R2POWER300 program, is committed to develop and manufacture a multi-KET Pilot Line setting the stages and preparatory for the future extension to 300mm of Fab facility located in Agrate Brianza (Italy) on Smart Power BCD Technology.
R2POWER300 impacts wide different market segment (Automotive, Healthcare, energy, Industrial,) however every where it's required an interface between the intelligence of an application (ex. uP, sensors, logic circuit) to the power actuator stages.
Today the Smart Power BCD products mass production is at 200mm and is composed by different BCD versions; BCD8s is the last version at 160nm 200mm wfs; BCD9s is the next evolution still at 200mm wafer and 110nm, while BCD10 will feature 90nm lithography 200mm wfs first, with the successive porting to 300mm wafers. BCD stands for Bipolar + CMOS + DMOS, and is an integrated smart power technology invented by ST in the mid ‘80s.
the 4 main pillars of R2POWER300 are WP1 - WP2 - WP3 - WP4, respectively representing:
- WP1 Technology Enablers: The goal is to prove BCD9 (110nm gate length) and BCD10 (90nm gate length) most critical technological steps portability to 300 mm, and define the main technical requirements for next generation power semiconductor relevant tools (200mm → 300 mm).
- WP2 Technology R&D: The goal is to define and develop a new Smart Power BCD Technology platform and enhance the competitiveness of Smart Power (i.e. BCD9 and BCD10).
- WP3 Packaging and 3D: The goal is to develop silver sintering die attach investigation + high density capacitors based on a new silicon approach (nano and micro structuring realizing pores having high aspect ratio).
- WP4 Applic&Techn demon. is focused on designing application demonstrator to assess the effectiveness of the technology outcomes, from WP1 WP2 WP3.
WP5 and WP6 are the Dissemination, Exploitation Standardization and Project management through all the WPs.
during the 1st year activities no main issues faced.