Descrizione del progetto
Sistemi multifunzionali a bassissima potenza che combinano tecnologia a semiconduttore e magnetica
Il numero di dispositivi elettronici portatili con circuiti sempre più complessi che si connettono a Internet è in aumento. La riduzione del consumo di energia è un obiettivo chiave della microelettronica, insieme all’aumento della larghezza di banda di comunicazione e alla riduzione dei costi di lavorazione e imballaggio. La memoria magnetica ad accesso casuale con momento torcente indotto da trasferimento di spin (STT-MRAM) è una tecnologia emergente di memoria a stato solido (non volatile) più veloce e meno costosa e dispendiosa in termini energetici rispetto alle soluzioni esistenti. Incentrato sulla STT-MRAM, il progetto MAGICAL, finanziato dal Consiglio europeo della ricerca, prevede di compiere progressi rivoluzionari nei sistemi multifunzionali a bassissima potenza integrando la tecnologia convenzionale dei semiconduttori complementari a ossido di metallo con la tecnologia magnetica. MAGICAL risolverà le sfide più grandi nello sviluppo di STT-MRAM inferiori a 20 nm, dimostrandone l’uso funzionale e migliorando la cooperazione tra le comunità del magnetismo e della microelettronica.
Obiettivo
Spin Transfer Torque Magnetic memories (STT-MRAM) are receiving a growing R&D effort within the microelectronic industry aiming at the replacement of DRAM or SRAM at sub-20nm nodes.
MAGICAL seeks to significantly innovate through groundbreaking advances in ultra-low power multifunctional systems based on hybrid CMOS/magnetic technology. With the development of portable electronics and of the Internet of Things (IOT), more and more functions must be embedded on chips: logic/memory, sensing, communication, etc. The current hurdles with today's technology are power consumption, communication bandwidth, processing/ packaging costs. MAGICAL will demonstrate that these limitations can be largely overcome through hybrid CMOS/magnetic technology.
The project will follow three main goals:
- Firstly, we will strengthen the STT-MRAM technology by investigating two novel ideas aiming at solving two remaining difficulties in sub-20nm STT-MRAM development: the nanostructuration of magnetic tunnel junctions and the long-term data retention. This will open the path to high density (>Gbit) STT-MRAM.
-Secondly, we will demonstrate that Digital, analog (3D magnetic field sensing for orientation sensor), RF communication functions can be realized with the same baseline technology as the one developed for STT-MRAM. As a result, these three types of functions can be homogeneously integrated in a single chip, a major improvement compared to conventional heterogeneous integration. The prime benefits expected from MAGICAL are: ultralow power thanks to MRAM non volatility and on-chip computation capability, greatly improved communication functionalities (cloud as well as intrachip communication), reduced process/packaging costs.
-Thirdly, through various actions, MAGICAL will aim at narrowing the cultural gap that still exists between magnetism and microelectronics communities.
The project could definitely help the European microelectronic systems industry improve its leadership position.
Campo scientifico
- natural sciencescomputer and information sciencesinternetinternet of things
- engineering and technologymechanical engineeringvehicle engineeringautomotive engineering
- engineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringsensors
- natural sciencesphysical scienceselectromagnetism and electronicsmicroelectronics
Programma(i)
Argomento(i)
Meccanismo di finanziamento
ERC-ADG - Advanced GrantIstituzione ospitante
75015 PARIS 15
Francia