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SiliconLaser

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Risultati finali

Recruitment of researchers (si apre in una nuova finestra)

Recruitment of researchers Aim to hire 30 female if possible

Entrepreneurial course (si apre in una nuova finestra)

Organize entrepreneurial course for students.

Surface passivation (si apre in una nuova finestra)

Development of surface passivation

Optically pumped SiGe laser (si apre in una nuova finestra)

Observation of optically pumped lasing in Hex-SiGe as a function of temperature

Strain dependent PL, TeraHertz (si apre in una nuova finestra)

Insight into the factors determining the optical properties of HexSiGe

CMOS compatible Hex-SiGe (si apre in una nuova finestra)

Report on CMOS compatible Hex-SiGe layers

SiGe nanoLED (si apre in una nuova finestra)

Demonstration of an electrically pumped Hex-SiGe LED

Theory (si apre in una nuova finestra)

Calculation of the band gap energy and optical transition matrix elements as a function of HexSiGe composition

p-n junction in Hex SiGe (si apre in una nuova finestra)

Radial/axial impurity p and n-type doping and demonstration of a p-n junction

WZ substrates (si apre in una nuova finestra)

Growth of catalystfree HexSiGe substrate

Synthesis of Hex-SiGe (si apre in una nuova finestra)

Synthesis of HexSixGe1x including structural and chemical analyses

Terahertz conductivity (si apre in una nuova finestra)

Terahertz conductivity measurements on doped HexSiGe NWs

Verification direct bandgap (si apre in una nuova finestra)

Measurement of the basic optical properties of HexSiGe Verification direct bandgap

Continued optimization synthesis (si apre in una nuova finestra)

Continued optimization of synthesis and analysis for WP2,3,4,5.

Annual technical Report (si apre in una nuova finestra)

Technical report related to the Technical Action Check Meeting in M14

Lattice parameters (si apre in una nuova finestra)

Measured lattice parameters including lattice strain as a function of HexSiGe composition

Nanolaser Modelling (si apre in una nuova finestra)

Calculation of the gain spectrum

Scientific action check meeting 1 (si apre in una nuova finestra)

Date 14 feb 2019AgendaOpening agendaIntroduction by coordinator WP6All presentations should discuss the status of milestones and deliverablesPresentation on HexSiGe synthesis TUe WP1Presentation on measurements of the lattice parameters and strain distribution JKU WP1Presentation on theoretical calculation on the properties of HexSiGe Jena WP1Presentation on the optical properties of Hex SiGe TUe TUM UOXF WP2Presentation on TeraHertz conductivity measurements and doping UOXF TUe WP3Presentation on surface passivation and ohmic contatcs IBM WP4Presentation on WZ substrates and CMOS integration IBM TUe WP5Agreements for the next yearAmendments to the project

Data Management Plan Report (si apre in una nuova finestra)

Report on the implementation of the data management plan

Spontaneous emission dynamics (si apre in una nuova finestra)

Measurements of the spontaneous emission dynamics in Hex-SiGe NWs

Final technical/ scientific review meeting documents (si apre in una nuova finestra)

Date: 24-8-2021 Opening, agenda Introduction by coordinator (WP6) All presentations should discuss the status of milestones and deliverables Presentation on Hex-SiGe synthesis (TU/e, WP1) Presentation on measurements of the lattice parameters and strain distribution (JKU, WP1) Presentation on theoretical calculation on the properties of Hex-SiGe (Jena, WP1) Presentation on the optical properties of Hex SiGe (TU/e, TUM, UOXF, WP2) Presentation on TeraHertz conductivity measurements and doping (UOXF, TU/e, WP3) Presentation on p-n junction (IBM, WP3) Presentation on the electrically pumped Hex-SiGe nanolaser (TUM) Presentation on WZ substrates and Vitual Hex-SiGe substrates (IBM, TU/e, WP5) Final conclusions of the project and follow-up Closure

Strain dependent PL (si apre in una nuova finestra)

We intend to show to extend the tuning range of hex-SiGe from the present 1-8-3.5 micron further into the infrared

Technical action check meeting (si apre in una nuova finestra)

