Design Oriented ModellINg for flexible electrOnics

Risultati finali

Requirements of design tools for flexible electronics

Report about the requirements of design tools for flexible electronics.

Requirements of design tools for flexible electronics update

Updated report on the requirements of design tools for flexible electronics

Preliminary Compact Model specifications

Report about the needed specifications that compact models for OTFTs and AOS TFTs must satisfy.

‘Compact Model specifications revision

Updated report about the specifications that compact models for OTFTs and AOS TFTs must satisfy.

‘EDA tools integration and simulation performances evaluation

Report about the integration of the developed compact models in EDA tools and the evaluation of their simulation performances

Final release of TCAD software containing all new physical electrical device level models and documentation

Release of the TCAD software which will contain the new physical models for the effects governing the behavior of OTFTs and AOS TFTs Besides release of the associated documentation

Pubblicazioni

Continuous Charge-Based Current Model for Organic TFT Derived From Gaussian DOS

Autori: F. Hain, C. Lammers, F. Horst, F. Hosenfeld, B. Iñiguez, A. Kloes
Pubblicato in: International Conference on Organic Electronics, 2015
Editore: WASET

Self-consistent parameter extraction method for organic-field effect transistors with power-law dependent mobility

Autori: Sungyeop Jung, Vincent Mosser, Yvan Bonnassieux and Gilles Horowitz
Pubblicato in: Material Research Society Fall Meeting, 2015
Editore: Cambridge university press

Charge-based Modelling of the Channel Current in Organic Field Effect Transistors Considering Injection Effects

Autori: F. Hain, C. Lammers, F. Hosenfeld, Hagen Klauk, Ute Zschieschang, B. Iñiguez, A. Kloes
Pubblicato in: Electrochemical Society Meeting, Chicago, 2015
Editore: ECS Transactions

Characterization and modeling of temperature effects in Amorphous Oxide TFTs

Autori: B. Iñiguez, O. Moldovan, A. Cerdeira and M. Estrada
Pubblicato in: 2017
Editore: IEEE Electron Devices Society, University of Cambridge

Low-frequency noise modelin in orgànic and IGZO TFTs

Autori: B. Iñiguez, G. Uriarte, W. E. Muhea and T. Gneiting
Pubblicato in: MOS-AK Workshop, 2018
Editore: Wladek Gabrinski (EPFL)

esign Oriented Modeling of TFTs for Flexible Electronics,” 8th International Conference on CAD for TFT transistors (CAD-TFT)

Autori: B. Iñiguez
Pubblicato in: 8th International Conference on CAD for TFT transistors (CAD-TFT),, 2018
Editore: IEEE Electron Devices Society

Analytical modeling of non-linear injection effects in organic TFT

Autori: A. Kloes, M. Graef, F. Hain, H. Klauk, J. Pruefer
Pubblicato in: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017
Editore: IEEE Electron Devices Society, University of Cambridge

Realistic Small-Signal AC Simulation of a Bottom-Gate OTFT

Autori: M. Graef, J. Pruefer, A. Kloes
Pubblicato in: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017
Editore: IEEE Electron Devices Society, University of Cambridge

Mathematical and Semi-Physical Compact Modeling for Emerging Technologies

Autori: Y. Courant, A. Nathan, F. Mohamed
Pubblicato in: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017
Editore: IEEE Electron Devices Society, University of Cambridge

Modelling of TFT s-Parameters and its Impact on Cut-Off Frequency Extraction

Autori: X. Chen
Pubblicato in: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017
Editore: IEEE Electron Devices Society, University of Cambridge

Modelling Diode Reverse Recovery for Wireless Power Transfer

Autori: P. Fan, F. Mohamed, A. Nathan
Pubblicato in: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017
Editore: IEEE Electron Devices Society, University of Cambridge

A unified charge-based TFT core compact model

Autori: S. Mijalkovic
Pubblicato in: International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017
Editore: IEEE Electron Devices Society, University of Cambridge

