SiliconLaser

Informations projet

SiLAS

N° de convention de subvention: 735008

DOI

10.3030/735008

Projet clôturé

Date de signature de la CE 13 Decembre 2016

Date de début 1 Janvier 2017

Date de fin 30 Juin 2021

Financé au titre de

• EXCELLENT SCIENCE - Future and Emerging Technologies (FET)

Coût total

€ 3 985 418,75

Contribution de l’UE

€ 3 985 417,50

Coordonné par

TECHNISCHE UNIVERSITEIT EINDHOVEN
Netherlands

CORDIS fournit des liens vers les livrables publics et les publications des projets HORIZON.

Les liens vers les livrables et les publications des projets du 7e PC, ainsi que les liens vers certains types de résultats spécifiques tels que les jeux de données et les logiciels, sont récupérés dynamiquement sur OpenAIRE .

Livrables

Other (2)

Recruitment of researchers

Recruitment of researchers Aim to hire 30 female if possible

Entrepreneurial course

Organize entrepreneurial course for students.

Documents, reports (23)

Surface passivation

Development of surface passivation

Optically pumped SiGe laser

Observation of optically pumped lasing in Hex-SiGe as a function of temperature

Strain dependent PL, TeraHertz

Insight into the factors determining the optical properties of HexSiGe

CMOS compatible Hex-SiGe

Report on CMOS compatible Hex-SiGe layers

SiGe nanoLED

Demonstration of an electrically pumped Hex-SiGe LED

Theory

Calculation of the band gap energy and optical transition matrix elements as a function of HexSiGe composition

p-n junction in Hex SiGe

Radial/axial impurity p and n-type doping and demonstration of a p-n junction

WZ substrates

Growth of catalystfree HexSiGe substrate

Synthesis of Hex-SiGe

Synthesis of HexSixGe1x including structural and chemical analyses

Terahertz conductivity

Terahertz conductivity measurements on doped HexSiGe NWs

Verification direct bandgap

Measurement of the basic optical properties of HexSiGe Verification direct bandgap

Continued optimization synthesis

Continued optimization of synthesis and analysis for WP2,3,4,5.

Annual technical Report

Technical report related to the Technical Action Check Meeting in M14

Lattice parameters

Measured lattice parameters including lattice strain as a function of HexSiGe composition

Nanolaser Modelling

Calculation of the gain spectrum

Scientific action check meeting 1

Date 14 feb 2019AgendaOpening agendaIntroduction by coordinator WP6All presentations should discuss the status of milestones and deliverablesPresentation on HexSiGe synthesis TUe WP1Presentation on measurements of the lattice parameters and strain distribution JKU WP1Presentation on theoretical calculation on the properties of HexSiGe Jena WP1Presentation on the optical properties of Hex SiGe TUe TUM UOXF WP2Presentation on TeraHertz conductivity measurements and doping UOXF TUe WP3Presentation on surface passivation and ohmic contatcs IBM WP4Presentation on WZ substrates and CMOS integration IBM TUe WP5Agreements for the next yearAmendments to the project

Data Management Plan Report

Report on the implementation of the data management plan

Spontaneous emission dynamics

Measurements of the spontaneous emission dynamics in Hex-SiGe NWs

Final technical/ scientific review meeting documents

Date: 24-8-2021 Opening, agenda Introduction by coordinator (WP6) All presentations should discuss the status of milestones and deliverables Presentation on Hex-SiGe synthesis (TU/e, WP1) Presentation on measurements of the lattice parameters and strain distribution (JKU, WP1) Presentation on theoretical calculation on the properties of Hex-SiGe (Jena, WP1) Presentation on the optical properties of Hex SiGe (TU/e, TUM, UOXF, WP2) Presentation on TeraHertz conductivity measurements and doping (UOXF, TU/e, WP3) Presentation on p-n junction (IBM, WP3) Presentation on the electrically pumped Hex-SiGe nanolaser (TUM) Presentation on WZ substrates and Vitual Hex-SiGe substrates (IBM, TU/e, WP5) Final conclusions of the project and follow-up Closure

Strain dependent PL

We intend to show to extend the tuning range of hex-SiGe from the present 1-8-3.5 micron further into the infrared

Technical action check meeting

Date 1522018Opening agendaIntroduction by coordinator WP6All presentations should discuss the status of milestones and deliverablesPresentation on HexSiGe synthesis TUe WP1Presentation on measurements of the lattice parameters and strain distribution JKU WP1Presentation on theoretical calculation on the properties of HexSiGe Jena WP1Presentation on the optical properties of Hex SiGe TUe TUM UOXF WP2Presentation on TeraHertz conductivity measurements UOXF WP3Presentation on surface passivation IBM WP4Presentation on steps towards CMOS integration IBM TUe WP5Agreements for the next yearAmendments to the projectClosure

Ohmic contact formation

Ohmic contact formation on p and n-type Hex SiGe

Electrically pumped nanolaser

Originally: Performance characteristics of an electrically pumped Hex-SiGe nanolaser Amendment: We will submit the outcome of a defect study.

