TowARds Advanced bicmos NanoTechnology platforms for rf and thz applicatiOns

Risultati finali

114_Report on device optimizations towards fmax=600GHz

Report on device optimizations towards Fmax = 600GHz Beneficiaries: IFAG, IFD, ST-Cr2, ST-Fr, IHP

4110_Final Publishable Summary
432_Final exploitation plan report
421_1st Report on dissemination activities
351_Intermediate report on System-level integration, simulation and characterization of targeted application circuits
122_Final report on device optimizations and BICMOS integration

Final report on device optimizations and BiCMOS integration Beneficiaries: IFAG, IFD, ST-Cr2, ST-Fr, IHP

311_Report about IC for B11HFC/BiCMOS055 technology platform demo design

D3.1.1 Report about IC for B11HFC/BiCMOS055 technology platform demo design

423_Final Report on dissemination activities
431_Intermediate exploitation plan report

Pubblicazioni

A Compact Monostatic Transceiver Topology Using a Diode-Based Mixer

Autori: Badou Sene, Herbert Knapp, Daniel Reiter, Nils Pohl
Pubblicato in: 2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2021, Pagina/e 7-10, ISBN 978-1-6654-0407-5
Editore: IEEE
DOI: 10.1109/sirf51851.2021.9383332

mm-Wave Through-Load Switch for in-situ Vector Network Analyzer on a 55-nm BiCMOS Technology

Autori: M. Margalef-Rovira, A. A. Saadi, S. Bourdel, M. J. Barragan, E. Pistono, C. Gaquiere, P. Ferrari
Pubblicato in: 2020 18th IEEE International New Circuits and Systems Conference (NEWCAS), 2020, Pagina/e 82-85, ISBN 978-1-7281-7044-2
Editore: IEEE
DOI: 10.1109/newcas49341.2020.9159829

A Switchable, Passively Tuneable 28 GHz to 39 GHz Upconversion Link for a 5G Repeater using a Broadside Coupler and Analog Predistortion in a 130 nm BiCMOS Technology

Autori: Julian Potschka, Julian Zuber, Katharina Kolb, Tim Maiwald, Marco Dietz, Amelie Hagelauer, Klaus Aufinger, Robert Weigel
Pubblicato in: 2020 18th IEEE International New Circuits and Systems Conference (NEWCAS), 2020, Pagina/e 30-33, ISBN 978-1-7281-7044-2
Editore: IEEE
DOI: 10.1109/newcas49341.2020.9159779

A 1-to-4 SiGe BiCMOS analog demultiplexer sampling front-end for a 116 GBaud-receiver

Autori: P. Thomas, T. Tannert, M. Grözing, X.-Q. Du, and M. Berroth
Pubblicato in: 2021
Editore: EuMA

SiGe HBT Device Characterization up-to 500 GHz: Procedure and Layout Improvement of Calibration Standards

Autori: S. R. Panda, M. Cabbia, S. Fregonese, M. Deng, A. Chakravorty, T. Zimmer
Pubblicato in: ICEE conference, 2020
Editore: ICEE

A 120 GS/s 2:1 Analog Multiplexer with High Linearity in SiGe-BiCMOS Technology

Autori: Michael Collisi, Michael Moller
Pubblicato in: 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2020, Pagina/e 1-4, ISBN 978-1-7281-9749-4
Editore: IEEE
DOI: 10.1109/bcicts48439.2020.9392970

A Full D-Band Low Noise Amplifier in 130 nm SiGe BiCMOS using Zero-Ohm Transmission Lines

Autori: T. Maiwald, J. Potschka, K. Kolb, M. Dietz, K. Aufinger, A. Visweswaran and R. Weigel
Pubblicato in: 2021
Editore: EuMA

Vector Modulator Phase Shifters in 130-nm SiGe BiCMOS Technology for 5G Applications

Autori: Aniello Franzese, M. H. Eissa, Dietmar Kissinger, Andrea Malignaggi
Pubblicato in: 2021 IEEE Radio and Wireless Symposium (RWS), 2021, Pagina/e 64-66, ISBN 978-1-7281-8062-5
Editore: IEEE
DOI: 10.1109/rws50353.2021.9360395

Meander-Type Transmission Line Design for On-Wafer TRL Calibration up to 330 GHz

Autori: Marco Cabbia, Marina Deng, Sebastien Fregonese, Chandan Yadav, Arnaud Curutchet, Magali De Matos, Didier Celi, Thomas Zimmer
Pubblicato in: 2020 50th European Microwave Conference (EuMC), 2021, Pagina/e 979-982, ISBN 978-2-87487-059-0
Editore: IEEE
DOI: 10.23919/eumc48046.2021.9338177

A 122-242 GHz dynamic frequency divider in an advanced BiCMOS technology

Autori: B. Sene, H. Knapp, D. Reiter, and N. Pohl
Pubblicato in: 50th European Microwave Conference, 2021
Editore: EuMA

32-GS/s SiGe Track-and-Hold Amplifier with 58-GHz Bandwidth and −64-dBc to −29-dBc HD3

Autori: Philipp Thomas, Markus Grozing, Manfred Berroth
Pubblicato in: 2020 27th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2020, Pagina/e 1-4, ISBN 978-1-7281-6044-3
Editore: IEEE
DOI: 10.1109/icecs49266.2020.9294815

52.1 Tb/s C-band DCI transmission over DCI distances at 52.1 Tb/s C-Band DCI Transmission over DCI Distances at 1.49 Tb/s/λ.49\ \text{Tb}/\mathrm{s}/\lambda$

Autori: Fred Buchali, Vahid Aref, Mathieu Chagnon, Roman Dischler, Horst Hettrich, Rolf Schmid, Michael Moeller
Pubblicato in: 2020 European Conference on Optical Communications (ECOC), 2020, Pagina/e 1-4, ISBN 978-1-7281-7361-0
Editore: IEEE
DOI: 10.1109/ecoc48923.2020.9333182

150 GHz Differential Amplifiers with Lumped-Elements Matching Networks in 55 nm SiGe BiCMOS

Autori: Ibrahim Petricli, Hadi Lotfi, Andrea Mazzanti
Pubblicato in: 2020 27th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2020, Pagina/e 1-4, ISBN 978-1-7281-6044-3
Editore: IEEE
DOI: 10.1109/icecs49266.2020.9294979

A 79GHz 4RX-2TX SiGe-Integrated Sequential Sampling Pulse Radar

Autori: Alexander Leibetseder, Christoph Wagner, Andreas Stelzer
Pubblicato in: 2020 IEEE MTT-S International Conference on Microwaves for Intelligent Mobility (ICMIM), 2020, Pagina/e 1-4, ISBN 978-1-7281-6755-8
Editore: IEEE
DOI: 10.1109/icmim48759.2020.9299079

Diode-Coupled Noise-Scalable Multi-Core BiCMOS VCOs

Autori: Domenico Riccardi, Andrea Mazzanti
Pubblicato in: 2020 27th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2020, Pagina/e 1-4, ISBN 978-1-7281-6044-3
Editore: IEEE
DOI: 10.1109/icecs49266.2020.9294967

Broadband 110 - 170 GHz True Time Delay Circuit in a 130-nm SiGe BiCMOS Technology

Autori: Alper Karakuzulu, Mohamed Hussein Eissa, Dietmar Kissinger, Andrea Malignaggi
Pubblicato in: 2020 IEEE/MTT-S International Microwave Symposium (IMS), 2020, Pagina/e 775-778, ISBN 978-1-7281-6815-9
Editore: IEEE
DOI: 10.1109/ims30576.2020.9223843

Dual-Polarized Dielectric Resonator Antenna Array for 5G Mobile Radio Base Stations

Autori: Jerzy Kowalewski, Alisa Jauch, Joerg Eisenbeis, Soren Marahrens, Karina Schneider, Thomas Zwick
Pubblicato in: 2020 14th European Conference on Antennas and Propagation (EuCAP), 2020, Pagina/e 1-4, ISBN 978-88-31299-00-8
Editore: IEEE
DOI: 10.23919/eucap48036.2020.9135931