Guidelines for robust compact model coding with Verilog-A

Autori: S. Mijalkovic
Pubblicato in: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017
Editore: IEEE Electron Devices Society, University of Cambridge

Charge-Based Compact Model for DC Current in Organic TFT Including Non-Linear Injection Effects with a Close Link to Electrical Device Parameters

Autori: A. Kloes, F. Hain, M. Graef, B. Iñiguez
Pubblicato in: Proceedings 231st ECS Meeting, New Orleans, 2017 (invited), 2017
Editore: ECS The Electrochemical Society

Performant Physical and Spice Model of Organic TFT

Autori: Y. Bonnassieux
Pubblicato in: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017
Editore: IEEE Electron Devices Society, University of Cambridge

Design Tools Challenges for Large Area Electronics

Autori: A. Nejim
Pubblicato in: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017
Editore: IEEE Electron Devices Society, University of Cambridge

Physics-Based Compact Model for Organic Thin-Film Transistors with a Universal Charge Expression for Quasi-Static Operation

Autori: A. Kloes, J. Pruefer, J. Leise, G. Darbandy, and H. Klauk
Pubblicato in: 235st ECS Meeting, 2019
Editore: The Electrochemical Society

Compact Modeling of I-V and C-V Characteristics in OTFTs from 125K to 350K,

Autori: B. Iniguez, H. Cortes-Ordonez, A. Cerdeira, M. Estrada, S. Jacob, C. Haddad, G. Ghibaudo, and F. Mohamed
Pubblicato in: 235th ECS Meeting, 2019
Editore: The Electrochemical Society

Simulation of CdSe Based Quantum Dot Hybrid Light Emitting Diodes Using Tcad Continuous Models

Autori: R. Grassi, I. Arroyo, B. Iñiguez, T. Drevon, A. Plews, S. Chourou, M. Townsend, and A. Nejim
Pubblicato in: 235st ECS Meeting, 2019
Editore: ECS The Electrochemical Society

Compact Modeling of Non-Linear Contact Resistance in Staggered and Coplanar Organic Thin-Film Transistors

Autori: Jakob Pruefer, Benjamin Iñiguez, Hagen Klauk, Alexander Kloes
Pubblicato in: Proceedings ICOE 2018, 2018
Editore: Université de Bordeaux

UMEM based 1/f noise model for amorphous ESL IGZO TFTs

Autori: W. E. Muhea, T. Gneiting, B. Iñiguez
Pubblicato in: 1st Latin American Electron Devices Conference, 2019
Editore: IEEE Electron Devices Society

Parameter extraction and modeling of OTFTS from 150K to 300K

Autori: Harold Cortes-Ordonez, Clara Haddad, Stephanie Jacob, Gerad Ghibaudo, Firas Mohamed, Magali Estrada, Antonio Cerdeira and Benjamin Iñiguez
Pubblicato in: 1st Latin American Electron Devices Conference, 2018
Editore: IEEE Electron Devices Society

Charge-Based DC/AC Compact Modeling of Organic TFTs

Autori: A. Kloes, Jakob Pruefer, Jakob Leise, Ghader Darbandy
Pubblicato in: 2018 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2018
Editore: IEEE Electron Devices Society

Parameter extraction method for disordered organic field-effect transistors

Autori: Sungyeop Jung, Vincent Mosser, Yvan Bonnassieux, Gilles Horowitz
Pubblicato in: The Polymer Society of Korea Spring Meeting, 2017
Editore: The Polymer Society of Korea

Impact of mechanical deformation on flexible thin film transistor performance

Autori: A. Nejim
Pubblicato in: 2018 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2018
Editore: IEEE Electron Devices Society

Strong physical background in OTFT compact model

Autori: Y. Bonnassieux
Pubblicato in: 2018 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2018
Editore: IEEE Electron Devices Society

Oxide Electronics

Autori: A Nathan
Pubblicato in: 2018 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2018
Editore: IEEE Electron Devices Society

Device-Circuit Interactions in Oxide TFT Low Power Circuits and Systems (invited)

