RADiation and reliability challenges for electronics used in Space, Avionics, on the Ground and at Accelerators

Risultati finali

Facility dosimetry procedure and dedicated monitors

Facility dosimetry procedure and dedicated monitors (ESR 1-3 and ESR5)

Documentation of test setups practical for mixed-facilities

Documentation of test setups practical for mixed-facilities (ESR3 collaborating with WP2 and WP3 ESRs)

Summary of RHA approaches in European irradiation test

Summary of RHA approaches in European irradiation test facilities (all WP1 ESRs)

Final Report on system level test methodology compared with component test results

Final Report on system level test methodology compared with component test results (ESRs12-14 with WP1 and 2)

Handbook of test methodologies and applicable facilities for advanced systems

Handbook of test methodologies and applicable facilities for advanced systems (input from ESR1-4/9/10/12-14)

Design status report and prototype of the rad-tolerant CMOS imager

Design status report and prototype of the rad-tolerant CMOS imager (ESR11 with tools/techniques from ESR9/10)

Final PhD thesis or respective status report available, approved by TO/EC and stored on RADSAGA network
Risk assessment and application procedure of system test methodologies

Risk assessment and application procedure of system test methodologies (ESRs 12-14)

Evaluation report of 14 MeV test methodology

Evaluation report of 14 MeV test methodology (ESR15 and ESR13 with input from ESR1 and ESR5)

Progress Report on system level test methodology compared with component test results

Progress Report on system level test methodology compared with component test results (ESRs12-14 with WP1 and 2)

Status report on coupled effects and predictions tools

Status report on coupled effects and predictions tools (ESR7 and 8)

Collection and documentation of testing tools and facilities required for system level tests

Collection and documentation of testing tools and facilities required for system level testing (ESR13 and ESR14)

Closing meeting and RADSAGA summary report
Combined status report on modelling techniques and tools

Combined status report on modelling techniques and tools (SEU, SET and SEL) (ESR9 and ESR10)

Report on hardening by design rules, tools and modelling

Report on hardening by design rules, tools and modelling (ESR6 with ESR8 and ESR9/10 [synergistic effects])

Design status report and prototype of SRAM radiation monitor

Design status report and prototype of SRAM radiation monitor (ESR5 with ESR4 for modelling and environments)

RADSAGA support material and presentations made available for High-School teacher training
Initial training event completed and evaluated in order to feed into future RADSAGA generalized training
Feedback collected from public lecture and discussion tables and included in remaining outreach planning

Feedback collected from first public presentation and discussion tables; included in remaining outreach planning

Final press release on RADSAGA findings, attributed awards and all public relevant information

Final press release on RADSAGA findings attributed awards and all public relevant information

Introduction to Intellectual Property Workshop
Elaboration of project technology assessment fact sheets

Elaboration of project technology assessment factsheets

Web site and social media interfaces available
Collected and structured training material to allow for future RADSAGA European School on Radiation Effects in Electronics
RADECS short-course developed, delivered and evaluated
Technical status review of all ESR projects is provided

Technical status review of all ESR projects is provided (at the same time as D7.2 and milestone 6)

Pubblicazioni

A Review of Semiconductor Based Ionising Radiation Sensors Used in Harsh Radiation Environments and Their Applications

Autori: Arijit Karmakar; Jialei Wang; Jeffrey Prinzie; Valentijn De Smedt; Paul Leroux
Pubblicato in: Radiation, Vol 1, Iss 18, Pp 194-217 (2021), Numero 9, 2021, ISSN 2673-592X
Editore: MDPI
DOI: 10.3390/radiation1030018

Single-Event Latchup sensitivity: Temperature effects and the role of the collected charge

Autori: S. Guagliardo, F. Wrobel, Y.Q. Aguiar, J.-L. Autran, P. Leroux, F. Saigné, V. Pouget, A.D. Touboul
Pubblicato in: Microelectronics Reliability, Numero 119, 2021, Pagina/e 114087, ISSN 0026-2714
Editore: Elsevier BV
DOI: 10.1016/j.microrel.2021.114087

