAD for TFT transistors

Auteurs: A. Nejim
Publié dans: 7th International Conference on CAD for TFT transistors, Beijing (China) October 2015, 2015
Éditeur: Information not available

N-type organic field-effect transistors with high performance and low operation voltage

Auteurs: S. Jung, M. Al-Bariqi, G. Gruntz, Y. Nicolas, L. Hirsch, T. Toupance, Y. Bonnassieux and G. Horowitz
Publié dans: International Conference on Organic Electronics (ICOE), Erlangen, Germany, June 15-17 (2015), 2015
Éditeur: WASET

Recent Progress in TFT Compact Modeling and Parameter Extraction Techniques

Auteurs: B. Iñiguez
Publié dans: 7th International Conference on CAD for TFT transistors, Beijing (China) October 2015, 2015
Éditeur: Information not available

Oxide thin film transistor technology: Capturing device-circuit interactions

Auteurs: Arokia Nathan, Sungsik Lee, Sanghun Jeon, Reza Chaji
Publié dans: 2015 IEEE International Electron Devices Meeting (IEDM), 2015, Page(s) 6.7.1-6.7.4, ISBN 978-1-4673-9894-7
Éditeur: IEEE
DOI: 10.1109/IEDM.2015.7409643

Fundamental difference in the electrical characteristics of organic rectifying diodes under non-degenerate and degenerate regime related with a Gaussian density-of-states

Auteurs: S. Jung, Y. Bonnassieux and Gi- Horowitz
Publié dans: European Materials Research Society Spring Meeting (E-MRS), Lille, France, May 11-15 (2015), 2015
Éditeur: European Materials Research Society

Large Area Electronics: From Devices to Circuits and Systems

Auteurs: A. Nathan
Publié dans: International Conference on Electrical & Electronic Technology, Selangor, Malaysia, August 2016, 2016
Éditeur: Universiti Putra Malaysia

Device-Circuit Interactions in Thin Film Transistor Circuits and Systems

Auteurs: X. Cheng, S. Lee, A. Nathan
Publié dans: International Thin-Film Transistor Conference (ITC), Hsinchu, Taiwan, February 25-26 (2016), 2016
Éditeur: National Chiao Tung University

Modeling the variation of threshold voltage, mobility factor and saturation coefficient in amorphous Indium-Gallium-Zinc Oxide thin film transistors

Auteurs: Y. Hernandez-Barrios, F. Avila, M. Estrada, A. Cerdeira, O. Moldovan, B. Iniguez, R. Picos
Publié dans: 2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE), 2016, Page(s) 1-4, ISBN 978-1-5090-3511-3
Éditeur: IEEE
DOI: 10.1109/ICEEE.2016.7751186

Characterization and modeling of Organic and Oxide Semiconductor TFTs

Auteurs: M. Estrada, A. Cerdeira, A. Castro-Carranza, L. F. Marsal, J. Pallarès, and B. Iñiguez
Publié dans: Workshop on Flexible Electronics, Tarragona (Spain), June 2016, 2016
Éditeur: B. Iñiguez (Univ. Rovira i Virgili, Spain)

TFT Circuit Building Blocks and Design Tools for Flexible Electronics

Auteurs: A. Nathan
Publié dans: Workshop on Flexible Electronics, Tarragona (Spain), June 29 2016, 2016
Éditeur: Benjamin Iniguez, Universitat Rovira i Virgili, Spain

Compact modeling approaches for organic and oxide TFTs

Auteurs: B. Iñiguez
Publié dans: Compact modeling approaches for organic and oxide TFTs,” MOS-AK Workshop, Dresden (Germany), March 18 2016., 2016
Éditeur: Wladek Grabinski

Charge-Based Compact Model for DC Current in Organic TFT Including Non-Linear Injection Effects with a Close Link to Electrical Device Parameter

Auteurs: Alexander Kloes, Franziska Hain, Michael Graef, B. Iniguez
Publié dans: Proceedings 231st ECS Meeting, 2017
Éditeur: The Electrochemical Society