Non-linear analysis of a Broadband Power Amplifier at 300 GHz

Autori: Haitham Ghanem, Benjamin Schoch, Ingmar Kallfass, Pascal Szriftgiser, Malek Zegaoui, Mohammed Zaknoune, François Danneville and Guillaume Ducournau
Pubblicato in: 15th European Microwave Integrated Circuits Conference (EuMIC), 2021
Editore: EuMA

A Downconversion Link for a 5G Repeater using a Passive Power Adjustment Technique and Analog Predistortion

Autori: J. Potschka et al.
Pubblicato in: 2021
Editore: EuMA

An Oscillation-Based Test technique for on-chip testing of mm-wave phase shifters

Autori: M. Margalef-Rovira, M. J. Barragan, P. Ferrari, and E. Pistono
Pubblicato in: IEEE VLSI Test Symposium 2018, 2018
Editore: IEEE

Path based MIMO channel model for hybrid beamforming architecture analysis

Autori: J. Eisenbeis, M. Krause, T. Mahler, S. Scherr, and T. Zwick
Pubblicato in: 11th German Microwave Conference (GeMiC), 2018, 2018
Editore: 11th German Microwave Conference (GeMiC), 2018

Multi-rate signal processing based model for high speed digitizers

Autori: P. Monsurrò, A. Trifiletti, L. Angrisani, M. D’Arco
Pubblicato in: International Instrumentation and Measurement Technology Conference, 2017
Editore: IEEE

Harmonic distortion analysis of InP HBTs with 650 GHz fmax for high data rate communication systems

Autori: P. Sakalas, M. Schroter, T. Nardmann, H. Zirath
Pubblicato in: IEEE Compound Semiconductor Circuit Symposium (CSICS), 2017
Editore: IEEE

SiGe HBT / CMOS process thermal budget co-optimization in a 55-nm CMOS node

Autori: A. Gauthier, P. Chevalier, G. Avenier, G. Ribes, M.-L. Rellier, Y. Campidelli, R. Beneyton, D. Celi, G. Haury, C. Gaquiere
Pubblicato in: 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2017, Pagina/e 58-61, ISBN 978-1-5090-6383-3
Editore: IEEE
DOI: 10.1109/BCTM.2017.8112911

High-Frequency SiGe HBTs for Communication, Radar and Imaging

Autori: B. Heinemann
Pubblicato in: Compound Semiconductor Week (CSW), 2017
Editore: Compound Semiconductor Week (CSW)

High Performance SiGe HBT BiCMOS Technology

Autori: H. Rücker, B Heinemann
Pubblicato in: IEEE RFIC Workshop: Silicon Technologies for mmWave Applications, 2017
Editore: IEEE

High Performance SiGe BiCMOS Technology

Autori: H. Rücker, B Heinemann
Pubblicato in: German Microwave Week (GeMIC), 2018
Editore: German Microwave Week (GeMIC)

SiGe BiCMOS Technology for mm-Wave Applications – an Overview

Autori: K. Aufinger, J. Boeck, H. Knapp, W. Liebl, D. Manger, T. F. Meister, R. Lachner
Pubblicato in: 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Applications, 2018
Editore: IEEE

Beyond 100 GHz: High frequency device characterization for THz applications

Autori: T. Zimmer, S. Fregonese, M. Deng
Pubblicato in: 2nd Sino MOS-AK Workshop, 2017
Editore: MosAk web page

Importance of complete characterization setup on on-wafer TRL calibration in sub-THz range

Autori: C. Yadav, M. Deng, M. De Matos, S. Fregonese, T. Zimmer
Pubblicato in: IEEE International Conference on Microelectronic Test Structures, 2018
Editore: IEEE

Design of Silicon On-Wafer Sub-THz Calibration Kit

Autori: M. Deng, S. Fregonese, D. Céli, P. Chevalier, M. De Matos, T. Zimmer
Pubblicato in: IEEE Mediterranean Microwave Symposium 2017, 2017
Editore: IEEE

Frequency analysis of the penetration depth of the heat flow in SiGe HBTs

Autori: R. D'Esposito, S. Fregonese, S. Balanethiram, and T. Zimmer
Pubblicato in: 29th BipAk, 2017
Editore: BipAK web page

A 130 to 170 GHz integrated noise source based on avalanche silicon Schottky diode in BiCMOS 55 nm for in-situ noise characterization

Autori: Joao Carlos Azevedo Goncalves, Thomas Quemerais, Daniel Gloria, Gregory Avenier, Sylvie Lepilliet, Guillaume Ducournau, Christophe Gaquiere, Francois Danneville
Pubblicato in: 2017 International Conference of Microelectronic Test Structures (ICMTS), 2017, Pagina/e 1-3, ISBN 978-1-5090-3615-8
Editore: IEEE
DOI: 10.1109/ICMTS.2017.7954271

A G band +2 dBm balanced frequency doubler in 55 nm SiGe BiCMOS

Autori: W. Aouimeur, J. Moron-Guerra, A. Serhan, S. Lepilliet, T. Quemerais, D. Gloria, E. Lauga-Larroze, J.-D. Arnould, C. Gaquiere
Pubblicato in: 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2017, Pagina/e 60-63, ISBN 978-1-5090-5237-0
Editore: IEEE
DOI: 10.1109/SIRF.2017.7874371

Low Frequency Noise in advanced 55nm BiCMOS SiGeC Heterojunction Bipolar Transistors: Impact of collector doping

Autori: B. Sagnes, F. Pascal, M. Seif, A. Hoffmann, S. Haendler, P. Chevalier, D. Gloria
Pubblicato in: 2017 International Conference on Noise and Fluctuations (ICNF), 2017, Pagina/e 1-4, ISBN 978-1-5090-2760-6
Editore: IEEE
DOI: 10.1109/ICNF.2017.7986001

Characterization, modeling and comparison of 1/f noise in Si/SiGe:C HBTs issued from three advanced BiCMOS technologies

Autori: M. Seif, F. Pascal, B. Sagnes, J. Elbeyrouthy, A. Hoffmann, S. Haendler, P. Chevalier, D. Gloria
Pubblicato in: 2017 29th International Conference on Microelectronics (ICM), 2017, Pagina/e 1-4, ISBN 978-1-5386-4049-4
Editore: IEEE
DOI: 10.1109/ICM.2017.8268847

Avalanche compact model featuring SiGe HBTs characteristics up to BVcbo

Autori: Mathieu Jaoul, Didier Celi, Cristell Maneux, Michael Schroter, Andreas Pawlak
Pubblicato in: 2017 47th European Solid-State Device Research Conference (ESSDERC), 2017, Pagina/e 70-73, ISBN 978-1-5090-5978-2
Editore: IEEE
DOI: 10.1109/essderc.2017.8066594

Importance of complete characterization setup on on-wafer TRL calibration in sub-THz range

Autori: Chandan Yadav, Marina Deng, Magali De Matos, Sebastien Fregonese, Thomas Zimmer
Pubblicato in: 2018 IEEE International Conference on Microelectronic Test Structures (ICMTS), 2018, Pagina/e 197-201, ISBN 978-1-5386-5071-4
Editore: IEEE
DOI: 10.1109/icmts.2018.8383798

New SiGe Technologies with Cut-off Frequencies towards 600 GHz and their Potential Impact on Future mmW Sensing in Automotive and Industrial Applications

Autori: W. Liebl, D. Manger, A. Pribil, S. Rothenhäußer, J. Böck, K. Aufinger
Pubblicato in: IEEE IMS Workshop : Integrated mm Wave Sensing Technology for Automotive, Industrial and Healthcare, 2018
Editore: IEEE

SiGe BiCMOS Current Status and Future Trends in Europe

Autori: Pascal Chevalier, Wolfgang Liebl, Holger Rucker, Alexis Gauthier, Dirk Manger, Bernd Heinemann, Gregory Avenier, Josef Bock
Pubblicato in: 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018, Pagina/e 64-71, ISBN 978-1-5386-6502-2
Editore: IEEE
DOI: 10.1109/bcicts.2018.8550963