Radiation qualification by means of the system-level testing: opportunities and limitations

Autori: Rajkowski, T.; Saigné, F.; Wang, P.-X
Pubblicato in: Electronics 2022, 11(3), 378, 2022, ISSN 2079-9292
Editore: mdpi books
DOI: 10.3390/electronics11030378

Radiation hardening efficiency of gate sizing and transistor stacking based on standard cells

Autori: Y.Q. Aguiar, F. Wrobel, S. Guagliardo, J.-L. Autran, P. Leroux, F. Saigné, A.D. Touboul, V. Pouget
Pubblicato in: Microelectronics Reliability, Numero 100-101, 2019, Pagina/e 113457, ISSN 0026-2714
Editore: Elsevier BV
DOI: 10.1016/j.microrel.2019.113457

Comparing analytical and Monte-Carlo-based simulation methods for logic gates SET sensitivity evaluation

Autori: R.B. Schvittz, Y.Q. Aguiar, F. Wrobel, J.-L. Autran, L.S. Rosa, P.F. Butzen
Pubblicato in: Microelectronics Reliability, Numero 114, 2020, Pagina/e 113871, ISSN 0026-2714
Editore: Elsevier BV
DOI: 10.1016/j.microrel.2020.113871

The Pion Single-Event Effect Resonance and its Impact in an Accelerator Environment

Autori: Andrea Coronetti, Ruben Garcia Alia, Matteo Cecchetto, Wojtek Hajdas, Daniel Soderstrom, Arto Javanainen, Frederic Saigne
Pubblicato in: IEEE Transactions on Nuclear Science, Numero 67/7, 2020, Pagina/e 1606-1613, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2020.2978228

Measurements of ultra-high energy lead ions using silicon and diamond detectors

Autori: Carlo Cazzaniga, Maria Kastriotou, Rubén García Alía, Pablo Fernandez-Martinez, Vanessa Wyrwoll, Triestino Minniti, Christopher D. Frost
Pubblicato in: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Numero 985, 2021, Pagina/e 164671, ISSN 0168-9002
Editore: Elsevier BV
DOI: 10.1016/j.nima.2020.164671

Analysis of SET propagation in a system in package point of load converter

Autori: T. Rajkowski, F. Saigné, V. Pouget, F. Wrobel, A. Touboul, J. Boch, P. Kohler, P. Dubus, P.X. Wang
Pubblicato in: IEEE Transactions on Nuclear Science ( Volume: 67, Numero: 7, July 2020), 2020, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2020.2992808

On-line beam monitoring and dose profile measurements of a 208 Pb beam of 150 GeV/n with a liquid-filled ionization chamber array

Autori: V. Wyrwoll, B. Delfs, M. Lapp, D. Poppinga, P. Fernandéz Martinéz, M. Kastriotou, R. García Alía, K. Røed, A. Gerbershagen, H.K. Looe, B. Poppe
Pubblicato in: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Numero 987, 2021, Pagina/e 164831, ISSN 0168-9002
Editore: Elsevier BV
DOI: 10.1016/j.nima.2020.164831

Longitudinal Direct Ionization Impact of Heavy Ions on See Testing for Ultrahigh Energies

Autori: Vanessa Wyrwoll, Ruben Garcia Alia, Ketil Roed, Carlo Cazzaniga, Maria Kastriotou, Pablo Fernandez-Martinez, Andrea Coronetti, Francesco Cerutti
Pubblicato in: IEEE Transactions on Nuclear Science, Numero 67/7, 2020, Pagina/e 1530-1539, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2020.2994370

Assessment of Proton Direct Ionization for the Radiation Hardness Assurance of Deep Submicron SRAMs Used in Space Applications

Autori: Andrea Coronetti, Ruben Garcia Alia, Jialei Wang, Maris Tali, Matteo Cecchetto, Carlo Cazzaniga, Arto Javanainen, Frederic Saigne, Paul Leroux
Pubblicato in: IEEE Transactions on Nuclear Science, Numero 68/5, 2021, Pagina/e 937-948, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2021.3061209

Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET

Autori: K. Niskanen, A. D. Touboul, R. Coq Germanicus, A. Michez, A. Javanainen, F. Wrobel, J. Boch, V. Pouget, F. Saigne
Pubblicato in: IEEE Transactions on Nuclear Science, Numero 67/7, 2020, Pagina/e 1365-1373, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2020.2983599

Single Event Effect Testing with Ultrahigh Energy Heavy Ion Beams

Autori: M. Kastriotou, P. Fernandez-Martinez, R. Garcia Alia, C. Cazzaniga, M. Cecchetto, A. Coronetti, G. Lerner, M. Tali, N. Kerboub, V. Wyrwoll, J. Bernhard, S. Danzeca, V. Ferlet-Cavrois, A. Gerbershagen, H. Wilkens
Pubblicato in: IEEE Transactions on Nuclear Science ( Volume: 67, Numero: 1, Jan. 2020), 2019, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2019.2961801

Proton Direct Ionization in Sub-Micron Technologies : Numerical Method for RPP Parameter Extraction

Autori: Lüdeke, Sascha; Javanainen, Arto
Pubblicato in: IEEE Transactions on Nuclear Science ( Volume: 69, Numero: 3, March 2022), Numero 2, 2022, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2022.3147592

Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies

Autori: C. Martinella, R. G. Alia, R. Stark, A. Coronetti, C. Cazzaniga, M. Kastriotou, Y. Kadi, R. Gaillard, U. Grossner, A. Javanainen
Pubblicato in: IEEE Transactions on Nuclear Science, Numero 68/5, 2021, Pagina/e 634-641, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2021.3065122

Direct Ionization Impact on Accelerator Mixed-Field Soft-Error Rate

Autori: Ruben Garcia Alia, Maris Tali, Markus Brugger, Matteo Cecchetto, Francesco Cerutti, Andrea Cononetti, Salvatore Danzeca, Luigi Esposito, Pablo Fernandez-Martinez, Simone Gilardoni, Angelo Infantino, Maria Kastriotou, Nourdine Kerboub, Giuseppe Lerner, Vanessa Wyrwoll, Veronique Ferlet-Cavrois, Cesar Boatella, Arto Javanainen, Heikki Kettunen, Yolanda Morilla, Pedro Martin-Holgado, Remi Gaillard, F
Pubblicato in: IEEE Transactions on Nuclear Science, Numero 67/1, 2020, Pagina/e 345-352, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2019.2951307

Analysis of the photoneutron field near the THz dump of the CLEAR accelerator at CERN with SEU measurements and simulations

Autori: G. Lerner, A. Coronetti, J. Kempf, R. Garcia Alia, F. Cerutti, D. Prelipcean, M. Cecchetto, A. Gilardi, W. Farabolini, R. Corsini
Pubblicato in: IEEE Transactions on Nuclear Science ( Early Access ), 2022, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2022.3157404

Measurements of Low-Energy Protons using a Silicon Detector for Application to SEE Testing

Autori: C. Cazzaniga, R. Garcia Alia, A. Coronetti, K. Bilko, Y. Morilla, P. Martin-Holgado, M. Kastriotou, C. Frost
Pubblicato in: IEEE Transactions on Nuclear Science ( Volume: 69, Numero: 3, March 2022), 2021, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2021.3123814

Mitigation and Predictive Assessment of SET Immunity of Digital Logic Circuits for Space Missions

Autori: Ygor Q. Aguiar, Frédéric Wrobel, Jean-Luc Autran, Paul Leroux, Frédéric Saigné, Vincent Pouget, Antoine D. Touboul
Pubblicato in: Aerospace, Numero 7/2, 2020, Pagina/e 12, ISSN 2226-4310
Editore: MDPI
DOI: 10.3390/aerospace7020012

Reliability-driven pin assignment optimization to improve in-orbit soft-error rate