Injection barrier at metal/organic semiconductor junctions with a Gaussian density-of-states

Auteurs: Sungyeop Jung, Chang-Hyun Kim, Yvan Bonnassieux, Gilles Horowitz
Publié dans: Journal of Physics D: Applied Physics, Numéro 48/39, 2015, Page(s) 395103, ISSN 0022-3727
Éditeur: Institute of Physics Publishing
DOI: 10.1088/0022-3727/48/39/395103

Charge density increase in submonolayer organic field-effect transistors

Auteurs: T. Cramer, A. Kyndiah, A. Kloes, M. Murgia, B. Fraboni, F. Biscarini
Publié dans: Physical Review B, Numéro 91/20, 2015, ISSN 1098-0121
Éditeur: American Physical Society
DOI: 10.1103/PhysRevB.91.205305

Localized Tail States and Electron Mobility in Amorphous ZnON Thin Film Transistors

Auteurs: Sungsik Lee, Arokia Nathan, Yan Ye, Yuzheng Guo, John Robertson
Publié dans: Scientific Reports, Numéro 5, 2015, Page(s) 13467, ISSN 2045-2322
Éditeur: Nature Publishing Group
DOI: 10.1038/srep13467

Transparent Semiconducting Oxide Technology for Touch Free Interactive Flexible Displays

Auteurs: Sungsik Lee, Sanghun Jeon, Reza Chaji, Arokia Nathan
Publié dans: Proceedings of the IEEE, Numéro 103/4, 2015, Page(s) 644-664, ISSN 0018-9219
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/JPROC.2015.2405767

Deep Subthreshold TFT Operation and Design Window for Analog Gain Stages

Auteurs: Xiang Cheng, Sungsik Lee, Arokia Nathan
Publié dans: IEEE Journal of the Electron Devices Society, Numéro 6, 2018, Page(s) 195-200, ISSN 2168-6734
Éditeur: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2018.2789579

Numerical Modeling of an Organic Electrochemical Transistor

Auteurs: Anna Shirinskaya, Gilles Horowitz, Jonathan Rivnay, George Malliaras, Yvan Bonnassieux
Publié dans: Biosensors, Numéro 8/4, 2018, Page(s) 103, ISSN 2079-6374
Éditeur: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/bios8040103

Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

Auteurs: M. Estrada, Y. Hernandez-Barrios, A. Cerdeira, F. Ávila-Herrera, J. Tinoco, O. Moldovan, F. Lime, B. Iñiguez
Publié dans: Solid-State Electronics, Numéro 135, 2017, Page(s) 43-48, ISSN 0038-1101
Éditeur: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2017.06.030

An insight to mobility parameters for AOSTFTs, when the effect of both, localized and free carriers, must be considered to describe the device behavior

Auteurs: Y. Hernandez-Barrios, A. Cerdeira, M. Estrada, B. Iñiguez
Publié dans: Solid-State Electronics, Numéro 149, 2018, Page(s) 32-37, ISSN 0038-1101
Éditeur: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2018.08.006

Employing Pneumatic Nozzle Printing for Controlling the Crystal Growth of Small Molecule Organic Semiconductor for Field-Effect Transistors

Auteurs: Shyuan Yang, Steve Park, Johannes Bintinger, Yvan Bonnassieux, John Anthony, Ioannis Kymissis
Publié dans: Advanced Electronic Materials, Numéro 4/6, 2018, Page(s) 1700534, ISSN 2199-160X
Éditeur: Wiley online
DOI: 10.1002/aelm.201700534

High-Speed Plastic Integrated Circuits: Process Integration, Design, and Test

Auteurs: Miguel Torres-Miranda, Andreas Petritz, Alexander Fian, Christine Prietl, Herbert Gold, Hassan Aboushady, Yvan Bonnassieux, Barbara Stadlober
Publié dans: IEEE Journal on Emerging and Selected Topics in Circuits and Systems, Numéro 7/1, 2017, Page(s) 133-146, ISSN 2156-3357
Éditeur: IEEE Circuits and Systems Society
DOI: 10.1109/jetcas.2016.2611823