Integration of SiGe HBT with <tex>$\text{f}_{\text{T}}=305\ \text{GHz},\ \text{f}_{\max}=537 \text{GHz}$</tex> in 130nm and 90nm CMOS

Autori: D. Manger, W. Liebl, S. Boguth, B. Binder, K. Aufinger, C. Dahl, C. Hengst, A. Pribil, J. Oestreich, S. Rohmfeld, S. Rothenhaeusser, D. Tschumakow, J. Boeck
Pubblicato in: 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018, Pagina/e 76-79, ISBN 978-1-5386-6502-2
Editore: IEEE
DOI: 10.1109/bcicts.2018.8550922

Prevention of Temperature-Induced Dewetting of Implanted SOI via Heated Ion Implantation

Autori: Julien Borrel, Alexis Gauthier, Fabien Deprat, Vincent Lu, Francesco Abbate, Sylvain Joblot, Laurent-Renaud Clement, Heloise Tupin, Wei Zou, Edwin Arevalo, Pascal Chevalier, Didier Dutartre
Pubblicato in: 2018 22nd International Conference on Ion Implantation Technology (IIT), 2018, Pagina/e 29-32, ISBN 978-1-5386-6829-0
Editore: IEEE
DOI: 10.1109/iit.2018.8807965

450 GHz <tex>$f_{\text{T}}$</tex> SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS Node

Autori: A. Gauthier, J. Borrel, P. Chevalier, G. Avenier, A. Montagne, M. Juhel, R. Duru, L. -R. Clement, C. Borowiak, M. Buczko, C. Gaquiere
Pubblicato in: 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018, Pagina/e 72-75, ISBN 978-1-5386-6502-2
Editore: IEEE
DOI: 10.1109/bcicts.2018.8551057

On Wafer Millimetre Wave Power Detection Using a PN Junction Diode in BiCMOS 55 nm for In-Situ Large Signal Characterization

Autori: Joao CarlosAzevedo Goncalves, Issa Alaji, Daniel Gloria, Vincent Gidel, Frederic Gianesello, Sylvie Lepilliet, Guillaume Ducournau, Francois Danneville, Christophe Gaquiere
Pubblicato in: 2018 48th European Microwave Conference (EuMC), 2018, Pagina/e 37-40, ISBN 978-2-87487-051-4
Editore: IEEE
DOI: 10.23919/eumc.2018.8541387

Impact of on-Silicon De-Embedding Test Structures and RF Probes Design in the Sub-THz Range

Autori: Chandan Yadav, Marina Deng, Sebastien Fregonese, Magali DeMatos, Bernard Plano, Thomas Zimmer
Pubblicato in: 2018 48th European Microwave Conference (EuMC), 2018, Pagina/e 21-24, ISBN 978-2-87487-051-4
Editore: IEEE
DOI: 10.23919/eumc.2018.8541392

Physical, small-signal and pulsed thermal impedance characterization of multi-finger SiGe HBTs close to the SOA edges

Autori: Marine Couret, Gerhard Fischer, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux
Pubblicato in: 2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS), 2019, Pagina/e 154-159, ISBN 978-1-7281-1466-8
Editore: IEEE
DOI: 10.1109/icmts.2019.8730964

Analysis of Test Structure Design Induced Variation in on Si On-wafer TRL Calibration in sub-THz

Autori: Chandan Yadav, Sebastien Fregonese, Marina Deng, Marco Cabbia, Magali De Matos, Mathieu Jaoul, Thomas Zimmer
Pubblicato in: 2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS), 2019, Pagina/e 132-136, ISBN 978-1-7281-1466-8
Editore: IEEE
DOI: 10.1109/icmts.2019.8730962

Localization of 1/f noise sources in Si/SiGe:C HBTs

Autori: M. Seif, F. Pascal, B. Sagnes, J. Elbeyrouthy, A. Hoffmann, S. Haendler, P. Chevalier, and D. Gloria
Pubblicato in: 8th Int. Conf. Unsolved Probl. Noise - UPON 2018, 2018
Editore: 8th Int. Conf. Unsolved Probl. Noise - UPON 2018

A 25.6-GS/s 40-GHz 1-dB BW Current-Mode Track and Hold Circuit with more than 5-ENOB

Autori: Xuan-Quang Du, Markus Grozing, Manfred Berroth
Pubblicato in: 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018, Pagina/e 56-59, ISBN 978-1-5386-6502-2
Editore: IEEE
DOI: 10.1109/bcicts.2018.8550855

Analysis of Spatial Overlap Constellations in Hybrid Beamforming Communication Systems

Autori: Joerg Eisenbeis, Pablo Ramos Lopez, Tobias Mahler, Thomas Zwick
Pubblicato in: 2018 IEEE-APS Topical Conference on Antennas and Propagation in Wireless Communications (APWC), 2018, Pagina/e 909-912, ISBN 978-1-5386-6765-1
Editore: IEEE
DOI: 10.1109/apwc.2018.8503675

A SiGe 122-GHz FMCW Radar Sensor with 21.5 dBm EIRP based on a 43-Element Antenna Array in an eWLB Package

Autori: Muhammad Furqan, Faisal Ahmed, Andreas Stelzer
Pubblicato in: 2018 IEEE MTT-S International Conference on Microwaves for Intelligent Mobility (ICMIM), 2018, Pagina/e 1-4, ISBN 978-1-5386-1725-0
Editore: IEEE
DOI: 10.1109/icmim.2018.8443564

120-GHz and 240-GHz Broadband Bow-Tie Antennas in eWLB Package for High Resolution Radar Applications

Autori: Faisal Ahmed, Muhammad Furqan, Andreas Stelzer
Pubblicato in: 2018 48th European Microwave Conference (EuMC), 2018, Pagina/e 1109-1112, ISBN 978-2-87487-051-4
Editore: IEEE
DOI: 10.23919/eumc.2018.8541732

180 Gb/s 64QAM Transmission Over 480 km Using a DFB Laser and a Kramers-Kronig Receiver

Autori: Karsten Schuh, Son T. Le
Pubblicato in: 2018 European Conference on Optical Communication (ECOC), 2018, Pagina/e 1-3, ISBN 978-1-5386-4862-9
Editore: IEEE
DOI: 10.1109/ecoc.2018.8535277

On the use of Drift-Diffusion and Hydrodynamic Transport Models for Simulating the Negative Differential Mobility Effect

Autori: G. Wedel, T. Nardmanrr, M. Schroter
Pubblicato in: 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018, Pagina/e 1-4, ISBN 978-1-5386-6502-2
Editore: IEEE
DOI: 10.1109/bcicts.2018.8550970

Modeling High-Current Effects in Bipolar Transistors: A Theory Review

Autori: M. Schroter, S. Falk
Pubblicato in: 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018, Pagina/e 219-222, ISBN 978-1-5386-6502-2
Editore: IEEE
DOI: 10.1109/bcicts.2018.8551078

W-band low-power millimeter-wave low noise amplifiers (LNAs)using SiGe HBTs in saturation region

Autori: A. Mukherjee, W. Liang, P. Sakalas, A. Pawlak, M. Schroter
Pubblicato in: 2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2019, Pagina/e 1-4, ISBN 978-1-5386-5950-2
Editore: IEEE
DOI: 10.1109/sirf.2019.8709134

5×510 Gbps Single-Polarization Direct-Detection WDM Transmission over 80 km of SSMF

Autori: Son Thai Le, Karsten Schuh, Roman Dischler, Fred Buchali, Laurent Schmalen, Henning Buelow
Pubblicato in: Optical Fiber Communication Conference (OFC) 2019, 2019, Pagina/e Tu2B.1, ISBN 978-1-943580-53-8
Editore: OSA
DOI: 10.1364/ofc.2019.tu2b.1

