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Wafer-scale, CMOS integration of photonics, plasmonics and electronics devices for mass manufacturing 200Gb/s non-return-to-zero (NRZ) transceivers towards low-cost Terabit connectivity in Data Centers

Objective

The goal of the PlaCMOS project is to develop and demonstrate the next generation optical-electronic CMOS platform that will enable transceivers capable of real-time communication with data rates exceeding 200 Gb/s. To achieve this goal the PlaCMOS platform will be based on the latest bipolar CMOS (BiCMOS) technology and will be cointegrated with a ferroelectric plasmonic and SiGe detector technology. By exploiting plasmonics rather than photonics PlaCMOS will not only be able to extend the bandwidth far beyond 100 GHz but also reduce the footprint of the photonics device to the micrometer scale. To demonstrate the technology, a single channel 200 Gb/s non-return-to-zero (NRZ) transmitter and receiver pair will be implemented. To further show the scalability an ultra-compact 4 x 50 Gb/s transceiver directly interfacing a multicore optical fiber will be implemented and tested for temperature stability beyond 150 degree Celsius. And while the project goes far beyond the current state-of-the art, the approach is not speculative but is substantiated by recent experiments performed by the members of the consortium that indicate that both electronic and photonic limits can be stretched beyond the current limits. To this end a team with complementary skill sets from both industry and universities – all with outstanding track records in the field – have committed to address the needs outlined in current roadmaps for data communication. This project will demonstrate the capabilities of the technology for a single exemplary field of applications. Yet, the project has far wider implications with applications that go beyond the field of communications.

Field of science

  • /natural sciences/physical sciences/optics/fibre optics

Call for proposal

H2020-ICT-2017-1
See other projects for this call

Funding Scheme

RIA - Research and Innovation action

Coordinator

MELLANOX TECHNOLOGIES LTD - MLNX
Address
Yokneam Ilit Industrial Zone - Hermon Building
20692 Yokneam
Israel
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
EU contribution
€ 481 250

Participants (6)

MICRAM MICROELECTRONIC GMBH
Germany
EU contribution
€ 751 721,25
Address
Konrad Zuse Strasse 16
44801 Bochum
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
EIDGENOESSISCHE TECHNISCHE HOCHSCHULE ZUERICH
Switzerland
EU contribution
€ 582 000
Address
Raemistrasse 101
8092 Zuerich
Activity type
Higher or Secondary Education Establishments
IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK
Germany
EU contribution
€ 723 560
Address
Im Technologiepark 25
15236 Frankfurt Oder
Activity type
Other
ARISTOTELIO PANEPISTIMIO THESSALONIKIS
Greece
EU contribution
€ 512 000
Address
Kedea Building, Tritis Septemvriou, Aristotle Univ Campus
54636 Thessaloniki
Activity type
Higher or Secondary Education Establishments
IBM RESEARCH GMBH
Switzerland
EU contribution
€ 611 471,25
Address
Saeumerstrasse 4
8803 Rueschlikon
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
UNIVERSITAT DES SAARLANDES
Germany
EU contribution
€ 374 375
Address
Campus
66123 Saarbrucken
Activity type
Higher or Secondary Education Establishments