Autori: Y.Q. Aguiar, F. Wrobel, J.-L. Autran, P. Leroux, F. Saigné, V. Pouget, A.D. Touboul
Pubblicato in: Microelectronics Reliability, Numero 114, 2020, Pagina/e 113885, ISSN 0026-2714
Editore: Elsevier BV
DOI: 10.1016/j.microrel.2020.113885

Comparison of the Total Ionizing Dose Sensitivity of a System in Package Point of Load Converter Using Both Component- and System-Level Test Approaches

Autori: Tomasz Rajkowski, Frédéric Saigné, Kimmo Niskanen, Jérôme Boch, Tadec Maraine, Pierre Kohler, Patrick Dubus, Antoine Touboul, Pierre-Xiao Wang
Pubblicato in: Electronics, Numero 10/11, 2021, Pagina/e 1235, ISSN 2079-9292
Editore: MDPI
DOI: 10.3390/electronics10111235

Heavy Ion Nuclear Reaction Impact on SEE Testing: From Standard to Ultra-high Energies

Autori: Vanessa Wyrwoll, Ruben Garcia Alia, Ketil Roed, Pablo Fernandez-Martinez, Maria Kastriotou, Matteo Cecchetto, Nourdine Kerboub, Maris Tali, Francesco Cerutti
Pubblicato in: IEEE Transactions on Nuclear Science, Numero 67/7, 2020, Pagina/e 1590-1598, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2020.2973591

0.1–10 MeV Neutron Soft Error Rate in Accelerator and Atmospheric Environments

Autori: Matteo Cecchetto, Ruben Garcia Alia, Frederic Wrobel, Andrea Coronetti, Kacper Bilko, David Lucsanyi, Salvatore Fiore, Giulia Bazzano, Elisa Pirovano, Ralf Nolte
Pubblicato in: IEEE Transactions on Nuclear Science, Numero 68/5, 2021, Pagina/e 873-883, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2021.3064666

Microprocessor Error Diagnosis by Trace Monitoring under Laser Testing

Autori: M. Pena-Fernandez, A. Lindoso, L. Entrena, I. Lopes, V. Pouget
Pubblicato in: IEEE Transactions on Nuclear Science, 2021, Pagina/e 1-1, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2021.3067554

Design exploration of majority voter architectures based on the signal probability for TMR strategy optimization in space applications

Autori: Y.Q. Aguiar, F. Wrobel, J.-L. Autran, P. Leroux, F. Saigné, V. Pouget, A.D. Touboul
Pubblicato in: Microelectronics Reliability, Numero 114, 2020, Pagina/e 113877, ISSN 0026-2714
Editore: Elsevier BV
DOI: 10.1016/j.microrel.2020.113877

Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment

Autori: Daniel Soderstrom, Lucas Matana Luza, Heikki Kettunen, Arto Javanainen, Wilfrid Farabolini, Antonio Gilardi, Andrea Coronetti, Christian Poivey, Luigi Dilillo
Pubblicato in: IEEE Transactions on Nuclear Science, Numero 68/5, 2021, Pagina/e 716-723, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2021.3068186

Impact of Complex Logic Cell Layout on the Single-Event Transient Sensitivity

Autori: Y. Q. Aguiar, F. Wrobel, J.-L. Autran, P. Leroux, F. Saigne, A. D. Touboul, V. Pouget
Pubblicato in: IEEE Transactions on Nuclear Science, Numero 66/7, 2019, Pagina/e 1465-1472, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2019.2918077

Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions

Autori: Y.Q. Aguiar, F. Wrobel, J.-L. Autran, P. Leroux, F. Saigné, A.D. Touboul, V. Pouget
Pubblicato in: Microelectronics Reliability, Numero 88-90, 2018, Pagina/e 920-924, ISSN 0026-2714
Editore: Elsevier BV
DOI: 10.1016/j.microrel.2018.07.018

"An SRAM-Based Radiation Monitor With Dynamic Voltage Control in 0.18-<inline-formula> <tex-math notation=""LaTeX"">$\mu$ </tex-math> </inline-formula>m CMOS Technology"

