Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2

Livrables

Dissemination and Exploitation Plan (update 1)
Data Management Plan (Update)

Data Management Plan update at mid-term in light of project results

planning and execution of exploitation activities, including the use of the results during and after the project’s implementation

Teaching module prepared utilising project results for use in regular graduate courses

implementation of the project results into relevant PhD or other graduate courses and summer schools. Specific modules on (i) growth/characterization of FE films; (ii) FE capacity fabrication and elaboration; (iii) architecture simulation for LiM application . Integratation of project results in lectures for students of engineering courses and PhD students (doctoral and summer schools) on the national and international level and creation of Massive Open Online courses (MOOC) in order to increase the dissemination of the education activities.

Benchmark of FeRAM with other eNVM technologies

Benchmark of FeRAM with respect to other emerging non-volatile technologies such as ReRAM, CBRAM, PCRAM and STT-MRAM, will be done . The FeRAM 1T-1C will thus be compared with the competing technologies integrated within the same technology node, and similar MAD (Memory Advanced Demonstrator) test vehicles from CEA, in terms of energy efficiency, speed, endurance, data retention

Long-term impact roadmap

Final public assessment of future impact of project work

Dissemination and Exploitation Plan (final update)

Update of Dissemination and Exploitation Plan for future use of project results

Dissemination and Exploitation Plan

Dissemination and Exploitation Plan to protect IP following mid-term assessment

Project Website and visual identity

design of logo and friendly public website

Publications

Transient Negative Capacitance of Silicon-doped HfO 2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs

Auteurs: C. Gastaldi, A. Saeidi, M. Cavalieri, I. Stolichnov, P. Muralt, A. M. Ionescu
Publié dans: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, Page(s) 23.5.1-23.5.4, ISBN 978-1-7281-4032-2
Éditeur: IEDM 2019
DOI: 10.1109/iedm19573.2019.8993523

Prospects for energy-efficient edge computing with integrated HfO<inf>2</inf>-based ferroelectric devices

Auteurs: Ian OrConnor, Mayeul Cantan, Cedric Marchand, Bertrand Vilquin, Stefan Slesazeck, Evelyn T. Breyer, Halid Mulaosmanovic, Thomas Mikolajick, Bastien Giraud, Jean-Philippe Noel, Adrian Ionescu, Igor Stolichnov
Publié dans: 2018 IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC), 2018, Page(s) 180-183, ISBN 978-1-5386-4756-1
Éditeur: IEEE
DOI: 10.1109/VLSI-SoC.2018.8644809

Characterization of ferroelectric hafnium/zirconium oxide solid solutions deposited by reactive magnetron sputtering

Auteurs: Jordan Bouaziz, Pedro Rojo Romeo, Nicolas Baboux, Bertrand Vilquin
Publié dans: Journal of Vacuum Science & Technology B, Numéro 37/2, 2019, Page(s) 021203, ISSN 2166-2754
Éditeur: AVS Science and Technology Society
DOI: 10.1116/1.5060643

Emerging Technologies: Challenges and Opportunities for Logic Synthesis

Auteurs: Alberto Bosio, Mayeul Cantan, Cedric Marchand, Ian O'Connor, Petr Fiser, Arnaud Poittevin, Marcello Traiola
Publié dans: 2021 24th International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS), 2021, Page(s) 93-98, ISBN 978-1-6654-3595-6
Éditeur: IEEE
DOI: 10.1109/ddecs52668.2021.9417062

Adoption of 2T2C ferroelectric memory cells for logic operation

Auteurs: Taras Ravsher, Halid Mulaosmanovic, Evelyn T. Breyer, Viktor Havel, Thomas Mikolajick, Stefan Slesazeck
Publié dans: 2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2019, Page(s) 791-794, ISBN 978-1-7281-0996-1
Éditeur: ICECS 2019
DOI: 10.1109/icecs46596.2019.8965155

Demonstration of BEOL-compatible ferroelectric Hf 0.5 Zr 0.5 O 2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications

Auteurs: T. Francois, C. Pellissier, S. Slesazeck, V. Havel, C. Richter, A. Makosiej, B. Giraud, E. T. Breyer, M. Materano, P. Chiquet, M. Bocquet, L. Grenouillet, E. Nowak, U. Schroeder, F. Gaillard, J. Coignus, P. Blaise, C. Carabasse, N. Vaxelaire, T. Magis, F. Aussenac, V. Loup
Publié dans: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, Page(s) 15.7.1-15.7.4, ISBN 978-1-7281-4032-2
Éditeur: IEDM 2019
DOI: 10.1109/IEDM19573.2019.8993485