Determination and modelin of Flicker Noise mechanisms in polymeric TFTs

Auteurs: G. Uriarte, S. Jacob, G. Ghibaudo, T. Gneiting and B. Iñiguez
Publié dans: Journal of Applied Physics (submitted), 2019, ISSN 0021-8979
Éditeur: American Institute of Physics

A complete charge-based capacitance model for IGZO TFTs

Auteurs: Oana Moldovan, Alejandra Castro-Carranza, Magali Estrada, Antonio Cerdeira, François Lime, Benjamin Iñiguez
Publié dans: IEEE Electron Device Letters (revised and re-submitted), 2019, ISSN 0741-3106
Éditeur: Institute of Electrical and Electronics Engineers

Parameter extraction and modeling of OTFT from 150 to 300 K

Auteurs: H. Cortés, S. Jacob, C. Haddad, G. Ghibaudo, F. Mohamed, M. Estrada, A. Cerdeira, B. Iñiguez
Publié dans: Journal of Applied Physics (submitted), 2019, ISSN 0021-8979
Éditeur: American Institute of Physics

Analysis of Flicker Noise in IGZO ESL TFTs

Auteurs: G. Uriarte, T. Gneiting and B. Iñiguez
Publié dans: IEEE Transactions on Electron Devices (submitted), 2019, ISSN 0018-9383
Éditeur: Institute of Electrical and Electronics Engineers

Flicker noise analysis and unified modeling for ESL a- IGZO TFTs from 298 to 333 K

Auteurs: W. E. Muhea, T. Gneiting, B. Iñiguez
Publié dans: Journal of Applied Physics (submitted, under revision), 2019, ISSN 0021-8979
Éditeur: American Institute of Physics

Analysis and compact modelin of gate capacitance in Organic Thin Film Transistors

Auteurs: H. Cortés, S. Jacob, F. Mohamed, G. Ghibaudo, B. Iñiguez
Publié dans: IEEE Transactions on Electron Devices (revised and re-submitted), 2019, ISSN 0018-9383
Éditeur: Institute of Electrical and Electronics Engineers

Modelling and optimization of quantum dot–based hybrid light emitting diodes using Silvaco’s software

Auteurs: I. Arroyo, B. Iñiguez, T. Drevon, A. Plews, A. Nejim
Publié dans: Journal of Applied Physics (submitted), 2019, ISSN 0021-8979
Éditeur: American Institute of Physics

1/f noise analysis in high mobility small-molecule Organic Thin Film Transistors (in preparation)

Auteurs: Wondwosen E. Muhea, K. Romanjek, X. Mescot, C. G. Theodorou, M. Charbonneau, F. Mohamed, G. Ghibaudo, B. Iñiguez
Publié dans: IEEE Electron Device Letters (in preparation), 2019, ISSN 0741-3106
Éditeur: Institute of Electrical and Electronics Engineers

A TIPS-TPDO-tetraCN-Based n -Type Organic Field-Effect Transistor with a Cross-linked PMMA Polymer Gate Dielectric

Auteurs: Sungyeop Jung, Mohammed Albariqi, Guillaume Gruntz, Thamer Al-Hathal, Alba Peinado, Enric Garcia-Caurel, Yohann Nicolas, Thierry Toupance, Yvan Bonnassieux, Gilles Horowitz
Publié dans: ACS Applied Materials & Interfaces, Numéro 8/23, 2016, Page(s) 14701-14708, ISSN 1944-8244
Éditeur: American Chemical Society
DOI: 10.1021/acsami.6b00480

Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain

Auteurs: Sungsik Lee, Arokia Nathan
Publié dans: Science, Numéro 354/6310, 2016, Page(s) 302-304, ISSN 0036-8075
Éditeur: American Association for the Advancement of Science
DOI: 10.1126/science.aah5035