Autori: Jeffrey Prinzie, Sam Thys, Bjorn Van Bockel, Jialei Wang, Valentijn De Smedt, Paul Leroux
Pubblicato in: IEEE Transactions on Nuclear Science, Numero 66/1, 2019, Pagina/e 282-289, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2018.2885693

Ultraenergetic Heavy-Ion Beams in the CERN Accelerator Complex for Radiation Effects Testing

Autori: Ruben Garcia Alia, Pablo Fernandez Martinez, Maria Kastriotou, Markus Brugger, Johannes Bernhard, Matteo Cecchetto, Francesco Cerutti, Nikolaos Charitonidis, Salvatore Danzeca, Lau Gatignon, Alexander Gerbershagen, Simone Gilardoni, Nourdine Kerboub, Maris Tali, Vanessa Wyrwoll, Veronique Ferlet-Cavrois, Cesar Boatella Polo, Hugh Evans, Gianluca Furano, Remi Gaillard
Pubblicato in: IEEE Transactions on Nuclear Science, Numero 66/1, 2019, Pagina/e 458-465, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2018.2883501

Gd 3+ -doped sol-gel silica glass for remote ionizing radiation dosimetry

Autori: Hicham El hamzaoui, Géraud Bouwmans, Bruno Capoen, Andy Cassez, Rémi Habert, Youcef Ouerdane, Sylvain Girard, Diego Di francesca, Nourdine Kerboub, Adriana Morana, Daniel Söderström, Aziz Boukenter, Mohamed Bouazaoui
Pubblicato in: OSA Continuum, Numero 2/3, 2019, Pagina/e 715, ISSN 2578-7519
Editore: OSA Continuum
DOI: 10.1364/osac.2.000715

In-Situ Testing of a Multi-Band Software-Defined Radio Platform in a Mixed-Field Irradiation Environment

Autori: Budroweit, Mueller, Jaksch, Alía, Coronetti, Koelpin
Pubblicato in: Aerospace, Numero 6/10, 2019, Pagina/e 106, ISSN 2226-4310
Editore: Aerospace 2019
DOI: 10.3390/aerospace6100106

Neutron-Induced Failure Dependence on Reverse Gate Voltage for SiC Power MOSFETs in Atmospheric Environment

Autori: Kimmo Niskanen; R. Coq Germanicus; A. Michez; Frédéric Wrobel; Jerome Boch; Frédéric Saigné; Antoine Touboul
Pubblicato in: "IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2021, 68 (8), pp.1623-1632. ⟨10.1109/tns.2021.3077733⟩", Numero 8, 2021, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2021.3077733

Exploiting Transistor Folding Layout as RHBD Technique Against Single-Event Transients

Autori: Y. Q. Aguiar, F. Wrobel, J.-L. Autran, F. L. Kastensmidt, P. Leroux, F. Saigne, V. Pouget, A. D. Touboul
Pubblicato in: IEEE Transactions on Nuclear Science, Numero 67/7, 2020, Pagina/e 1581-1589, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2020.3003166

Study of SEU Sensitivity of SRAM-Based Radiation Monitors in 65-nm CMOS

Autori: Jialei Wang, Jeffrey Prinzie, Andrea Coronetti, S. Thys, Ruben Garcia Alia, Paul Leroux
Pubblicato in: IEEE Transactions on Nuclear Science, Numero 68/5, 2021, Pagina/e 913-920, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2021.3072328

The pion single-event latch-up cross-section enhancement: mechanisms and consequences for accelerator hardness assurance

Autori: Andrea Coronetti, Ruben Garcia Alia, Francesco Cerutti, Wojtek Hajdas, Daniel Soderstrom, Arto Javanainen, Frederic Saigne
Pubblicato in: IEEE Transactions on Nuclear Science, 2021, Pagina/e 1-1, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2021.3070216

Heavy Ion Induced Single Event Effects Characterization on an RF-Agile Transceiver for Flexible Multi-Band Radio Systems in NewSpace Avionics

Autori: Jan Budroweit, Mattis Jaksch, Rubén Garcia Alía, Andrea Coronetti, Alexander Kölpin
Pubblicato in: Aerospace, Numero 7/2, 2020, Pagina/e 14, ISSN 2226-4310
Editore: MDPI a
DOI: 10.3390/aerospace7020014

Radioluminescence Response of Ce-, Cu-, and Gd-Doped Silica Glasses for Dosimetry of Pulsed Electron Beams.

