Novel Quantum Emitters monolithically grown on Si, Ge and III-V substrates

Risultati finali

Presentation at SPIE Photonics West or MRS Fall meetings or similar.

School: “Nano Photonics”
"School ""Introduction to Quantum Information"""
Presentation at meetings III

* Presentation at SPIE Photonics West or MRS Fall meetings or similar * Publication on Journals

School: “Quantum Dots: from growth to fundamental properties”
Supervisory Board

Appointment of Supervisory board

Third International Conference on “Droplet Quantum Dots – Physics and Applications”
Workshop. Quantum Optical Devices and Circuits
Workshop. Droplet based Quantum Nanostructures and Devices
Presentation at meetings II

* Presentation at SPIE Photonics West or MRS Fall meetings or similar * Publication on Journals

Exploitation and Dissemination Plan

Document describing the exploitation and dissemination plan of 4PHOTON

Training Plan

Definition of the training plan of the 4PHOTON ESRs

Individual reports on the quality of the ESR secondments

Website

Creation of the 4PHOTON website

Pubblicazioni

Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A

Autori: Artur Tuktamyshev, Alexey Fedorov, Sergio Bietti, Shiro Tsukamoto, Roberto Bergamaschini, Francesco Montalenti, Stefano Sanguinetti
Pubblicato in: Nanomaterials, Numero 10/8, 2020, Pagina/e 1512, ISSN 2079-4991
Editore: MDPI
DOI: 10.3390/nano10081512

Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates

Autori: Artur Tuktamyshev, Alexey Fedorov, Sergio Bietti, Shiro Tsukamoto, Stefano Sanguinetti
Pubblicato in: Scientific Reports, Numero 9/1, 2019, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/s41598-019-51161-5

Correlations between optical properties and Voronoi-cell area of quantum dots

Autori: Matthias C. Löbl, Liang Zhai, Jan-Philipp Jahn, Julian Ritzmann, Yongheng Huo, Andreas D. Wieck, Oliver G. Schmidt, Arne Ludwig, Armando Rastelli, Richard J. Warburton
Pubblicato in: Physical Review B, Numero 100/15, 2019, ISSN 2469-9950
Editore: American Physical Society
DOI: 10.1103/physrevb.100.155402

Shape-Dependent Stark Shift and Emission-Line Broadening of Quantum Dots and Rings

Autori: Christian Heyn, Leonardo Ranasinghe, Michael Zocher, Wolfgang Hansen
Pubblicato in: The Journal of Physical Chemistry C, Numero 124/36, 2020, Pagina/e 19809-19816, ISSN 1932-7447
Editore: American Chemical Society
DOI: 10.1021/acs.jpcc.0c05043

Probing the local electronic structure of isovalent Bi atoms in InP

Autori: C. M. Krammel, A. R. da Cruz, M. E. Flatté, M. Roy, P. A. Maksym, L. Y. Zhang, K. Wang, Y. Y. Li, S. M. Wang, P. M. Koenraad
Pubblicato in: Physical Review B, Numero 101/2, 2020, ISSN 2469-9950
Editore: American Physical Society
DOI: 10.1103/physrevb.101.024113

Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition

Autori: Ioannis Paradisanos, Shivangi Shree, Antony George, Nadine Leisgang, Cedric Robert, Kenji Watanabe, Takashi Taniguchi, Richard J. Warburton, Andrey Turchanin, Xavier Marie, Iann C. Gerber, Bernhard Urbaszek
Pubblicato in: Nature Communications, Numero 11/1, 2020, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/s41467-020-16023-z

Guide to optical spectroscopy of layered semiconductors

Autori: Shivangi Shree, Ioannis Paradisanos, Xavier Marie, Cedric Robert, Bernhard Urbaszek
Pubblicato in: Nature Reviews Physics, Numero 3/1, 2021, Pagina/e 39-54, ISSN 2522-5820
Editore: Springer Nature
DOI: 10.1038/s42254-020-00259-1

Fabrication of spectrally sharp Si-based dielectric resonators: combining etaloning with Mie resonances

Autori: D. Toliopoulos, M. Khoury, M. Bouabdellaoui, N. Granchi, J.-B. Claude, A. Benali, I. Berbezier, D. Hannani, A. Ronda, J. Wenger, M. Bollani, M. Gurioli, S. Sanguinetti, F. Intonti, M. Abbarchi
Pubblicato in: Optics Express, Numero 28/25, 2020, Pagina/e 37734, ISSN 1094-4087
Editore: Optical Society of America
DOI: 10.1364/oe.409001

Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates

Autori: A. Tuktamyshev, A. Fedorov, S. Bietti, S. Vichi, K. D. Zeuner, K. D. Jöns, D. Chrastina, S. Tsukamoto, V. Zwiller, M. Gurioli, S. Sanguinetti
Pubblicato in: Applied Physics Letters, Numero 118/13, 2021, Pagina/e 133102, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0045776