Chemical Stability of IrO 2 Top Electrodes in Ferroelectric Hf 0.5 Zr 0.5 O 2 ‐Based Metal–Insulator–Metal Structures: The Impact of Annealing Gas

Auteurs: Thomas Szyjka, Lutz Baumgarten, Terence Mittmann, Yury Matveyev, Christoph Schlueter, Thomas Mikolajick, Uwe Schroeder, Martina Müller
Publié dans: physica status solidi (RRL) – Rapid Research Letters, Numéro 15/5, 2021, Page(s) 2100027, ISSN 1862-6254
Éditeur: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.202100027

Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO 2 films

Auteurs: Lutz Baumgarten, Thomas Szyjka, Terence Mittmann, Monica Materano, Yury Matveyev, Christoph Schlueter, Thomas Mikolajick, Uwe Schroeder, Martina Müller
Publié dans: Applied Physics Letters, Numéro 118/3, 2021, Page(s) 032903, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/5.0035686

Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf 0.5 Zr 0.5 O 2 Films

Auteurs: Terence Mittmann, Thomas Szyjka, Hsain Alex, Marian Cosmin Istrate, Patrick D. Lomenzo, Lutz Baumgarten, Martina Müller, Jacob L. Jones, Lucian Pintilie, Thomas Mikolajick, Uwe Schroeder
Publié dans: physica status solidi (RRL) – Rapid Research Letters, Numéro 15/5, 2021, Page(s) 2100012, ISSN 1862-6254
Éditeur: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.202100012

Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf 0.5 Zr 0.5 O 2 Capacitors

Auteurs: Furqan Mehmood, Michael Hoffmann, Patrick D. Lomenzo, Claudia Richter, Monica Materano, Thomas Mikolajick, Uwe Schroeder
Publié dans: Advanced Materials Interfaces, Numéro 6/21, 2019, Page(s) 1901180, ISSN 2196-7350
Éditeur: Wiley online
DOI: 10.1002/admi.201901180

Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf 0.5 Zr 0.5 O 2 Thin Films

Auteurs: Furqan Mehmood, Thomas Mikolajick, Uwe Schroeder
Publié dans: physica status solidi (a), Numéro 217/22, 2020, Page(s) 2000281, ISSN 1862-6300
Éditeur: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.202000281

Surface relaxation and rumpling of Sn-doped β − Ga 2 O 3 ( 010 )

Auteurs: A. Pancotti, T. C. Back, W. Hamouda, M. Lachheb, C. Lubin, P. Soukiassian, J. Boeckl, D. Dorsey, S. Mou, T. Asel, G. Geneste, N. Barrett
Publié dans: Physical Review B, Numéro 102/24, 2020, ISSN 2469-9950
Éditeur: APS Physics
DOI: 10.1103/physrevb.102.245306

Interface chemistry of pristine TiN/La: Hf 0.5 Zr 0.5 O 2 capacitors

Auteurs: W. Hamouda, C. Lubin, S. Ueda, Y. Yamashita, O. Renault, F. Mehmood, T. Mikolajick, U. Schroeder, R. Negrea, N. Barrett
Publié dans: Applied Physics Letters, Numéro 116/25, 2020, Page(s) 252903, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/5.0012595

Lanthanum doping induced structural changes and their implications on ferroelectric properties of Hf 1−x Zr x O 2 thin film

Auteurs: Furqan Mehmood, Thomas Mikolajick, Uwe Schroeder
Publié dans: Applied Physics Letters, Numéro 117/9, 2020, Page(s) 092902, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/5.0021007

Dramatic impact of pressure and annealing temperature on the properties of sputtered ferroelectric HZO layers

Auteurs: Jordan Bouaziz, Pedro Rojo Romeo, Nicolas Baboux, Raluca Negrea, Lucian Pintilie, Bertrand Vilquin
Publié dans: APL Materials, Numéro 7/8, 2019, Page(s) 081109, ISSN 2166-532X
Éditeur: APL Materials
DOI: 10.1063/1.5110894

Reliability aspects of ferroelectric TiN/Hf 0.5 Zr 0.5 O 2 /Ge capacitors grown by plasma assisted atomic oxygen deposition

Auteurs: C. Zacharaki, P. Tsipas, S. Chaitoglou, L. Bégon-Lours, M. Halter, A. Dimoulas
Publié dans: Applied Physics Letters, Numéro 117/21, 2020, Page(s) 212905, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/5.0029657

Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf 0.5 Zr 0.5 O 2 and Si:HfO 2 -based MFM capacitors