Autori: A Nathan
Pubblicato in: IEEE Nanotechnology Materials and Devices Conference (NMDC), 2018
Editore: IEEE

Transparent and Oxide Nano-Electronics

Autori: A. Nathan
Pubblicato in: IEEE International Flexible Electronics Technology Conference (invited), 2018
Editore: IEEE

Physical SPICE Model of Organic Thin Film Transistor

Autori: Y. Bonnassieux, S. Jung, and G. Horowitz
Pubblicato in: Book of Abstracts of the 231 Electrochemical Society (ECS) Meeting, 2017
Editore: ECS - The Electrochemical Society

Ultralow power subthreshold inorganic and organic thin film transistors

Autori: C Jiang, A. Nathan
Pubblicato in: LOPEC 2018, 2018
Editore: oe-a Organic and Printed Electronics Association

Compact modeling and parameter extraction of Amorphous Oxide TFTs

Autori: B Iñiguez
Pubblicato in: IEEE EDS Mini-Colloquium, Spanish Conference on Electron Devices (invited), 2018
Editore: *

TFT Modelling for Circuits Simulation

Autori: A. Nathan, X. Cheng, G. Yao, and S. Lee
Pubblicato in: International Thin-film Transistor Conference (ITC) 2015, Paris, France, Feb. 2015, 2015
Editore: T. Mohammed-Brahim (Rennes 1 University, France)

Charge-Based Current Model of Organic TFT for All Operation Regions with a Close Link to Electrical Device Parameters

Autori: A. Kloes, F. Hain, M. Graef, S. Jacob, B. Iniguez
Pubblicato in: Workshop on Flexible Electronics 2016, Tarragona (Spain), 2016
Editore: B. Iñiguez

Defining the injection barrier at metal/organic semiconductor interface with a Gaussian density-of-states

Autori: Sungyeop Jung, Chang-Hyun Kim, Yvan Bonnassieux and Gilles Horowitz
Pubblicato in: International Thin-Film Transistor Conference (ITC), Rennes, France, February 26-27 (2015), 2015
Editore: T. Mohammed-Brahim (Rennes 1 University, France)

Threshold Voltage and Conduction Mechanisms in Disordered Semiconductor-based Thin Film Transistors

Autori: S. Lee, A. Nathan
Pubblicato in: 7th International Conference on CAD for TFT transistors, Beijing (China) October 2015, 2015
Editore: Information not available

Analytically correlated charge transport and injection in solution-processed organic field-effect transistors

Autori: C.-H. Kim, S. Jung, Y. Bonnassieux, J. E. Anthony, I. Kymissis, M.-H. Yoon, and G. Horowitz
Pubblicato in: European Conference on Molecular Electronics (ECME) 2015, 2015
Editore: Paolo Samorì

Closed-Form Charge-Based Current Model of Organic TFT Including Non-Linear Injection Effects

Autori: A. Kloes, F. Hain, M. Graef, B. Iniguez
Pubblicato in: MOS-AK ESSDERC/ESSCIRC Workshop, Lausanne, 2016, 2016
Editore: Wladek Grabinski

Ultra-thin gate dielectric for organic field-effect transistors

Autori: M. Albariqi, T. Alhathal, S. Jung, Y. Bonnassieux and G. Zucchi
Pubblicato in: International Thin-Film Transistor Conference (ITC), Rennes, France, February 26-27 (2015), 2015
Editore: T. Mohammed-Brahim (Rennes 1 University, France)

Oxide Semiconductor TFT Technology for Circuits and Systems”, 7th International Conference on CAD for TFT transistors

Autori: A. Nathan
Pubblicato in: 7th International Conference on CAD for TFT transistors 2016, 2016
Editore: Information not available

Modeling organic field effect-transistors with power-law dependent mobility and contact resistance

Autori: S. Jung, J. W. Jin, V. Mosser, Y. Bonnassieux and G. Horowitz
Pubblicato in: International Thin-Film Transistor Conference (ITC) 2016, 2016
Editore: Han-Ping D. Shieh (National Chiao Tung University, Taiwan)