Date 1522018Opening agendaIntroduction by coordinator WP6All presentations should discuss the status of milestones and deliverablesPresentation on HexSiGe synthesis TUe WP1Presentation on measurements of the lattice parameters and strain distribution JKU WP1Presentation on theoretical calculation on the properties of HexSiGe Jena WP1Presentation on the optical properties of Hex SiGe TUe TUM UOXF WP2Presentation on TeraHertz conductivity measurements UOXF WP3Presentation on surface passivation IBM WP4Presentation on steps towards CMOS integration IBM TUe WP5Agreements for the next yearAmendments to the projectClosure

Ohmic contact formation (si apre in una nuova finestra)

Ohmic contact formation on p and n-type Hex SiGe

Electrically pumped nanolaser (si apre in una nuova finestra)

Originally: Performance characteristics of an electrically pumped Hex-SiGe nanolaser Amendment: We will submit the outcome of a defect study.

Pubblicazioni

Efficient strain-induced light emission in lonsdaleite germanium (si apre in una nuova finestra)

Autori: Suckert, Jens René; Rödl, Claudia; Furthmüller, Jürgen; Bechstedt, Friedhelm; Botti, Silvana
Pubblicato in: Phys.Rev.Materials, Numero 5(2), 2021, Pagina/e 024602, ISSN 2475-9953
Editore: American Physical Society
DOI: 10.1103/physrevmaterials.5.024602

Probing Lattice Dynamics and Electronic Resonances in Hexagonal Ge and Si x Ge 1– x Alloys in Nanowires by Raman Spectroscopy (si apre in una nuova finestra)

Autori: Diego de Matteis, Marta De Luca, Elham M. T. Fadaly, Marcel A. Verheijen, Miquel López-Suárez, Riccardo Rurali, Erik P. A. M. Bakkers, Ilaria Zardo
Pubblicato in: ACS Nano, Numero 14/6, 2020, Pagina/e 6845-6856, ISSN 1936-0851
Editore: American Chemical Society
DOI: 10.1021/acsnano.0c00762

A Global-Optimization Study of the Phase Diagram of Free-Standing Hydrogenated Two-Dimensional Silicon (si apre in una nuova finestra)

Autori: Pedro Borlido, Miguel A. L. Marques, Silvana Botti
Pubblicato in: The Journal of Physical Chemistry C, Numero 125/11, 2021, Pagina/e 6298-6305, ISSN 1932-7447
Editore: American Chemical Society
DOI: 10.1021/acs.jpcc.0c10753

Wurtzite InP microdisks: from epitaxy to room-temperature lasing (si apre in una nuova finestra)

Autori: Philipp Staudinger, Svenja Mauthe, Noelia Vico Triviño, Steffen Reidt, Kirsten E Moselund and Heinz Schmid
Pubblicato in: Nanotechnology, Numero 32 (7), 2020, Pagina/e 075605, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6528/abbb4e

Epitaxial Ge 0.81 Sn 0.19 Nanowires for Nanoscale Mid-Infrared Emitters (si apre in una nuova finestra)

Autori: Michael S. Seifner, Alain Dijkstra, Johannes Bernardi, Andreas Steiger-Thirsfeld, Masiar Sistani, Alois Lugstein, Jos E. M. Haverkort, Sven Barth
Pubblicato in: ACS Nano, Numero 13/7, 2019, Pagina/e 8047-8054, ISSN 1936-0851
Editore: American Chemical Society
DOI: 10.1021/acsnano.9b02843

Concurrent Zinc-Blende and Wurtzite Film Formation by Selection of Confined Growth Planes (si apre in una nuova finestra)

Autori: Philipp Staudinger, Svenja Mauthe, Kirsten E. Moselund, Heinz Schmid
Pubblicato in: Nano Letters, Numero 18/12, 2018, Pagina/e 7856-7862, ISSN 1530-6984
Editore: American Chemical Society
DOI: 10.1021/acs.nanolett.8b03632

Accurate electronic and optical properties of hexagonal germanium for optoelectronic applications (si apre in una nuova finestra)

