Rezultaty Other (2) Recruitment of researchers Recruitment of researchers Aim to hire 30 female if possible Entrepreneurial course Organize entrepreneurial course for students. Documents, reports (23) Surface passivation Development of surface passivation Optically pumped SiGe laser Observation of optically pumped lasing in Hex-SiGe as a function of temperature Strain dependent PL, TeraHertz Insight into the factors determining the optical properties of HexSiGe CMOS compatible Hex-SiGe Report on CMOS compatible Hex-SiGe layers SiGe nanoLED Demonstration of an electrically pumped Hex-SiGe LED Theory Calculation of the band gap energy and optical transition matrix elements as a function of HexSiGe composition p-n junction in Hex SiGe Radial/axial impurity p and n-type doping and demonstration of a p-n junction WZ substrates Growth of catalystfree HexSiGe substrate Synthesis of Hex-SiGe Synthesis of HexSixGe1x including structural and chemical analyses Terahertz conductivity Terahertz conductivity measurements on doped HexSiGe NWs Verification direct bandgap Measurement of the basic optical properties of HexSiGe Verification direct bandgap Continued optimization synthesis Continued optimization of synthesis and analysis for WP2,3,4,5. Annual technical Report Technical report related to the Technical Action Check Meeting in M14 Lattice parameters Measured lattice parameters including lattice strain as a function of HexSiGe composition Nanolaser Modelling Calculation of the gain spectrum Scientific action check meeting 1 Date 14 feb 2019AgendaOpening agendaIntroduction by coordinator WP6All presentations should discuss the status of milestones and deliverablesPresentation on HexSiGe synthesis TUe WP1Presentation on measurements of the lattice parameters and strain distribution JKU WP1Presentation on theoretical calculation on the properties of HexSiGe Jena WP1Presentation on the optical properties of Hex SiGe TUe TUM UOXF WP2Presentation on TeraHertz conductivity measurements and doping UOXF TUe WP3Presentation on surface passivation and ohmic contatcs IBM WP4Presentation on WZ substrates and CMOS integration IBM TUe WP5Agreements for the next yearAmendments to the project Data Management Plan Report Report on the implementation of the data management plan Spontaneous emission dynamics Measurements of the spontaneous emission dynamics in Hex-SiGe NWs Final technical/ scientific review meeting documents Date: 24-8-2021 Opening, agenda Introduction by coordinator (WP6) All presentations should discuss the status of milestones and deliverables Presentation on Hex-SiGe synthesis (TU/e, WP1) Presentation on measurements of the lattice parameters and strain distribution (JKU, WP1) Presentation on theoretical calculation on the properties of Hex-SiGe (Jena, WP1) Presentation on the optical properties of Hex SiGe (TU/e, TUM, UOXF, WP2) Presentation on TeraHertz conductivity measurements and doping (UOXF, TU/e, WP3) Presentation on p-n junction (IBM, WP3) Presentation on the electrically pumped Hex-SiGe nanolaser (TUM) Presentation on WZ substrates and Vitual Hex-SiGe substrates (IBM, TU/e, WP5) Final conclusions of the project and follow-up Closure Strain dependent PL We intend to show to extend the tuning range of hex-SiGe from the present 1-8-3.5 micron further into the infrared Technical action check meeting Date 1522018Opening agendaIntroduction by coordinator WP6All presentations should discuss the status of milestones and deliverablesPresentation on HexSiGe synthesis TUe WP1Presentation on measurements of the lattice parameters and strain distribution