Descripción del proyecto
Sistemas multifuncionales de ultrabajo consumo que combinan tecnología magnética y de semiconductores
Aumenta el número de dispositivos electrónicos portátiles con circuitos cada vez más complejos que se conectan a internet. La reducción del consumo de energía es un objetivo clave de la microelectrónica, junto con el aumento del ancho de banda de las comunicaciones y la disminución de los costes de procesamiento y envasado. La memoria magnética de acceso aleatorio por transferencia de espín (STT-MRAM, por sus siglas eninglés) es una tecnología emergente de memoria de estado sólido (no volátil) más rápida y menos costosa y que consumen menos energía que las tecnologías existentes. El equipo del proyecto MAGICAL, que está centrado en la STT-MRAM y financiado por el Consejo Europeo de Investigación, pretende lograr avances revolucionarios en sistemas multifuncionales de consumo ultrabajo integrando la tecnología convencional de semiconductores complementarios de óxido metálico con la tecnología magnética. En MAGICAL se resolverán los retos pendientes en el desarrollo de STT-MRAM de menos de 20 nm y se demostrará su uso funcional y mejorará la cooperación entre las comunidades del magnetismo y la microelectrónica.
Objetivo
Spin Transfer Torque Magnetic memories (STT-MRAM) are receiving a growing R&D effort within the microelectronic industry aiming at the replacement of DRAM or SRAM at sub-20nm nodes.
MAGICAL seeks to significantly innovate through groundbreaking advances in ultra-low power multifunctional systems based on hybrid CMOS/magnetic technology. With the development of portable electronics and of the Internet of Things (IOT), more and more functions must be embedded on chips: logic/memory, sensing, communication, etc. The current hurdles with today's technology are power consumption, communication bandwidth, processing/ packaging costs. MAGICAL will demonstrate that these limitations can be largely overcome through hybrid CMOS/magnetic technology.
The project will follow three main goals:
- Firstly, we will strengthen the STT-MRAM technology by investigating two novel ideas aiming at solving two remaining difficulties in sub-20nm STT-MRAM development: the nanostructuration of magnetic tunnel junctions and the long-term data retention. This will open the path to high density (>Gbit) STT-MRAM.
-Secondly, we will demonstrate that Digital, analog (3D magnetic field sensing for orientation sensor), RF communication functions can be realized with the same baseline technology as the one developed for STT-MRAM. As a result, these three types of functions can be homogeneously integrated in a single chip, a major improvement compared to conventional heterogeneous integration. The prime benefits expected from MAGICAL are: ultralow power thanks to MRAM non volatility and on-chip computation capability, greatly improved communication functionalities (cloud as well as intrachip communication), reduced process/packaging costs.
-Thirdly, through various actions, MAGICAL will aim at narrowing the cultural gap that still exists between magnetism and microelectronics communities.
The project could definitely help the European microelectronic systems industry improve its leadership position.
Ámbito científico
- natural sciencescomputer and information sciencesinternetinternet of things
- engineering and technologymechanical engineeringvehicle engineeringautomotive engineering
- engineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringsensors
- natural sciencesphysical scienceselectromagnetism and electronicsmicroelectronics
Programa(s)
Régimen de financiación
ERC-ADG - Advanced GrantInstitución de acogida
75015 PARIS 15
Francia