1.6Tbps WDM Direct Detection Transmission with Virtual-Carrier over 1200km

Autori: Son Thai Le, Karsten Schuh, Mathieu Chagnon, Fred Buchali, Henning Buelow
Pubblicato in: Optical Fiber Communication Conference, 2018, Pagina/e Tu2D.5, ISBN 978-1-943580-38-5
Editore: OSA
DOI: 10.1364/ofc.2018.tu2d.5

A 112-GS/s 1-to-4 ADC front-end with more than 35-dBc SFDR and 28-dB SNDR up to 43-GHz in 130-nm SiGe BiCMOS

Autori: X.-Q. Du, M. Grozing, A. Uhl, S. Park, F. Buchali, K. Schuh, S.T. Le, M. Berroth
Pubblicato in: 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2019, Pagina/e 215-218, ISBN 978-1-7281-1701-0
Editore: IEEE
DOI: 10.1109/rfic.2019.8701786

Effects of Total Ionizing Dose on I-V and Low Frequency Noise characteristics in advanced Si/SiGe:C Heterojunction Bipolar Transistors

Autori: J. Elbeyrouthy, A. Vauthelin, M. Seif, B. Sagnes, F. Pascal, A.Hoffmann, M. Valenza, J. Boch, T. Maraine, S. Haendler, A. Gauthier, P. Chevalier, and D. Gloria
Pubblicato in: 30th European Conference on Radiation and its Effects on Components and Systems - RADECS 2019, 2019
Editore: 30th European Conference on Radiation and its Effects on Components and Systems - RADECS 2019

Mm-wave circuit design for device characterization and model verification

Autori: Y. Zhang, W.-F. Liang, and M. Schröter
Pubblicato in: HICUM Workshop, 2019
Editore: HICUM Workshop

Mathematical foundation for constructing accurate dynamic bipolar transistor compact models

Autori: M. Schroter, M. Krattenmacher
Pubblicato in: 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019, Pagina/e 1-4, ISBN 978-1-7281-0586-4
Editore: IEEE
DOI: 10.1109/bcicts45179.2019.8972737

Towards 600 to 700 GHz fMAX SiGe BiCMOS platforms in Europe

Autori: P. Chevalier, W. Liebl, H. Rücker, A. Gauthier, D. Manger, B. Heinemann, G. Avenier, and J. Böck
Pubblicato in: 49th European Microwave Week. Presented at EuMIC/TARANTO Workshop “Recent Advances in SiGe BiCMOS: Technologies, Modelling and Circuits for 5G, Radar and Imaging, 2019
Editore: 49th European Microwave Week

1.52 Tb/s single carrier transmission supported by a 128 GSa/s SiGe DAC

Autori: Fred Buchali, Vahid Aref, Mathieu Chagnon, Karsten Schuh, Horst Hettrich, Anna Bielik, Lars Altenhain, Markus Guntermann, rolf Schmid, Michael Moeller
Pubblicato in: Optical Fiber Communication Conference Postdeadline Papers 2020, 2020, Pagina/e Th4C.2, ISBN 978-1-943580-75-0
Editore: OSA
DOI: 10.1364/ofc.2020.th4c.2

Low frequency noise characterization and modeling of SiGe HBT featuring LASER annealing in a 55-nm CMOS node

Autori: J. Elbeyrouthy, A. Vauthelin, B. Sagnes, F. Pascal, A.Hoffmann, M. Valenza, S. Haendler, A. Gauthier, P. Chevalier, D. Gloria
Pubblicato in: 25th International Conference on Noise and Fluctuations - ICNF 2019, 2019
Editore: ICNF 2019

Modelling and Simulation of Heterojunction Bipolar Transistors for THz Applications

Autori: T. Zimmer, M. Deng, C. Mukherjee, C. Maneux, and S. Fregonese
Pubblicato in: XXth Int. Workshop on The Physics of Semiconductor Devices, 2019
Editore: XXth Int. Workshop on The Physics of Semiconductor Devices

TCAD simulation and assessment of anomalous deflection in measured S-parameters of SiGe HBTs in THz range

Autori: Soumya Ranjan Panda, Sebastien Fregonese, Anjan Chakravorty, Thomas Zimmer
Pubblicato in: 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019, Pagina/e 1-4, ISBN 978-1-7281-0586-4
Editore: IEEE
DOI: 10.1109/bcicts45179.2019.8972760

On the Design of Antennas in eWLB Package for Radar Applications above 100 GHz

Autori: Faisal Ahmed, Muhammad Furqan, Andreas Stelzer
Pubblicato in: 2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2019, Pagina/e 145-147, ISBN 978-1-7281-0936-7
Editore: IEEE
DOI: 10.1109/imws-amp.2019.8880139

A 112-142GHz Power Amplifier with Regenerative Reactive Feedback achieving 17dBm peak P sat at 13% PAE

Autori: Akshay Visweswaran, Bastien Vignon, Xinyan Tang, Steven Brebels, Bjorn Debaillie, Piet Wambacq
Pubblicato in: ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC), 2019, Pagina/e 337-340, ISBN 978-1-7281-1550-4
Editore: IEEE
DOI: 10.1109/esscirc.2019.8902764

In-Situ Calibration and De-Embedding Test Structure Design for SiGe HBT On-Wafer Characterization up to 500 GHz

Autori: M. Cabbia, M. Deng, S. Fregonese, M. De Matos, D. Celi, T. Zimmer
Pubblicato in: 2020 94th ARFTG Microwave Measurement Symposium (ARFTG), 2020, Pagina/e 1-4, ISBN 978-1-7281-2056-0
Editore: IEEE
DOI: 10.1109/arftg47584.2020.9071733

D/A and A/D Conversion Key ICs for Broadband Communications

Autori: M. Grözing, X.-Q. Du, P. Thomas, T. Tannert, M. Berroth, F. Centurelli, P. Tommasino, A. Trifiletti, M. Collisi, M. Möller, H. Hettrich, A. Bielik, R. Schmid, K. Schuh, and F. Buchali
Pubblicato in: 49th European Microwave Week. Presented at EuMIC/TARANTO Workshop “Recent Advances in SiGe BiCMOS: Technologies, Modelling and Circuits for 5G, Radar and Imaging, 2019
Editore: 49th European Microwave Week

Mm-wave SiGe SoC: E & D band TRX front-end for P2P radio links

Autori: A. Fonte, et al.
Pubblicato in: 49th European Microwave Week. Presented at EuMIC/TARANTO Workshop “Recent Advances in SiGe BiCMOS: Technologies, Modelling and Circuits for 5G, Radar and Imaging, 2019
Editore: 49th European Microwave Week

Impact of SiGe HBT hot-carrier degradation on the broadband amplifier output supply current

Autori: Marine Couret, Gerhard Fischer, Iria Garcia-Lopez, Magali De Matos, Francois Marc, Cristell Maneux
Pubblicato in: ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019, Pagina/e 154-157, ISBN 978-1-7281-1539-9
Editore: IEEE
DOI: 10.1109/essderc.2019.8901781

82 GHz direct up-converter mixer using double-balanced Gilbert cell with sensitivity analysis at mm-wave frequency

Autori: Ahmed Omar, A. Mukherjee, W. Liang, Y. Zhang, P. Sakalas, Michael Schroter
Pubblicato in: 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019, Pagina/e 1-4, ISBN 978-1-7281-0586-4
Editore: IEEE
DOI: 10.1109/bcicts45179.2019.8972765

Exploration of fmax

Autori: B. Saha, S. Fregonese, A. Chakravorty, and T. Zimmer
Pubblicato in: 32th BipAk, 2019
Editore: 32th BipAk

Design of A D-band Transformer-Based Neutralized Class-AB Power Amplifier in Silicon Technologies

Autori: Xinyan Tang, Alaaeldien Medra, Johan Nguyen, Khaled Khalaf, Bjorn Debaillie, Piet Wambacq
Pubblicato in: 2019 17th IEEE International New Circuits and Systems Conference (NEWCAS), 2019, Pagina/e 1-4, ISBN 978-1-7281-1031-8
Editore: IEEE
DOI: 10.1109/newcas44328.2019.8961277