JKU WP1Presentation on theoretical calculation on the properties of HexSiGe Jena WP1Presentation on the optical properties of Hex SiGe TUe TUM UOXF WP2Presentation on TeraHertz conductivity measurements UOXF WP3Presentation on surface passivation IBM WP4Presentation on steps towards CMOS integration IBM TUe WP5Agreements for the next yearAmendments to the projectClosure Ohmic contact formation Ohmic contact formation on p and n-type Hex SiGe Electrically pumped nanolaser Originally: Performance characteristics of an electrically pumped Hex-SiGe nanolaser Amendment: We will submit the outcome of a defect study. Websites, patent fillings, videos etc. (1) Deliverable website Set up project website for deliverablesProject logo ready Publikacje Peer reviewed articles (16) Efficient strain-induced light emission in lonsdaleite germanium Autorzy: Suckert, Jens René; Rödl, Claudia; Furthmüller, Jürgen; Bechstedt, Friedhelm; Botti, Silvana Opublikowane w: Phys.Rev.Materials, Numer 5(2), 2021, Strona(/y) 024602, ISSN 2475-9953 Wydawca: American Physical Society DOI: 10.1103/physrevmaterials.5.024602 Probing Lattice Dynamics and Electronic Resonances in Hexagonal Ge and Si x Ge 1– x Alloys in Nanowires by Raman Spectroscopy Autorzy: Diego de Matteis, Marta De Luca, Elham M. T. Fadaly, Marcel A. Verheijen, Miquel López-Suárez, Riccardo Rurali, Erik P. A. M. Bakkers, Ilaria Zardo Opublikowane w: ACS Nano, Numer 14/6, 2020, Strona(/y) 6845-6856, ISSN 1936-0851 Wydawca: American Chemical Society DOI: 10.1021/acsnano.0c00762 A Global-Optimization Study of the Phase Diagram of Free-Standing Hydrogenated Two-Dimensional Silicon Autorzy: Pedro Borlido, Miguel A. L. Marques, Silvana Botti Opublikowane w: The Journal of Physical Chemistry C, Numer 125/11, 2021, Strona(/y) 6298-6305, ISSN 1932-7447 Wydawca: American Chemical Society DOI: 10.1021/acs.jpcc.0c10753 Wurtzite InP microdisks: from epitaxy to room-temperature lasing Autorzy: Philipp Staudinger, Svenja Mauthe, Noelia Vico Triviño, Steffen Reidt, Kirsten E Moselund and Heinz Schmid Opublikowane w: Nanotechnology, Numer 32 (7), 2020, Strona(/y) 075605, ISSN 0957-4484 Wydawca: Institute of Physics Publishing DOI: 10.1088/1361-6528/abbb4e Epitaxial Ge 0.81 Sn 0.19 Nanowires for Nanoscale Mid-Infrared Emitters Autorzy: Michael S. Seifner, Alain Dijkstra, Johannes Bernardi, Andreas Steiger-Thirsfeld, Masiar Sistani, Alois Lugstein, Jos E. M. Haverkort, Sven Barth Opublikowane w: ACS Nano, Numer 13/7, 2019, Strona(/y) 8047-8054, ISSN 1936-0851 Wydawca: American Chemical Society DOI: 10.1021/acsnano.9b02843 Concurrent Zinc-Blende and Wurtzite Film Formation by Selection of Confined Growth Planes Autorzy: Philipp Staudinger, Svenja Mauthe, Kirsten E. Moselund, Heinz Schmid Opublikowane w: Nano Letters, Numer 18/12, 2018, Strona(/y) 7856-7862, ISSN 1530-6984 Wydawca: American Chemical Society DOI: 10.1021/acs.nanolett.8b03632 Accurate electronic and optical properties of hexagonal germanium for optoelectronic applications Autorzy: Claudia Rödl, Jürgen Furthmüller, Jens Renè Suckert, Valerio Armuzza, Friedhelm Bechstedt, Silvana Botti Opublikowane w: Physical Review Materials, Numer 3/3, 2019, Strona(/y) 034602, ISSN 2475-9953 Wydawca: American Institute of Physics DOI: 10.1103/physrevmaterials.3.034602 Forbidden Band-Edge Excitons of Wurtzite-GaP: A Theoretical View Autorzy: Abderrezak Belabbes, Friedhelm Bechstedt Opublikowane w: physica status solidi (b), Numer 256/2, 2019, Strona(/y) 1800238, ISSN 0370-1972 Wydawca: John Wiley & Sons Ltd. DOI: 10.1002/pssb.201800238 Exploring the Size Limitations of Wurtzite