Autori: Daniel Soderstrom; Heikki Kettunen; Adriana Morana; Arto Javanainen; Youcef Ouerdane; Hicham El Hamzaoui; Bruno Capoen; Géraud Bouwmans; Mohamed Bouazaoui; Sylvain Girard
Pubblicato in: Sensors, Vol 21, Iss 7523, p 7523 (2021), Numero 6, 2021, ISSN 1424-8220
Editore: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/s21227523

Radiation Hardness Assurance Through System-Level Testing: Risk Acceptance, Facility Requirements, Test Methodology, and Data Exploitation

Autori: Andrea Coronetti, Ruben Garcia Alia, Jan Budroweit, Tomasz Rajkowski, Israel Da Costa Lopes, Kimmo Niskanen, Daniel Soderstrom, Carlo Cazzaniga, Rudy Ferraro, Salvatore Danzeca, Julien Mekki, Florent Manni, David Dangla, Cedric Virmontois, Nourdine Kerboub, Alexander Koelpin, Frederic Saigne, Pierre Wang, Vincent Pouget, Antoine Touboul, Arto Javanainen, Heikki Kettunen, Rosine Coq Germanicus
Pubblicato in: IEEE Transactions on Nuclear Science, Numero 68/5, 2021, Pagina/e 958-969, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2021.3061197

A 0.18 pJ/step Time-Domain 1st Order ∆Σ Capacitance-to-Digital Converter in 65-nm CMOS

Autori: A. Karmakar, V. De Smedt, and P. Leroux
Pubblicato in: 2021 IEEE International Symposium on Circuits and Systems (ISCAS), 2021, ISBN 978-1-7281-9201-7
Editore: IEEE
DOI: 10.1109/iscas51556.2021.9401505

Effect of Temperature on Single Event Latchup Sensitivity

Autori: S. Guagliardo, F. Wrobel, Y. Q. Aguiar, J-L Autran, P. Leroux, F. Saigne, V. Pouget, A.D. Touboul
Pubblicato in: 2020 15th Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2020, Pagina/e 1-5, ISBN 978-1-7281-5426-8
Editore: IEEE
DOI: 10.1109/dtis48698.2020.9081275

Heavy Ion-Induced SEE and 60Co TID effects testing on commercial logic devices

Autori: P. Kohler, T. Rajkowski, F.Saigné, P. X. Wang, A. Sanchez, L. Puybusque, L.Gouyet
Pubblicato in: 2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC), 2020
Editore: IEEE
DOI: 10.1109/redw51883.2020.9325826

Thermal-to-high-energy neutron SEU characterization of commercial SRAMs

Autori: A. Coronetti, R. Garcia Alia, M. Letiche, C. Cazzaniga, M. Kastriotou, M. Cecchetto, K. Bilko, P. Martin-Holgado
Pubblicato in: 2021 IEEE Radiation Effects Data Workshop (REDW), 2021
Editore: IEEE
DOI: 10.1109/nsrec45046.2021.9679344

Pseudo-Differential Time-Domain Integrator Using Charge-Based Time-Domain Circuits

Autori: Arijit Karmakar; Valentijn De Smedt; Paul Leroux
Pubblicato in: LASCAS, Numero 1, 2021
Editore: IEEE
DOI: 10.1109/lascas51355.2021.9459120

Development and evaluation of a flexible instrumentation layer for system-level testing of radiation effects

