Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2

Informazioni relative al progetto

3eFERRO

ID dell’accordo di sovvenzione: 780302

DOI 10.3030/780302

Progetto chiuso

Data della firma CE 31 Ottobre 2017

Data di avvio 1 Gennaio 2018

Data di completamento 30 Giugno 2021

Finanziato da

• INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)

Costo totale € 3 989 571,41

Contributo UE € 3 989 570,20

Coordinato da

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
France

Risultati finali

Documents, reports (8)

Dissemination and Exploitation Plan (update 1)
Data Management Plan (Update)

Data Management Plan update at mid-term in light of project results

Data Management Plan

planning and execution of exploitation activities, including the use of the results during and after the project’s implementation

Teaching module prepared utilising project results for use in regular graduate courses

implementation of the project results into relevant PhD or other graduate courses and summer schools. Specific modules on (i) growth/characterization of FE films; (ii) FE capacity fabrication and elaboration; (iii) architecture simulation for LiM application . Integratation of project results in lectures for students of engineering courses and PhD students (doctoral and summer schools) on the national and international level and creation of Massive Open Online courses (MOOC) in order to increase the dissemination of the education activities.

Benchmark of FeRAM with other eNVM technologies

Benchmark of FeRAM with respect to other emerging non-volatile technologies such as ReRAM, CBRAM, PCRAM and STT-MRAM, will be done . The FeRAM 1T-1C will thus be compared with the competing technologies integrated within the same technology node, and similar MAD (Memory Advanced Demonstrator) test vehicles from CEA, in terms of energy efficiency, speed, endurance, data retention

Long-term impact roadmap

Final public assessment of future impact of project work

Dissemination and Exploitation Plan (final update)

Update of Dissemination and Exploitation Plan for future use of project results

Dissemination and Exploitation Plan

Dissemination and Exploitation Plan to protect IP following mid-term assessment

Websites, patent fillings, videos etc. (1)

Project Website and visual identity

design of logo and friendly public website

Pubblicazioni

Conference proceedings (6)

Transient Negative Capacitance of Silicon-doped HfO 2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs

Autori: C. Gastaldi, A. Saeidi, M. Cavalieri, I. Stolichnov, P. Muralt, A. M. Ionescu
Pubblicato in: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, Pagina/e 23.5.1-23.5.4, ISBN 978-1-7281-4032-2
Editore: IEDM 2019
DOI: 10.1109/iedm19573.2019.8993523

Prospects for energy-efficient edge computing with integrated HfO<inf>2</inf>-based ferroelectric devices

Autori: Ian OrConnor, Mayeul Cantan, Cedric Marchand, Bertrand Vilquin, Stefan Slesazeck, Evelyn T. Breyer, Halid Mulaosmanovic, Thomas Mikolajick, Bastien Giraud, Jean-Philippe Noel, Adrian Ionescu, Igor Stolichnov
Pubblicato in: 2018 IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC), 2018, Pagina/e 180-183, ISBN 978-1-5386-4756-1
Editore: IEEE
DOI: 10.1109/VLSI-SoC.2018.8644809

Characterization of ferroelectric hafnium/zirconium oxide solid solutions deposited by reactive magnetron sputtering

Autori: Jordan Bouaziz, Pedro Rojo Romeo, Nicolas Baboux, Bertrand Vilquin
Pubblicato in: Journal of Vacuum Science & Technology B, Numero 37/2, 2019, Pagina/e 021203, ISSN 2166-2754
Editore: AVS Science and Technology Society
DOI: 10.1116/1.5060643

Emerging Technologies: Challenges and Opportunities for Logic Synthesis

Autori: Alberto Bosio, Mayeul Cantan, Cedric Marchand, Ian O'Connor, Petr Fiser, Arnaud Poittevin, Marcello Traiola
Pubblicato in: 2021 24th International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS), 2021, Pagina/e 93-98, ISBN 978-1-6654-3595-6
Editore: IEEE
DOI: 10.1109/ddecs52668.2021.9417062

Adoption of 2T2C ferroelectric memory cells for logic operation

Autori: Taras Ravsher, Halid Mulaosmanovic, Evelyn T. Breyer, Viktor Havel, Thomas Mikolajick, Stefan Slesazeck
Pubblicato in: 2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2019, Pagina/e 791-794, ISBN 978-1-7281-0996-1
Editore: ICECS 2019
DOI: 10.1109/icecs46596.2019.8965155

Demonstration of BEOL-compatible ferroelectric Hf 0.5 Zr 0.5 O 2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications

Autori: T. Francois, C. Pellissier, S. Slesazeck, V. Havel, C. Richter, A. Makosiej, B. Giraud, E. T. Breyer, M. Materano, P. Chiquet, M. Bocquet, L. Grenouillet, E. Nowak, U. Schroeder, F. Gaillard, J. Coignus, P. Blaise, C. Carabasse, N. Vaxelaire, T. Magis, F. Aussenac, V. Loup
Pubblicato in: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, Pagina/e 15.7.1-15.7.4, ISBN 978-1-7281-4032-2
Editore: IEDM 2019
DOI: 10.1109/IEDM19573.2019.8993485

Peer reviewed articles (21)

Chemical Stability of IrO 2 Top Electrodes in Ferroelectric Hf 0.5 Zr 0.5 O 2 ‐Based Metal–Insulator–Metal Structures: The Impact of Annealing Gas

Autori: Thomas Szyjka, Lutz Baumgarten, Terence Mittmann, Yury Matveyev, Christoph Schlueter, Thomas Mikolajick, Uwe Schroeder, Martina Müller
Pubblicato in: physica status solidi (RRL) – Rapid Research Letters, Numero 15/5, 2021, Pagina/e 2100027, ISSN 1862-6254
Editore: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.202100027

Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO 2 films

Autori: Lutz Baumgarten, Thomas Szyjka, Terence Mittmann, Monica Materano, Yury Matveyev, Christoph Schlueter, Thomas Mikolajick, Uwe Schroeder, Martina Müller
Pubblicato in: Applied Physics Letters, Numero 118/3, 2021, Pagina/e 032903, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0035686

Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf 0.5 Zr 0.5 O 2 Films

Autori: Terence Mittmann, Thomas Szyjka, Hsain Alex, Marian Cosmin Istrate, Patrick D. Lomenzo, Lutz Baumgarten, Martina Müller, Jacob L. Jones, Lucian Pintilie, Thomas Mikolajick, Uwe Schroeder
Pubblicato in: physica status solidi (RRL) – Rapid Research Letters, Numero 15/5, 2021, Pagina/e 2100012, ISSN 1862-6254
Editore: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.202100012

Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf 0.5 Zr 0.5 O 2 Capacitors

Autori: Furqan Mehmood, Michael Hoffmann, Patrick D. Lomenzo, Claudia Richter, Monica Materano, Thomas Mikolajick, Uwe Schroeder
Pubblicato in: Advanced Materials Interfaces, Numero 6/21, 2019, Pagina/e 1901180, ISSN 2196-7350
Editore: Wiley online
DOI: 10.1002/admi.201901180

Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf 0.5 Zr 0.5 O 2 Thin Films

Autori: Furqan Mehmood, Thomas Mikolajick, Uwe Schroeder
Pubblicato in: physica status solidi (a), Numero 217/22, 2020, Pagina/e 2000281, ISSN 1862-6300
Editore: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.202000281

Surface relaxation and rumpling of Sn-doped β − Ga 2 O 3 ( 010 )

Autori: A. Pancotti, T. C. Back, W. Hamouda, M. Lachheb, C. Lubin, P. Soukiassian, J. Boeckl, D. Dorsey, S. Mou, T. Asel, G. Geneste, N. Barrett
Pubblicato in: Physical Review B, Numero 102/24, 2020, ISSN 2469-9950
Editore: APS Physics
DOI: 10.1103/physrevb.102.245306

Interface chemistry of pristine TiN/La: Hf 0.5 Zr 0.5 O 2 capacitors

Autori: W. Hamouda, C. Lubin, S. Ueda, Y. Yamashita, O. Renault, F. Mehmood, T. Mikolajick, U. Schroeder, R. Negrea, N. Barrett
Pubblicato in: Applied Physics Letters, Numero 116/25, 2020, Pagina/e 252903, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0012595

Lanthanum doping induced structural changes and their implications on ferroelectric properties of Hf 1−x Zr x O 2 thin film

Autori: Furqan Mehmood, Thomas Mikolajick, Uwe Schroeder
Pubblicato in: Applied Physics Letters, Numero 117/9, 2020, Pagina/e 092902, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0021007

Dramatic impact of pressure and annealing temperature on the properties of sputtered ferroelectric HZO layers

Autori: Jordan Bouaziz, Pedro Rojo Romeo, Nicolas Baboux, Raluca Negrea, Lucian Pintilie, Bertrand Vilquin
Pubblicato in: APL Materials, Numero 7/8, 2019, Pagina/e 081109, ISSN 2166-532X
Editore: APL Materials
DOI: 10.1063/1.5110894

Reliability aspects of ferroelectric TiN/Hf 0.5 Zr 0.5 O 2 /Ge capacitors grown by plasma assisted atomic oxygen deposition

Autori: C. Zacharaki, P. Tsipas, S. Chaitoglou, L. Bégon-Lours, M. Halter, A. Dimoulas
Pubblicato in: Applied Physics Letters, Numero 117/21, 2020, Pagina/e 212905, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0029657

Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf 0.5 Zr 0.5 O 2 and Si:HfO 2 -based MFM capacitors

Autori: T. Francois, L. Grenouillet, J. Coignus, N. Vaxelaire, C. Carabasse, F. Aussenac, S. Chevalliez, S. Slesazeck, C. Richter, P. Chiquet, M. Bocquet, U. Schroeder, T. Mikolajick, F. Gaillard, E. Nowak
Pubblicato in: Applied Physics Letters, Numero 118/6, 2021, Pagina/e 062904, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0035650

Perspective on ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing

Autori: Evelyn T. Breyer, Halid Mulaosmanovic, Thomas Mikolajick, Stefan Slesazeck
Pubblicato in: Applied Physics Letters, Numero 118/5, 2021, Pagina/e 050501, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0035281

Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films

Autori: Jordan Bouaziz, Pedro Rojo Romeo, Nicolas Baboux, Bertrand Vilquin
Pubblicato in: ACS Applied Electronic Materials, Numero 1/9, 2019, Pagina/e 1740-1745, ISSN 2637-6113
Editore: ACS Appl. Electron. Mater.1
DOI: 10.1021/acsaelm.9b00367

Very large remanent polarization in ferroelectric Hf 1-x Zr x O 2 grown on Ge substrates by plasma assisted atomic oxygen deposition

Autori: C. Zacharaki, P. Tsipas, S. Chaitoglou, S. Fragkos, M. Axiotis, A. Lagoyiannis, R. Negrea, L. Pintilie, A. Dimoulas
Pubblicato in: Applied Physics Letters, Numero 114/11, 2019, Pagina/e 112901, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/1.5090036

Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

Autori: Terence Mittmann, Monica Materano, Patrick D. Lomenzo, Min Hyuk Park, Igor Stolichnov, Matteo Cavalieri, Chuanzhen Zhou, Ching‐Chang Chung, Jacob L. Jones, Thomas Szyjka, Martina Müller, Alfred Kersch, Thomas Mikolajick, Uwe Schroeder
Pubblicato in: Advanced Materials Interfaces, 2019, Pagina/e 1900042, ISSN 2196-7350
Editore: Wiley Online Library
DOI: 10.1002/admi.201900042

Depletion induced depolarization field in Hf 1−x Zr x O 2 metal-ferroelectric-semiconductor capacitors on germanium

Autori: C. Zacharaki, P. Tsipas, S. Chaitoglou, E. K. Evangelou, C. M. Istrate, L. Pintilie, A. Dimoulas
Pubblicato in: Applied Physics Letters, Numero 116/18, 2020, Pagina/e 182904, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0007111

Imprint issue during retention tests for HfO 2 -based FRAM: An industrial challenge?

Autori: J. Bouaziz, P. Rojo Romeo, N. Baboux, B. Vilquin
Pubblicato in: Applied Physics Letters, Numero 118/8, 2021, Pagina/e 082901, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0035687

The Role of Interface Defect States in n‐ and p‐Type Ge Metal–Ferroelectric–Semiconductor Structures with Hf 0.5 Zr 0.5 O 2 Ferroelectric

Autori: Georgia Andra Boni, Cosmin M. Istrate, Christina Zacharaki, Polychronis Tsipas, Stefanos Chaitoglou, Evangelos K. Evangelou, Athanasios Dimoulas, Ioana Pintilie, Lucian Pintilie
Pubblicato in: physica status solidi (a), Numero 218/4, 2021, Pagina/e 2000500, ISSN 1862-6300
Editore: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.202000500

Physical chemistry of the TiN/Hf 0.5 Zr 0.5 O 2 interface

Autori: W. Hamouda, A. Pancotti, C. Lubin, L. Tortech, C. Richter, T. Mikolajick, U. Schroeder, N. Barrett
Pubblicato in: Journal of Applied Physics, Numero 127/6, 2020, Pagina/e 064105, ISSN 0021-8979
Editore: American Institute of Physics
DOI: 10.1063/1.5128502

Intrinsic switching in Si-doped HfO 2 : A study of Curie–Weiss law and its implications for negative capacitance field-effect transistor

Autori: Carlotta Gastaldi, Matteo Cavalieri, Ali Saeidi, Eamon O'Connor, Sadegh Kamaei, Teodor Rosca, Igor Stolichnov, Adrian Mihai Ionescu
Pubblicato in: Applied Physics Letters, Numero 118/19, 2021, Pagina/e 192904, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0052129

Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf 1−x Zr x O 2 -based structures

Autori: I. Stolichnov, M. Cavalieri, C. Gastaldi, M. Hoffmann, U. Schroeder, T. Mikolajick, A. M. Ionescu
Pubblicato in: Applied Physics Letters, Numero 117/17, 2020, Pagina/e 172902, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0021272