Low-noise GaAs quantum dots for quantum photonics

Autori: Liang Zhai, Matthias C. Löbl, Giang N. Nguyen, Julian Ritzmann, Alisa Javadi, Clemens Spinnler, Andreas D. Wieck, Arne Ludwig, Richard J. Warburton
Pubblicato in: Nature Communications, Numero 11/1, 2020, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/s41467-020-18625-z

Giant Stark splitting of an exciton in bilayer MoS2

Autori: Nadine Leisgang, Shivangi Shree, Ioannis Paradisanos, Lukas Sponfeldner, Cedric Robert, Delphine Lagarde, Andrea Balocchi, Kenji Watanabe, Takashi Taniguchi, Xavier Marie, Richard J. Warburton, Iann C. Gerber, Bernhard Urbaszek
Pubblicato in: Nature Nanotechnology, Numero 15/11, 2020, Pagina/e 901-907, ISSN 1748-3387
Editore: Nature Publishing Group
DOI: 10.1038/s41565-020-0750-1

1GHz clocked distribution of electrically generated entangled photon pairs

Autori: Ginny Shooter, Zi-Heng Xiang, Jonathan R. A Müller, Joanna Skiba-Szymanska, Jan Huwer, Jonathan Griffiths, Thomas Mitchell, Matthew Anderson, Tina Müller, Andrey B. Krysa, R. Mark Stevenson, Jon Heffernan, David A. Ritchie, Andrew J. Shields
Pubblicato in: Optics Express, Numero 28/24, 2020, Pagina/e 36838, ISSN 1094-4087
Editore: Optical Society of America
DOI: 10.1364/oe.405466

High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots

Autori: Sergio Bietti, Francesco Basso Basset, Artur Tuktamyshev, Emiliano Bonera, Alexey Fedorov, Stefano Sanguinetti
Pubblicato in: Scientific Reports, Numero 10/1, 2020, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/s41598-020-62248-9

Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution

Autori: Francesco Basso Basset, Sergio Bietti, Artur Tuktamyshev, Stefano Vichi, Emiliano Bonera, Stefano Sanguinetti
Pubblicato in: Journal of Applied Physics, Numero 126/2, 2019, Pagina/e 024301, ISSN 0021-8979
Editore: American Institute of Physics
DOI: 10.1063/1.5097277

High optical quality of MoS 2 monolayers grown by chemical vapor deposition

Autori: Shivangi Shree, Antony George, Tibor Lehnert, Christof Neumann, Meryem Benelajla, Cedric Robert, Xavier Marie, Kenji Watanabe, Takashi Taniguchi, Ute Kaiser, Bernhard Urbaszek, Andrey Turchanin
Pubblicato in: 2D Materials, Numero 7/1, 2020, Pagina/e 015011, ISSN 2053-1583
Editore: IOP Publishing
DOI: 10.1088/2053-1583/ab4f1f

Radiative Auger process in the single-photon limit

Autori: Matthias C. Löbl, Clemens Spinnler, Alisa Javadi, Liang Zhai, Giang N. Nguyen, Julian Ritzmann, Leonardo Midolo, Peter Lodahl, Andreas D. Wieck, Arne Ludwig, Richard J. Warburton
Pubblicato in: Nature Nanotechnology, Numero 15/7, 2020, Pagina/e 558-562, ISSN 1748-3387
Editore: Nature Publishing Group
DOI: 10.1038/s41565-020-0697-2

Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots

Autori: R. S. R. Gajjela, A. L. Hendriks, A. Alzeidan, T. F. Cantalice, A. A. Quivy, P. M. Koenraad
Pubblicato in: Physical Review Materials, Numero 4/11, 2020, ISSN 2475-9953
Editore: American Physical Society
DOI: 10.1103/physrevmaterials.4.114601

Large-range frequency tuning of a narrow-linewidth quantum emitter

Autori: Liang Zhai, Matthias C. Löbl, Jan-Philipp Jahn, Yongheng Huo, Philipp Treutlein, Oliver G. Schmidt, Armando Rastelli, Richard J. Warburton
Pubblicato in: Applied Physics Letters, Numero 117/8, 2020, Pagina/e 083106, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0017995

Active reset of a radiative cascade for entangled-photon generation beyond the continuous-driving limit

Autori: Jonathan R. A. Müller, R. Mark Stevenson, Joanna Skiba-Szymanska, Ginny Shooter, Jan Huwer, Ian Farrer, David A. Ritchie, Andrew J. Shields
Pubblicato in: Physical Review Research, Numero 2/4, 2020, ISSN 2643-1564
Editore: American Physical Society
DOI: 10.1103/physrevresearch.2.043292

Checked patterned elemental distribution in AlGaAs nanowire branches via vapor–liquid–solid growth

Autori: Giorgos Boras, Xuezhe Yu, H. Aruni Fonseka, Dong Zhang, Haotian Zeng, Ana M. Sanchez, Huiyun Liu
Pubblicato in: Nanoscale, Numero 12/29, 2020, Pagina/e 15711-15720, ISSN 2040-3364
Editore: Royal Society of Chemistry
DOI: 10.1039/d0nr02577a

Solid-State Dewetting Dynamics of Amorphous Ge Thin Films on Silicon Dioxide Substrates