A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors

Auteurs: Oana Moldovan, Alejandra Castro-Carranza, Antonio Cerdeira, Magali Estrada, Pedro Barquinha, Rodrigo Martins, Elvira Fortunato, Slobodan Miljakovic, Benjamin Iñiguez
Publié dans: Solid-State Electronics, Numéro 126, 2016, Page(s) 81-86, ISSN 0038-1101
Éditeur: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2016.09.011

Fundamental insights into the threshold characteristics of organic field-effect transistors

Auteurs: Sungyeop Jung, Chang-Hyun Kim, Yvan Bonnassieux, Gilles Horowitz
Publié dans: Journal of Physics D: Applied Physics, Numéro 48/3, 2015, Page(s) 035106, ISSN 0022-3727
Éditeur: Institute of Physics Publishing
DOI: 10.1088/0022-3727/48/3/035106

TFT Compact Modeling

Auteurs: Xiang Cheng, Sungsik Lee, Guangyu Yao, Arokia Nathan
Publié dans: Journal of Display Technology, Numéro 12/9, 2016, Page(s) 898-906, ISSN 1551-319X
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/JDT.2016.2556980

Device-Circuit Interactions and Impact on TFT Circuit-System Design

Auteurs: Xiang Cheng, Sungsik Lee, Reza Chaji, Arokia Nathan
Publié dans: IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2016, Page(s) 1-10, ISSN 2156-3357
Éditeur: IEEE Circuits and Systems Society
DOI: 10.1109/JETCAS.2016.2621348

Universal Compact Model for Organic Solar Cell

Auteurs: Jong W. Jin, Sungyeop Jung, Yvan Bonnassieux, Gilles Horowitz, Alexandra Stamateri, Christos Kapnopoulos, Argiris Laskarakis, Stergios Logothetidis
Publié dans: IEEE Transactions on Electron Devices, Numéro 63/10, 2016, Page(s) 4053-4059, ISSN 0018-9383
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2016.2598793

TFT Small Signal Model and Analysis

Auteurs: Xiang Cheng, Sungsik Lee, Arokia Nathan
Publié dans: IEEE Electron Device Letters, Numéro 37/7, 2016, Page(s) 890-893, ISSN 0741-3106
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2016.2575924

On the series resistance in staggered amorphous thin film transistors

Auteurs: Antonio Cerdeira, Magali Estrada, Lluis F. Marsal, Josep Pallares, Benjamín Iñiguez
Publié dans: Microelectronics Reliability, Numéro 63, 2016, Page(s) 325-335, ISSN 0026-2714
Éditeur: Elsevier BV
DOI: 10.1016/j.microrel.2016.05.005

Conduction Threshold in Accumulation-Mode InGaZnO Thin Film Transistors

Auteurs: Sungsik Lee, Arokia Nathan
Publié dans: Scientific Reports, Numéro 6, 2016, Page(s) 22567, ISSN 2045-2322
Éditeur: Nature Publishing Group
DOI: 10.1038/srep22567

An approach to organic field-effect transistor above-threshold drains current compact modeling that provides monotonic decrease of the output conductance with drain bias increasing

Auteurs: V O Turin, B A Rakhmatov, C H Kim, B Iñiguez
Publié dans: IOP Conference Series: Materials Science and Engineering, Numéro 151, 2016, Page(s) 012044, ISSN 1757-8981
Éditeur: IOPScience
DOI: 10.1088/1757-899X/151/1/012044

Charge based, continuous compact model for the channel current in organic thin-film transistors for all regions of operation

Auteurs: Franziska Hain, Michael Graef, Benjamín Iñíguez, Alexander Kloes
Publié dans: Solid-State Electronics, Numéro 133, 2017, Page(s) 17-24, ISSN 0038-1101
Éditeur: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2017.04.002

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