Gate bias dependence of mobility in organic field-effect transistors with Gaussian density-ofstates

Autori: S. Jung, J. W. Jin, Y. Bonnassieux and G. Horowitz
Pubblicato in: International Conference on Organic Electronics (ICOE), Bratislava, Slovakia, June 13-15 (2016), 2016
Editore: Martin Weis

Design Tools for TFT Circuits and Systems

Autori: A. Nathan
Pubblicato in: 7th International Conference on CAD for TFT transistors, Beijing (China) October 2015, 2015
Editore: Information not available

TCAD for Compact Model Development Get Real”, 7th International Conference on CAD for TFT transistors

Autori: A. Nejim
Pubblicato in: 7th International Conference on CAD for TFT transistors, Beijing (China) October 2015, 2015
Editore: Information not available

N-type organic field-effect transistors with high performance and low operation voltage

Autori: S. Jung, M. Al-Bariqi, G. Gruntz, Y. Nicolas, L. Hirsch, T. Toupance, Y. Bonnassieux and G. Horowitz
Pubblicato in: International Conference on Organic Electronics (ICOE), Erlangen, Germany, June 15-17 (2015), 2015
Editore: WASET

Recent Progress in TFT Compact Modeling and Parameter Extraction Techniques

Autori: B. Iñiguez
Pubblicato in: 7th International Conference on CAD for TFT transistors, Beijing (China) October 2015, 2015
Editore: Information not available

Oxide thin film transistor technology: Capturing device-circuit interactions

Autori: Arokia Nathan, Sungsik Lee, Sanghun Jeon, Reza Chaji
Pubblicato in: 2015 IEEE International Electron Devices Meeting (IEDM), 2015, Pagina/e 6.7.1-6.7.4, ISBN 978-1-4673-9894-7
Editore: IEEE
DOI: 10.1109/IEDM.2015.7409643

Fundamental difference in the electrical characteristics of organic rectifying diodes under non-degenerate and degenerate regime related with a Gaussian density-of-states

Autori: S. Jung, Y. Bonnassieux and Gi- Horowitz
Pubblicato in: European Materials Research Society Spring Meeting (E-MRS), Lille, France, May 11-15 (2015), 2015
Editore: European Materials Research Society

Large Area Electronics: From Devices to Circuits and Systems

Autori: A. Nathan
Pubblicato in: International Conference on Electrical & Electronic Technology, Selangor, Malaysia, August 2016, 2016
Editore: Universiti Putra Malaysia

Device-Circuit Interactions in Thin Film Transistor Circuits and Systems

Autori: X. Cheng, S. Lee, A. Nathan
Pubblicato in: International Thin-Film Transistor Conference (ITC), Hsinchu, Taiwan, February 25-26 (2016), 2016
Editore: National Chiao Tung University

Modeling the variation of threshold voltage, mobility factor and saturation coefficient in amorphous Indium-Gallium-Zinc Oxide thin film transistors

Autori: Y. Hernandez-Barrios, F. Avila, M. Estrada, A. Cerdeira, O. Moldovan, B. Iniguez, R. Picos
Pubblicato in: 2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE), 2016, Pagina/e 1-4, ISBN 978-1-5090-3511-3
Editore: IEEE
DOI: 10.1109/ICEEE.2016.7751186

Characterization and modeling of Organic and Oxide Semiconductor TFTs

Autori: M. Estrada, A. Cerdeira, A. Castro-Carranza, L. F. Marsal, J. Pallarès, and B. Iñiguez
Pubblicato in: Workshop on Flexible Electronics, Tarragona (Spain), June 2016, 2016
Editore: B. Iñiguez (Univ. Rovira i Virgili, Spain)

TFT Circuit Building Blocks and Design Tools for Flexible Electronics

Autori: A. Nathan
Pubblicato in: Workshop on Flexible Electronics, Tarragona (Spain), June 29 2016, 2016
Editore: Benjamin Iniguez, Universitat Rovira i Virgili, Spain