III–V Film Growth Autorzy: Philipp Staudinger, Kirsten E. Moselund, Heinz Schmid Opublikowane w: Nano Letters, Numer 20/1, 2019, Strona(/y) 686-693, ISSN 1530-6984 Wydawca: American Chemical Society DOI: 10.1021/acs.nanolett.9b04507 Temperature-Dependent Refractive Index of Quartz at Terahertz Frequencies Autorzy: Christopher L. Davies, Jay B. Patel, Chelsea Q. Xia, Laura M. Herz, Michael B. Johnston Opublikowane w: Journal of Infrared, Millimeter, and Terahertz Waves, Numer 39/12, 2018, Strona(/y) 1236-1248, ISSN 1866-6892 Wydawca: Springer Verlag DOI: 10.1007/s10762-018-0538-7 Direct-bandgap emission from hexagonal Ge and SiGe alloys Autorzy: Elham M. T. Fadaly, Alain Dijkstra, Jens Renè Suckert, Dorian Ziss, Marvin A. J. van Tilburg, Chenyang Mao, Yizhen Ren, Victor T. van Lange, Ksenia Korzun, Sebastian Kölling, Marcel A. Verheijen, David Busse, Claudia Rödl, Jürgen Furthmüller, Friedhelm Bechstedt, Julian Stangl, Jonathan J. Finley, Silvana Botti, Jos E. M. Haverkort, Erik P. A. M. Bakkers Opublikowane w: Nature, Numer 580/7802, 2020, Strona(/y) 205-209, ISSN 0028-0836 Wydawca: Nature Publishing Group DOI: 10.1038/s41586-020-2150-y Three-dimensional cross-nanowire networks recover full terahertz state Autorzy: Kun Peng, Dimitars Jevtics, Fanlu Zhang, Sabrina Sterzl, Djamshid A. Damry, Mathias U. Rothmann, Benoit Guilhabert, Michael J. Strain, Hark H. Tan, Laura M. Herz, Lan Fu, Martin D. Dawson, Antonio Hurtado, Chennupati Jagadish, Michael B. Johnston Opublikowane w: Science, Numer 368/6490, 2020, Strona(/y) 510-513, ISSN 0036-8075 Wydawca: American Association for the Advancement of Science DOI: 10.1126/science.abb0924 Entropy-controlled fully reversible nanostructure formation of Ge on miscut vicinal Si(001) surfaces Autorzy: Christian Grossauer, Vaclav Holy, Gunther Springholz Opublikowane w: Physical Review B, Numer 102/7, 2020, Strona(/y) 075420 1-13, ISSN 2469-9950 Wydawca: American Physical Society DOI: 10.1103/physrevb.102.075420 Unveiling Planar Defects in Hexagonal Group IV Materials Autorzy: Elham M. T. Fadaly, Anna Marzegalli, Yizhen Ren, Lin Sun, Alain Dijkstra, Diego de Matteis, Emilio Scalise, Andrey Sarikov, Marta De Luca, Riccardo Rurali, Ilaria Zardo, Jos E. M. Haverkort, Silvana Botti, Leo Miglio, Erik P. A. M. Bakkers, Marcel A. Verheijen Opublikowane w: Nano Letters, Numer 21/8, 2021, Strona(/y) 3619-3625, ISSN 1530-6984 Wydawca: American Chemical Society DOI: 10.1021/acs.nanolett.1c00683?rel=cite-as&ref=pdf&jav=vor Point defects in hexagonal silicon Autorzy: Lin Sun; Mário R. G. Marques; Miguel A. L. Marques; Silvana Botti Opublikowane w: Phys Rev Mat, Numer 24759953, 2021, Strona(/y) 064605, ISSN 2475-9953 Wydawca: American Physical Society DOI: 10.1103/physrevmaterials.5.064605 Hexagonal silicon grown from higher order silanes Autorzy: Yizhen Ren, Philipp Leubner, Marcel A Verheijen, Jos E M Haverkort, Erik P A M Bakkers Opublikowane w: Nanotechnology, Numer 30/29, 2019, Strona(/y) 295602, ISSN 0957-4484 Wydawca: Institute of Physics Publishing DOI: 10.1088/1361-6528/ab0d46 Prawa własności intelektualnej Patent (4) Light emission from hexagonal SiGe Numer wniosku/publikacji: US TUE-284 Data: 2019-02-18 Light emission from hexagonal SiGe Numer wniosku/publikacji: US TUE-284 Data: 2019-02-18 Wnioskodawca/wnioskodawcy: FRIEDRICH-SCHILLER-UNIVERSITÄT JENA Light emission from hexagonal SiGe Numer wniosku/publikacji: US TUE-284 Data: 2019-02-18 Light emission from hexagonal SiGe Numer wniosku/publikacji: US TUE-284 Data: 2019-02-18 Wyszukiwanie danych OpenAIRE... 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