Autori: Dimosthenis Toliopoulos, Alexey Fedorov, Sergio Bietti, Monica Bollani, Emiliano Bonera, Andrea Ballabio, Giovanni Isella, Mohammed Bouabdellaoui, Marco Abbarchi, Shiro Tsukamoto, Stefano Sanguinetti
Pubblicato in: Nanomaterials, Numero 10/12, 2020, Pagina/e 2542, ISSN 2079-4991
Editore: MDPI
DOI: 10.3390/nano10122542

Luminescence from Droplet-Etched GaAs Quantum Dots at and Close to Room Temperature

Autori: Leonardo Ranasinghe, Christian Heyn, Kristian Deneke, Michael Zocher, Roman Korneev, Wolfgang Hansen
Pubblicato in: Nanomaterials, Numero 11/3, 2021, Pagina/e 690, ISSN 2079-4991
Editore: MDPI
DOI: 10.3390/nano11030690

Electrically tunable dynamic nuclear spin polarization in GaAs quantum dots at zero magnetic field

Autori: M. Manca, G. Wang, T. Kuroda, S. Shree, A. Balocchi, P. Renucci, X. Marie, M. V. Durnev, M. M. Glazov, K. Sakoda, T. Mano, T. Amand, B. Urbaszek
Pubblicato in: Applied Physics Letters, Numero 112/14, 2018, Pagina/e 142103, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/1.5024619

Resonance fluorescence from an atomic-quantum-memory compatible single photon source based on GaAs droplet quantum dots

Autori: Laxmi Narayan Tripathi, Yu-Ming He, Łukasz Dusanowski, Piotr Andrzej Wroński, Chao-Yang Lu, Christian Schneider, Sven Höfling
Pubblicato in: Applied Physics Letters, Numero 113/2, 2018, Pagina/e 021102, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/1.5034402

Exciton States in Monolayer MoSe 2 and MoTe

Autori: B. Han, C. Robert, E. Courtade, M. Manca, S. Shree, T. Amand, P. Renucci, T. Taniguchi, K. Watanabe, X. Marie, L. E. Golub, M. M. Glazov, B. Urbaszek
Pubblicato in: Physical Review X, Numero 8/3, 2018, ISSN 2160-3308
Editore: American Physical Society
DOI: 10.1103/PhysRevX.8.031073

Observation of exciton-phonon coupling in MoSe 2 monolayers

Autori: S. Shree, M. Semina, C. Robert, B. Han, T. Amand, A. Balocchi, M. Manca, E. Courtade, X. Marie, T. Taniguchi, K. Watanabe, M. M. Glazov, B. Urbaszek
Pubblicato in: Physical Review B, Numero 98/3, 2018, ISSN 2469-9950
Editore: APS Physics
DOI: 10.1103/PhysRevB.98.035302

Enhanced light-matter interaction in an atomically thin semiconductor coupled with dielectric nano-antennas

Autori: L. Sortino, P. G. Zotev, S. Mignuzzi, J. Cambiasso, D. Schmidt, A. Genco, M. Aßmann, M. Bayer, S. A. Maier, R. Sapienza, A. I. Tartakovskii
Pubblicato in: Nature Communications, Numero 10/1, 2019, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/s41467-019-12963-3

Physical Origins of Extreme Cross-Polarization Extinction in Confocal Microscopy

Autori: Meryem Benelajla, Elena Kammann, Bernhard Urbaszek, Khaled Karrai
Pubblicato in: Physical Review X, Numero 11/2, 2021, ISSN 2160-3308
Editore: American Physical Society
DOI: 10.1103/physrevx.11.021007

Revealing exciton masses and dielectric properties of monolayer semiconductors with high magnetic fields

Autori: M. Goryca, J. Li, A. V. Stier, T. Taniguchi, K. Watanabe, E. Courtade, S. Shree, C. Robert, B. Urbaszek, X. Marie, S. A. Crooker
Pubblicato in: Nature Communications, Numero 10/1, 2019, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/s41467-019-12180-y

Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates

Autori: Giorgos Boras, Xuezhe Yu, H. Aruni Fonseka, George Davis, Anton V. Velichko, James A. Gott, Haotian Zeng, Shiyao Wu, Patrick Parkinson, Xiulai Xu, David Mowbray, Ana M. Sanchez, Huiyun Liu
Pubblicato in: The Journal of Physical Chemistry C, 2021, ISSN 1932-7447
Editore: American Chemical Society
DOI: 10.1021/acs.jpcc.1c03680

Interlayer excitons in bilayer MoS 2 with strong oscillator strength up to room temperature

Autori: Iann C. Gerber, Emmanuel Courtade, Shivangi Shree, Cedric Robert, Takashi Taniguchi, Kenji Watanabe, Andrea Balocchi, Pierre Renucci, Delphine Lagarde, Xavier Marie, Bernhard Urbaszek
Pubblicato in: Physical Review B, Numero 99/3, 2019, ISSN 2469-9950
Editore: American Physical Society
DOI: 10.1103/physrevb.99.035443

Risultati finali

Pubblicazioni

Condividi questa pagina

Scarica