Noise and power characterization in mm-wave and sub-mmave frequencies

Autori: I. Alaji, W. Aouimer, E. Brezza, S. Bouvot, A. Bossuet, R. Debroucke, V. Fiorese, A. Gauthier, H. Ghanem, V. Gidel, J. Goncalves, C. Maye, S. Oeuvrard, A. Pottrain, T. Quemerais, P. Chevalier, F. Danneville, G. Ducournau, D Gloria, and C. Gaquiere
Pubblicato in: 49th European Microwave Week. Presented at EuMIC/TARANTO Workshop “Recent Advances in SiGe BiCMOS: Technologies, Modelling and Circuits for 5G, Radar and Imaging, 2019
Editore: 49th European Microwave Week

Collector-substrate modeling of SiGe HBTs up to THz range

Autori: Bishwadeep Saha, Sebastien Fregonese, Soumya Ranjan Panda, Anjan Chakravorty, Didier Celi, Thomas Zimmer
Pubblicato in: 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019, Pagina/e 1-4, ISBN 978-1-7281-0586-4
Editore: IEEE
DOI: 10.1109/bcicts45179.2019.8972745

A 16-dBm D-Band Power Amplifier with a Cascaded CE and CB Output Power Stage Using a Stub Matching Topology

Autori: Badou Sene, Herbert Knapp, Hao Li, Jonas Kammerer, Soran Majied, Klaus Aufinger, Jonas Fritzin, Daniel Reiter, Nils Pohl
Pubblicato in: 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019, Pagina/e 1-4, ISBN 978-1-7281-0586-4
Editore: IEEE
DOI: 10.1109/bcicts45179.2019.8972772

Collector avalanche effect compact modeling in Si BJTs and SiGe HBTs - A review

Autori: M. Schröter, and V. d'Alessandro
Pubblicato in: HICUM Workshop, 2019
Editore: HICUM Workshop

An Integrated 79 GHz Sequential Sampling Pulse Radar

Autori: A. Leibetseder, C. Wagner, A. Stelzer
Pubblicato in: 2019 IEEE MTT-S International Microwave Symposium (IMS), 2019, Pagina/e 424-427, ISBN 978-1-7281-1309-8
Editore: IEEE
DOI: 10.1109/mwsym.2019.8700755

Modélisation d'une Source de Bruit à Diode Schottky en Technologie SiGe BiCMOS 55 nm en Bandes Millimétriques (<300 GHz)

Autori: H. Ghanem, J-C. Azevedo-Gonçalves, I. Alaji, W. Aouimeur, D. Gloria, S. Lépilliet, C. Gaquière, F. Danneville, and G. Ducournau
Pubblicato in: 21e Journées Nationales Microondes (JNM), 2019
Editore: Journées Nationales Microondes

TCAD versus high frequency measurements of SiGe HBTs

Autori: S. R. Panda, S. Fregonese, A. Chakravorty, and T. Zimmer
Pubblicato in: 32th BipAk, 2019
Editore: 32th BipAk

Premier banc de mesure load-pull hybride pour la caractérisation des transistors HBT en technologie BiCMOS 55 nm en bande G

Autori: C. Maye, W. Aouimeur, G. Ducournau, D. Gloria, and C. Gaquière
Pubblicato in: 21e Journées Nationales Microondes (JNM), 2019
Editore: Journées Nationales Microondes

A 30-GHz compact resonator structure based on Folded Slow-wave CoPlanar Waveguides on a 55-nm BiCMOS technology

Autori: M. Margalef-Rovira, O. Occello, A. A. Saadi, M. J. Barragán, C. Gaquière, E. Pistono, S. Bourdel, and P. Ferrari
Pubblicato in: 7th Advanced Electromagnetics Symposium -AES 2019, 2019
Editore: AES 2019

Low Frequency Noise modelling of BiCMOS SiGe HBTs

Autori: J. El Beyrouthy , A. Vauthelin , M. Seif , B. Sagnes , A. Hoffman , M. Valenza , S. Haendler, A. Gauthier , P. Chevalier, D. Gloria , and F. Pascal
Pubblicato in: 49th European Microwave Week. Presented at EuMIC/TARANTO Workshop “Recent Advances in SiGe BiCMOS: Technologies, Modelling and Circuits for 5G, Radar and Imaging, 2019
Editore: 49th European Microwave Week

Effects of X-rays Radiation on I-V and Low Frequency Noise chraracteristics in advanced Si/SiGe:C Heterojunction Bipolar Transistors

Autori: J. El Beyrouthy, A. Vauthelin, M. Seif, B. Sagnes, F. Pascal, A. Hoffman, M. Valenza, S. Haendler, A. Gauthier, P. Chevalier, and D. Gloria
Pubblicato in: Proceedings of the 2019 European Conference on Radiation and its Effects on Components and Systems (RADECS), 2019
Editore: 2019 European Conference on Radiation and its Effects on Components and Systems (RADECS)

Device Architectures for High-speed SiGe HBTs

Autori: H. Rucker, B. Heinemann
Pubblicato in: 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019, Pagina/e 1-7, ISBN 978-1-7281-0586-4
Editore: IEEE
DOI: 10.1109/bcicts45179.2019.8972757

Distortion Analysis of CE and CB SiGe HBT Power-Cells with f max beyond 220 GHz for Millimeter-Wave Applications

Autori: P. Sakalas, A. Mukherjee, M. Schroter
Pubblicato in: 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019, Pagina/e 1-4, ISBN 978-1-7281-0586-4
Editore: IEEE
DOI: 10.1109/bcicts45179.2019.8972755

Noise and Linearity of High-Speed SiGe HBT Cells in CE and CB Operation

Autori: P. Sakalas, A. Mukherjee, M. Schröter
Pubblicato in: 25th International Conference on Noise and Fluctuations - ICNF 2019, 2019
Editore: ICNF 2019

A 28 GHz Scalable Beamforming System for 5G Automotive Connectivity: an Integrated Patch Antenna and Power Amplifier Solution

Autori: Luca Aluigi, Giulia Orecchini, Luca Larcher
Pubblicato in: 2018 IEEE MTT-S International Microwave Workshop Series on 5G Hardware and System Technologies (IMWS-5G), 2018, Pagina/e 1-3, ISBN 978-1-5386-1197-5
Editore: IEEE
DOI: 10.1109/imws-5g.2018.8484325

A Tuneable Fully Single-Ended 39GHz to 28GHz Gilbert Micromixer for 5G Using Analog Predistortion in a 130nm BiCMOS Technology

Autori: Julian Potschka, Marco Dietz, Katharina Kolb, Tim Maiwald, Dieter Ferling, Amelie Hagelauer, Robert Weigel
Pubblicato in: 2020 IEEE Radio and Wireless Symposium (RWS), 2020, Pagina/e 334-336, ISBN 978-1-7281-1120-9
Editore: IEEE
DOI: 10.1109/rws45077.2020.9050135

Design Methodology for Automatically Designed, Integrated Marchand Baluns with Low Insertion Loss at Lowest Phase Imbalance

Autori: Albert-Marcel Schrotz, Tim Maiwald, Katharina Kolb, Sascha Breun, Marco Dietz, Amelie Hagelauer, Robert Weigel
Pubblicato in: 2019 IEEE Asia-Pacific Microwave Conference (APMC), 2019, Pagina/e 771-773, ISBN 978-1-7281-3517-5
Editore: IEEE
DOI: 10.1109/apmc46564.2019.9038425

A Highly Linear and Efficient 28 GHz Stacked Power Amplifier for 5G using Analog Predistortion in a 130 nm BiCMOS Process

Autori: Julian Potschka, Marco Dietz, Katharina Kolb, Tim Maiwald, Sascha Breun, Thomas Ackermann, Dieter Ferling, Amelie Hagelauer, Robert Weigel
Pubblicato in: 2019 IEEE Asia-Pacific Microwave Conference (APMC), 2019, Pagina/e 920-922, ISBN 978-1-7281-3517-5
Editore: IEEE
DOI: 10.1109/apmc46564.2019.9038828

A Technology Independent Synthesis Approach for Integrated mmWave Coupled Line Circuits

Autori: Tim Maiwald, Albert-Marcel Schrotz, Katharina Kolb, Julian Potschka, Marco Dietz, Amelie Hagelauer, Robert Weigel
Pubblicato in: 2020 IEEE Radio and Wireless Symposium (RWS), 2020, Pagina/e 259-261, ISBN 978-1-7281-1120-9
Editore: IEEE
DOI: 10.1109/rws45077.2020.9050010

Can the RF radio foster the 140 GHz spectrum?