Autori: Israel C. Lopes, V. Pouget, F. Wrobel, A. Touboul, F. Saigne and K. Røed
Pubblicato in: 2020 IEEE Latin-American Test Symposium (LATS), 2020, ISBN 978-1-7281-8732-7
Editore: IEEE
DOI: 10.1109/lats49555.2020.9093681

Investigating the Impact of Radiation-Induced Soft Errors on the Reliability of Approximate Computing Systems

Autori: Lucas Matana Luza, Daniel Soderstrom, Georgios Tsiligiannis, Helmut Puchner, Carlo Cazzaniga, Ernesto Sanchez, Alberto Bosio, Luigi Dilillo
Pubblicato in: 2020 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2020, Pagina/e 1-6, ISBN 978-1-7281-9457-8
Editore: IEEE
DOI: 10.1109/dft50435.2020.9250865

Design challenges of a highly integrated SDR platform for multiband spacecraft applications in radiation enviroments

Autori: J. Budroweit, A. Koelpin
Pubblicato in: 2018 IEEE Topical Workshop on Internet of Space (TWIOS), 2018, Pagina/e 9-12, ISBN 978-1-5386-1294-1
Editore: IEEE
DOI: 10.1109/twios.2018.8311399

A Survey on Analog-to-Digital Converter Performance with Respect to Ionizing Radiation

Autori: Steffen Mueller, Robert Weigel, Alexander Koelpin
Pubblicato in: 2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2017, Pagina/e 1-4, ISBN 978-1-5386-1261-3
Editore: IEEE
DOI: 10.1109/radecs.2017.8696150

Advanced In-Situ Instrumentation of RF Circuits for Mixed-Field Irradiation Testing Purpose

Autori: Steffen Mueller, Salvatore Danzeca, Ruben Garcia Alia, Markus Brugger, Robert Weigel, Alexander Koelpin
Pubblicato in: 2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2017, Pagina/e 1-5, ISBN 978-1-5386-1261-3
Editore: IEEE
DOI: 10.1109/radecs.2017.8696117

Aging and gate bias effects on TID sensitivity of wide bandgap power devices

Autori: K. Niskanen , A. D. Touboul, R. Coq Germanicus , A. Michez , F. Wrobel , J. Boch , V. Pouget , F. Saigné
Pubblicato in: 2018
Editore: IEEE RADECS2018
DOI: 10.5281/zenodo.2652367

Effects of Thermal Neutron Irradiation on a Self-Refresh DRAM

Autori: L. Matana Luza, D. Soderstrom, H. Puchner, R. Garcia Alia, M. Letiche, A. Bosio, L. Dilillo
Pubblicato in: 2020 15th Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2020, ISBN 978-1-7281-5426-8
Editore: IEEE
DOI: 10.1109/dtis48698.2020.9080918

Single Event Latchup Cross Section Calculation from TCAD Simulations - Effects of the Doping Profiles and Anode to Cathode Spacing

Autori: S. Guagliardo et al.
Pubblicato in: 2019
Editore: IEEE
DOI: 10.1109/radecs47380.2019.9745682

SEU characterization of commercial and custom-designed SRAMs based on 90 nm technology and below

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Pubblicato in: 2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC), 2020, Pagina/e 1-8, ISBN 978-1-6654-1532-3
Editore: IEEE
DOI: 10.1109/redw51883.2020.9325822

Technology Impact on Neutron-Induced Effects in SDRAMs: A Comparative Study

Autori: Lucas Matana Luza; Daniel Soderstrom; Andre Martins Pio de Mattos; Eduardo Augusto Bezerra; Carlo Cazzaniga; Maria Kastriotou; Christian Poivey; Luigi Dilillo
Pubblicato in: "16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS 2021), Jun 2021, Montpellier, France. ⟨10.1109/DTIS53253.2021.9505143⟩", Numero 5, 2021
Editore: IEEE
DOI: 10.1109/dtis53253.2021.9505143

Summary of Radiation Hardening Assurance Approaches in European Test Facilities

Autori: Lüdeke, Sascha
Pubblicato in: Numero 1, 2019
Editore: zenodo
DOI: 10.5281/zenodo.2708850

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