Websites, patent fillings, videos etc. (1)

Deliverable website

Set up project website for deliverablesProject logo ready

Publications

Peer reviewed articles (15)

Efficient strain-induced light emission in lonsdaleite germanium

Auteurs: Suckert, Jens René; Rödl, Claudia; Furthmüller, Jürgen; Bechstedt, Friedhelm; Botti, Silvana
Publié dans: Phys.Rev.Materials, Numéro 5(2), 2021, Page(s) 024602, ISSN 2475-9953
Éditeur: American Physical Society
DOI: 10.1103/physrevmaterials.5.024602

Probing Lattice Dynamics and Electronic Resonances in Hexagonal Ge and Si x Ge 1– x Alloys in Nanowires by Raman Spectroscopy

Auteurs: Diego de Matteis, Marta De Luca, Elham M. T. Fadaly, Marcel A. Verheijen, Miquel López-Suárez, Riccardo Rurali, Erik P. A. M. Bakkers, Ilaria Zardo
Publié dans: ACS Nano, Numéro 14/6, 2020, Page(s) 6845-6856, ISSN 1936-0851
Éditeur: American Chemical Society
DOI: 10.1021/acsnano.0c00762

A Global-Optimization Study of the Phase Diagram of Free-Standing Hydrogenated Two-Dimensional Silicon

Auteurs: Pedro Borlido, Miguel A. L. Marques, Silvana Botti
Publié dans: The Journal of Physical Chemistry C, Numéro 125/11, 2021, Page(s) 6298-6305, ISSN 1932-7447
Éditeur: American Chemical Society
DOI: 10.1021/acs.jpcc.0c10753

Wurtzite InP microdisks: from epitaxy to room-temperature lasing

Auteurs: Philipp Staudinger, Svenja Mauthe, Noelia Vico Triviño, Steffen Reidt, Kirsten E Moselund and Heinz Schmid
Publié dans: Nanotechnology, Numéro 32 (7), 2020, Page(s) 075605, ISSN 0957-4484
Éditeur: Institute of Physics Publishing
DOI: 10.1088/1361-6528/abbb4e

Epitaxial Ge 0.81 Sn 0.19 Nanowires for Nanoscale Mid-Infrared Emitters

Auteurs: Michael S. Seifner, Alain Dijkstra, Johannes Bernardi, Andreas Steiger-Thirsfeld, Masiar Sistani, Alois Lugstein, Jos E. M. Haverkort, Sven Barth
Publié dans: ACS Nano, Numéro 13/7, 2019, Page(s) 8047-8054, ISSN 1936-0851
Éditeur: American Chemical Society
DOI: 10.1021/acsnano.9b02843

Concurrent Zinc-Blende and Wurtzite Film Formation by Selection of Confined Growth Planes

Auteurs: Philipp Staudinger, Svenja Mauthe, Kirsten E. Moselund, Heinz Schmid
Publié dans: Nano Letters, Numéro 18/12, 2018, Page(s) 7856-7862, ISSN 1530-6984
Éditeur: American Chemical Society
DOI: 10.1021/acs.nanolett.8b03632

Accurate electronic and optical properties of hexagonal germanium for optoelectronic applications

Auteurs: Claudia Rödl, Jürgen Furthmüller, Jens Renè Suckert, Valerio Armuzza, Friedhelm Bechstedt, Silvana Botti
Publié dans: Physical Review Materials, Numéro 3/3, 2019, Page(s) 034602, ISSN 2475-9953
Éditeur: American Institute of Physics
DOI: 10.1103/physrevmaterials.3.034602

Exploring the Size Limitations of Wurtzite III–V Film Growth

Auteurs: Philipp Staudinger, Kirsten E. Moselund, Heinz Schmid
Publié dans: Nano Letters, Numéro 20/1, 2019, Page(s) 686-693, ISSN 1530-6984
Éditeur: American Chemical Society
DOI: 10.1021/acs.nanolett.9b04507