Autori: B. Debaillie, A. Visweswaran, T. Maiwald, K. Schneider, A. Karakuzulu, D. Ferling, and K. Aufinger
Pubblicato in: 49th European Microwave Week. Presented at EuMIC/TARANTO Workshop “Recent Advances in SiGe BiCMOS: Technologies, Modelling and Circuits for 5G, Radar and Imaging, 2019
Editore: EuMW

A 28 GHz Broadband Low Noise Amplifier in a 130 nm BiCMOS Technology for 5G Applications

Autori: Katharina Kolb, Julian Potschka, Tim Maiwald, Klaus Aufinger, Marco Dietz, Robert Weigel
Pubblicato in: 2020 23rd International Microwave and Radar Conference (MIKON), 2020, Pagina/e 192-195, ISBN 978-83-949421-7-5
Editore: IEEE
DOI: 10.23919/mikon48703.2020.9253887

An integrated 132-147GHz power source with +27dBm EIRP

Autori: Akshay Visweswaran, Alexander Haag, Carmine de Martino, Karina Schneider, Tim Maiwald, Bastien Vignon, Klaus Aufinger, Marco Spirito, Thomas Zwick, Piet Wambacq
Pubblicato in: 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2020, Pagina/e 219-222, ISBN 978-1-7281-6809-8
Editore: IEEE
DOI: 10.1109/rfic49505.2020.9218353

A Highly-Efficient 120 GHz and 240 GHz Signal Source in A SiGe-Technology

Autori: Florian Vogelsang, David Starke, Jonathan Wittemeier, Holger Rucker, Nils Pohl
Pubblicato in: 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2020, Pagina/e 1-4, ISBN 978-1-7281-9749-4
Editore: IEEE
DOI: 10.1109/bcicts48439.2020.9392945

Power Measurement Setup Development for On-Wafer Characterization at 185–191 GHz

Autori: Caroline Maye, Sylvie Lepilliet, Etienne Okada, Daniel Gloria, Guillaume Ducournau, Christophe Gaquiere
Pubblicato in: 2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC), 2020, Pagina/e 1-3, ISBN 978-1-7281-2645-6
Editore: IEEE
DOI: 10.1109/inmmic46721.2020.9160204

A 240-GHz FMCW Radar Transceiver with 10 dBm Output Power using Quadrature Combining

Autori: F. Ahmed, M. Furqan, K. Aufinger, and A. Stelzer
Pubblicato in: 2021
Editore: EuMA

Impact of Gamma irradiation on advanced Si/SiGe:C BiCMOS technology: comparison versus X-ra

Autori: J. Elbeyrouthy, B. Sagnes, F. Pascal, M. Elsherif, J. Boch, T. Maraine, S. Haendler, P. Chevalier, D. Gloria
Pubblicato in: 31th European Conference on Radiation and its Effects on Components and Systems, 2020
Editore: RADECS

100 GSa/s BiCMOS Analog Multiplexer Based 100 GBd PAM Transmission over 20 km Single-Mode Fiber in the C-Band

Autori: Karsten Schuh, Qian Hu, Michael Collisi, Roman Dischler, Mathieu Chagnon, Fred Buchali, Horst Hettrich, Rolf Schmid, Michael Moller
Pubblicato in: 2020 European Conference on Optical Communications (ECOC), 2020, Pagina/e 1-4, ISBN 978-1-7281-7361-0
Editore: IEEE
DOI: 10.1109/ecoc48923.2020.9333158

128-GS/s 1-to-4 SiGe Analog Demultiplexer with 36-GHz Bandwidth for 6-bit Data Converters

Autori: Philipp Thomas, Tobias Tannert, Markus Grozing, Manfred Berroth
Pubblicato in: 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2020, Pagina/e 1-4, ISBN 978-1-7281-9749-4
Editore: IEEE
DOI: 10.1109/bcicts48439.2020.9392964

A 28 GHz Highly Accurate Phase- and Gain-Steering Transmitter Frontend for 5G Phased-Array Applications

Autori: Katharina Kolb, Julian Potschka, Tim Maiwald, Klaus Aufinger, Amelie Hagelauer, Marco Dietz, Robert Weigel
Pubblicato in: 2020 IEEE 63rd International Midwest Symposium on Circuits and Systems (MWSCAS), 2020, Pagina/e 432-435, ISBN 978-1-7281-8058-8
Editore: IEEE
DOI: 10.1109/mwscas48704.2020.9184577

Broadband Dual-Polarized Stacked Microstrip Antenna with Pin- and Edge-Feed for 5G Applications in Ka-Band

Autori: Karina Schneider, Soren Marahrens, Joerg Eisenbeis, Jerzy Kowalewski, Thomas Zwick
Pubblicato in: 2020 14th European Conference on Antennas and Propagation (EuCAP), 2020, Pagina/e 1-5, ISBN 978-88-31299-00-8
Editore: IEEE
DOI: 10.23919/eucap48036.2020.9135696

Analog 28 GHz LoS MIMO Relay System Using a 90° Hybrid Coupler

Autori: Joerg Eisenbeis, Yueheng Li, Jerzy Kowalewski, Marius Kretschmann, Thomas Zwick
Pubblicato in: IEEE Antennas and Wireless Propagation Letters, Numero 19/4, 2020, Pagina/e 571-575, ISSN 1536-1225
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/lawp.2020.2972116

128 GSa/s SiGe DAC Implementation Enabling 1.52 Tb/s Single Carrier Transmission

Autori: Fred Buchali, Vahid Aref, Roman Dischler, Mathieu Chagnon, Karsten Schuh, Horst Hettrich, Anna Bielik, Lars Altenhain, Markus Guntermann, Rolf Schmid, Michael Moller
Pubblicato in: Journal of Lightwave Technology, Numero 39/3, 2021, Pagina/e 763-770, ISSN 0733-8724
Editore: Optical Society of America
DOI: 10.1109/jlt.2020.3034535

A Broadband 110–170-GHz Stagger-Tuned Power Amplifier With 13.5-dBm P sat in 130-nm SiGe

Autori: Alper Karakuzulu, Mohamed Hussein Eissa, Dietmar Kissinger, Andrea Malignaggi
Pubblicato in: IEEE Microwave and Wireless Components Letters, Numero 31/1, 2021, Pagina/e 56-59, ISSN 1531-1309
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/lmwc.2020.3036937

3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation

Autori: Yaxin Zhang, Wenfeng Liang, Xiaodi Jin, Mario Krattenmacher, Sophia Falk, Paulius Sakalas, Bernd Heinemann, Michael Schroter
Pubblicato in: IEEE Journal of Solid-State Circuits, Numero 55/6, 2020, Pagina/e 1-11, ISSN 0018-9200
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/jssc.2019.2959510

Sparse Array Channel Estimation for Subarray-Based Hybrid Beamforming Systems

Autori: Joerg Eisenbeis, Nicolai Kern, Magnus Tingulstad, Lucas Giroto de Oliveira, Thomas Zwick
Pubblicato in: IEEE Wireless Communications Letters, Numero 10/2, 2021, Pagina/e 231-235, ISSN 2162-2337
Editore: IEEE Communications Society
DOI: 10.1109/lwc.2020.3025171

A mmW Broadband Dual-Polarized Dielectric Resonator Antenna Based on Hybrid Modes