Compact modeling approaches for organic and oxide TFTs

Autori: B. Iñiguez
Pubblicato in: Compact modeling approaches for organic and oxide TFTs,” MOS-AK Workshop, Dresden (Germany), March 18 2016., 2016
Editore: Wladek Grabinski

Charge-Based Compact Model for DC Current in Organic TFT Including Non-Linear Injection Effects with a Close Link to Electrical Device Parameter

Autori: Alexander Kloes, Franziska Hain, Michael Graef, B. Iniguez
Pubblicato in: Proceedings 231st ECS Meeting, 2017
Editore: The Electrochemical Society

Injection barrier at metal/organic semiconductor junctions with a Gaussian density-of-states

Autori: Sungyeop Jung, Chang-Hyun Kim, Yvan Bonnassieux, Gilles Horowitz
Pubblicato in: Journal of Physics D: Applied Physics, Numero 48/39, 2015, Pagina/e 395103, ISSN 0022-3727
Editore: Institute of Physics Publishing
DOI: 10.1088/0022-3727/48/39/395103

Charge density increase in submonolayer organic field-effect transistors

Autori: T. Cramer, A. Kyndiah, A. Kloes, M. Murgia, B. Fraboni, F. Biscarini
Pubblicato in: Physical Review B, Numero 91/20, 2015, ISSN 1098-0121
Editore: American Physical Society
DOI: 10.1103/PhysRevB.91.205305

Localized Tail States and Electron Mobility in Amorphous ZnON Thin Film Transistors

Autori: Sungsik Lee, Arokia Nathan, Yan Ye, Yuzheng Guo, John Robertson
Pubblicato in: Scientific Reports, Numero 5, 2015, Pagina/e 13467, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/srep13467

Transparent Semiconducting Oxide Technology for Touch Free Interactive Flexible Displays

Autori: Sungsik Lee, Sanghun Jeon, Reza Chaji, Arokia Nathan
Pubblicato in: Proceedings of the IEEE, Numero 103/4, 2015, Pagina/e 644-664, ISSN 0018-9219
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/JPROC.2015.2405767

Deep Subthreshold TFT Operation and Design Window for Analog Gain Stages

Autori: Xiang Cheng, Sungsik Lee, Arokia Nathan
Pubblicato in: IEEE Journal of the Electron Devices Society, Numero 6, 2018, Pagina/e 195-200, ISSN 2168-6734
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2018.2789579

Numerical Modeling of an Organic Electrochemical Transistor

Autori: Anna Shirinskaya, Gilles Horowitz, Jonathan Rivnay, George Malliaras, Yvan Bonnassieux
Pubblicato in: Biosensors, Numero 8/4, 2018, Pagina/e 103, ISSN 2079-6374
Editore: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/bios8040103

Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

Autori: M. Estrada, Y. Hernandez-Barrios, A. Cerdeira, F. Ávila-Herrera, J. Tinoco, O. Moldovan, F. Lime, B. Iñiguez
Pubblicato in: Solid-State Electronics, Numero 135, 2017, Pagina/e 43-48, ISSN 0038-1101
Editore: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2017.06.030

An insight to mobility parameters for AOSTFTs, when the effect of both, localized and free carriers, must be considered to describe the device behavior

Autori: Y. Hernandez-Barrios, A. Cerdeira, M. Estrada, B. Iñiguez
Pubblicato in: Solid-State Electronics, Numero 149, 2018, Pagina/e 32-37, ISSN 0038-1101
Editore: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2018.08.006

Employing Pneumatic Nozzle Printing for Controlling the Crystal Growth of Small Molecule Organic Semiconductor for Field-Effect Transistors

Autori: Shyuan Yang, Steve Park, Johannes Bintinger, Yvan Bonnassieux, John Anthony, Ioannis Kymissis
Pubblicato in: Advanced Electronic Materials, Numero 4/6, 2018, Pagina/e 1700534, ISSN 2199-160X
Editore: Wiley online
DOI: 10.1002/aelm.201700534