Temperature-Dependent Refractive Index of Quartz at Terahertz Frequencies

Auteurs: Christopher L. Davies, Jay B. Patel, Chelsea Q. Xia, Laura M. Herz, Michael B. Johnston
Publié dans: Journal of Infrared, Millimeter, and Terahertz Waves, Numéro 39/12, 2018, Page(s) 1236-1248, ISSN 1866-6892
Éditeur: Springer Verlag
DOI: 10.1007/s10762-018-0538-7

Direct-bandgap emission from hexagonal Ge and SiGe alloys

Auteurs: Elham M. T. Fadaly, Alain Dijkstra, Jens Renè Suckert, Dorian Ziss, Marvin A. J. van Tilburg, Chenyang Mao, Yizhen Ren, Victor T. van Lange, Ksenia Korzun, Sebastian Kölling, Marcel A. Verheijen, David Busse, Claudia Rödl, Jürgen Furthmüller, Friedhelm Bechstedt, Julian Stangl, Jonathan J. Finley, Silvana Botti, Jos E. M. Haverkort, Erik P. A. M. Bakkers
Publié dans: Nature, Numéro 580/7802, 2020, Page(s) 205-209, ISSN 0028-0836
Éditeur: Nature Publishing Group
DOI: 10.1038/s41586-020-2150-y

Three-dimensional cross-nanowire networks recover full terahertz state

Auteurs: Kun Peng, Dimitars Jevtics, Fanlu Zhang, Sabrina Sterzl, Djamshid A. Damry, Mathias U. Rothmann, Benoit Guilhabert, Michael J. Strain, Hark H. Tan, Laura M. Herz, Lan Fu, Martin D. Dawson, Antonio Hurtado, Chennupati Jagadish, Michael B. Johnston
Publié dans: Science, Numéro 368/6490, 2020, Page(s) 510-513, ISSN 0036-8075
Éditeur: American Association for the Advancement of Science
DOI: 10.1126/science.abb0924

Entropy-controlled fully reversible nanostructure formation of Ge on miscut vicinal Si(001) surfaces

Auteurs: Christian Grossauer, Vaclav Holy, Gunther Springholz
Publié dans: Physical Review B, Numéro 102/7, 2020, Page(s) 075420 1-13, ISSN 2469-9950
Éditeur: American Physical Society
DOI: 10.1103/physrevb.102.075420

Unveiling Planar Defects in Hexagonal Group IV Materials

Auteurs: Elham M. T. Fadaly, Anna Marzegalli, Yizhen Ren, Lin Sun, Alain Dijkstra, Diego de Matteis, Emilio Scalise, Andrey Sarikov, Marta De Luca, Riccardo Rurali, Ilaria Zardo, Jos E. M. Haverkort, Silvana Botti, Leo Miglio, Erik P. A. M. Bakkers, Marcel A. Verheijen
Publié dans: Nano Letters, Numéro 21/8, 2021, Page(s) 3619-3625, ISSN 1530-6984
Éditeur: American Chemical Society
DOI: 10.1021/acs.nanolett.1c00683?rel=cite-as&ref=pdf&jav=vor

Point defects in hexagonal silicon

Auteurs: Lin Sun; Mário R. G. Marques; Miguel A. L. Marques; Silvana Botti
Publié dans: Phys Rev Mat, Numéro 5(2), 2021, Page(s) 064605, ISSN 2475-9953
Éditeur: American Physical Society
DOI: 10.1103/physrevmaterials.5.064605

Hexagonal silicon grown from higher order silanes

Auteurs: Yizhen Ren, Philipp Leubner, Marcel A Verheijen, Jos E M Haverkort, Erik P A M Bakkers
Publié dans: Nanotechnology, Numéro 30/29, 2019, Page(s) 295602, ISSN 0957-4484
Éditeur: Institute of Physics Publishing
DOI: 10.1088/1361-6528/ab0d46

Droits de propriété intellectuelle

Patent (4)

Light emission from hexagonal SiGe

Numéro de demande/publication: US TUE-284
Date: 2019-02-18
Demandeur(s): FRIEDRICH-SCHILLER-UNIVERSITÄT JENA

Light emission from hexagonal SiGe

Numéro de demande/publication: US TUE-284
Date: 2019-02-18
Demandeur(s): TECHNISCHE UNIVERSITEIT EINDHOVEN

Light emission from hexagonal SiGe

Numéro de demande/publication: US TUE-284
Date: 2019-02-18
Demandeur(s): FRIEDRICH-SCHILLER-UNIVERSITÄT JENA

Light emission from hexagonal SiGe

Numéro de demande/publication: US TUE-284
Date: 2019-02-18
Demandeur(s): TECHNISCHE UNIVERSITEIT EINDHOVEN