Autori: Jerzy Kowalewski, Joerg Eisenbeis, Alisa Jauch, Jonathan Mayer, Marius Kretschmann, Thomas Zwick
Pubblicato in: IEEE Antennas and Wireless Propagation Letters, Numero 19/7, 2020, Pagina/e 1068-1072, ISSN 1536-1225
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/lawp.2020.2988516

A unified aging compact model for hot carrier degradation under mixed-mode and reverse E-B stress in complementary SiGe HBTs

Autori: C. Mukherjee, G.G. Fischer, F. Marc, M. Couret, T. Zimmer, C. Maneux
Pubblicato in: Solid-State Electronics, Numero 172, 2020, Pagina/e 107900, ISSN 0038-1101
Editore: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2020.107900

Highly Tunable High- Q Inversion-Mode MOS Varactor in the 1–325-GHz Band

Autori: Marc Margalef-Rovira, Abdelhalim A. Saadi, Loic Vincent, Sylvie Lepilliet, Christophe Gaquiere, Daniel Gloria, Cedric Durand, Manuel J. Barragan, Emmanuel Pistono, Sylvain Bourdel, Philippe Ferrari
Pubblicato in: IEEE Transactions on Electron Devices, Numero 67/6, 2020, Pagina/e 2263-2269, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2020.2989726

Design of Compact D-Band Amplifiers With Accurate Modeling of Inductors and Current Return Paths in 55-nm SiGe BiCMOS

Autori: Ibrahim Petricli, Hadi Lotfi, Andrea Mazzanti
Pubblicato in: IEEE Solid-State Circuits Letters, Numero 3, 2020, Pagina/e 250-253, ISSN 2573-9603
Editore: IEEE
DOI: 10.1109/lssc.2020.3013330

LO Chain (×12) Integrated 190-GHz Low-Power SiGe Receiver With 49-dB Conversion Gain and 171-mW DC Power Consumption

Autori: Yaxin Zhang, Wenfeng Liang, Ciro Esposito, Xiaodi Jin, Paulius Sakalas, Michael Schroter
Pubblicato in: IEEE Transactions on Microwave Theory and Techniques, Numero 69/3, 2021, Pagina/e 1943-1954, ISSN 0018-9480
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tmtt.2020.3044095

D-Band SiGe BiCMOS Power Amplifier With 16.8dBm P₁dB and 17.1% PAE Enhanced by Current-Clamping in Multiple Common-Base Stages

Autori: Ibrahim Petricli, Domenico Riccardi, Andrea Mazzanti
Pubblicato in: IEEE Microwave and Wireless Components Letters, Numero 31/3, 2021, Pagina/e 288-291, ISSN 1531-1309
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/lmwc.2021.3049458

An Efficient Thermal Model for Multifinger SiGe HBTs Under Real Operating Condition

Autori: Nidhin K, Shubham Pande, Shon Yadav, Suresh Balanethiram, Deleep R. Nair, Sebastien Fregonese, Thomas Zimmer, Anjan Chakravorty
Pubblicato in: IEEE Transactions on Electron Devices, Numero 67/11, 2020, Pagina/e 5069-5075, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2020.3021626

A Broadband Zero-IF Down-Conversion Mixer in 130 nm SiGe BiCMOS for Beyond 5G Communication Systems in D-Band

Autori: Tim Maiwald, Julian Potschka, Katharina Kolb, Marco Dietz, Amelie Hagelauer, Akshay Visweswaran, Robert Weigel
Pubblicato in: IEEE Transactions on Circuits and Systems II: Express Briefs, 2021, Pagina/e 1-1, ISSN 1549-7747
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tcsii.2021.3053344

THz Characterization and Modeling of SiGe HBTs: Review (Invited)

Autori: Sebastien Fregonese, Marina Deng, Marco Cabbia, Chandan Yadav, Magali De Matos, Thomas Zimmer
Pubblicato in: IEEE Journal of the Electron Devices Society, Numero 8, 2020, Pagina/e 1363-1372, ISSN 2168-6734
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2020.3036135

96 GHz 4.7 mW low-power frequency tripler with 0.5 V supply voltage

Autori: W. Liang, A. Mukherjee, P. Sakalas, A. Pawlak, M. Schröter
Pubblicato in: IET Electronics Letters, 2017, ISSN 0013-5194
Editore: Institute of Electrical Engineers

Hot-Carrier Degradation in SiGe HBTs: A Physical and Versatile Aging Compact Model

Autori: Chhandak Mukherjee, Thomas Jacquet, Gerhard G. Fischer, Thomas Zimmer, Cristell Maneux
Pubblicato in: IEEE Transactions on Electron Devices, Numero 64/12, 2017, Pagina/e 4861-4867, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2017.2766457

Thermal penetration depth investigations and BEOL metal impact on the thermal impedance in SiGe HBTs

Autori: R. D’Esposito, S. Balanethiram, J.L. Battaglia, S. Frégonèse, T. Zimmer
Pubblicato in: IEEE Electron Device Letters, 2017, ISSN 0741-3106
Editore: Institute of Electrical and Electronics Engineers

High-performance SiGe HBTs for next generation BiCMOS technology

Autori: Holger Rücker, Bernd Heinemann
Pubblicato in: Semiconductor Science and Technology, Numero 33/11, 2018, Pagina/e 114003, ISSN 0268-1242
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6641/aade64

Impact of nickel silicide on SiGe BiCMOS devices

Autori: Dirk Wolansky, Thomas Grabolla, Thomas Lenke, Sebastian Schulze, Peter Zaumseil
Pubblicato in: Semiconductor Science and Technology, Numero 33/12, 2018, Pagina/e 124003, ISSN 0268-1242
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6641/aae612

On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands

Autori: Sebastien Fregonese, Magali De matos, Marina Deng, Manuel Potereau, Cedric Ayela, Klaus Aufinger, Thomas Zimmer
Pubblicato in: IEEE Transactions on Microwave Theory and Techniques, Numero 66/7, 2018, Pagina/e 3332-3341, ISSN 0018-9480
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tmtt.2018.2832067

Comparison of On-Wafer TRL Calibration to ISS SOLT Calibration With Open-Short De-Embedding up to 500 GHz

Autori: Sebastien Fregonese, Marina Deng, Magali De Matos, Chandan Yadav, Simon Joly, Bernard Plano, Christian Raya, Bertrand Ardouin, Thomas Zimmer
Pubblicato in: IEEE Transactions on Terahertz Science and Technology, Numero 9/1, 2019, Pagina/e 89-97, ISSN 2156-342X
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tthz.2018.2884612

A Compact Formulation for Avalanche Multiplication in SiGe HBTs at High Injection Levels

Autori: Mathieu Jaoul, Cristell Maneux, Didier Celi, Michael Schroter, Thomas Zimmer
Pubblicato in: IEEE Transactions on Electron Devices, Numero 66/1, 2019, Pagina/e 264-270, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2018.2875494

CHANNEL ESTIMATION METHOD FOR SUBARRAY BASED HYBRID BEAMFORMING SYSTEMS EMPLOYING SPARSE ARRAYS

Autori: Joerg Eisenbeis, Tobias Mahler, Pablo Ramos Lopez, Thomas Zwick
Pubblicato in: Progress In Electromagnetics Research C, Numero 87, 2018, Pagina/e 25-38, ISSN 1937-8718
Editore: EMW Publishing
DOI: 10.2528/pierc18062506

Methods for Determining the Collector Series Resistance in SiGe HBTs—A Review and Evaluation Across Different Technologies

Autori: Andreas Pawlak, Julia Krause, Michael Schroter
Pubblicato in: IEEE Transactions on Electron Devices, Numero 65/9, 2018, Pagina/e 3588-3599, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2018.2853092

Millimeter-Wave Noise Source Development on SiGe BiCMOS 55-nm Technology for Applications up to 260 GHz