Autori: Claudia Rödl, Jürgen Furthmüller, Jens Renè Suckert, Valerio Armuzza, Friedhelm Bechstedt, Silvana Botti
Pubblicato in: Physical Review Materials, Numero 3/3, 2019, Pagina/e 034602, ISSN 2475-9953
Editore: American Institute of Physics
DOI: 10.1103/physrevmaterials.3.034602

Exploring the Size Limitations of Wurtzite III–V Film Growth (si apre in una nuova finestra)

Autori: Philipp Staudinger, Kirsten E. Moselund, Heinz Schmid
Pubblicato in: Nano Letters, Numero 20/1, 2019, Pagina/e 686-693, ISSN 1530-6984
Editore: American Chemical Society
DOI: 10.1021/acs.nanolett.9b04507

Temperature-Dependent Refractive Index of Quartz at Terahertz Frequencies (si apre in una nuova finestra)

Autori: Christopher L. Davies, Jay B. Patel, Chelsea Q. Xia, Laura M. Herz, Michael B. Johnston
Pubblicato in: Journal of Infrared, Millimeter, and Terahertz Waves, Numero 39/12, 2018, Pagina/e 1236-1248, ISSN 1866-6892
Editore: Springer Verlag
DOI: 10.1007/s10762-018-0538-7

Direct-bandgap emission from hexagonal Ge and SiGe alloys (si apre in una nuova finestra)

Autori: Elham M. T. Fadaly, Alain Dijkstra, Jens Renè Suckert, Dorian Ziss, Marvin A. J. van Tilburg, Chenyang Mao, Yizhen Ren, Victor T. van Lange, Ksenia Korzun, Sebastian Kölling, Marcel A. Verheijen, David Busse, Claudia Rödl, Jürgen Furthmüller, Friedhelm Bechstedt, Julian Stangl, Jonathan J. Finley, Silvana Botti, Jos E. M. Haverkort, Erik P. A. M. Bakkers
Pubblicato in: Nature, Numero 580/7802, 2020, Pagina/e 205-209, ISSN 0028-0836
Editore: Nature Publishing Group
DOI: 10.1038/s41586-020-2150-y

Three-dimensional cross-nanowire networks recover full terahertz state (si apre in una nuova finestra)

Autori: Kun Peng, Dimitars Jevtics, Fanlu Zhang, Sabrina Sterzl, Djamshid A. Damry, Mathias U. Rothmann, Benoit Guilhabert, Michael J. Strain, Hark H. Tan, Laura M. Herz, Lan Fu, Martin D. Dawson, Antonio Hurtado, Chennupati Jagadish, Michael B. Johnston
Pubblicato in: Science, Numero 368/6490, 2020, Pagina/e 510-513, ISSN 0036-8075
Editore: American Association for the Advancement of Science
DOI: 10.1126/science.abb0924

Entropy-controlled fully reversible nanostructure formation of Ge on miscut vicinal Si(001) surfaces (si apre in una nuova finestra)

Autori: Christian Grossauer, Vaclav Holy, Gunther Springholz
Pubblicato in: Physical Review B, Numero 102/7, 2020, Pagina/e 075420 1-13, ISSN 2469-9950
Editore: American Physical Society
DOI: 10.1103/physrevb.102.075420

Unveiling Planar Defects in Hexagonal Group IV Materials (si apre in una nuova finestra)

Autori: Elham M. T. Fadaly, Anna Marzegalli, Yizhen Ren, Lin Sun, Alain Dijkstra, Diego de Matteis, Emilio Scalise, Andrey Sarikov, Marta De Luca, Riccardo Rurali, Ilaria Zardo, Jos E. M. Haverkort, Silvana Botti, Leo Miglio, Erik P. A. M. Bakkers, Marcel A. Verheijen
Pubblicato in: Nano Letters, Numero 21/8, 2021, Pagina/e 3619-3625, ISSN 1530-6984
Editore: American Chemical Society
DOI: 10.1021/acs.nanolett.1c00683?rel=cite-as&ref=pdf&jav=vor

Point defects in hexagonal silicon (si apre in una nuova finestra)