High-Speed Plastic Integrated Circuits: Process Integration, Design, and Test

Autori: Miguel Torres-Miranda, Andreas Petritz, Alexander Fian, Christine Prietl, Herbert Gold, Hassan Aboushady, Yvan Bonnassieux, Barbara Stadlober
Pubblicato in: IEEE Journal on Emerging and Selected Topics in Circuits and Systems, Numero 7/1, 2017, Pagina/e 133-146, ISSN 2156-3357
Editore: IEEE Circuits and Systems Society
DOI: 10.1109/jetcas.2016.2611823

Determination and modelin of Flicker Noise mechanisms in polymeric TFTs

Autori: G. Uriarte, S. Jacob, G. Ghibaudo, T. Gneiting and B. Iñiguez
Pubblicato in: Journal of Applied Physics (submitted), 2019, ISSN 0021-8979
Editore: American Institute of Physics

A complete charge-based capacitance model for IGZO TFTs

Autori: Oana Moldovan, Alejandra Castro-Carranza, Magali Estrada, Antonio Cerdeira, François Lime, Benjamin Iñiguez
Pubblicato in: IEEE Electron Device Letters (revised and re-submitted), 2019, ISSN 0741-3106
Editore: Institute of Electrical and Electronics Engineers

Parameter extraction and modeling of OTFT from 150 to 300 K

Autori: H. Cortés, S. Jacob, C. Haddad, G. Ghibaudo, F. Mohamed, M. Estrada, A. Cerdeira, B. Iñiguez
Pubblicato in: Journal of Applied Physics (submitted), 2019, ISSN 0021-8979
Editore: American Institute of Physics

Analysis of Flicker Noise in IGZO ESL TFTs

Autori: G. Uriarte, T. Gneiting and B. Iñiguez
Pubblicato in: IEEE Transactions on Electron Devices (submitted), 2019, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers

Flicker noise analysis and unified modeling for ESL a- IGZO TFTs from 298 to 333 K

Autori: W. E. Muhea, T. Gneiting, B. Iñiguez
Pubblicato in: Journal of Applied Physics (submitted, under revision), 2019, ISSN 0021-8979
Editore: American Institute of Physics

Analysis and compact modelin of gate capacitance in Organic Thin Film Transistors

Autori: H. Cortés, S. Jacob, F. Mohamed, G. Ghibaudo, B. Iñiguez
Pubblicato in: IEEE Transactions on Electron Devices (revised and re-submitted), 2019, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers

Modelling and optimization of quantum dot–based hybrid light emitting diodes using Silvaco’s software

Autori: I. Arroyo, B. Iñiguez, T. Drevon, A. Plews, A. Nejim
Pubblicato in: Journal of Applied Physics (submitted), 2019, ISSN 0021-8979
Editore: American Institute of Physics

1/f noise analysis in high mobility small-molecule Organic Thin Film Transistors (in preparation)

Autori: Wondwosen E. Muhea, K. Romanjek, X. Mescot, C. G. Theodorou, M. Charbonneau, F. Mohamed, G. Ghibaudo, B. Iñiguez
Pubblicato in: IEEE Electron Device Letters (in preparation), 2019, ISSN 0741-3106
Editore: Institute of Electrical and Electronics Engineers

A TIPS-TPDO-tetraCN-Based n -Type Organic Field-Effect Transistor with a Cross-linked PMMA Polymer Gate Dielectric

Autori: Sungyeop Jung, Mohammed Albariqi, Guillaume Gruntz, Thamer Al-Hathal, Alba Peinado, Enric Garcia-Caurel, Yohann Nicolas, Thierry Toupance, Yvan Bonnassieux, Gilles Horowitz
Pubblicato in: ACS Applied Materials & Interfaces, Numero 8/23, 2016, Pagina/e 14701-14708, ISSN 1944-8244
Editore: American Chemical Society
DOI: 10.1021/acsami.6b00480

Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain

Autori: Sungsik Lee, Arokia Nathan
Pubblicato in: Science, Numero 354/6310, 2016, Pagina/e 302-304, ISSN 0036-8075
Editore: American Association for the Advancement of Science
DOI: 10.1126/science.aah5035

A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors

Autori: Oana Moldovan, Alejandra Castro-Carranza, Antonio Cerdeira, Magali Estrada, Pedro Barquinha, Rodrigo Martins, Elvira Fortunato, Slobodan Miljakovic, Benjamin Iñiguez
Pubblicato in: Solid-State Electronics, Numero 126, 2016, Pagina/e 81-86, ISSN 0038-1101
Editore: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2016.09.011

Fundamental insights into the threshold characteristics of organic field-effect transistors

Autori: Sungyeop Jung, Chang-Hyun Kim, Yvan Bonnassieux, Gilles Horowitz
Pubblicato in: Journal of Physics D: Applied Physics, Numero 48/3, 2015, Pagina/e 035106, ISSN 0022-3727
Editore: Institute of Physics Publishing
DOI: 10.1088/0022-3727/48/3/035106

TFT Compact Modeling

Autori: Xiang Cheng, Sungsik Lee, Guangyu Yao, Arokia Nathan
Pubblicato in: Journal of Display Technology, Numero 12/9, 2016, Pagina/e 898-906, ISSN 1551-319X
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/JDT.2016.2556980

Device-Circuit Interactions and Impact on TFT Circuit-System Design

Autori: Xiang Cheng, Sungsik Lee, Reza Chaji, Arokia Nathan
Pubblicato in: IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2016, Pagina/e 1-10, ISSN 2156-3357
Editore: IEEE Circuits and Systems Society
DOI: 10.1109/JETCAS.2016.2621348

Universal Compact Model for Organic Solar Cell

Autori: Jong W. Jin, Sungyeop Jung, Yvan Bonnassieux, Gilles Horowitz, Alexandra Stamateri, Christos Kapnopoulos, Argiris Laskarakis, Stergios Logothetidis
Pubblicato in: IEEE Transactions on Electron Devices, Numero 63/10, 2016, Pagina/e 4053-4059, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2016.2598793

TFT Small Signal Model and Analysis

Autori: Xiang Cheng, Sungsik Lee, Arokia Nathan
Pubblicato in: IEEE Electron Device Letters, Numero 37/7, 2016, Pagina/e 890-893, ISSN 0741-3106
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2016.2575924

On the series resistance in staggered amorphous thin film transistors

Autori: Antonio Cerdeira, Magali Estrada, Lluis F. Marsal, Josep Pallares, Benjamín Iñiguez
Pubblicato in: Microelectronics Reliability, Numero 63, 2016, Pagina/e 325-335, ISSN 0026-2714
Editore: Elsevier BV
DOI: 10.1016/j.microrel.2016.05.005

Conduction Threshold in Accumulation-Mode InGaZnO Thin Film Transistors

Autori: Sungsik Lee, Arokia Nathan
Pubblicato in: Scientific Reports, Numero 6, 2016, Pagina/e 22567, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/srep22567

An approach to organic field-effect transistor above-threshold drains current compact modeling that provides monotonic decrease of the output conductance with drain bias increasing

Autori: V O Turin, B A Rakhmatov, C H Kim, B Iñiguez
Pubblicato in: IOP Conference Series: Materials Science and Engineering, Numero 151, 2016, Pagina/e 012044, ISSN 1757-8981
Editore: IOPScience
DOI: 10.1088/1757-899X/151/1/012044

Charge based, continuous compact model for the channel current in organic thin-film transistors for all regions of operation

Autori: Franziska Hain, Michael Graef, Benjamín Iñíguez, Alexander Kloes
Pubblicato in: Solid-State Electronics, Numero 133, 2017, Pagina/e 17-24, ISSN 0038-1101
Editore: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2017.04.002

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