Autori: Joao Carlos Azevedo Goncalves, Haitham Ghanem, Simon Bouvot, Daniel Gloria, Sylvie Lepilliet, Guillaume Ducournau, Christophe Gaquiere, Francois Danneville
Pubblicato in: IEEE Transactions on Microwave Theory and Techniques, Numero 67/9, 2019, Pagina/e 3732-3742, ISSN 0018-9480
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tmtt.2019.2926289

Concept and Realization of an Integrated 79-GHz Sequential Sampling Pulse Radar

Autori: Alexander Leibetseder, Christoph Wagner, Andreas Stelzer
Pubblicato in: IEEE Transactions on Microwave Theory and Techniques, Numero 67/12, 2019, Pagina/e 5372-5383, ISSN 0018-9480
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tmtt.2019.2951141

Mixed-Mode Stress in Silicon–Germanium Heterostructure Bipolar Transistors: Insights From Experiments and Simulations

Autori: Francesco Maria Puglisi, Luca Larcher, Paolo Pavan
Pubblicato in: IEEE Transactions on Device and Materials Reliability, Numero 19/2, 2019, Pagina/e 275-282, ISSN 1530-4388
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tdmr.2019.2912853

Validation of Thermal Resistance Extracted From Measurements on Stripe Geometry SiGe HBTs

Autori: Suresh Balanethiram, Rosario D'Esposito, Sebastien Fregonese, Anjan Chakravorty, Thomas Zimmer
Pubblicato in: IEEE Transactions on Electron Devices, Numero 66/10, 2019, Pagina/e 4151-4155, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2019.2935012

A SiGe HBT BiCMOS 1-to-4 ADC Frontend Enabling Low Bandwidth Digitization of 100 GBaud PAM4 Data

Autori: Fred Buchali, Xuan-Quang Du, Karsten Schuh, Son Thai Le, Markus Grozing, Manfred Berroth
Pubblicato in: Journal of Lightwave Technology, Numero 38/1, 2020, Pagina/e 150-158, ISSN 0733-8724
Editore: Optical Society of America
DOI: 10.1109/jlt.2019.2951592

Low-loss broadband (DC to 220 GHz) S-CPW to S-CPS transition for S-CPS coplanar probing

Autori: A.A. Saadi, M. Margalef-Rovira, L. Vincent, S. Lepilliet, C. Gaquiere, P. Ferrari
Pubblicato in: Electronics Letters, Numero 55/21, 2019, Pagina/e 1137-1139, ISSN 0013-5194
Editore: Institute of Electrical Engineers
DOI: 10.1049/el.2019.2377

12-mW 97-GHz Low-Power Downconversion Mixer With 0.7-V Supply Voltage

Autori: Yaxin Zhang, Wenfeng Liang, Paulius Sakalas, Anindya Mukherjee, Xiaodi Jin, Julia Krause, Michael Schroter
Pubblicato in: IEEE Microwave and Wireless Components Letters, Numero 29/4, 2019, Pagina/e 279-281, ISSN 1531-1309
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/lmwc.2019.2901410

A 30.1 mW / $\mu$ m 2 SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS Node

Autori: A. Gauthier, W. Aouimeur, E. Okada, N. Guitard, P. Chevalier, C. Gaquiere
Pubblicato in: IEEE Electron Device Letters, Numero 41/1, 2020, Pagina/e 12-14, ISSN 0741-3106
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2954600

(Invited) Integration of an Epitaxial-Base-Link HBT Device with f T = 300GHz, f max 480GHz in 90nm CMOS

Autori: Dirk Manger, Josef Boeck, Klaus Aufinger, Sabine Boguth, Robert Gruenberger, Thomas Popp, Boris Binder, Claudia Hengst, Soran Majied, Matthias Markert, Andreas Pribil, Steffen Rothenhaeusser, Dmitri Alex Tschumakow, Claus Dahl, Thomas Bever
Pubblicato in: ECS Transactions, Numero 98/5, 2020, Pagina/e 101-110, ISSN 1938-6737
Editore: ECS
DOI: 10.1149/09805.0101ecst

Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part I—Model Development

Autori: Aakashdeep Gupta, K Nidhin, Suresh Balanethiram, Shon Yadav, Anjan Chakravorty, Sebastien Fregonese, Thomas Zimmer
Pubblicato in: Electronics, Numero 9/9, 2020, Pagina/e 1333, ISSN 2079-9292
Editore: MDPI
DOI: 10.3390/electronics9091333

Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs

Autori: Nicolo Zagni, Francesco Maria Puglisi, Giovanni Verzellesi, Paolo Pavan
Pubblicato in: IEEE Transactions on Electron Devices, Numero 67/11, 2020, Pagina/e 4597-4601, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2020.3018103

Single Sideband Transmission Employing a 1-to-4 ADC Frontend and Parallel Digitization

Autori: Son Thai Le, Karsten Schuh, Fred Buchali, Xuan-Quang Du, Markus Grozing, Manfred Berroth, Laurent Schmalen, Henning Buelow
Pubblicato in: Journal of Lightwave Technology, Numero 38/12, 2020, Pagina/e 3125-3134, ISSN 0733-8724
Editore: Optical Society of America
DOI: 10.1109/jlt.2020.2995539

TCAD and EM co-simulation method to verify SiGe HBT measurements up to 500 GHz

Autori: Soumya Ranjan Panda, Sebastien Fregonese, Marina Deng, Anjan Chakravorty, Thomas Zimmer
Pubblicato in: Solid-State Electronics, Numero 174, 2020, Pagina/e 107915, ISSN 0038-1101
Editore: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2020.107915

(Invited) Nickel and Nickel-Platinum Silicide for BiCMOS Devices

Autori: Dirk Wolansky, Jean-Paul Blaschke, Jürgen Drews, Thomas Grabolla, Bernd Heinemann, Thomas Lenke, Holger Rücker, Markus Andreas Schubert, Sebastian Schulze, Heinz-Peter Stoll, Marvin Zöllner, Uwe Richter, Dan Deyo
Pubblicato in: ECS Transactions, Numero 98/5, 2020, Pagina/e 351-361, ISSN 1938-6737
Editore: ECS
DOI: 10.1149/09805.0351ecst

Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part II-Experimental Validation

Autori: Aakashdeep Gupta, K Nidhin, Suresh Balanethiram, Shon Yadav, Anjan Chakravorty, Sebastien Fregonese, Thomas Zimmer
Pubblicato in: Electronics, Numero 9/9, 2020, Pagina/e 1365, ISSN 2079-9292
Editore: MDPI
DOI: 10.3390/electronics9091365

SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave System

Autori: T. Zimmer, J. Boeck, F. Buchali, P. Chevalier, M. Collisi, B. Debaillie, M. Deng, P. Ferrari, S. Fregonese, C. Gaquiere, H. Ghanem, H. Hettrich, A. Karakuzulu, T. Maiwald, M. Margalef-Rovira, C. Maye, M. Moeller, A. Mukherjee, H. Ruecker, P. Sakalas, R. Schmid, K. Schneider, K. Schuh, W. Templ, A. Visweswaran, T. Zwick
Pubblicato in: Journal of Microwaves, 2021, Pagina/e 288-298, ISSN 2692-8388
Editore: IEEE
DOI: 10.1109/jmw.2020.3031831

Millimeter-wave Circuits and Applications

Autori: A. Mukherjee, W. Liang, M. Schroter, U. Pfeiffer, R. Jain,J. Grzyb and P. Hillger
Pubblicato in: River Publishers Series in Electronic Materials and Devices, 2017
Editore: River Publishers Series in Electronic Materials and Devices

Diritti di proprietà intellettuale

Cyclic epitaxy process to form air gap isolation for a bipolar transistor

Numero candidatura/pubblicazione: US 10186605
Data: 2017-10-13
Candidato/i: STMICROELECTRONICS CROLLES 2 SAS

Heterojunction bipolar transistor and method of manufacturing the same

Numero candidatura/pubblicazione: US 10224423
Data: 2017-10-13
Candidato/i: STMICROELECTRONICS CROLLES 2 SAS