Autori: Lin Sun; Mário R. G. Marques; Miguel A. L. Marques; Silvana Botti
Pubblicato in: Phys Rev Mat, Numero 24759953, 2021, Pagina/e 064605, ISSN 2475-9953
Editore: American Physical Society
DOI: 10.1103/physrevmaterials.5.064605

Hexagonal silicon grown from higher order silanes (si apre in una nuova finestra)

Autori: Yizhen Ren, Philipp Leubner, Marcel A Verheijen, Jos E M Haverkort, Erik P A M Bakkers
Pubblicato in: Nanotechnology, Numero 30/29, 2019, Pagina/e 295602, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6528/ab0d46

Diritti di proprietà intellettuale

Light emission from hexagonal SiGe

Numero candidatura/pubblicazione: US TUE-284
Data: 2019-02-18
Candidato/i: FRIEDRICH-SCHILLER-UNIVERSITÄT JENA

Light emission from hexagonal SiGe

Numero candidatura/pubblicazione: US TUE-284
Data: 2019-02-18
Candidato/i: TECHNISCHE UNIVERSITEIT EINDHOVEN

Light emission from hexagonal SiGe

Numero candidatura/pubblicazione: US TUE-284
Data: 2019-02-18
Candidato/i: FRIEDRICH-SCHILLER-UNIVERSITÄT JENA

Light emission from hexagonal SiGe

Numero candidatura/pubblicazione: US TUE-284
Data: 2019-02-18
Candidato/i: TECHNISCHE UNIVERSITEIT EINDHOVEN

Set di dati

Supporting raw data files as presented in the paper: Direct Band Gap Emission from Hexagonal Ge and SiGe Alloys

Autori: Haverkort, Jos; Fadaly, E.M.T.(Elham); Dijkstra, A. (Alain); Suckert, J.R. (Jens); Ziss, D. (Dorian); van Tilburg, M. (Marvin); Mao, C. (Chenyang); Ren, Y. (Yizhen); van Lange, V.T. (Victor); Korzun, K. (Ksenia); K��lling, S. (Sebastian); Verheijen, M.A. (Marcel); Busse, D. (David); R��dl, C. (Claudia); Furthm��ller, J. (J��rgen); Bechstedt, F. (Friedhelm); Stangl, J. (Julian); Finley, J.J (Jonathan); Botti, S. (Silvana); Bakkers, E.P.A.M. (Erik)
Pubblicato in: 4TU.Centre for Research Data

SiLAS-Concurrent Zinc-Blende and Wurtzite Film Formation by Selection of Confined Growth Planes

Autori: Staudinger, P. (Philipp); Schmid, H. (Heinz); Mauthe, S. (Svenja); Moselund, K.E. (Kirsten)
Pubblicato in: 4TU.Centre for Research Data

Supporting raw data files as presented in the paper: Three-dimensional cross-nanowire networks recover full terahertz state

Autori: Johnston, M.B. (Michael)
Pubblicato in: 4TU.Centre for Research Data

Supporting raw data files as presented in the paper: Exploring the Size Limitations of Wurtzite III���V Film Growth

Autori: Staudinger, P. (Philipp); Moselund, K.E. (Kirsten); Schmid, H. (Heinz)
Pubblicato in: 4TU.Centre for Research Data

Dataset for "Wurtzite InP Microdisks: from Epitaxy to room temperature Lasing"

Autori: Staudinger, P. (Philipp); Mauthe, S. (Svenja); Trivino, Noelia Vico; Reidt, Steffen; Moselund, Kirsten E.; Schmidt, Heinz
Pubblicato in: 4TU.ResearchData

Dataset for "Unveiling Planar Defects in Hexagonal Group IV Materials "

Autori: Fadaly, E.M.T.(Elham); Marzegalli, Anna; Ren, Y. (Yizhen); Dijkstra, A. (Alain); de Matteis, Diego; Scalise, Emilio; Sarikov, Andrey; De Luca, Marta; Rurali, Riccardo; Zardo, Ilaria; Haverkort, Jos; Botti, S. (Silvana); Miglio, Leo; Bakkers, E.P.A.M. (Erik); Verheijen, M.A. (Marcel)
Pubblicato in: 4TU.ResearchData

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