Auteurs: T. Francois, L. Grenouillet, J. Coignus, N. Vaxelaire, C. Carabasse, F. Aussenac, S. Chevalliez, S. Slesazeck, C. Richter, P. Chiquet, M. Bocquet, U. Schroeder, T. Mikolajick, F. Gaillard, E. Nowak
Publié dans: Applied Physics Letters, Numéro 118/6, 2021, Page(s) 062904, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/5.0035650

Perspective on ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing

Auteurs: Evelyn T. Breyer, Halid Mulaosmanovic, Thomas Mikolajick, Stefan Slesazeck
Publié dans: Applied Physics Letters, Numéro 118/5, 2021, Page(s) 050501, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/5.0035281

Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films

Auteurs: Jordan Bouaziz, Pedro Rojo Romeo, Nicolas Baboux, Bertrand Vilquin
Publié dans: ACS Applied Electronic Materials, Numéro 1/9, 2019, Page(s) 1740-1745, ISSN 2637-6113
Éditeur: ACS Appl. Electron. Mater.1
DOI: 10.1021/acsaelm.9b00367

Very large remanent polarization in ferroelectric Hf 1-x Zr x O 2 grown on Ge substrates by plasma assisted atomic oxygen deposition

Auteurs: C. Zacharaki, P. Tsipas, S. Chaitoglou, S. Fragkos, M. Axiotis, A. Lagoyiannis, R. Negrea, L. Pintilie, A. Dimoulas
Publié dans: Applied Physics Letters, Numéro 114/11, 2019, Page(s) 112901, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/1.5090036

Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

Auteurs: Terence Mittmann, Monica Materano, Patrick D. Lomenzo, Min Hyuk Park, Igor Stolichnov, Matteo Cavalieri, Chuanzhen Zhou, Ching‐Chang Chung, Jacob L. Jones, Thomas Szyjka, Martina Müller, Alfred Kersch, Thomas Mikolajick, Uwe Schroeder
Publié dans: Advanced Materials Interfaces, 2019, Page(s) 1900042, ISSN 2196-7350
Éditeur: Wiley Online Library
DOI: 10.1002/admi.201900042

Depletion induced depolarization field in Hf 1−x Zr x O 2 metal-ferroelectric-semiconductor capacitors on germanium

Auteurs: C. Zacharaki, P. Tsipas, S. Chaitoglou, E. K. Evangelou, C. M. Istrate, L. Pintilie, A. Dimoulas
Publié dans: Applied Physics Letters, Numéro 116/18, 2020, Page(s) 182904, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/5.0007111

Imprint issue during retention tests for HfO 2 -based FRAM: An industrial challenge?

Auteurs: J. Bouaziz, P. Rojo Romeo, N. Baboux, B. Vilquin
Publié dans: Applied Physics Letters, Numéro 118/8, 2021, Page(s) 082901, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/5.0035687

The Role of Interface Defect States in n‐ and p‐Type Ge Metal–Ferroelectric–Semiconductor Structures with Hf 0.5 Zr 0.5 O 2 Ferroelectric

Auteurs: Georgia Andra Boni, Cosmin M. Istrate, Christina Zacharaki, Polychronis Tsipas, Stefanos Chaitoglou, Evangelos K. Evangelou, Athanasios Dimoulas, Ioana Pintilie, Lucian Pintilie
Publié dans: physica status solidi (a), Numéro 218/4, 2021, Page(s) 2000500, ISSN 1862-6300
Éditeur: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.202000500

Physical chemistry of the TiN/Hf 0.5 Zr 0.5 O 2 interface

Auteurs: W. Hamouda, A. Pancotti, C. Lubin, L. Tortech, C. Richter, T. Mikolajick, U. Schroeder, N. Barrett
Publié dans: Journal of Applied Physics, Numéro 127/6, 2020, Page(s) 064105, ISSN 0021-8979
Éditeur: American Institute of Physics
DOI: 10.1063/1.5128502

Intrinsic switching in Si-doped HfO 2 : A study of Curie–Weiss law and its implications for negative capacitance field-effect transistor

Auteurs: Carlotta Gastaldi, Matteo Cavalieri, Ali Saeidi, Eamon O'Connor, Sadegh Kamaei, Teodor Rosca, Igor Stolichnov, Adrian Mihai Ionescu
Publié dans: Applied Physics Letters, Numéro 118/19, 2021, Page(s) 192904, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/5.0052129

Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf 1−x Zr x O 2 -based structures

Auteurs: I. Stolichnov, M. Cavalieri, C. Gastaldi, M. Hoffmann, U. Schroeder, T. Mikolajick, A. M. Ionescu
Publié dans: Applied Physics Letters, Numéro 117/17, 2020, Page(s) 172902, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/5.0021272

Livrables

Publications

Partager cette page

Télécharger